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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Growing Gallium Arsenide On Silicon

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Radhakrishnan, Gouri↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1975

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗
NASA NTRS1995

Reactively Deposited Aluminum Oxide and Fluoropolymer Filled Aluminum Oxide Protective Coatings for Polymers

Reactive ion beam sputter deposition of aluminum simultaneous with low energy arrival of oxygen ions at the deposition surface enables the formation of highly transparent aluminum oxide films. Thick (12 200 A), adherent, low stress, reactively deposited aluminum oxide films were found to provide some abrasion resistance to polycarbonate substrates. The reactively deposited aluminum oxide films are also slightly more hydrophobic and more transmitting in the UV than aluminum oxide deposited from an aluminum oxide target. Simultaneous reactive sputter deposition of aluminum along with polytetrafluoroethylene (PTFE Teflon) produces fluoropolymer-filled aluminum oxide films which are lower in stress, about the same in transmittance, but more wetting than reactively deposited aluminum oxide films. Deposition properties, processes and potential applications for these coatings will be discussed.

Rutledge, Sharon K.↗
NASA NTRS2011

Thermal Energy for Lunar In Situ Resource Utilization: Technical Challenges and Technology Opportunities

Oxygen production from lunar raw materials is critical for sustaining a manned lunar base but is very power intensive. Solar concentrators are a well-developed technology for harnessing the Sun s energy to heat regolith to high temperatures (over 1375 K). The high temperature and potential material incompatibilities present numerous technical challenges. This study compares and contrasts different solar concentrator designs that have been developed, such as Cassegrains, offset parabolas, compound parabolic concentrators, and secondary concentrators. Differences between concentrators made from lenses and mirrors, and between rigid and flexible concentrators are also discussed. Possible substrate elements for a rigid mirror concentrator are selected and then compared, using the following (target) criteria: (low) coefficient of thermal expansion, (high) modulus of elasticity, and (low) density. Several potential lunar locations for solar concentrators are compared; environmental and processing-related challenges related to dust and optical surfaces are addressed. This brief technology survey examines various sources of thermal energy that can be utilized for materials processing on the lunar surface. These include heat from nuclear or electric sources and solar concentrators. Options for collecting and transporting thermal energy to processing reactors for each source are examined. Overall system requirements for each thermal source are compared and system limitations, such as maximum achievable temperature are discussed.

Gordon, Pierce E. C.↗
NASA NTRS1974

Preparation of thick molybdenum targets

Thick natural molybdenum deposits on nickel plated copper substrates were prepared by thermal decomposition of molybdenum hexacarbonyl vapors on a heated surface in an inert gas atmosphere. The molybdenum metal atoms are firmly bonded to the substrate atoms, thus providing an excellent thermal contact across the junction. Molybdenum targets thus prepared should be useful for internal bombardment in a cyclotron where thermal energy inputs can exceed 10 kW.

Singh, J. J.↗
NASA NTRS2003

Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Nanostructure

We demonstrate for the first time that the quantum size effect (QSE) plays a competing role along side the classical thermodynamic effect in the shape relaxation of a small metallic island. Together, these effects transforms a lead(Pb) island grown on Si(111) substrate from its initially flattop faceted morphology to a peculiar ring-shape island, a process catalysed by the tip electric field of a scanning tunnelling microscope (STM). We shall show for the first time how QSE affects the relaxation process dynamically. In particular, it leads to a novel strip-flow growth and double-step growth on selective strips of a plateau inside the ring, defined by the substrate steps more than 60?0?3 below. It appears that atoms diffusing on the plateau can clearly (sub i)(deg)sense(sub i)+/- the quantized energy states inside the island and have preferentially attached to regions that further reduces the surface energy as a result of the QSE, limiting its own growth and stabilizing the ring shape. The mechanism proposed here offers a sound explanation for ring shape metal and semiconductor islands observed in other systems as well.

