Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon Waveguide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Solid State Technology Branch of NASA Lewis Research Center Second Annual Digest, June 1989 - June 1990

A collection of papers and presentations authored by the branch between June 1989 and June 1990 is presented. The papers are organized into four sections. Section 1 deals with research in microwave circuits and includes full integrated circuits, the demonstration of optical/RF interfaces, and the evaluation of some hybrid circuitry. Section 2 indicates developments in coplanar waveguides and their use in breadboard circuits. Section 3 addresses high temperature superconductivity and includes: thin film deposition, transport measurement of film characteristics, RF surface resistant measurements, substrate permittivity measurements, measurements of microstrip line characteristics at cryogenic temperatures, patterning of superconducting films, and evaluation of simple passive microstrip circuitry based on YBaCuO films. Section 4 deals with carbon films, silicon carbide, GaAs/AlGaAs, HgCdTe, and other materials.

Source record↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
NASA NTRS1996

A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions

A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

DeLange, Gert↗
NASA NTRS1996

A Low-noise Micromachined Millimeter-Wave Heterodyne Mixer using Nb Superconducting Tunnel Junctions

A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

DeLange, Gert↗
NASA NTRS1998

Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing

A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

Hu, Qing↗
NASA NTRS2009

Fabrication of an Antenna-Coupled Bolometer for Cosmic Microwave Background Polarimetry

We describe the development of a detector for precise measurements of the cosmic microwave background polarization. The detector employs a waveguide to couple light between a pair of Mo/Au superconducting transition edge sensors (TES) and a feedhorn. Incorporation of an on-chip ortho-mode transducer (OMT) results in high isolation. The OMT is micromachined and bonded to the microstrip and TES circuits in a low temperature wafer bonding process. The wafer bonding process incorporates a buried superconducting niobium layer with a single crystal silicon layer which serves as the leg isolated TES membrane and as the microstrip dielectric. We describe the micromachining and wafer bonding process and report measurement results of the microwave circuitry operating in the 29-43GHz band along with Johnson noise measurements of the TES membrane structures and development of Mo/Au TES operating under '00mK.

Denis, K.L.↗
NASA NTRS1977

Acoustic energy shaping

A suspended mass is shaped by melting all or a selected portion of the mass and applying acoustic energy in varying amounts to different portions of the mass. In one technique for forming an optical waveguide slug, a mass of oval section is suspended and only a portion along the middle of the cross-section is heated to a largely fluid consistency. Acoustic energy is applied to opposite edges of the oval mass to press the unheated opposite edge portions together so as to form bulges at the middle of the mass. In another technique for forming a ribbon of silicon for constructing solar cells, a cylindrical thread of silicon is drawn from a molten mass of silicon, and acoustic energy is applied to opposite sides of the molten thread to flatten it into a ribbon.

Wang, T. G.↗
NASA NTRS2022

Silicon Photonic Transceiver for Spacecraft Navigational Lidar

NASA is developing an entry, descent, and landing (EDL) lidar system, the Navigation Doppler Lidar (NDL), for high-precision landing on the Moon, Mars, and beyond. The current flight NDL systems use 1550 nm fiber-optic components for frequency-modulated continuous wave (FMCW) ranging beyond 5 km, but have reduced performance under vibrational and thermal stresses during EDL. Here we describe recent efforts to develop a breadboard silicon photonic optical transceiver for integration into NDL to reduce instrument size and improve robustness to environment and demonstrate the optical balanced receiver performance during testing with the breadboard NDL unit. Initial testing shows improved suppression of common mode noise by 25 dB over the current receiver, but a 10 dB reduction in signal to noise ratio (SNR) resulting from coupling losses from fiber to the on-chip waveguides. Future work will target reduced coupling loss, hermetic packaging, and co-integration of a single sideband suppressed carrier modulator into the same chip.

