SEARCH · Search NASA

Results for “Si integration”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

All sources NASA NTRS DOE OSTI

NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗

NASA NTRS2016

Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Park, Yeonjoon↗

NASA NTRS2017

Method of Fabricating Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

Park, Yeonjoon↗

NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗

NASA NTRS2000

First Light Measurements with the XMM-Newton Reflection Grating Spectrometers: Evidence for an Inverse First Ionization Potential Effect and Anomalous Ne Abundance in the Coronae of HR 1099

The RS CVn binary system HR 1099 was extensively observed by the XMM-Newton observatory in February 2000 as its first-light target. A total of 570 ks of exposure time was accumulated with the Reflection Grating Spectrometers (RGS). The integrated X-ray spectrum between 5-38A is of unprecedented quality and shows numerous features attributed to transitions of the elements C, N, O, Ne, Mg, Si, S, Fe. Ni, and probably others. We perform an in-depth study of the elemental composition of the average corona of this system, and find that the elemental abundances strongly depend on the first ionisation potential (FIP) of the elements. But different from the solar coronal case, we find an inverse FIP effect, i.e., the abundances (relative to oxygen) increase with increasing FIP. Possible scenarios, e.g., selective enrichment due to Ne-rich flare-like events, are discussed.

Brinkman, A. C.↗

NASA NTRS1983

Si:Bi switched photoconducttor infrared detector array

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

Eakin, C. E.↗

NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗

NASA NTRS1985

A measurement of the cosmic ray elements C to Fe in the two energy intervals 0.5-2.0 GeV/n and 20-60 GeV/n

The study of the cosmic ray abundances beyond 20 GeV/n provides additional information on the propagation and containment of the cosmic rays in the galaxy. Since the average amount of interstellar material traversed by cosmic rays decreases as its energy increases, the source composition undergoes less distortion in this higher energy region. However, data over a wide energy range is necessary to study propagation parameters. Some measurements of some of the primary cosmic ray abundance ratios at both low (near 2 GeV/n) and high (above 20 GeV/n) energy are given and compared to the predictions of the leaky box mode. In particular, the integrated values (above 23.7 GeV/n) for the more abundant cosmic ray elements in the interval C through Fe and the differential flux for carbon, oxygen, and the Ne, Mg, Si group are presented. Limited statistics prevented the inclusion of the odd Z elements.

Derrickson, J. H.↗

NASA NTRS2018

Characterizations of a KHz Pulsed Laser Detection System

A KHz Pulsed Laser Detection System was developed employing the concept of charge integration with an electrometer, in the NASA Goddard Space Flight Center, Code 618 Calibration Lab for the purpose of using the pulsed lasers for radiometric calibration. Comparing with traditional trans-impedance (current-voltage conversion) detection systems, the prototype of this system consists of a UV-Enhanced Si detector head, a computer controlled shutter system and a synchronized electrometer. The preliminary characterization work employs light sources running in either CW or pulsed mode. We believe this system is able to overcome the saturation issue when a traditional trans-impedance detection system is used with the pulsed laser light source, especially with high peak-power pulsed lasers operating at kilohertz repetition rates (e.g. Ekspla laser or KHz OPO). The charge integration mechanism is also expected to improve the stability of measurements for a pulsed laser light source overcoming the issue of peak-to-peak stability. We will present the system characterizations including signal-to-noise ratio and uncertainty analysis and compare results against traditional trans-impedance detection systems.

Ding, Leibo↗

NASA NTRS2018

Characterizations of a KHz Pulsed Laser Detection System

Ding, Leibo↗

NASA NTRS1986

Tailorable Infrared Sensing Devices

Alternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.

Cheng, L. J.↗

NASA NTRS1984

Integrating amplifiers using cooled JFETs

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

Low, F. J.↗

NASA NTRS1979

Pioneer-Venus solar flux radiometer

The paper presents the design and performance characteristics of the Solar Flux Radiometer flown on the Large Probe of the Pioneer-Venus Multiprobe spacecraft. Radiance measurements of the Venusian atmosphere in spectral channels between 400 and 1800 nm as a function of altitude were made, along with elevation and azimuthal measurements of the radiation field performed with five optical channels. Filtered Si and Ge photovoltaic detector output currents were processed with logarithmic transimpedance converters prior to being multiplexed and digitized. Atmospheric sampling in elevation and azimuth was done according to a Gaussian integration scheme; the received data were used to determine the deposition of solar energy in the Venus atmosphere along with upward and downward fluxes and radiances with an altitude resolution of several hundred meters between 67 km and the surface.

