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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Interannual Variability of the Tropical Energy Balance: Reconciling Observations and Models

Since the beginning of the World Climate Research Program's Global Precipitation Climatology Project (GPCP) satellite remote sensing of precipitation has made dramatic improvements, particularly for tropical regions. Data from microwave and infrared sensors now form the most critical input to precipitation data sets and can be calibrated with surface gauges to so that the strengths of each data source can be maximized in some statistically optimal sense. Recent availability of the TRMM (Tropical Rainfall Measuring Mission) has further aided in narrowing uncertainties in rainfall over the tropics and subtropics. Although climate modeling efforts have long relied on space-based precipitation estimates for validation, we now are in a position to make more quantitative assessments of model performance, particularly in tropical regions. An integration of the CCM3 using observed SSTs as a lower boundary condition is used to examine how well this model responds to ENSO forcing in terms of anomalous precipitation. An integration of the NCEP spectral model used for the Reanalysis-11 effort is also examined. This integration is run with specified SSTs, but no data assimilation. Our analysis focuses on two aspects. First are the spatial anomalies that are indicative of dislocations in Hadley and Walker circulations. Second, we consider the ability of models to replicate observed increases in oceanic precipitation that are noted in satellite observations for large ENSO events. Finally, we consider a slab ocean version of the CCM3 model with prescribed ocean heat transports that mimic upwelling anomalies, but which still allows the surface energy balance to be predicted. This less restrictive experiment is used to understand why model experiments with specified SSTs seem to have noticeably less interannual variability than do the satellite precipitation observations.

Robertson, Franklin R.↗
NASA NTRS1996

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗
NASA NTRS2001

Interannual Variability of Tropical Precipitation: How Well Do Climate Models Agree With Current Satellite Estimates?

Since the beginning of the World Climate Research Program's Global Precipitation Climatology Project (GPCP) satellite remote sensing of precipitation has made dramatic improvements, particularly for tropical regions. Data from microwave and infrared sensors now form the most critical input to precipitation data sets and can be calibrated with surface gauges to so that the strengths of each data source can be maximized in some statistically optimal sense. Recent availability of the TRMM (Tropical Rainfall Measuring Mission) has further aided in narrowing uncertainties in rainfall over die tropics and subtropics. Although climate modeling efforts have long relied on space-based precipitation estimates for validation, we now are in a position to make more quantitative assessments of model performance, particularly in tropical regions. An integration of the CCM3 using observed SSTs as a lower boundary condition is used to examine how well this model responds to ENSO forcing in terms of anomalous precipitation. An integration of the NCEP spectral model used for the Reanalysis-H effort is also examined. This integration is run with specified SSTs, but with no data assimilation. Our analysis focuses on two aspects of inter-annual variability. First are the spatial anomalies that are indicative of dislocations in Hadley and Walker circulations. Second, we consider the ability of models to replicate observed increases in oceanic precipitation that are noted in satellite observations for large ENSO events. Finally, we consider a slab ocean version of the CCM3 model with prescribed ocean beat transports that mimic upwelling anomalies, but which still allows the surface energy balance to be predicted. This less restrictive experiment is used to understand why model experiments with specified SSTs seem to have noticeably less interannual variability in precipitation than do the satellite observations.

Robertson, Franklin R.↗
NASA NTRS2002

The 1999 Hector Mine Earthquake, Southern California: Vector Near-Field Displacements from ERS InSAR

