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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Structural basis for severe pain caused by mutations in the S4-S5 linkers of voltage-gated sodium channel Na V 1.7

Gain-of-function mutations in voltage-gated sodium channel Na V 1.7 cause severe inherited pain syndromes, including inherited erythromelalgia (IEM). The structural basis of these disease mutations, however, remains elusive. Here, we focused on three mutations that all substitute threonine residues in the alpha-helical S4-S5 intracellular linker that connects the voltage sensor to the pore: Na V 1.7/I234T, Na V 1.7/I848T, and Na V 1.7/S241T in order of their positions in the amino acid sequence within the S4-S5 linkers. Introduction of these IEM mutations into the ancestral bacterial sodium channel Na V Ab recapitulated the pathogenic gain-of-function of these mutants by inducing a negative shift in the voltage dependence of activation and slowing the kinetics of inactivation. Remarkably, our structural analysis reveals a common mechanism of action among the three mutations, in which the mutant threonine residues create new hydrogen bonds between the S4-S5 linker and the pore-lining S5 or S6 segment in the pore module. Because the S4-S5 linkers couple voltage sensor movements to pore opening, these newly formed hydrogen bonds would stabilize the activated state substantially and thereby promote the 8 to 18 mV negative shift in the voltage dependence of activation that is characteristic of the Na V 1.7 IEM mutants. Our results provide key structural insights into how IEM mutations in the S4-S5 linkers may cause hyperexcitability of Na V 1.7 and lead to severe pain in this debilitating disease.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Radiance-based NIR v as a proxy for GPP of corn and soybean

Substantial uncertainty exists in daily and sub-daily gross primary production (GPP) estimation, which dampens accurate monitoring of the global carbon cycle. Here we find that near-infrared radiance of vegetation (NIR v,Rad ), defined as the product of observed NIR radiance and normalized difference vegetation index (NDVI), can accurately estimate corn and soybean GPP at daily and half-hourly time scales, benchmarked with multi-year tower-based GPP at three sites with different environmental and irrigation conditions. Overall, NIR v,Rad explains 84% and 78% variations of half-hourly GPP for corn and soybean, respectively, outperforming NIR reflectance of vegetation (NIR v,Ref ), enhanced vegetation index (EVI), and far-red solar-induced fluorescence (SIF760). The strong linear relationship between NIR v,Rad and absorbed photosynthetically active radiation by green leaves (APAR green ), and that between APAR green and GPP, explain the good NIR v,Rad -GPP relationship. The NIR v,Rad -GPP relationship is robust and consistent across sites. The scalability and simplicity of NIR v,Rad indicate a great potential to estimate daily or sub-daily GPP from high-resolution and/or long-term satellite remote sensing data.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Wafer-scale remote epitaxy of III-V semiconductors and applications

In conventional epitaxy of single-crystalline semiconductor materials, it is challenging to separate the grown layer with the substrate due to the strong bonding at the interface. Remote epitaxy is a recently discovered method to grow single-crystalline thin films on graphene, wherein the grown film can be exfoliated at the graphene interface to form freestanding membranes. Here, we present our recent development on remote epitaxy of III-V semiconductors. We show that directly growing 2D materials on III-V substrates as a remote epitaxy template is an ideal pathway that can eliminate transfer process-related defects and can realize wafer-scale process of remote epitaxy and substrate reuse. We present the strategies to grow 2D materials on the surface of III-V materials, which is much more challenging than thermally robust substrates such as SiO2/Si or sapphire. The nucleation of III-V on 2D material-coated III-V platforms via remote interaction is investigated both experimentally and theoretically. Lastly, we show advanced remote epitaxial platforms and optoelectronic applications enabled by remote epitaxy, and the capability to recycle the III-V substrates for repeated remote epitaxy and production of freestanding III-V thin films.

