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At least 127 records · Page 7

Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

Dhere, Neelkanth G.↗

Non-mass-analyzed ion implantation equipment for high volume solar cell production

Equipment designed for junction formation in silicon solar cells is described. The equipment, designed for a production level of approximately one megawatt per year, consists of an ion implanter and annealer. Low cost is achieved by foregoing the use of mass analysis during the implantation, and by the use of a belt furnace for annealing. Results of process development, machine design and cost analysis are presented.

Armini, A. J.↗

Application of semiconductor diffusants to solar cells by screen printing

Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Evans, J. C., Jr.↗

Solar silicon via the Dow Corning process

Carbon, as a reductant for quartz, must be made available so as to have suitable reactivity in conjunction with high purity, especially with respect to boron and phosphorus. A detailed experimental plan was developed to do this. Different sources of carbon were selected to be subjected to various purification methods and reactivity-enhancement processes. A developmental scale arc furnace was installed to perform quartz-carbon reactivity testing.

Hunt, L. P.↗

Application of laser annealing to solar cell junction formation

The possibility of using high-energy Q-switched Nd:glass lasers to form pn junctions in solar cells by annealing ion-implanted substrates is investigated. The properties of laser annealed cells are analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicate the laser annealed substrates to be damage-free and electrically active. Similar reference analysis of ion-implanted furnace-annealed substrates reveals the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibit excellent conversion efficiency. It is noted that additional improvements are anticipated once the anneal parameters for a back surface field are optimized.

Katzeff, J. S.↗

Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications

Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.

Khattak, C. P.↗

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗

Evaporation in equilibrium, in vacuum, and in hydrogen gas

Evaporation experiments were conducted for SiO2 in three different conditions: in equilibrium, in vacuum, and in hydrogen gas. Evaporation rate in vacuum is about two orders of magnitude smaller than that in equilibrium, which is consistent with previous works. The rate in hydrogen gas changes depending on hydrogen pressure. The rate at 10 exp -7 bar of hydrogen pressure is as small as that of free evaporation, but at 10 exp -5 bar of hydrogen pressure it is larger than that in equilibrium. In equilibrium and in vacuum, the evaporation rate is limited by decomposition of SiO2 on the crystal surface, but it is limited by a diffusion process for evaporation in hydrogen gas. Therefore, evaporation rate of minerals in the solar nebula can be shown neither by that in equilibrium nor by that in vacuum. The maximum temperature of the solar nebula at the midplane at 2-3 AU where chondrites are believed to have originated is calculated to be as low as 150 K, 1500 K, or in between them. The temperature is, in any case, not high enough for total evaporation of the interstellar materials. Therefore, evaporation of interstellar materials is one of the most important processes for the origin and fractionation of solid materials. The fundamental process of evaporation of minerals has been intensively studied for these several years. Those experiments were carried out either in equilibrium or in vacuum; however, evaporation in the solar nebula is in hydrogen (and much smaller amount of helium) gas. In order to investigate evaporation rate and compositional (including isotopic) fractionation during evaporation, vaporization experiments for various minerals in various conditions are conducted. At first, SiO2 was adopted for a starting material, because thermochemical data and its nature of congruent vaporization are well known. Experiments were carried out in a vacuum furnace system.

Nagahara, Hiroko↗

Nanotube Production Devices Expand Research Capabilities

In order for the Hubble Space Telescope to take incredible, never-seen-before shots of celestial bodies and then send them back to Earth, the spacecraft needs power. While in orbit, Hubble cannot plug into an electrical outlet or stop at a store for some batteries. One of the ways NASA supplies power aboard a spacecraft is by harnessing energy from the most powerful entity in the solar system: the Sun. Since the 1960s, photovoltaic technology, or technology that converts sunlight into electricity, has been instrumental in the exploration of space. To build upon existing photovoltaic technology, NASA s Glenn Research Center has worked on a variety of innovative designs and materials to incorporate into photovoltaic cells, the building blocks of solar power systems. One of these materials is the carbon nanotube - a tiny structure about 50,000 times finer than the average human hair, with notably high electrical and thermal conductivity and an extreme amount of mechanical strength. Such properties give carbon nanotubes great potential to enhance the reliability of power generation and storage devices in space and on Earth. Dennis J. Flood, the branch chief of the photovoltaic division at Glenn in the 1990s, was looking into using carbon nanotubes to improve the efficiency of solar cells when he ran into a major roadblock - high-quality carbon nanotubes were not readily available. To address this problem, one of the chemists in Flood s group came up with a process and system for growing them. A senior chemist at Glenn, Aloysius F. Hepp, devised an injection chemical vapor deposition process using a specific organometallic catalyst in a two-zone furnace. Hepp's group found the unique process produced high-quality carbon nanotubes with less than 5 percent metal impurity. In addition, the process was more efficient than existing techniques, as it eliminated pre-patterning of the substrate used for growing the nanotubes, a timely and cost-prohibitive step.

Source record↗

Vacuum Hold-Down System for Heat-Treating Thin Films

In improved furnace concept for heat-treating thin films, vacuum ports in vacuum plate(s) hold films connected together in zones so vacuum applied separately to each zone. Allows material being held to shrink or expand while still being held in place. Unclamped zones expand or contract , relieving local stresses so entire sheet accommades thermally induced changes without cracking. Applications include manufacture of thin semiconductor films for solar cells and of membranes for electrolytic production of oxygen.

