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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Functionalized Polymer Thin Films for Plutonium Capture and Isotopic Screening from Aqueous Sources

The rapid screening of plutonium from aqueous sources remains a critical challenge for nuclear nonproliferation efforts. The determination of trace-level Pu isotopes in water requires offsite sample preparation and analysis; therefore, new methods that combine plutonium purification, concentration, and isotopic screening in a fieldable detection system will provide an invaluable tool for nuclear safeguards. This contribution describes the development and characterization of thin polymer-ligand films for the isolation and concentration of waterborne Pu for direct spectroscopic analyses. Submicron thin films were prepared through spin coating onto Si wafers and consisted of combinations of polystyrene (PS) with dibenzoylmethane, thenoyltrifluoroacetone, and di(2-ethylhexyl)phosphoric acid (HDEHP). Pu uptake studies from solutions at pH from 2.3 to 6.3 indicated that only films containing HDEHP exhibited significant recovery of Pu. High alpha spectroscopy peak energy resolutions were achieved for PS-HDEHP films over a range of film thicknesses from 30 to 250 nm. Furthermore, a separate study was performed to evaluate uptake from a primarily Pu(V) solution where it was observed that doubling the HDEHP loading in the film increased uptake of Pu by an order of magnitude. X-ray photoelectron spectroscopy (XPS) analysis revealed that HDEHP was highly concentrated within the first few nanometers of the film at the higher loading. XPS analysis also revealed that, in the presence of water, HDEHP was stripped from the surface layer of the film at circumneutral pH. While significant losses of ligand were seen in all samples, higher loadings of HDEHP resulted in measurable amounts of ligand retained after a 12-h soak in water. Findings of this study are being used to guide the development of thin-film composite membrane-based detection methods for the rapid, fieldable analysis of Pu in water.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Grid-assisted magnetron sputtering deposition of nitrogen graded TiN thin films

Titanium Nitride (TiN) films were obtained using the grid-assisted magnetron sputtering deposition technique on Al substrates in two conditions: under constant and variable nitrogen concentration along the thin solid film thickness. The formation of a film with variable N concentration (herein referred as graded film) was confirmed using energy filtered transmission electron microscopy, X-ray photoelectron spectroscopy and grazing incidence X-ray diffraction. The TiN thin films microstructures were also analysed using scanning and transmission electron microscopies (SEM and TEM). Finally, the viability of synthesizing TiN thin films with variable N concentration is herein proposed as an alternative method for tailoring the properties of such functional coating materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO 3

Strontium titanate (STO), with a wide spectrum of emergent properties such as ferroelectricity and superconductivity, has received significant attention in the community of strongly correlated materials. In the strain-free STO film grown on the SrRuO 3 buffer layer, the existing polar nanoregions can facilitate room-temperature ferroelectricity when the STO film thickness approaches 10 nm. Here we show that around this thickness scale, the freestanding STO films without the influence of a substrate show the tetragonal structure at room temperature, contrasting with the cubic structure seen in bulk form. Further, the spectroscopic measurements reveal the modified Ti-O orbital hybridization that causes the Ti ion to deviate from its nominal 4+ valency (3d o configuration) with excess delocalized 3d electrons. Additionally, the Ti ion in TiO 6 octahedron exhibits an off-center displacement. The inherent symmetry lowering in ultrathin freestanding films offers an alternative way to achieve tunable electronic structures that are of paramount importance for future technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, in this study, we find an unusual reduction of resistivity with decreasing film thickness in niobium phosphide (NbP) semimetal deposited at relatively low temperatures of 400°C. In films thinner than 5 nanometers, the room temperature resistivity (~34 microhm centimeters for 1.5-nanometer-thick NbP) is up to six times lower than the resistivity of our bulk NbP films, and lower than conventional metals at similar thickness (typically about 100 microhm centimeters). The NbP films are not crystalline but display local nanocrystalline, short-range order within an amorphous matrix. Our analysis suggests that the lower effective resistivity is caused by conduction through surface channels, together with high surface carrier density and sufficiently good mobility as the film thickness is reduced. These results and the fundamental insights obtained here could enable ultrathin, low-resistivity wires for nanoelectronics beyond the limitations of conventional metals.