Two components of fault slip are uniquely determined from two line-of-sight (LOS) radar interferograms by assuming that the fault-normal component of displacement is zero. We use this approach with ascending and descending interferograms from the ERS satellites to estimate surface slip along the Hector Mine earthquake rupture. The LOS displacement is determined by visually counting fringes to within 1 km of the outboard ruptures. These LOS estimates and uncertainties are then transformed into strike- and dip-slip estimates and uncertainties; the transformation is singular for a N-S oriented fault and optimal for an E-W oriented fault. In contrast to our previous strike-slip estimates, which were based only on a descending interferogram, we now find good agreement with the geological measurements, except at the ends of the rupture. The ascending interferogram reveals significant west-sidedown dip-slip (approximately 1.0 m) which reduces the strike-slip estimates by 1 to 2 m, especially along the northern half of the rupture. A spike in the strike-slip displacement of 6 m is observed in central part of the rupture. This large offset is confirmed by subpixel cross correlation of features in the before and after amplitude images. In addition to strike slip and dip slip, we identify uplift and subsidence along the fault, related to the restraining and releasing bends in the fault trace, respectively. Our main conclusion is that at least two look directions are required for accurate estimates of surface slip even along a pure strike-slip fault. Models and results based only on a single look direction could have major errors. Our new estimates of strike slip and dip slip along the rupture provide a boundary condition for dislocation modeling. A simple model, which has uniform slip to a depth of 12 km, shows good agreement with the observed ascending and descending interferograms.

Sandwell, David T.↗
NASA NTRS1975

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Heinemann, K.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

Meier, D. L.↗
NASA NTRS1994

Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

Welser, R. E.↗
NASA NTRS1994

Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.

Welser, R. E.↗
NASA NTRS1989

The effects of surface films on mechanical behavior of B2 ordered intermetallic alloys

Surface films deposited on body-centered cubic metals can greatly reduce the yield and flow stresses and increase the ductility at low homologous temperatures. This softening process is associated with the ability of the film-substrate interface to generate large populations of mobile edge dislocations. This phenomenon is extended to B2 ordered intermetallic alloys, which display many deformation characteristics of bcc metals. Single crystal NiAl coated with thermally formed oxide films and polycrystalline FeAl with electrochemically formed Fe-Al-O films display film softening at and below room temperature. The extent of film softening is shown to depend on many factors, including crystal orientation, deformation temperature, operative slip systems, film thickness, film adherence, and film and substrate properties.

Noebe, R. D.↗
NASA NTRS2002

Growth of Defect-Free 3C-Sic on 4H- and 6H-SIC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3C-SiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (Delta/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗
NASA NTRS1991

GPS measurements of deformation associated with the 1987 Superstition Hills earthquake: Evidence for conjugate faulting

Large station displacements observed from Imperial Valley Global Positioning System (GPS) campaigns are attributed to the November 24, 1987 Superstition Hills earthquake sequence. Thirty sites from a 42 station GPS network established in 1986 were reoccupied during 1988 and/or 1990. Displacements at three sites within 3 kilometers of the surface rupture approach 0.5 m. Eight additional stations within 20 km of the seismic zone are displaced at least 10 cm. This is the first occurrence of a large earthquake (M(sub S) 6.6) within a preexisting GPS network. Best-fitting uniform slip models of rectangular dislocations in an elastic half-space indicate 130 + or - 8 cm right-lateral displacement along the northwest-trending Superstition Hills fault and 30 + or - 10 cm left-lateral displacement along the conjugate northeast-trending Elmore Ranch fault. The geodetic moments are 9.4 x 10(exp 25) dyne-cm and 2.3 x 10(exp 25) dyne-cm for the Superstition Hills and Elmore Ranch faults, respectively, consistent with teleseismic source parameters. The data also suggest the post seismic slip along the Superstition Hills fault is concentrated at shallow depths. Distributed slip solutions using Singular Value Decomposition indicate near uniform displacement along the Elmore Ranch fault and concentrated slip to the northwest and southeast along the Superstition Hills fault. A significant component of non-seismic displacement is observed across the Imperial Valley, which is attributed in part to interseismic plate-boundary deformation.

