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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Liquid Bipropellant Microrocket Concept Under Development

Fundamental research into the feasibility of microrockets for primary propulsion and attitude control for far-term micro/integrated spacecraft is being performed. These rockets would be fabricated using microelectrical and mechanical systems (MEMS) technology. The enabling technology is being developed at the Massachusetts Institute of Technology (MIT). The NASA/MIT program leverages a very large Army Research Office and Defense Advanced Research Projects Agency (DARPA) program for the development of microturbine technology. The microrocket motor is complete with regenerative cooling, turbopumps, and control valves etched onto the same chip. They would be fabricated in large numbers in parallel using semiconductor manufacturing techniques. The technology may lead to the development of microsatellites as fully integrated MEMS devices that could be mass produced at a fraction of the cost of current satellites.

Schneider, Steven J.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS2002

Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation

Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devices. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed.

Zhu, Shen↗
NASA NTRS2000

Development of Electronics for Low Temperature Space Missions

The operation of electronic systems at cryogenic temperatures is anticipated for many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about -183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program on low temperature electronics at the NASA Glenn Research Center focuses on the development of efficient power systems capable of surviving and exploiting the advantages of low temperature environments. Inhouse efforts include the design, fabrication, and characterization of low temperature power systems and the development of supporting technologies for low temperature operations, such as dielectric and insulating materials, semiconductor devices, passive power components, opto-electronic devices, as well as packaging and integration of the developed components into prototype flight hardware.

Patterson, Richard L.↗
NASA NTRS2003

New Methods of Sample Preparation for Atom Probe Specimens

Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.

rock varnish↗
NASA NTRS2003

Microelectromechanical System (MEMS) Device Being Developed for Active Cooling and Temperature Control

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.

Beach, Duane E.↗
NASA NTRS1992

SNS Heterojunctions With New Combinations Of Materials

New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.

Vasquez, Richard P.↗
NASA NTRS1996

Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

Haller, E. E.↗
NASA NTRS1999

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗
NASA NTRS2000

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗
NASA NTRS1981

Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

Miller, M. D.↗
NASA NTRS1985

Semiconductor Laser Phased Array

Oscillations synchronized and modulated individually for beam steering. Phased array of GaAs infrared lasers put out powerful electronically-steerable coherent beam. Fabricated as integrated circuit on GaAs chip, new device particularly suited to optical communications, optical data processing and optical detection and ranging systems.

Katz, J.↗
NASA NTRS1995

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

Mehdi, Imran↗
NASA NTRS1980

Improved vapor-growth technique for III-V compound lasers

Vapor Growth technical of multilayered semiconductor devices based on elements in groups 3, 4, and 5 such as transmission photo cathodes and heterojunction lasers, reduces thermal decomposition and improves performance. In addition technique allows fabrication of GaP/GaAsP/InGaP, visable CW lasers through reduction of thermal decomposition.

Bujocchi, C. J.↗
NASA NTRS2002

Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

Leopold, Daniel J.↗
NASA NTRS2011

Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

Kim, Hyun-Jung↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