Kim, Hyunseok↗
DOE OSTI2021

Wafer-scale remote epitaxy of III-V semiconductors and applications

In conventional epitaxy of single-crystalline semiconductor materials, it is challenging to separate the grown layer with the substrate due to the strong bonding at the interface. Remote epitaxy is a recently discovered method to grow single-crystalline thin films on graphene, wherein the grown film can be exfoliated at the graphene interface to form freestanding membranes. Here, we present our recent development on remote epitaxy of III-V semiconductors. We show that directly growing 2D materials on III-V substrates as a remote epitaxy template is an ideal pathway that can eliminate transfer process-related defects and can realize wafer-scale process of remote epitaxy and substrate reuse. We present the strategies to grow 2D materials on the surface of III-V materials, which is much more challenging than thermally robust substrates such as SiO2/Si or sapphire. The nucleation of III-V on 2D material-coated III-V platforms via remote interaction is investigated both experimentally and theoretically. Lastly, we show advanced remote epitaxial platforms and optoelectronic applications enabled by remote epitaxy, and the capability to recycle the III-V substrates for repeated remote epitaxy and production of freestanding III-V thin films.

Kim, Hyunseok↗
DOE OSTI2026

Discovering novel therapeutic V H Hs for emerging viruses: perspectives from VEEV selection strategies

Introduction: Evolution or emergence of a new viral variant is a significant public health concern. Alphaviruses, such as Venezuelan equine encephalitis virus (VEEV), are mosquito-borne viruses which are becoming more prevalent due to expansion of vector habitats. Despite this, there are currently no antiviral therapies or FDA-approved vaccines available to treat or prevent VEEV infection. The increased prevalence of such viruses provides opportunities for novel variants to evolve. Key therapeutic molecules that could be developed against viral pathogens are recombinant antibodies or antibody fragments, such as the variable heavy domain of heavy chain antibodies (V H Hs). Methods: In vitro selections offer a promising pathway for identification of therapeutic antibodies, here we explored isolation of V H Hs using phage and yeast display methodology with three antigen formats 1) recombinant E2, 2) linear peptides of E2, selected based on molecular dynamics analysis, and 3) UV inactivated virus. Results: Here we report four novel “human” V H Hs which bind to the VEEV E2 protein selected using different strategies that include both computational and biochemical design of suitable antigens and whole virus selections. These V H Hs have distinct complementarity-determining regions (CDRs). Multiple VHHs bind to the VEEV viral particles in ELISAs, and we report the peptide epitope recognized by these V H Hs. Discussion: Though non-neutralizing, these V H Hs bind to and sequester VEEV viral particles preventing infection, demonstrating the potential of these V H Hs to perform viral “sponging” which represents a novel therapeutic approach. The selection strategies we report may have applications to further antibody developments against other viruses.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

M&V in ESPC: The U.S. Federal Experience and Implications for Developing ESPC Markets

The United States Federal Government has been conducting guaranteed savings energy savings performance contracts for over 20 years and now relies on ESPC for the majority of its energy efficiency work. Along with a related financed project type, these deals resulted in $4.2 billion of project investment in the five years ending in 2016, a pace that has even accelerated since. Measurement and verification (M&V) on the projects is the key to assuring savings realization and persistence. Perceived as a weakness or burdensome added cost in the early years of the program, M&V has become a strength. All energy conservation measures (ECMs) have some form of measurement – defined as a measured baseline establishment followed by at least one measurement of the main energy-saving parameter taken in the performance period for each ECM. The government’s in-house energy consulting office, the Federal Energy Management Program (FEMP), now recommends measurement of these “Option A” M&V ECMs throughout the contract term, usually annually. Moreover, a significantly higher percentage of projects are now characterized by more ambitious M&V, including Option B (all parameter measurement) for most generation (including renewable) and some efficiency measures, and more frequent Option C (whole facility utility bill analysis) for “deep retrofit” projects with multiple, interactive ECMs. Coincident with this progress in M&V has been a much greater embracing of ESPC by the federal agencies, resulting in the enormous rate of projects now executed. This paper traces the evolution of M&V in federal ESPC and argues that the heightened credibility of the savings has contributed significantly to the procurement vehicle’s long-term viability. This focus on savings integrity via M&V has been learned over two decades for U.S. federal ESPC, but countries with developing ESPC markets would be wise to emphasize it as their markets emerge, allowing them to avoid some of the “growing pains” experienced in the U.S.