42 ENGINEERING↗
DOE OSTI2020

Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Electrolyte-based transistors utilizing ionic liquids/gels have been highly successful in the study of charge-density-controlled phenomena, particularly in oxides. Experimental probes beyond transport have played a significant role, despite challenges in their application in electric double-layer transistors. Here, we demonstrate the application of synchrotron soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) as operando probes of the charge state and magnetism in ion-gel-gated ferromagnetic perovskite films. Electrochemical response via oxygen vacancies at positive gate bias in LaAlO 3 (001)/La 0.5 Sr 0.5 CoO 3-δ is used as a test case. XAS/XMCD measurements of 4–25 unit-cell-thick films first probe the evolution of hole doping (from the O K-edge pre-peak) and ferromagnetism (at the Co L-edges), to establish a baseline. Operando soft XAS/XMCD of electrolyte-gated films is then demonstrated, using optimized spin-coated gels with a thickness of ~1 μm and a specific composition. The application of gate voltages up to +4 V is shown to dramatically suppress the O K-edge XAS pre-peak intensity and Co L-edge XMCD, thus enabling the Co valence and ferromagnetism to be tracked upon gate-induced reduction. Soft XAS and XMCD, with appropriate electrolyte design, are thus established to be viable for the operando characterization of electrolyte-gated oxides.

Yu, Biqiong↗
DOE OSTI2021

Synthesis of High-Quality Mg-MOF-74 Thin Films via Vapor-Assisted Crystallization

The unique features of metal-organic frameworks (MOFs), such as their large surface areas and diversity of structures, makes them suitable to a broad range of applications. One of the most critical enabling technologies for implementing MOF films is the preparation of dense and continuous films that would maximize the performance of the configurations. While formation of crystalline Mg-MOF-74 thin films presents significant challenges, demonstrating large-scale coatings of the MOF, which exhibits the highest CO2 uptake among MOFs at 1 bar and 25 °C, would be particularly beneficial for CO2- related sensing applications. In this work, we demonstrate for the first time high-quality Mg-MOF-74 films synthesized via a vapor-assisted crystallization (VAC) process. The VAC process described herein produces dense and highly crystalline layers of Mg-MOF-74 with a low coefficient of variation (COV) of film thickness below 7%. We first optimized a precursor solution for the VAC process, and then investigated the effects of synthesis temperature, time and droplet volume on the growth, crystallinity and thickness of Mg-MOF-74 films. The porosity of the film was assessed by measuring the CO2 uptake at room temperature and 1 bar. The obtained Mg-MOF-74 films possess a well-defined microporosity, as deduced from CO2 adsorption studies via quartz crystal microbalance (QCM) and comparison with bulk Mg MOF-74 reference data. Furthermore, CO2 cyclic adsorption-desorption experiments on the Mg-MOF-74

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Magnetoresistance effects in cadmium arsenide thin films

In-plane magnetoresistance effects in the three-dimensional Dirac semimetal cadmium arsenide are studied as a function of film growth orientation, film thickness and surface Fermi level. For films with the Fermi level near the bulk nodes, which are gapped for very thin films, a pronounced planar Hall effect is observed due to the combination of magnetoresistance effects from the Berry phase and orbital magnetoresistance. At high Fermi levels, surface state transport produces weaker magnetoresistance effects. Furthermore, the results are discussed in the context of detecting signatures of the chiral anomaly.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2020

Mesoscopic structure of mixed type domain walls in multiaxial ferroelectrics

The structure of a 180° uncharged rotational domain wall in a multiaxial ferroelectric film is studied in the framework of an analytical Landau-Ginzburg-Devonshire (LGD) approach. Finite element modeling (FEM) is used to solve numerically the system of the coupled nonlinear Euler-Lagrange (EL) second-order differential equations for two components of polarization. We show that the structure of the domain wall and corresponding metastable or stable phase of the film are controlled by a single parameter—the dimensionless ferroelectric anisotropy factor μ. We fitted the static profile of a solitary domain wall, calculated by FEM, with kinklike functions for polarization components, and extracted the five μ-dependent parameters from the fitting to FEM curves. The surprisingly high accuracy of the fitting results for two polarization components in the entire μ range allows us to conclude that the analytical functions, which are trial functions in the direct variational method, can be treated as a high-accuracy variational solution of the static EL equations. We further derive exact two-component analytical solutions of the static EL equations for a polydomain 180° domain structure in a multiaxial ferroelectric film. Using these, we derive analytical expressions for the system free energy and analyze its dependence on the film thickness and boundary conditions at the film surfaces. The single-domain state is ground for zero polarization derivative at the surfaces, while the polydomain states minimize the system energy for zero polarization at the surfaces. Counterintuitively, the energy of the polydomain states split into two levels, “0” and “1,” for zero polarization at the surfaces, and each of the levels contains a large number of close-energy sublevels, whose structure is characterized by a different number and type of domain walls. The analytical solutions can become a useful tool for Bayesian analysis of high-resolution scanning transmission electron microscopy images in ferroelectric films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantitatively controlled electrophoretic deposition of nanocrystal films from non-aqueous suspensions

