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Results for “Single Event Upset (SEU)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Complementary heterojunction FET technology for space application

A 32-bit serial integer multiplier was designed to investigate the yield and performance of complementary heterojunction FET (CHFET) technology. This is the largest reported CHFET logic circuit. The maximum operating frequency was 500 MHz. Very low power dissipation of 3 mW was obtained at 5 MHz operation. Single-event upset (SEU) characteristics of CHFET devices and latches were also measured and indicates the potential for SEU hard circuits for space and military applications.

Larue, George↗
NASA NTRS1994

Diagnosing anomalies of spacecraft for space maintenance and servicing

Very often servicing of satellites is necessary to replace components which are responsible for anomalous behavior of satellite operations due to adverse interactions with the natural space environment. A major difficulty with this diagnosis is that those responsible for diagnosing these anomalies do not have the tools to assess the role of the space environment causing the anomaly. To address this issue, we have under development a new rule-based, expert system for diagnosing spacecraft anomalies. The knowledge base consists of over two-hundred rules and provides links to historical and environmental databases. Environmental causes considered are bulk charging, single event upsets (SEU), surface charging, and total radiation dose. The system's driver translates forward chaining rules into a backward chaining sequence, prompting the user for information pertinent to the causes considered. When the user selects the novice mode, the system automatically gives detailed explanations and descriptions of terms and reasoning as the session progresses, in a sense teaching the user. As such it is an effective tutoring tool. The use of heuristics frees the user from searching through large amounts of irrelevant information and allows the user to input partial information (varying degrees of confidence in an answer) or 'unknown' to any question. The system is available on-line and uses C Language Integrated Production System (CLIPS), an expert shell developed by the NASA Johnson Space Center AI Laboratory in Houston.

Lauriente, Michael↗
NASA NTRS1993

An Intelligent computer-aided tutoring system for diagnosing anomalies of spacecraft in operation

A new rule-based, expert system for diagnosing spacecraft anomalies is under development. The knowledge base consists of over two-hundred (200) rules and provides links to historical and environmental databases. Environmental causes considered are bulk charging, single event upsets (SEU), surface charging, and total radiation dose. The system's driver translates forward chaining rules into a backward chaining sequence, prompting the user for information pertinent to the causes considered. When the user selects the novice mode, the system automatically gives detailed explanations and descriptions of terms and reasoning as the session progresses, in a sense teaching the user. As such it is an effective tutoring tool. The use of heuristics frees the user from searching through large amounts of irrelevant information and allows the user to input partial information (varying degrees of confidence in an answer) or 'unknown' to any question. The system is available on-line and uses C Language Integrated Production System (CLIPS), an expert shell developed by the NASA Johnson Space Center AI Laboratory in Houston.

Rolincik, Mark↗
NASA NTRS1997

An Examination of Environment Perturbation Effects on Single Event Upset Rates

This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to changes in the direct ionization-inducing environment. An examination based on the nature of the SEU rate equation is presented for the case in which the perturbation is constant across varying particle linear energy transfer (LET). It is shown that the relative variation in SEU rate is equal to the relative perturbation in flux. Results are also presented for the case in which the environment perturbations exist in small LET bins. Through this analysis it is shown that the relative variation in expected SEU rate is equal to that in flux only for the LET regime in which the product of the cross section and differential flux is maximum.

Gates, Michele M.↗
NASA NTRS1998

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operating mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗
NASA NTRS1998

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operational mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗
NASA NTRS1995

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.

Croley, D. R.↗
NASA NTRS2001

Nonvolatile Memory Solution for Near-Term NASA Missions

Nonvolatile memory (NVM) system that could reliably function in extreme environments is one of the most critical components for many spacecrafts being developed for NASA missions to be launched in next four to seven years. NVM supports the computer system in saving and updating critical state data required for a warm restart after power cycling or in case of a power bus failure. It also provides a power independent mass storage capacity for the scientific data gathered by the instruments. In some cases the window for gathering such data is very small and occurs only once in a given mission. Commercially popular and fully developed Flash NVM technology is inappropriate for many reasons such as the limited read write cycles with slower access speeds, radiation intolerance, higher Single Event Upsets (SEU) rates, etc. It is desirable to have an NVM system based upon a robust cell technology making it immune to the SEUs and with sufficient radiation hardness. Availability of such NVM system seems to be still 5 to 10 years in the future. Meanwhile, it is possible to provide an interim hybrid solution by combining the existing rad-hard technologies. Additional information is contained in the original extended abstract.