Coleman, Philip↗
DOE OSTI2020

M&V in ESPC: The U.S. Federal Experience and Implications for Developing ESPC Markets

The United States Federal Government has been conducting guaranteed savings energy savings performance contracts for over 20 years and now relies on ESPC for the majority of its energy efficiency work. Along with a related financed project type, these deals resulted in $4.2 billion of project investment in the five years ending in 2016, a pace that has even accelerated since.Measurement and verification (M&V) on the projects is the key to assuring savings realization and persistence. Perceived as a weakness or burdensome added cost in the early years of the program, M&V has become a strength. All energy conservation measures (ECMs) have some form of measurement – defined as a measured baseline establishment followed by at least one measurement of the main energy-saving parameter for a given ECM taken in the performance period. The government’s in-house energy consulting office, the Federal Energy Management Program (FEMP), now recommends measurement of these “Option A” M&V ECMs throughout the contract term, usually annually. Moreover, a significantly higher percentage of projects are now characterized by more ambitious M&V, including Option B (all parameter measurement) for most generation (including renewable) and some efficiency measures, and more frequent Option C (whole facility utility bill analysis) for “deep retrofit” projects with multiple, interactive ECMs. Coincident with this progress in M&V has been a much greater embracing of ESPC by the federal agencies, resulting in the enormous rate of projects now executed. This paper traces the evolution of M&V in federal ESPC and argues that the heightened credibility of the estimated (and guaranteed) savings has contributed significantly to the procurement vehicle’s long-term viability. This focus on savings integrity via M&V has been learned over two decades for U.S. federal ESPC, but countries with developing ESPC markets would be wise to emphasize it as their markets emerge, allowing them to avoid some of the “growing pains” experienced in the U.S.

Coleman, Philip↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

With an increase of control over crystalline defects, metallorganic vapor phase epitaxy (MOVPE)-grown III-V-on-Si multijunction solar cells have seen rapid increases in efficiency in recent years, pointing to a promising path to lower cost III-V solar cells. However, the cost of chemo-mechanical polishing the Si wafers to prepare them for epitaxy is high. The use of V-groove nanopatterns enables similar defect reduction to that achieved on planar wafers, but the nanopatterns can be fabricated with a low-cost process. While V-grooves offer advantages over planar Si, they add complexity to the growth process. In particular, coalescence can cause the formation of threading dislocations, and the highly-directional growth conditions required for coalescence are unusual for MOVPE. We have studied the coalescence of GaP films nucleated directly on V-groove Si by MOVPE. We observed that for optimized growth conditions (V/III=5,000 and T=800 C) two growth modes were possible, and the resulting morphology depended on the exact geometry of the SiNx cap used to cover the (0 0 1)-oriented Si at the tops of the grooves. For caps with a width >100 nm, noncoalescing, nano ridge-like growth terminating in f1 1 1g facets was observed. For narrower caps, coalescence with an RMS roughness of 0.2 nm as measured by atomic force microscopy was observed. We will discuss mechanisms responsible for this phenomenon, including the role of Si from the substrate surface. The dislocation dynamics of this system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). We find that V-grooves do not block dislocation glide; ECCI measurements show misfit dislocations greater than 10 micrometers long observed to continue perpendicularly across neighboring V-grooves. In addition, all threading dislocations appear to lie on f1 1 1g planes, consistent with the GaP relaxing via glided-in glissile dislocations. The dislocation dynamics and morphological evolution of the coalescence of GaP on Si, possible mechanisms behind the observed phenomenons, and further dislocation mitigation strategies for these materials will be presented.