This study presents a novel method to correlate the mass and charge transfer kinetics during the electrophoretic deposition of nanocrystal films by using a purpose-built double quartz crystal microbalance combined with simultaneous current-measurement. Our data support a multistep process for film formation: generation of charged nanocrystal flux, charge transfer at the electrode, and polarization of neutral nanocrystals near the electrode surface. The polarized particles are then subject to dielectrophoretic forces that reduce diffusion away from the interface, generating a sufficiently high neutral particle concentration at the interface to form a film. The correlation of mass and charge transfer enables quantification of the nanocrystal charge, the fraction of charged nanocrystals, and the initial sticking coefficient of the particles. These quantities permit calculation of the film thickness, providing a theoretical basis for using concentration and voltage as process parameters to grow films of targeted thicknesses.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiN x ) interlayer was deposited to protect the device surface before performing a low temperature (500 °C) NCD growth process in an attempt to protect the gates on these fully fabricated devices. Notably, atomic force microscopy showed that the maximum lateral grain size exceeded 300 nm even though the film thickness was ∼250 nm. Comparing electrical (DC) performance before and after NCD growth, the gate leakage increased by ∼10 2 after NCD growth. Despite the lower NCD growth temperature, intermixing of the Ni and Au was observed in the Schottky gate metal stack; however, we believe there is another mechanism, possibly hydrogen-related, that is responsible for the measured increase in gate leakage. Regarding thermal management, the device-level thermal resistance (quantified using the average gate temperature rise measured by thermoreflectance imaging) was reduced by 29% through the incorporation of the top-side diamond film. Using time-domain thermoreflectance, the thermal conductivity of the ≈250 nm thick NCD film was measured to be 45 ± 25 W m −1 K −1 . This is expected to be at least 5× greater than the thermal conductivity of the thin disordered AlGaN alloy. There could also be a coupled electrothermal component contributing to the reduced temperature rise from electric field spreading and consequent heat spreading. This study demonstrates a promising first step toward device-level thermal management of high power UWBG Al-rich AlGaN devices.

Lundh, James Spencer [U.S. Naval Research Laborato↗
DOE OSTI2022

Numerical simulation of falling film sensible heat transfer over round horizontal tubes

Numerical simulations are performed to explore the heat transfer characteristics of falling films over horizontal round tubes with uniform heat flux imposed for a range of Reynolds numbers spanning the droplet, jet, and sheet regimes. Simulations results agree well with available experimental measurements. The study analyzes the local as well as average heat transfer behavior under the different flow modes. The numerical results show that the local Nusselt number (Nu) distribution depends on the flow features in each mode and varies substantially in all directions for the respective mode. In the droplet mode, the Nu value varies significantly as the droplet impinges and the remnant liquid-bridge retracts (peak instantaneous Nu near 6), followed by wave propagation over the tube surface with peak Nu around 0.25. For the jet modes, the local maximum in the heat transfer occurs off-center to the impingement location with magnitudes of peak Nu = 3.1 for the inline jet mode and Nu = 2.7 for the staggered jet mode, while on the rest of the tube surface, it has an inverse relation with the liquid film thickness. Substantial variations in the heat transfer value are also recorded in the middle of the two impinging jets with Nu = 0.95 in the inline jet mode where the neighboring jets do not interact, and Nu = 0.60 in the crest region of the staggered jet mode where the neighboring jets interact with each other. In the sheet mode, the Nu was seen to depend on the thickness of the liquid waves traversing over the tube surface. Lower Nu values were recorded beneath the crest location of the liquid waves, which increases (1.4–11.6% depending on circumferential location) abruptly in magnitude at the advancing fronts of the waves. The temperature distribution in the liquid film in each of the modes was examined to evaluate the mechanism of heat transfer process. This study also compares the local heat transfer coefficient distribution with the analytical heat transfer models derived to predict heat transfer performance over horizontal tube surfaces.

42 ENGINEERING↗
DOE OSTI2025

Ligand‐Induced Crystallization Control in MAPbBr 3 Hybrid Perovskites for High Quality Nanostructured Films