Photonic Integrated Circuits↗
NASA NTRS1993

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗
NASA NTRS1991

Aperture efficiency of integrated-circuit horn antennas

The aperture efficiency of silicon integrated-circuit horn antennas has been improved by optimizing the length of the dipole probes and by coating the entire horn walls with gold. To make these measurements, a new thin-film power-density meter was developed for measuring power density with accuracies better than 5 percent. The measured aperture efficiency improved from 44 percent to 72 percent at 93 GHz. This is sufficient for use in many applications which now use machined waveguide horns.

Guo, Yong↗
NASA NTRS2003

Propagation Characteristics of Finite Ground Coplanar Waveguide on Si Substrates With Porous Si and Polyimide Interface Layers

Measured and modeled propagation characteristics of Finite Ground Coplanar (FGC) waveguide fabricated on a 15 ohm-cm Si substrate with a 23 micron thick, 68% porous Si layer and a 20 micron thick polyimide interface layer are presented for the first time. Attenuation and effective permittivity as function of the FGC geometry and the bias between the center conductor and the ground planes are presented. It is shown that the porous Si reduces the attenuation by 1 dB/cm compared to FGC lines with only polyimide interface layers, and the polyimide on porous silicon demonstrates negligible bias dependence.

Ponchak, George E.↗
NASA NTRS2009

NASA Tech Briefs, January 2009

Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: The Radio Frequency Health Node Wireless Sensor System; Effects of Temperature on Polymer/Carbon Chemical Sensors; Small CO2 Sensors Operate at Lower Temperature; Tele-Supervised Adaptive Ocean Sensor Fleet; Synthesis of Submillimeter Radiation for Spectroscopy; 100-GHz Phase Switch/Mixer Containing a Slot-Line Transition; Generating Ka-Band Signals Using an X-Band Vector Modulator; SiC Optically Modulated Field-Effect Transistor; Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions; Metrology System for a Large, Somewhat Flexible Telescope; Economical Implementation of a Filter Engine in an FPGA; Improved Joining of Metal Components to Composite Structures; Machined Titanium Heat-Pipe Wick Structure; Gadolinia-Doped Ceria Cathodes for Electrolysis of CO2; Utilizing Ocean Thermal Energy in a Submarine Robot; Fuel-Cell Power Systems Incorporating Mg-Based H2 Generators; Alternative OTEC Scheme for a Submarine Robot; Sensitive, Rapid Detection of Bacterial Spores; Adenosine Monophosphate-Based Detection of Bacterial Spores; Silicon Microleaks for Inlets of Mass Spectrometers; CGH Figure Testing of Aspherical Mirrors in Cold Vacuums; Series-Coupled Pairs of Silica Microresonators; Precise Stabilization of the Optical Frequency of WGMRs; Formation Flying of Components of a Large Space Telescope; Laser Metrology Heterodyne Phase-Locked Loop; Spatial Modulation Improves Performance in CTIS; High-Performance Algorithm for Solving the Diagnosis Problem; Truncation Depth Rule-of-Thumb for Convolutional Codes; Efficient Method for Optimizing Placement of Sensors.

Source record↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
NASA NTRS1994

Flexible manufacturing for photonics device assembly

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Lu, Shin-Yee↗
DOE OSTI2024

Electrically interfaced Brillouin-active waveguide for microwave photonic measurements

New strategies for converting signals between optical and microwave domains could play a pivotal role in advancing both classical and quantum technologies. Traditional approaches to optical-to-microwave transduction typically perturb or destroy the information encoded on intensity of the light field, eliminating the possibility for further processing or distribution of these signals. In this paper, we introduce an optical-to-microwave conversion method that allows for both detection and spectral analysis of microwave photonic signals without degradation of their information content. This functionality is demonstrated using an optomechanical waveguide integrated with a piezoelectric transducer. Efficient electromechanical and optomechanical coupling within this system permits bidirectional optical-to-microwave conversion with a quantum efficiency of up to -54.16 dB. Leveraging the preservation of the optical field envelope in intramodal Brillouin scattering, we demonstrate a multi-channel microwave photonic filter by transmitting an optical signal through a series of electro-optomechanical waveguide segments, each with distinct resonance frequencies. Such electro-optomechanical systems could offer flexible strategies for remote sensing, channelization, and spectrum analysis in microwave photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