Finite Element Modeling of Infrasound resonance in underground tunnel structures
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Downey, Nathan John↗
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Spin-filter tunneling detection of antiferromagnetic resonance with electrically tunable damping
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. In this work, we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in platinum ditelluride (PtTe 2 )/bilayer chromium sulfide bromide (CrSBr)/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe 2 electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high-frequency dynamics.
Cham, Thow Min Jerald [Cornell University, Ithaca,↗
Simulations of resonant intraband and interband tunneling spin filters
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resonant intraband interband tunneling spin filter↗
Spin-dependent resonant intraband and interband tunneling
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spin dependent resonant intraband interband tunnel↗
Resonance prediction for slotted wind tunnel by the finite element method
A finite element approach is developed for predicting the so-called 'resonant' frequencies of subsonic wind tunnels with variously shaped cross sections. The resulting computer code has been applied to various wind tunnels. For example, the resonant frequencies for both the NASA Ames Research Center 6 x 6 ft wind tunnel (rectangular cross section) and the NASA Langley Research Center 16 x 16 ft Transonic Dynamics Tunnel (octagonal cross section) have been calculated. The results are believed to be more accurate than theoretical values used in the past for an equivalent rectangular cross section. The effect of a plenum chamber on the resonance is examined in detail. Application of the finite element approach to the plenum chamber, as it interacts with the test section, gives more accurate results than what would be obtained by assuming an open tunnel.
Lee, I.↗
Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices
The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.
Forrest, Kathrine↗
Unraveling spin entanglement using quantum gates with scanning tunneling microscopy-driven electron spin resonance
Quantum entanglement is a fundamental resource for quantum information processing, and its controlled generation and detection remain key challenges in scalable quantum architectures. Here, we numerically demonstrate the deterministic generation of entangled spin states in a solid-state platform by implementing quantum gates via electron spin resonance combined with scanning tunneling microscopy (ESR-STM). Using two titanium atoms on a MgO/Ag(100) substrate as a model, we construct a two-qubit system whose dynamics are coherently manipulated through tailored microwave pulse sequences. We generate Bell states by implementing a Hadamard gate followed by a controlled-NOT gate, and evaluate its fidelity and concurrence using the quantum-master equation-based code TimeESR. Our results demonstrate that ESR-STM can create entangled states with significant fidelity. This study paves the way for the realization of atom-based quantum circuits and highlights ESR-STM as a powerful tool for probing and engineering entangled states on surfaces.
Switzer, Eric D. [Donostia International Physics C↗
A theory for predicting boundary impedance and resonance frequencies of slotted-wall wind tunnels, including plenum effects
Wave-induced resonance associated with the geometry of wind-tunnel test sections can occur. A theory that uses acoustic impedance concepts to predict resonance modes in a two dimensional, slotted wall wind tunnel with a plenum chamber is described. The equation derived is consistent with known results for limiting conditions. The computed resonance modes compare well with appropriate experimental data. When the theory is applied to perforated wall test sections, it predicts the experimentally observed closely spaced modes that occur when the wavelength is not long compared with he plenum depth.
Barger, R. L.↗
Electron Tunneling and X-Ray Photoelectron Spectroscopy Studies of the Superconducting Properties of Nitrogen-Doped Niobium Resonator Cavities
Scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS) have been used to investigate the differences between the surface electronic structures and chemical structure of typically prepared and N-doped Nb cutouts from superconducting radio frequency (SRF) cavities. The goal of this work is to get insights into the fundamental physics and materials mechanisms behind the striking decrease of the surface resistance with the radiofrequency magnetic field, which has been observed by many groups on N-doped Nb cavities. In particular, we address the effects of N-doping on the superconducting properties at the surface of SRF cavities. XPS measurements reveal a significantly more oxidized Nb 3d states on the N-doped Nb surfaces which is confirmed by tunneling spectroscopy measurements. Analysis of the tunneling spectra in the framework of a recent model (A. Gurevich and T. Kubo Phys. Rev. B 96, 184515 (2017)) shows that the N-doping greatly reduces local distribution of superconducting properties on the surface, causes a significant shrinkage of the metallic suboxide and changes the contact resistance between the metallic suboxide and the bulk niobium toward an optimum value, resulting in a lower surface resistance. Combination of these factors enables one to effectively tune the density of states at the surface and to reveal the decrease of the surface resistance with the radio frequency field which follows from the BCS theory. A slightly reduced average gap and a smaller coherence length, revealed by tunneling spectroscopy in the vortex cores, have been found in the N-doped Nb samples compared to typically prepared Nb samples, indicating a stronger impurity scattering caused by nitrogen doping in a moderately disordered material.
Lechner, Eric M.↗
Electron-Spin Filters Based on the Rashba Effect
Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.
Ting, David Z.-Y.↗
Electrically controlled spin device concepts
We discuss spin device concepts that exploit spin-orbit coupling in nonmagnetic semiconductor heterostructures, including the resonant interband tunneling spin filter, the bi-directional spin pump,, the bulk inversion asymmetry enhanced spin filter, and resonant spin lifetime devices.
Chang, Y.-C.↗
Quantum sensing effect of electron tunneling in DQD/analyte complex
We investigate electron tunneling between quantum dots and molecules to propose a quantum sensor. This sensor consists of double quantum dots (DQD) with energy levels specifically tailored to mirror those of the target analyte. By analyzing the spectral distribution of electron localizations in the DQD system, we can delineate the analyte’s spectrum and deduce its composition by comparing it with a reference sample. To understand electron tunneling dynamics within the DQD/analyte complex, we performed three-dimensional computational modeling applying the effective potential approach to the InAs/GaAs heterostructure. In this modeling, we mimicked the analyte spectrum by utilizing a quantum well characterized by a quasi-discrete spectrum. Our calculations reveal the inherent potential of utilizing this method as a highly sensitive and selective sensor.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape
In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.