Palmer, J. M.↗

NASA NTRS1984

Chondrules in the bishunpur L13 chondrite

Twenty-six chondrules, chondrule fragments or clasts were analyzed. An automated wavelength dispersive instrument with a 90 micrometer beam integrated a series of analyses in traverses across each object. Depending on the size of the cross-sectional area, from 1 to 21 analyses were performed for each bulk analysis. Si, Ti, Al, Cr, Fe, Ni, Mn, Mg, Ca, Na, K and S were determined, and an analyzed augite was used as a secondary standard before and after each set of analyses. The work is part of a study of chondrule rims, interchondrule matrix, chondrules and clasts in unequilibrated ordinary chondrites. Only two of the twenty-six objects analyzed have Ca/Al atomic ratios greater than the ordinary chondritic average of 0.74. The bulk meteorite has a normal Ca/Al ratio, so presumably a Ca-rich, Al-poor component must be present to compensate for chondrules and chlasts. This component is unlikely to be rim or matrix, but may be phosphate associated with metal or sulphide. Na/Al ratios range from 1 to almost zero, but there is no hiatus as in a suite of Manych chondrules and glasses.

Hutchison, R.↗

NASA NTRS1994

High-velocity plasma in the transition region of AU Microscopii: Evidence for magnetic reconnection and saturated heating during quiescent and flaring conditions

We analyze high-resolution HST spectra of the dMOe flare star AU Mic, including the profiles of the C IV 1548.2 A, 1550.8 A and Si IV 1393.8 A, 1402.8 A lines obtained with the G160M grating of the Goddard High-Resolution Spectrograph. The quiescent profiles of the C IV and Si IV lines are broad, and not simple Gaussians in shape. Flux in the C IV and Si IV lines, for example, can be measured reliably out to about +/- 200 km/s from line center. Each of the C IV and Si IV profiles can be fitted accurately by two Gaussians (one narrow and the other broad) centered on nearly the same wavelength, with the narrower component accounting for roughly 60% ofthe total integrated flux. The narrow components have similar line widths to those observed in solar active and quiet regions. The broad Gaussian components of the AU Mic line profiles are reminiscent of the broad C IV profiles observed in solar transition region explosive events, which are thought to be associated with emerging magnetic flux regions where field reconnection occurs.

Linsky, Jeffrey L.↗

NASA NTRS2012

MgB2-Based Bolometer Array for Far Infra-Red Thermal Imaging and Fourier Transform Spectroscopy Applications

The mid-superconducting critical temperature (T(sub c) approximately 39 K) of the simple binary, intermetallic MgB, [1] makes it a very good candidate for the development of the next generation of electrooptical devices (e.g. [2]). In particular, recent advances in thin film deposition teclmiques to attain higb quality polycrystalline thin film MgB, deposited on SiN-Si substrates, with T(sub c) approximately 38K [3] coupled with the low voltage noise performance of the film [4] makes it higbly desirable for the development of moderately cooled bolometer arrays for integration into future space-bourne far infra-red (FIR) spectrometers and thermal mappers for studying the outer planets, their icy moons and other moons of interest in the 17-250 micrometer spectral wavelength range. Presently, commercially available pyroelectric detectors operating at 300 K have specific detectivity, D(*), around 7 x 10(exp 8) to 2 x 10(exp 9) centimeters square root of Hz/W. However, a MgB2 thin film based bolometer using a low-stress (less than 140 MPa) SiN membrane isolated from the substrate by a small thermal conductive link, operating at 38 K, promises to have two orders of magnitude higher specific detectivity [5][6].

Lakew, B.↗

NASA NTRS1992

Optical systems integrated modeling

An integrated modeling capability that provides the tools by which entire optical systems and instruments can be simulated and optimized is a key technology development, applicable to all mission classes, especially astrophysics. Many of the future missions require optical systems that are physically much larger than anything flown before and yet must retain the characteristic sub-micron diffraction limited wavefront accuracy of their smaller precursors. It is no longer feasible to follow the path of 'cut and test' development; the sheer scale of these systems precludes many of the older techniques that rely upon ground evaluation of full size engineering units. The ability to accurately model (by computer) and optimize the entire flight system's integrated structural, thermal, and dynamic characteristics is essential. Two distinct integrated modeling capabilities are required. These are an initial design capability and a detailed design and optimization system. The content of an initial design package is shown. It would be a modular, workstation based code which allows preliminary integrated system analysis and trade studies to be carried out quickly by a single engineer or a small design team. A simple concept for a detailed design and optimization system is shown. This is a linkage of interface architecture that allows efficient interchange of information between existing large specialized optical, control, thermal, and structural design codes. The computing environment would be a network of large mainframe machines and its users would be project level design teams. More advanced concepts for detailed design systems would support interaction between modules and automated optimization of the entire system. Technology assessment and development plans for integrated package for initial design, interface development for detailed optimization, validation, and modeling research are presented.

Shannon, Robert R.↗

NASA NTRS2003

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