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Very long wavelength InAs/InAsSb type-II superlattice barrier infrared detectors and focal plane arrays
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Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
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Complementary Barrier Infrared Detector
The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.
Complex Type-II Interband Cascade MQW Photodetectors
Multiple-quantum-well (MQW) photodetectors of a proposed type would contain active regions comprising multiple superlattice subregions. These devices would have complex structures: The superlattice of each subregion would be designed for enhanced absorption of photons in a desired wavelength band (typically in the infrared) and multiple subregions of different design would be cascaded for multicolor operation. The designs of these photodetectors would take advantage of the characteristic alignment of the edges of the electron-energy bands in type-II quantum-well structures: Within each finite superlattice, interband transitions would be used for detecting photons, and between finite superlattices, intraband relaxation and interband tunneling would be used for transport of charge carriers, all such as to enable detection of normally incident photons. Absorption of photons in the active region of a photodetector according to the proposal could be significantly enhanced by designing the superlattice/MQW structures to contain closely spaced energy states. The photodetector could be operated with a small bias to facilitate transport of charge carriers. The superlattices could be somewhat chirped, with a preferred transport direction.
Barrier infrared detector
A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.
Theoretical and material studies on thin-film electroluminescent devices
A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound state energies. The calculations were then applied to a new superlattice structure, the variablly spaced superlattice energy filter, (VSSEP) which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.
Theory of resonant tunneling in a variably spaced multiquantum well structure - An Airy function approach
A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented herein is easily extended to many layer structures where it is more accurate than other existing transfer matrix or Wentzel-Kramers-Brillouin (WKB) models. The transmission resonances are compared to the bound-state energies calculated for a finite square well under bias using either an asymmetric square-well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound-state energies. The calculations were then applied to a new superlattice structure, the variably spaced superlattice energy filter, which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.
Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometry
Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 'barrier' and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.
III-V Infrared Research at the Jet Propulsion Laboratory
Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.
Modulation Transfer Function of Infrared Focal Plane Arrays
Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. In this presentation we will discuss the detail MTF measurements of 1024x1024 pixels mid -wavelength and long- wavelength quantum well infrared photodetector, and 320x256 pixels long- wavelength InAs/GaSb superlattice infrared focal plane arrays (FPAs). Long wavelength Complementary Barrier Infrared Detector (CBIRD) based on InAs/GaSb superlattice material is hybridized to recently designed and fabricated 320x256 pixel format ROIC. The n-type CBIRD was characterized in terms of performance and thermal stability. The experimentally measured NE delta T of the 8.8 micron cutoff n-CBIRD FPA was 18.6 mK with 300 K background and f/2 cold stop at 78K FPA operating temperature. The horizontal and vertical MTFs of this pixel fully delineated CBIRD FPA at Nyquist frequency are 49% and 52%, respectively.
Variation of refractive index in strained In(x)Ga(1-x)As-GaAs heterostructures
In(x)Ga(1-x)As-GaAs heterostructures and strained-layer superlattices can be used as optical waveguides. For such applications it is important to know explicitly the refractive index variation with mismatch strain and with alloying in the ternary layer. Starting from the Kramers-Kronig integral dispersion relations, a model has been developed from which the refractive index change in the ternary layer of In(x)Ga(1-x)As-GaAs heterojunctions can be calculated. The results are presented and discussed. The expected changes in a superlattice have been qualitatively predicted.
Superstructures and multijunction cells for high efficiency energy conversion
Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.
Photovoltaic-Driven Multiple-Quantum-Well Modulator
Proposed high-performance spatial light modulator consists of multiple-quantum-well, strain-layer superlattice similar to one described in accompanying article, "Strain-Layer-Superlattice Light Modulator" (NPO-16915). Device differs from other one, operates in transmission rather than in resonant reflection and therefore includes only one stack of GaAs/InAs layers having total thickness less than penetration depth (1 to 2 micrometer) of optical modulating signal. Alternating, semitransparent semiconductor layers contain space-charge barriers forming quantum wells. Modulating light (with photon energy greater than semiconductor band gap) induces photovoltaic action, which affects transmission of modulated light (having photon energy less than band gap).
Approaches toward a blue semiconductor laser
Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.
Analysis of energy states in modulation doped multiquantum well heterostructures
A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.