Collins, Earl R., Jr.↗

Ion-implanted laser annealed silicon solar cells

Development of low cost solar cells fabrication technology is being sponsored by NASA JPL as part of the Low Cost Solar Array Project (LSA). In conformance to Project requirements ion implantation and laser annealing were evaluated as junction formation techniques offering low cost-high throughput potential. Properties of cells fabricated utilizing this technology were analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicated the laser annealed substrates to be damage free and electrically active. Similar analysis of ion implanted furnace annealed substrates revealed the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibited improved spectral response and conversion efficiency in comparison to furnace annealed cells. An economic projection for LSA indicates a potential for considerable savings from laser annealing technology.

Katzeff, J. S.↗

Potential productivity benefits of float-zone versus Czochralski crystal growth

Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

Abe, T.↗

Extraterrestrial Helium (He@C60) Trapped in Fullerenes in the Sudbury Impact Structure

Fullerenes (C60 and C70) have recently been identified in a shock-produced breccia (Onaping Formation) associated with the 1.85-Ga Sudbury Impact Crater. The presence of parts-per-million levels of fullerenes in this impact structure raises interesting questions about the processes that led to the formation of fullerenes and the potential for delivery of intact organic material to the Earth by a large bolide (e.g., asteroid or comet). Two possible scenarios for the presence of fullerenes in the Sudbury impact deposits are that (1) fullerenes are synthesized within the impact plume from the C contained in the bolide; or (2) fullerenes are already present in the bolide and survived the impact event. The correlation of C and trapped noble gas atoms in meteorites is well established. Primitive meteorites contain several trapped noble gas components that have anomalous isotopic compositions, some of which may have a presolar origin. Several C-bearing phases, including SiC, graphite, and diamond, have been recognized as carriers of trapped noble gases. It has also been suggested that fullerenes (C60 and C70) might be a carrier of noble gas components in carbonaceous chondrites. Recently, fullerenes have been detected in separate samples in the Allende meteorite. Carbon-60 is large enough to enclose the noble gases He, Ne, Ar, Kr, and Xe, but it is too small to contain diatomic gases such as N2 or triatomic gases such as CO2. Recent experimental work has demonstrated that noble gases of a specific isotopic composition can be introduced into synthetic fullerenes at high temperatures and pressures; these encapsulated gases can then be released by the breaking of one or more C bonds during step-heating under vacuum. These thermal-release patterns for He encapsulated within the C60 molecule (He@C60) are similar to the patterns for acid residues of carbonaceous chondrites, suggesting that fullerenes could be an additional carrier of trapped noble gases in acid residues of meteorites. Analysis and Results: In order to characterize the noble gas compositions of the Sudbury fullerenes, we undertook a systematic study of acid-resistant residues throughout the C-rich layer (Black member) of the Onaping Formation. Samples were demineralized and extracted using standard techniques. The Onaping extracts were analyzed using several techniques, including UV-Vis adsorption, electro spray mass spectrometry, and laser desorption (linear and reflectron) time-of-flight (TOF) mass spectrometry (LDMS). The Sudbury fullerenes were then separated and purified using HPLC coupled with a photo diode array detector. The HPLC extracts containing the purified fullerenes were loaded into a metal tube furnace within a glove box under a N atmosphere in preparation for noble gas analyses. The 3-He and 4-He content of the fullerene extracts was measured using previously reported standard techniques . Discussion: Fullerenes (C60 and C70) in the Sudbury Impact Structure have been found to contain trapped He with a 3-He/4-He ratio greater than 5 x 10(exp -4). The 3-He/4-He ratio exceeds the accepted solar value by more than 30% and is more than 10x higher than the maximum reported mantle value. Terrestrial nuclear reactions or cosmic-my bombardment are not sufficient to generate such a high ratio. The 3-He/4-He ratios in the Sudbury fullerenes are similar to those determined for interplanetary dust particles. The greater-than-solar ratios of 3-He/4-He in the Sudbury fullerenes may indicate a presolar origin, although alternative mechanisms occurring in the ISM to explain these high ratios (e.g., spallation reactions, selective He implantation, etc.) cannot be entirely ruled out. We are currently attempting to isolate enough fullerene material to measure anomalous Ne (or Kr or Xe) contained within the C60 (e.g., the "pure" 22-Ne component) and thus determine whether the Sudbury fullerenes are indeed presolar in origin.

Becker, L.↗

Alternate methods of applying diffusants to silicon solar cells

Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.

Brock, T. W.↗

Design, fabrication and test of prototype furnace for continuous growth of wide silicon ribbon

A program having the overall objective of growing wide, thin silicon dendritic web crystals quasi-continuously from a semi-automated facility is discussed. The design considerations and fabrication of the facility as well as the test and operation phase are covered; detailed engineering drawings are included as an appendix. During the test and operation phase of the program, more than eighty growth runs and numerous thermal test runs were performed. At the conclusion of the program, 2.4 cm wide web was being grown at thicknesses of 100 to 300 micrometers. As expected, the thickness and growth rate are closely related. Solar cells made from this material were tested at NASA-Lewis and found to have conversion efficiencies comparable to devices fabricated from Czochralski material.

Duncan, C. S.↗

Development of pulsed processes for the manufacture of solar cells

Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.

Minnucci, J. A.↗

Silicon web process development

Thirty-five (35) furnace runs were carried out during this quarter, of which 25 produced a total of 120 web crystals. The two main thermal models for the dendritic growth process were completed and are being used to assist the design of the thermal geometry of the web growth apparatus. The first model, a finite element representation of the susceptor and crucible, was refined to give greater precision and resolution in the critical central region of the melt. The second thermal model, which describes the dissipation of the latent heat to generate thickness-velocity data, was completed. Dendritic web samples were fabricated into solar cells using a standard configuration and a standard process for a N(+) -P-P(+) configuration. The detailed engineering design was completed for a new dendritic web growth facility of greater width capability than previous facilities.

Duncan, C. S.↗

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