Patel, J. U.↗
NASA NTRS2003

In-Flight Observations of Long-Term Single Event Effect(SEE)Performance on Orbview-2 and Xray Timing Explorer(XTE)Solid State Recorders (SSR)

This paper presents Single Event Effect (SEE) in-flight data on Solid State Recorders (SSR) that have been collected over a long period of time for two NASA spacecraft: Orbview-2 and XTE. SEE flight data on solid-state memories give an opportunity to study the behavior in space of SEE sensitive commercial devices. The actual Single Event Upset (SEU) rates can be compared with the calculated rates based on environment models and ground test data. The SEE mitigation schemes can also be evaluated in actual implementation. A significant amount of data has already been published concerning observed SEE effects on memories in space. However, most of the data presented cover either a short period of time or a small number of devices. The data presented here has been collected on a large number of devices during several years. This allows statistically significant information about the effect of space weather fluctuations on SEU rates, and the effectiveness of SEE countermeasures used to be analyzed. Only Orbview-2 data is presented in this summary. XTE data will be included in the final paper.

Poivey, Christian↗
NASA NTRS1996

Analysis of space radiation data of semiconductor memories

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Flight Experiment↗
NASA NTRS2005

Radiation Mitigation and Power Optimization Design Tools for Reconfigurable Hardware in Orbit

The Reconfigurable Hardware in Orbit (RHinO)project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. In the second year of the project, design tools that leverage an established FPGA design environment have been created to visualize and analyze an FPGA circuit for radiation weaknesses and power inefficiencies. For radiation, a single event Upset (SEU) emulator, persistence analysis tool, and a half-latch removal tool for Xilinx/Virtex-II devices have been created. Research is underway on a persistence mitigation tool and multiple bit upsets (MBU) studies. For power, synthesis level dynamic power visualization and analysis tools have been completed. Power optimization tools are under development and preliminary test results are positive.

French, Matthew↗
NASA NTRS2005

Ionizing Radiation Environment on the International Space Station: Performance vs. Expectations for Avionics and Material

The role of structural shielding mass in the design, verification, and in-flight performance of International Space Station (ISS), in both the natural and induced orbital ionizing radiation (IR) environments, is reported. Detailed consideration of the effects of both the natural and induced ionizing radiation environment during ISS design, development, and flight operations has produced a safe, efficient manned space platform that is largely immune to deleterious effects of the LEO ionizing radiation environment. The assumption of a small shielding mass for purposes of design and verification has been shown to be a valid worst-case approximation approach to design for reliability, though predicted dependences of single event effect (SEE) effects on latitude, longitude, SEP events, and spacecraft structural shielding mass are not observed. The Figure of Merit (FOM) method over predicts the rate for median shielding masses of about 10g/cm(exp 2) by only a factor of 3, while the Scott Effective Flux Approach (SEFA) method overestimated by about one order of magnitude as expected. The Integral Rectangular Parallelepiped (IRPP), SEFA, and FOM methods for estimating on-orbit (Single Event Upsets) SEU rates all utilize some version of the CREME-96 treatment of energetic particle interaction with structural shielding, which has been shown to underestimate the production of secondary particles in heavily shielded manned spacecraft. The need for more work directed to development of a practical understanding of secondary particle production in massive structural shielding for SEE design and verification is indicated. In contrast, total dose estimates using CAD based shielding mass distributions functions and the Shieldose Code provided a reasonable accurate estimate of accumulated dose in Grays internal to the ISS pressurized elements, albeit as a result of using worst-on-worst case assumptions (500 km altitude x 2) that compensate for ignoring both GCR and secondary particle production in massive structural shielding.

Koontz, Steven L.↗
NASA NTRS2006

Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM

The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.

Warren, Kevin M.↗
NASA NTRS2008

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

LaBel, Kenneth A.↗
NASA NTRS2009

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Buchner, S.↗