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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Feasibility and Reliability of a Single Layer Polymeric PV Backsheet in White, Transparent, or Luminescent Concentrator Options

A single layer polymeric backsheet material has been evaluated for use in silicon PV modules and as a luminescent solar collector. Physical and optical properties of the backsheet have been examined after damp heat, thermal cycling, and UV exposure for two different polymeric grades and three different pigment options including white, transparent, and photo-luminescent. As the importance of developing a white backsheet that is cost-effective, recyclable, and reliable is evident, the increased availability and use of bifacial cells is bound to increase the demand for transparent backsheets as well. In today's market, the cost of a clear backsheet is significantly higher than a white backsheet which is motivation for research and development of new material options in this field. Results from these extensive tests reveal the need for continued research in white pigments and positive results in transparent and luminescent backsheet options.

14 SOLAR ENERGY↗
NASA NTRS1988

Single-Layer, Multicolor Electroluminescent Phosphors

Etching eliminated in producing phosphor layers for displays. New process enables production of single-layer, two-color phosphor layer without etching. Method of construction, beginning with glass substrate with electrode and insulator layers, involves deposition of green phosphor masking with metal mask or photoresist; diffusion or ion implantation of manganese through mask to produce red phosphor and removal of mask.

Robertson, James B.↗
DOE OSTI2014

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 10{sup 7 }A/cm{sup 2} has been obtained for SLG (1 × 2.5 μm{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Terahertz induced transparency in single-layer graphene

We show that the transmission of a terahertz (THz) pulse through single-layer graphene is strongly nonlinear. As the peak electric field of the THz pulse exceeds 50 kV/cm, the graphene becomes increasingly transparent to the THz radiation. When field strength reaches 800 kV/cm, the increased transparency corresponds to a two-fold decrease in the time-average sheet conductivity of the graphene (time averaged over the duration of the pulse). Time-resolved measurements reveal that the leading portion of the pulse creates transparency for the trailing portion, with a 10-fold suppression in sheet conductivity at the tail of the strongest THz pulse. Comparing the THz-induced transparency phenomena in different sample geometries shows that substrate-free graphene is the best geometry for maximizing the nonlinear transparency effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi{sub 2}Te{sub 3} layered single crystals

The temperature dependences of the resistivity in the directions parallel and perpendicular to the layer plane in the range of temperatures T = 5–300 K and the Hall and transverse magnetoresistance effects (magnetic fields <80 kOe, T = 5 K) are studied for doped and undoped Bi{sub 2}Te{sub 3} layered single crystals. It is shown that, upon the doping of Bi{sub 2}Te{sub 3} crystals with atoms of rare-earth elements (Eu, Tb, Dy), the resistivity in the directions parallel and perpendicular to the layer plane in Bi{sub 2}Te{sub 3} increases. The increase in the resistivity is caused mainly by a decrease in the charge-carrier mobility because of an increased contribution of charge-carrier scattering at defects to scattering processes. The charge-carrier concentrations and mobilities as well as the Hall factor defined by the anisotropy of the effective masses and by the orientation of ellipsoids with respect to the crystallographic axes are estimated.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Work function engineering of single layer graphene by irradiation-induced defects

We report the tuning of electrical properties of single layer graphene by α-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Temperature-dependent mechanical properties of single-layer molybdenum disulphide: Molecular dynamics nanoindentation simulations

The temperature-dependent mechanical properties of single-layer molybdenum disulphide (MoS{sub 2}) are obtained using molecular dynamics (MD) nanoindentation simulations. The Young's moduli, maximum load stress, and maximum loading strain decrease with increasing temperature from 4.2 K to 500 K. The obtained Young's moduli are in good agreement with those using our MD uniaxial tension simulations and the available experimental results. The tendency of maximum loading strain with different temperature is opposite with that of metal materials due to the short range Stillinger-Weber potentials in MoS{sub 2}. Furthermore, the indenter tip radius and fitting strain effect on the mechanical properties are also discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells

The time-resolved photoluminescence of a Bragg structure formed by InAs single-layer quantum wells in a GaAs matrix is investigated experimentally. The comparison of photoluminescence spectra recorded from the edge and the surface of the sample indicates that Bragg ordering of the quantum wells leads to substantial modification of the spectra, in particular, to the appearance of additional modes. The spectrum recorded at the edge of the sample features a single line corresponding to the exciton ground state. In the spectrum recorded at the surface, an additional line whose frequency and propagation angle correspond to the Bragg condition for quantum wells, appears at high excitation levels. The calculation of the modal Purcell factor explains the fact that spontaneous emission is enhanced only for specific propagation angles and frequencies, rather than for all angles and frequencies satisfying the Bragg condition.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Exploring few and single layer CrPS 4 with near-field infrared spectroscopy

Abstract We combine synchrotron-based near-field infrared spectroscopy and first principles lattice dynamics calculations to explore the vibrational response of CrPS 4 in bulk, few-, and single-layer form. Analysis of the mode pattern reveals a C 2 polar + chiral space group, no symmetry crossover as a function of layer number, and a series of non-monotonic frequency shifts in which modes with significant intralayer character harden on approach to the ultra-thin limit whereas those containing interlayer motion or more complicated displacement patterns soften and show inflection points or steps. This is different from MnPS 3 where phonons shift as 1/size 2 and are sensitive to the three-fold rotation about the metal center that drives the symmetry crossover. We discuss these differences as well as implications for properties such as electric polarization in terms of presence or absence of the P–P dimer and other aspects of local structure, sheet density, and size of the van der Waals gap.