Larsen, Shawn↗
NASA NTRS1992

Global positioning system measurements of deformations associated with the 1987 Superstition Hills earthquake - Evidence for conjugate faulting

Large station displacements observed from Imperial Valley Global Positioning System (GPS) compaigns are attributed to the November 24, 1987 Superstition Hills earthquake sequence. Thirty sites from a 42 station GPS network established in 1986 were reoccupied during 1988 and/or 1990. Displacements at three sites within 3 kilometers of the surface rupture approach 0.5 m. Eight additional stations within 20 km of the seismic zone are displaced at least 10 cm. This is the first occurrence of a large earthquake (M(sub S) 6.6) within a preexisting GPS network. Best-fitting uniform slip models of rectangular dislocations in an elastic half-space indicate 130 + or - 8 cm right-lateral displacement along the northwest-trending Superstition Hills fault and 30 + or - 10 cm left-lateral displacement along the conjugate northeast-trending Elmore Ranch fault. The geodetic moments are 9.4 x 10 (exp 25) dyne-cm and 2.3 x 10 (exp 25) dyne-cm for the Superstition Hills and Elmore Ranch faults, respectively, consistent with teleseismic source parameters. The data also suggest the post seismic slip along the Superstition Hills fault is concentrated at shallow depths. Distributed slip solutions using Singular Value Decomposition indicate near uniform displacement along the Elmore Ranch fault and concentrated slip to the northwest and southeast along the Superstition Hills fault. A significant component of non-seismic displacement is observed across the Imperial Valley, which is attributed in part to interseismic plate-boundary deformation.

Larsen, Shawn↗
NASA NTRS2001

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3CSiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (delta a/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗
NASA NTRS1993

Rheology of water and ammonia-water ices

Creep experiments on fine-grained water and ammonia-water ices have been performed at one atmosphere and high confining pressure in order to develop constitutive relationships necessary to model tectonic processes and interpret surface features of icy moons of the outer solar system. The present series of experiments explores the effects of temperature, strain rate, grain size, and melt fraction on creep strength. In general, creep strength decreases with increasing temperature, decreasing strain rate, and increasing melt fraction. A transition from dislocation creep to diffusion creep occurs at finer grain sizes, higher temperatures, and lower strain rates.

Goldsby, D. L.↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗
NASA NTRS1984

Modeling of the surface static displacements and fault plane slip for the 1979 Imperial Valley earthquake

Three-dimensional finite element modeling techniques are used to synthesize geodetic and seismological results for 1979 Imperial Valley earthquake. The strategy pursued consists of two principal steps. In the first step, the seismologically-derived coseismic fault slip is taken as a function of position in the fault plane and is applied directly to the three-dimensional dislocation model. In the second step, a physical model of stresses and constitutive parameters is perturbed so as to reproduce the observed fault slip. Hence, the principal features of the coseismic slip pattern are explained by a stress-driven fault model in which: (1) a spatially unresolved asperity is found equivalent to a stress drop of 18 MPa averaged over an area of 15 sq km, and (2) driving stress is essentially absent on the fault segment overlapping the 1940 earthquake rupture zone.

Slade, M. A.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRS2011

Collisional Processing of Comet Surfaces: Impact Experiments into Olivine

A new paradigm has emerged where 3.9 Ga ago, a violent reshuffling reshaped the placement of small bodies in the solar system (the Nice model). Surface properties of these objects may have been affected by collisions caused by this event, and by collisions with other small bodies since their emplacement. In addition, objects in the Kuiper Belt are believed to undergo extensive collisional processing while in the Kuiper Belt. Physical manifestations of shock effects (e.g., planar dislocations) in minerals typically found in comets will be correlated with spectral changes (e.g. reddening, loss and shift of peaks, new signatures) to allow astronomers to better understand geophysical impact processing that has occurred on small bodies. Targets will include solid and granular olivine (forsterite), impacted over a range of impact speeds with the Experimental Impact Laboratory at NASA JSC. Analyses include quantification of the dependence of the spectral changes with respect to impact speed, texture of the target, and temperature.

Lederer, S. M.↗