Quantum efficiency of silicon in the vacuum ultraviolet.
Quantum efficiency of silicon measured from photoresponse of silicon surface-barrier photodiodes in vacuum ultraviolet
SILICON↗
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Advanced Detector and Waveform Digitizer for Water Vapor DIAL Systems
Measurement of atmospheric water vapor has become a major requirement for understanding moist-air processes. Differential absorption lidar (DIAL) is a technique best suited for the measurement of atmospheric water vapor. NASA Langley Research Center is continually developing improved DIAL systems. One aspect of current development is focused on the enhancement of a DIAL receiver by applying state-of-the-art technology in building a new compact detection system that will be placed directly on the DIAL receiver telescope. The newly developed detection system has the capability of being digitally interfaced with a simple personal computer, using a discrete input/output interface. This has the potential of transmitting digital data over relatively long distances instead of analog signals, which greatly reduces measurement noise. In this paper, we discuss some results from the new compact water vapor DIAL detection system which includes a silicon based avalanche photodiode (APD) detector, a 14-bit, 10-MHz waveform digitizer, a microcontroller and other auxiliary electronics. All of which are contained on a small printed-circuit-board. This will significantly reduce the weight and volume over the current CAMAC system and eventually will be used in a water vapor DIAL system on an unpiloted atmospheric vehicle (UAV) aircraft, or alternatively on an orbiting spacecraft.
Refaat, Tamer F.↗
Monolithic III-V/Silicon Spatial Light Modulator
Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.
Maserjian, Joseph↗
Radiation Response of Emerging High Gain, Low Noise Detectors
Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.
avalanche photodiodes↗
Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection
The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).
Aslam, Shahid↗
Evaluation of the electro-optic direction sensor
Evaluation of a no-moving-parts single-axis star tracker called an electro-optic direction sensor (EODS) concept is described and the results are given in detail. The work involved experimental evaluation of a breadboard sensor yielding results which would permit design of a prototype sensor for a specific application. The laboratory work included evaluation of the noise equivalent input angle of the sensor, demonstration of a technique for producing an acquisition signal, constraints on the useful field-of-view, and a qualitative evaluation of the effects of stray light. In addition, the potential of the silicon avalanche-type photodiode for this application was investigated. No benefit in noise figure was found, but the easily adjustable gain of the avalanche device was useful. The use of mechanical tuning of the modulating element to reduce voltage requirements was also explored. The predicted performance of EODS in both photomultiplier and solid state detector configurations was compared to an existing state-of-the-art star tracker.
Johnson, A. R.↗
Two-Photon-Absorption Scheme for Optical Beam Tracking
A new optical beam tracking approach for free-space optical communication links using two-photon absorption (TPA) in a high-bandgap detector material was demonstrated. This tracking scheme is part of the canonical architecture described in the preceding article. TPA is used to track a long-wavelength transmit laser while direct absorption on the same sensor simultaneously tracks a shorter-wavelength beacon. The TPA responsivity was measured for silicon using a PIN photodiode at a laser beacon wavelength of 1,550 nm. As expected, the responsivity shows a linear dependence with incident power level. The responsivity slope is 4.5 x 10(exp -7) A/W2. Also, optical beam spots from the 1,550-nm laser beacon were characterized on commercial charge coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) imagers with as little as 13.7 microWatts of optical power (see figure). This new tracker technology offers an innovative solution to reduce system complexity, improve transmit/receive isolation, improve optical efficiency, improve signal-to-noise ratio (SNR), and reduce cost for free-space optical communications transceivers.
Ortiz, Gerardo G.↗
Nano-multiplication region avalanche photodiodes and arrays
An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.
Zheng, Xinyu↗
Optical memory development. Volume 1: prototype memory system
The design, development, and implementation of a prototype, partially populated, million bit read-write holographic memory system using state-of-the-art components are described. The system employs an argon ion laser, acoustooptic beam deflectors, a holographic beam splitter (hololens), a nematic liquid crystal page composer, a photoconductor-thermoplastic erasable storage medium, a silicon P-I-N photodiode array, with lenses and electronics of both conventional and custom design. Operation of the prototype memory system was successfully demonstrated. Careful attention is given to the analysis from which the design criteria were developed. Specifications for the major components are listed, along with the details of their construction and performance. The primary conclusion resulting from this program is that the basic principles of read-write holographic memory system are well understood and are reducible to practice.
Cosentino, L. S.↗
Multiple-Event, Single-Photon Counting Imaging Sensor
The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.
Zheng, Xinyu↗
Solid state image sensing arrays
The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.
Sadasiv, G.↗
X-ray spectroscopy with silicon pin and avalanche photo diodes
Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.
Desai, U. D.↗
Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity
An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.
Culik, J.↗
Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet
Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.
Butner, C. L.↗
A payload to evaluate photodiodes for the detection of soft and hard x rays in a space environment using a Get Away Special
We propose to use the Get Away Special (GAS) facility to evaluate P-intrinsic-N (PIN) detectors and avalanche photodiodes (APD's) for the detection of both solar and nonsolar soft and hard x rays. We would like to fly both types of silicon detectors for the direct detection of the x ray photons in the energy range from 1 to 30 keV with an energy resolution of about 1 keV. We would also like to use both types of photodiodes viewing CsI(Tl) scintillators to extend the energy range up to 1 MeV with -6 percent resolution at 660 keV. Solar flares would be detected with this instrumentation during periods of solar pointing providing high energy resolution spectra with high time resolution. Similar data would be obtained in the scanning mode on nonsolar transient and steady x ray sources with the same instrumentation. A commandable door over the detectors would be required to allow measurements to be made as low as 1 keV.
Desai, Upendra D.↗
Nano-Multiplication-Region Avalanche Photodiodes and Arrays
Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.
Zheng, Xinyu↗
Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation
Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.
CMOS Image Sensor (CIS)↗
Development of Ultra-High Sensivity Silicon Carbide Detectors
A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.
Yan, Feng↗