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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗
NASA NTRS2017

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

total ionizing dose (TID)↗
NASA NTRS1981

Low-energy electron effects on tensile modulus and infrared transmission properties of a polypyromellitimide film

Infrared (IR) spectroscopy and tensile modulus testing were used to evaluate the importance of experimental procedure on changes in properties of pyromellitic dianhydride-p,p prime-oxydianiline film exposed to electron radiation. The radiation exposures were accelerated, approximate equivalents to the total dose expected for a 30 year mission in geosynchronous Earth orbit. The change in the tensile modulus depends more on the dose rate and the time interval between exposure and testing than on total dose. The IR data vary with both total dose and dose rate. A threshold dose rate exists below which reversible radiation effects on the IR spectra occur. Above the threshold dose rate, irreversible effects occur with the appearance of a new band. Post-irradiation and in situ IR absorption bands are significantly different. It is suggested that the electron radiation induced metastable, excites molecular states.

Ferl, J. E.↗
NASA NTRS2020

Total Ionizing Dose Test of Silicon Switching Transistors JANTXV2N2222AUB

Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Campola, M.↗
NASA NTRS2017

Total Ionizing Dose Test of Analog Devices’ AD654 Voltage to Frequency Converter

Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

B. Freeman↗
NASA NTRS2018

Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

Radiation↗
NASA NTRS2017

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.

Bozovich, Amanda↗
NASA NTRS2023

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗
NASA NTRS2011

Total Ionizing Dose Testing of the Analog Devices’ AD648 Dual Precision Operational Amplifier

The Analog Devices (ADI) AD648 was tested for total ionizing dose response at the Goddard Space Flight Center (GSFC) Radiation Effects Facility (REF) beginning 1 June 2011. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Alvin J Boutte↗
NASA NTRS2023

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