dislocation dynamics↗
DOE OSTI2024

Self-compensation of group-V acceptors in CdTe

Cadmium Telluride is at the core of an important thin-film technology for photovoltaics that is already commercially available, yet the CdTe-based solar cell efficiency remains limited at 22%, well below the theoretical limit of ~30%. Increasing the hole concentration is crucial for higher efficiency, and group-V elements such as As, P, and Sb are potential dopants as they are shallow acceptors. Nevertheless, group-V doped p-type CdTe often exhibits low doping activation, and the compensation source remains debated. Here, we performed hybrid density functional calculations with spin-orbit coupling to investigate possible sources of hole compensation in group-V doped CdTe. First, regarding possible self-compensation of the group-V dopants, we find that the formation of AX centers is unlikely since they are found to be unstable relative to the shallow acceptor forms. However, if the group-V dopants come in during growth (such as dimer molecules As2, P2, and Sb2), we find that the impurity atoms, which would occupy nearest neighbor sites, maintain the V-V bonds, limiting the hole density. For the native defects, our study reveals that Cd interstitial is the lowest energy donor defect in p-type CdTe. Still, it has a small migration barrier of 0.5 eV, making it highly mobile and unstable at room temperature. The Te vacancy is the next lowest formation energy donor. The migration barrier of 1.4 eV indicates that the Te vacancy is stable at room temperature. The antisite CdTe is also a donor, with low formation energy and stable at room temperature, potentially limiting the hole concentration. Our results, therefore, shed light on possible compensation centers and some guidance on how to avoid them.

14 SOLAR ENERGY↗
DOE OSTI2022

Density functional theory study of formation and diffusion of hydrogen, deuterium, and tritium in Pd-V intermetallic compounds

Permeation of hydrogen isotopes in palladium/vanadium bimetallic membranes is known to deteriorate over time because of Pd-V interdiffusion. Additionally, intermetallic compounds may form in the interdiffusion region. Density functional theory is employed to study how Pd-V compounds may affect the permeation. Three compounds Pd 8 V, alpha-Pd 2 V, and PdV 4 are explored in this study. Formation and migration energies of hydrogen, deuterium, and tritium are calculated and subsequently compared to the data in pure Pd and V metals. The calculations show that both the formation and migration energies in the compounds are higher than in the pure metals. Thus, the permeation of these isotopes in the compounds is lower than in the pure metals. In addition, the least permeable compound is the one near the middle of the composition range, i.e. the alpha-Pd 2 V. The results provide atomistic insight for the permeation reduction in Pd/V membranes as interdiffusion progresses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Cation reordering instead of phase transitions: Origins and implications of contrasting lithiation mechanisms in 1D ζ- and 2D α-V 2 O 5

Substantial improvements in cycle life, rate performance, accessible voltage, and reversible capacity are required to realize the promise of Li-ion batteries in full measure. Here, we have examined insertion electrodes of the same composition (V 2 O 5 ) prepared according to the same electrode specifications and comprising particles with similar dimensions and geometries that differ only in terms of their atomic connectivity and crystal structure, specifically two-dimensional (2D) layered α-V 2 O 5 that crystallizes in an orthorhombic space group and one-dimensional (1D) tunnel-structured ζ-V 2 O 5 crystallized in a monoclinic space group. By using particles of similar dimensions, we have disentangled the role of specific structural motifs and atomistic diffusion pathways in affecting electrochemical performance by mapping the dynamical evolution of lithiation-induced structural modifications using ex situ scanning transmission X-ray microscopy, operando synchrotron X-ray diffraction measurements, and phase-field modeling. We find the operation of sharply divergent mechanisms to accommodate increasing concentrations of Li-ions: a series of distortive phase transformations that result in puckering and expansion of interlayer spacing in layered α-V 2 O 5 , as compared with cation reordering along interstitial sites in tunnel-structured ζ-V 2 O 5 . By alleviating distortive phase transformations, the ζ-V 2 O 5 cathode shows reduced voltage hysteresis, increased Li-ion diffusivity, alleviation of stress gradients, and improved capacity retention. The findings demonstrate that alternative lithiation mechanisms can be accessed in metastable compounds by dint of their reconfigured atomic connectivity and can unlock substantially improved electrochemical performance not accessible in the thermodynamically stable phase.