Chen, Dongmin↗
NASA NTRS1988

Simulation of GaAs cluster formation on GaAs(00-1), AlAs(00-1), Si(001), and As1/Si(001) surfaces

Recently developed semiempirical potential energy functions for the Ga-As-Si and Ga-As-Al systems have been applied here to determine the excess formation energy for GaAs clusters on GaAs(00-1), AlAs(00-1), Si(001), and one atomic layer As-covered Si(001) substrates as a function of cluster size and cluster shape by the Monte Carlo technique. Pyramidal type ledges on the GaAs clusters are found to be the favored ledge for the first three layers while an inverted-pyramidal type ledge is also favored in certain cases for the As1/Si(001) substrate. Cluster formation at ledges is compared with cluster formation on a flat terrace for the Si(001) and the As1/Si(001) substrates.

Choi, D. K.↗
NASA NTRS1989

Photosensor with enhanced quantum efficiency

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Janesick, James R.↗
NASA NTRS2022

Simulating the Diffusion of Hydrogen in Amorphous Silicates: A ‘Jumping’ Migration Process and its Implications for Solar Wind Implanted Lunar Volatiles

We use molecular dynamics (MD) simulations to better explain the movement of atomic hydrogen in amorphous silica and quantify the planetary science implications of these findings. Previous MD simulations had a large range of predicted values and did not agree well with experiment. Our simulations sample atomic motion for a longer duration and consider a wider range of temperatures than previous simulations. In contrast to constant atomic motion, the hydrogen atoms were shown to undergo random intermittent jumps from one oxygen atom to another, the number of which increase with temperature. Predicted diffusion coefficients had a better agreement to experimental values than previous MD simulations, suggesting the importance of longer simulation durations for better statistics. The low activation energy and jumps observed at lunar temperatures do not support the theory of diurnal variations in OH content for an undamaged amorphous silica surface. Instead, we conclude that energetic solar wind impacts can induce two competing atomic hydrogen motion processes in the exposed surface: A prompt effect that induces jumps in the temperature spike volume, but also a long term effect of damage in the structure that traps atomic hydrogen. We then use SDTrimSP to quantify the damage created during exposure and MD to demonstrate the H retention and trapping near these defects. Damage was shown to be dependent on impact energy, with defects easily retaining implanted hydrogen. MD results like those presented herein on unweathered surfaces are therefore most relevant to magnetic anomalies. As a result, we demonstrate the importance of lunar volatile models to account for the damage state of the substrate when modelling hydrogen diffusion, retention, and subsequent OH/water production.

Liam S. Morrissey↗
NASA NTRS1992

Reflection high-energy electron diffraction study of growth and interface formation of the Ga(1-x)In(x)Sb/InAs strained-layer superlattices

Reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy is used to study the growth and interface formation of the Ga(1-x)In(x)Sb/InAs (x is not greater than 0.4) strained-layer superlattices (SLSs) on GaSb(100) substrates. A number of surface atomic structures were observed in the growth of the SLS: a (1 x 3) phase from the InAs epilayer surface, a (2 x 3) phase, a (2 x 4) phase, and diffuse (1 x 1)-like phases from the InAs epilayer surface. It is suggested that the long-range order quality of the interface of Ga(1-x)In(x)Sb on InAs may be better than that of the interface of InAs on Ga(1-x)In(x)Sb, but the abruptness of the interfaces would still be compatible. The RHEED intensity variations in the formation of the interfaces are discussed in terms of interface chemical reactions.

Fan, W. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗
NASA NTRS2003

Electron- and Photon-stimulated Desorption of Alkali Atoms from Lunar Sample and a Model Mineral Surface