AbstractControlling the formation of hybrid perovskite thin films is crucial in obtaining high‐performance optoelectronic devices, since factors like morphology and film thickness have a profound impact on a film's functionality. For light‐emitting applications grain sizes in the sub‐micrometer‐range have previously shown enhanced brightness. It is therefore crucial to develop simple, yet reliable methods to produce such films. Here, a solution‐based synthesis protocol for the on‐substrate formation of MAPbBr3 (MA = methylammonium) nanostructures by adding the bifunctional rac‐3‐aminobutyric acid to the precursor solution is reported. This synthesis route improves key optical properties such as photoluminescence quantum yields and life times of excited states by inducing a controlled slow‐down of the film formation and suppressing agglomeration effects. In situ spectroscopy reveals a delayed and slowed down crystallization process, which achieves synthesis of perovskite structures with much reduced defect densities. Further, aggregation can be controlled by the amount of amino acid added and adjusting the synthesis protocol allows to produce cubic crystallites with targeted size from nanometer to micrometer scales. The nanocrystalline MAPbBr3 samples show enhanced amplified spontaneous emission (ASE) intensities, reduced ASE thresholds and purer ASE signals, compared to pristine films, even under intense optical driving, making them promising structures for lasing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Advances in Nb 3 Sn superconducting radiofrequency cavities towards first practical accelerator applications

Abstract Nb 3 Sn is a promising next-generation material for superconducting radiofrequency cavities, with significant potential for both large scale and compact accelerator applications. However, so far, Nb 3 Sn cavities have been limited to continuous wave accelerating fields <18 MV m −1 . In this paper, new results are presented with significantly higher fields, as high as 24 MV m −1 in single cell cavities. Results are also presented from the first ever Nb 3 Sn-coated 1.3 GHz 9-cell cavity, a full-scale demonstration on the cavity type used in production for the European XFEL and LCLS-II. Results are presented together with heat dissipation curves to emphasize the potential for industrial accelerator applications using cryocooler-based cooling systems. The cavities studied have an atypical shiny visual appearance, and microscopy studies of witness samples reveal significantly reduced surface roughness and smaller film thickness compared to typical Nb 3 Sn films for superconducting cavities. Possible mechanisms for increased maximum field are discussed as well as implications for physics of RF superconductivity in the low coherence length regime. Outlook for continued development is presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Freestanding and Flexible Micrometer-Thick PEDOT:PSS Film with High Power Factor

High-efficiency thermoelectric materials are vital for sustainable energy. This work presents a reliable method to fabricate freestanding, flexible micrometer-thick films of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), achieving a power factor of 204 μW m –1 K –2 , 4 orders of magnitude higher than pristine films. Furthermore, this improvement stems from polymer chain realignment and enhanced charge transport via solvent doping, coupled with PSS reduction during post-treatment, which also strengthens film mechanics. Crucially, the freestanding nature ensures transferability, making them ideal for versatile applications. Besides thermoelectrics, these highly conductive, robust, and flexible PEDOT:PSS films provide attractive solutions for organic solar cells, battery electrodes, and flexible electronics.

Conjugated Polymers↗
DOE OSTI2021

Quantum Size Effects, Multiple Dirac Cones, and Edge States in Ultrathin Bi(110) Films

The presence of inherently strong spin–orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac Fermion states in the odd-bilayer (BL) films, originating from dangling p z orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-T c superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Niobium hydride formation in superconducting qubit thin films

The formation of nonsuperconducting hydrides in 160–170-nm-thick films of niobium is examined. We identify six elastically distinct orientation relationships ɛ−Nb 4 ⁢H 3 takes within the matrix, solid-solution 𝛼−NbH 𝑥 phase. We employ a phase field model to assess the impact of elastic energy induced by the strain of phase transformation on the morphology and transformation dynamics of ɛ precipitates within a thin film. We consider the dimensions of the thin film, crystallographic growth direction, and diffusion rates to predict the timescale of hydride evolution. Leveraging the finite element method, we predict two-dimensional and three-dimensional equilibrium shapes of ɛ-hydrides within a bulk sample and in a thin film that has a traction-free surface. Our results suggest that niobium hydrides migrate to the free surface of the film. Precipitates which reach the free surface coarsen, while precipitates within the film dissolve. Precipitates in both two dimensions and three dimensions experience a repulsive interaction force at the free surface, that is attractive in the bulk, shown in experiment and theory of previous studies.

36 - MATERIALS SCIENCE↗
DOE OSTI2026

Deposition of very thick Mo/Al multilayer films using magnetron sputtering

To understand materials at extreme conditions dynamic ramp compression techniques/experiments are critical, and gradient density impactors (GDIs) have the potential to enable high quality experiments. Very thick (i.e., hundreds of μm thick) multilayer films consisting of high z/low z layers with a gradient in z through the stack can serve as a GDI. Surprisingly while there is a large amount of literature on the topic of multilayer films, there is an absence of literature on very thick multilayer films. A number of multilayer film systems deposited by dc magnetron sputtering were evaluated as potential candidates, including Cu/Al, Ta/Al, and Mo/Al. The Mo/Al multilayer system was observed to be the most promising candidate and is the primary focus of this paper. Mo/Al multilayer films up to ∼400 μm thick with reasonable thickness uniformity were deposited.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