36 MATERIALS SCIENCE↗
NASA NTRS2008

Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one monolayer of the target material.

Bronikowski, Michael↗
DOE OSTI2019

Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer

In this paper, we study the transport and recombination mechanisms of charge carriers in a single layer PLED device based on PFO as emitting layer with considering Gaussian disorder, exponential distribution of traps, Poole–Frankel type field dependent hopping mobility and field independent effective transport hopping energy models. For this purpose, we use the one-dimensional and time-independent drift–diffusion model for simulation of electrical and optical characteristics of the PFO based PLED devices such as current density–luminance–voltage (J–L–V), recombination rate and singlet exciton density profile in steady-state and room temperature conditions. Also, we study the influence of the characteristic temperature and density of electron traps on the performance of devices at different voltages. Another topic is analyzing the current density–voltage characteristics of uni-polar devices (hole only or electron only) by using the well known expressions for trap-limited current and space charge-limited current and comparing them with simulation results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Role of electron-electron scattering on spin transport in single layer graphene

In this work, the effect of electron-electron scattering on spin transport in single layer graphene is studied using semi-classical Monte Carlo simulation. The D’yakonov-P’erel mechanism is considered for spin relaxation. It is found that electron-electron scattering causes spin relaxation length to decrease by 35% at 300 K. The reason for this decrease in spin relaxation length is that the ensemble spin is modified upon an e-e collision and also e-e scattering rate is greater than phonon scattering rate at room temperature, which causes change in spin relaxation profile due to electron-electron scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Mode dependent lattice thermal conductivity of single layer graphene

Molecular dynamics simulation is performed to extract the phonon dispersion and phonon lifetime of single layer graphene. The mode dependent thermal conductivity is calculated from the phonon kinetic theory. The predicted thermal conductivity at room temperature exhibits important quantum effects due to the high Debye temperature of graphene. But the quantum effects are reduced significantly when the simulated temperature is as high as 1000 K. Our calculations show that out-of-plane modes contribute about 41.1% to the total thermal conductivity at room temperature. The relative contribution of out-of-plane modes has a little decrease with the increase of temperature. Contact with substrate can reduce both the total thermal conductivity of graphene and the relative contribution of out-of-plane modes, in agreement with previous experiments and theories. Increasing the coupling strength between graphene and substrate can further reduce the relative contribution of out-of-plane modes. The present investigations also show that the relative contribution of different mode phonons is not sensitive to the grain size of graphene. The obtained phonon relaxation time provides useful insight for understanding the phonon mean free path and the size effects in graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Femtosecond laser fabrication of micro and nano-disks in single layer graphene using vortex Bessel beams

We report the fabrication of micro and nano-disks in single layer chemical vapor deposition graphene on glass substrate using femtosecond laser ablation with vortex Bessel beams. The fabricated graphene disks with diameters ranging from 650 nm to 4 μm were characterized by spatially resolved micro-Raman spectroscopy. The variation of ablation threshold was investigated as a function of the number of pulses showing an incubation effect. A very high degree of size control of the fabricated graphene disks is enabled using a sequence of femtosecond pulses with different vortex orders.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Large theoretical thermoelectric power factor of suspended single-layer MoS{sub 2}

We have calculated the semi-classical thermoelectric power factor of suspended single-layer (SL)- MoS{sub 2} utilizing electron relaxation times derived from ab initio calculations. Measurements of the thermoelectric power factor of SL-MoS{sub 2} on substrates reveal poor power factors. In contrast, we find the thermoelectric power factor of suspended SL-MoS{sub 2} to peak at ∼2.8 × 10{sup 4} μW/m K{sup 2} at 300 K, at an electron concentration of 10{sup 12} cm{sup −2}. This figure is higher than that in bulk Bi{sub 2}Te{sub 3}, for example. Given its relatively high thermal conductivity, suspended SL-MoS{sub 2} may hold promise for in-plane thin-film Peltier coolers, provided reasonable mobilities can be realized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementations of exchange bias in magnetic tunnel junctions employ pristine interfaces between antiferromagnetic and ferromagnetic layers. Here we reveal an interfacial exchange bias introduced by a single-step, low-energy ion implantation process in a single layer FeRh thin film. Both 1 keV He + ions and 5 keV Fe + were investigated, their energy selected to ensure the ions would stop within the FeRh film. The ions reduce the metamagnetic transition temperature through defect generation to form a surface layer with ferromagnetic ordering. Temperature dependent magnetism measurements reveal a room temperature exchange bias between the ferromagnetic surface and the antiferromagnetic bulk of ~41 Oe in 5 keV Fe + implanted samples and ~36 Oe for 1 keV He + implanted samples. We directly scrutinize this exchange bias effect in magnetic depth profiles obtained by polarized neutron reflectometry which clearly show a pinned ferromagnetic layer adjacent to the disordered layer created by low energy Fe + ion implantation. These results reveal a novel method to implement exchange bias in an antiferromagnetic layer that can have direct application in the field of spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