We report recent results on an investigation of source mechanisms for the origin of alkali atoms in the tenuous planetary atmospheres, with focus on non-thermal processes (photon stimulated desorption (PSD), electron stimulated desorption (ESD), and ion sputtering). Whereas alkaline earth oxides (MgO, CaO) are far more abundant in lunar samples than alkali oxides (Na2O, K2O), the atmosphere of the Moon contains easily measurable concentrations of Na and K, while Ca and Mg are undetected there; traces of Ca have recently been seen in the Moon's atmosphere (10-3 of Na). The experiments have included ESD, PSD and ion sputtering of alkali atoms from model mineral surface (amorphous SiO2) and from a lunar basalt sample obtained from NASA. The comparison is made between ESD and PSD efficiency of monovalent alkalis (Na, K) and divalent alkaline earths (Ba, Ca).The ultrahigh vacuum measurement scheme for ESD and PSD of Na atoms includes a highly sensitive alkali metal detector based on surface ionization, and a time-of-flight technique. For PSD measurements, a mercury arc light source (filtered and chopped) is used. We find that bombardment of the alkali covered surfaces by ultraviolet photons or by low energy electrons (E>4 eV) causes desorption of hot alkali atoms. This results are consistent with the model developed to explain our previous measurements of sodium desorption from a silica surface and from water ice: electron- or photon-induced charge transfer from the substrate to the ionic adsorbate causes formation of a neutral alkali atom in a repulsive configuration, from which desorption occurs. The two-electron charge transfer to cause desorption of divalent alkaline eath ions is a less likely process.The data support the suggestion that PSD by UV solar photons is a dominant source process for alkalis in the tenuous lunar atmosphere.

Yakshinskiy, B. V.↗
NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗
NASA NTRS1982

The effect of grooves in amorphous substrates on the orientation of metal deposits. I - Carbon substrates

The graphoepitaxial alignment of vapor-deposited discrete metal crystallites is investigated in the nucleation and growth stages and during annealing by in situ UHV/TEM techniques. Various stages of nucleation, growth and coalescence of vapor deposits of Au, Ag, Pb, Sn, and Bi on amorphous, topographically structured C substrates are analyzed by advanced dark-field techniques to detect preferred local orientations. It is found that the topography-induced orientation of metal crystallites depends strongly on their mobility and their respective tendency to develop pronounced crystallographic shapes. Lowering of the average surface free energies and increasing the crystallographic surface energy anisotropies cause generally improved graphoepitaxial alignments.

Anton, R.↗
NASA NTRS1992

Morphological instability of a thermophoretically growing deposit

The stability of the planar interface of a structureless solid growing from a depositing component dilute in a carrier fluid is studied when the main solute transport mechanism is thermal (Soret) diffusion. A linear stability analysis, carried out in the limit of low growth Peclet number, leads to a dispersion relation which shows that the planar front is unstable either when the thermal diffusion factor of the condensing component is positive and the latent heat release is small or when the thermal diffusion factor is negative and the solid grows over a thermally-insulating substrate. Furthermore, the influence of interfacial energy effects and constitutional supersaturation in the vicinity of the moving interface is analyzed in the limit of very small Schmidt numbers (small solute Fickian diffusion). The analysis is relevant to physical vapor deposition of very massive species on cold surfaces, as in recent experiments of organic solid film growth under microgravity conditions.

Castillo, Jose L.↗
NASA NTRS2022

Solar Wind Ion Sputtering of Sodium from Silicates Using Molecular Dynamics Calculations of Surface Binding Energies

For nearly 40 yr, studies of exosphere formation on airless bodies have been hindered by uncertainties in our understanding of the underlying ion collisional sputtering by the solar wind (SW). These ion impacts on airless bodies play an important role in altering their surface properties and surrounding environment. Much of the collisional sputtering data needed for exosphere studies come from binary collision approximation (BCA) sputtering models. These depend on the surface binding energy (SBE) for the atoms sputtered from the impacted material. However, the SBE is not reliably known for many materials important for planetary science, such as plagioclase feldspars and sodium pyroxenes. BCA models typically approximate the SBE using the cohesive energy for a monoelemental solid. We use molecular dynamics (MD) to provide the first accurate SBE data we are aware of for Na sputtered from the above silicate minerals, which are expected to be important for exospheric formation at Mercury and the Moon. The MD SBE values are ∼8 times larger than the Na monoelemental cohesive energy. This has a significant effect on the predicted SW ion sputtering yield and energy distribution of Na and the formation of the corresponding Na exosphere. We also find that the SBE is correlated with the coordination number of the Na atoms within the substrate and with the cohesive energy of the Na-bearing silicate. Our MD SBE results will enable more accurate BCA predictions for the SW ion sputtering contribution to the Na exosphere of Mercury and the Moon.

Lunar surface↗
NASA NTRS1989

Low energy sputtering of cobalt by cesium ions

An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

Handoo, A.↗