42 ENGINEERING↗
Multiobjective optimization of nuclear microreactor reactivity control system operation with swarm and evolutionary algorithms
To improve the marketability of novel microreactor designs, there is a need for automated and optimal control of these reactors. This paper presents a methodology for performing multiobjective optimization of control drum operation for a microreactor under normal and off-nominal conditions. Here, two different case studies are used where the control drum configuration is optimized for the reactor to be critical with some desired power distribution that would satisfy peaking limits. A surrogate model for power distribution is developed based on a feedforward neural network. The process for determining weights for scalarization of the multiobjective optimization problem is also detailed. Six optimization algorithms: evolutionary strategies, differential evolution, grey wolf optimization, Harris hawks optimization, moth flame optimization and particle swarm optimization, are all applied to these cases and the results analyzed. Although all these algorithms will demonstrate optima-seeking behavior, for real-time control it is necessary to identify the best algorithm to efficiently provide reasonable optima without operator interference. The moth flame optimization algorithm was found to perform particularly well on both cases. Overall, it was found that the algorithms capable of supplying the best optima were also the most consistent. Finally, the found optima were verified with the original model used to train surrogates.
22 GENERAL STUDIES OF NUCLEAR REACTORS↗
Controlling the Magneto-Optical Response in Ultrathin Films of EuO 1– x via Interface Engineering with Ferroelectric BaTi 2 O 5
Utilizing pulsed laser deposition, a film of EuO 1–x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi 2 O 5 thin film on top of the EuO 1–x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi 2 , which suggests Si or Eu diffuses across the MgO buffer layer. EuO 1–x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi 2 O 5 films grown on the EuO 1–x films. Furthermore, the antiferromagnetic behavior is not seen in thicker EuO 1–x thin films when integrated with other ferroelectric (FE) phases of the BaO–TiO 2 system, suggesting an origin in the perturbed charge population at the BaTi 2 O 5 /EuO 1–x interface.
36 MATERIALS SCIENCE↗
Long-range optical coupling with epsilon-near-zero materials
Long-range resonant quantum tunneling of electrons happens across potential barriers when the wavefunction interferes constructively outside the barrier. Here we demonstrate an analogy in optical systems based on epsilon-near-zero materials, achieving phase-modulated, long-range optical interactions between transparent semiconducting oxide layers beyond the evanescent photonic coupling. Distinct from weak thin-film interference, intense electromagnetic fields confined within the epsilon-near-zero thin films show anti-correlated intensity oscillations as a function of interlayer separation up to hundreds of microns. The oscillatory, anti-correlated electromagnetic field intensities were probed by second harmonic generation from wedged indium tin oxide multilayers. Such a system that hosts subwavelength mode footprint and simultaneously long-range radiative coupling offers prospects for long-distance optical communication, large-scale photonic circuits, and hybrid quantum photonic systems.
Wang, Danqing [Fudan University, Shanghai (China);↗
Low-temperature high-frequency dynamic magnetic susceptibility of classical spin-ice Dy 2 Ti 2 O 7
In this study, radio-frequency (14.6 MHz) AC magnetic susceptibility, , of Dy 2 Ti 2 O 7 was measured using self-oscillating tunnel-diode resonator. Measurements were made with the excitation AC field parallel to the superimposed DC magnetic field up to 5 T in a wide temperature range from 50 mK to 100 K. At 14.6 MHz, a known broad peak of from kHz—range audio-frequency measurements around 15 K for both [111] and [110] directions shifts to 45 K, continuing the Arrhenius activated behavior with the same activation energy barrier of E a ≈ 230 K. Magnetic field dependence of along [111] reproduces previously reported low-temperature two-in-two-out to three-in-one-out spin configuration transition at about 1 T, and an intermediate phase between 1 and 1.5 T. The boundaries of the intermediate phase show reasonable overlap with the literature data and connect at a critical endpoint of the first order transition line, suggesting that these features are frequency independent. An unusual upturn of the magnetic susceptibility at T → 0 was observed in magnetic fields between 1.5 T and 2 T for both magnetic field directions, before fully polarized configuration sets in above 2 T.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Possible unconventional order parameter in single crystals of SrPt 3 P superconductor
Here, anisotropic properties of single crystals of SrPt 3 P were studied using London penetration depth and electrical resistivity measurements. The upper critical field, $H_{c2}(T)$, was determined from four-probe electrical resistivity measurements for three orthogonal directions of a magnetic field with respect to the crystal. The London penetration depth, $λ(T)$, was determined from the magnetic susceptibility of the Meissner–London state measured using a tunnel-diode resonator technique. Whereas $H_{c2}(T)$ and the normal-state $ρ(T)$ are practically identical for all three magnetic field orientations, the London penetration depth shows significant unidirectional anisotropy. The low-temperature $λ(T)$ is exponentially attenuated when a small excitation radiofrequency magnetic field, $H_{rf}$, is applied along the c"-direction, in which case screening currents flow in the a"b"-plane, while for the other two orientations, $H_{rf}$∥ a" and $H_{rf}$ ∥ b", the London penetration depth shows a much stronger, $λ(T)$ ~ T 2 , variation. Such unusual and contrasting behavior of the two anisotropies, $γ_{H}$(T) = $H_{c2}$/$H_{c2,c}$ = $ξ_{ab}$/$ξ_{c}$ and $γ_{λ}$(T) = $λ_{c}$\$λ_{ab'}$, imposes significant constraints on the possible order parameter. Although our measurements are insufficient to derive conclusively the superconducting gap anisotropy, the order parameter with two point nodes and a modulation in the perpendicular direction is qualitatively consistent with the experimental observations.
anisotropic superconducting gap↗