25 ENERGY STORAGE↗
DOE OSTI2021

Angular correlations in pA collisions from CGC: multiplicity and mean transverse momentum dependence of $$v_2$$

Abstract Within the dense-dilute Color Glass Condensate approach, and using the Golec–Biernat–Wuesthoff model for the dipole scattering amplitude, we calculate $$v_2^2$$ v 2 2 as well as the correlations between $$v_2^2$$ v 2 2 and both the total multiplicity and the mean transverse momentum of produced particles. We find that the correlations are generally very small consistent with the observations. We note an interesting sharp change in the value of $$v^2_2$$ v 2 2 as well as of its correlations as a function of the width of the transverse momentum bin. This crossover is associated with the change from Bose enhancement dominance of the correlation for narrow bin to HBT dominated correlations for larger bin width.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

The Energy and Operational Impacts of Using 0-10V Control for LED Streetlights

LED lighting is becoming widely adopted and displacing most traditional lighting technologies. However, the traditional methods used to control light sources have not seen similar displacement. Lighting systems have historically utilized either a proprietary control method, or one of a handful of standardized methods (e.g., 0-10V, DALI, DMX512). The utility and market success of the standardized methods has been limited for a variety of reasons. Analog 0-10V methods have long been popular due to their simplicity and low cost of implementation and are presently the most commonly available control interface for indoor and outdoor LED products in North America. The emergence of “connected lighting systems” with more modern network interfaces and luminaire-level sensors and intelligence was anticipated by many to mark the beginning of the end of analog control. However, 0-10V interfaces continue to be prevalent with these more “digital” systems. The use of 0-10V methods has significant tradeoffs. 0-10V standards have historically not explicitly defined the relationship between the luminaire input control signal and output luminous flux for the full control signal range. As a result, it is difficult to predict relative luminaire light output and input power at any particular control voltage, and in practice the performance across LED drivers and the luminaires power is inconsistent. While this inconsistency has long been acknowledged by experts in the field, it is not accounted for in standard practice deployment, and end-users continue to regularly see unexpected and undesirable performance. It is hoped that the results from this study will help the lighting industry and standards developing organizations better understand and possibly resolve the shortcomings of 0-10V products, and consider what is best for the industry – additional incremental improvements to this fundamentally limited analog technology, or fully moving on to existing digital approaches, such as DALI D4i, that deliver accurate and consistent dimming performance across all luminaires in the system and thus guarantee the delivery of expected light levels, and energy and cost savings. Recommendations consistent with these goals are made to lighting and driver manufacturers, lighting software developers, standard developing organizations, and system designers and specifiers.

0-10V↗
DOE OSTI2023

First Simultaneous Determination of Inclusive and Exclusive | V u b |

The first simultaneous determination of the absolute value of the Cabibbo-Kobayashi-Maskawa matrix element V ub using inclusive and exclusive decays is performed with the full Belle data set at the $Υ$(4S) resonance, corresponding to an integrated luminosity of 711 fb -1 . We analyze collision events in which one B meson is fully reconstructed in hadronic modes. This allows for the reconstruction of the hadronic X u system of the semileptonic b → $πℓe_ℓ$ decay. We separate exclusive B → $πℓ\overline{ν}_ℓ$ decays from other inclusive B → $X_uℓ\overline{ν}_ℓ$ and backgrounds with a two-dimensional fit that utilizes the number of charged pions in the X u system and the four-momentum transfer q 2 between the B and X u systems. Combining our measurement with information from lattice QCD and QCD calculations of the inclusive partial rate as well as external experimental information on the shape of the B → $πℓe_ℓ$ form factor, we determine |$V^{excl}_{ub}$| = (3.78 ± 0.23 ± 0.16 ± 0.14) × 10 -3 and |$V^{incl}_{ub}$| = (3.88 ± 0.20 ± 0.31 ± 0.09) x 10 -3 , respectively, with the uncertainties being the statistical error, systematic errors, and theory errors. The ratio of |$V^{excl}_{ub}$|/|$V^{incl}_{ub}$| 0.97 ± 0.12 is compatible with unity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

High Radiation Resistance in the Binary W‐Ta System Through Small V Additions: A New Paradigm for Nuclear Fusion Materials

Abstract Refractory High‐Entropy Alloys (RHEAs) are promising candidates for structural materials in nuclear fusion reactors, where W‐based alloys are currently leading. Fusion materials must withstand extreme conditions, including i) severe radiation damage from energetic neutrons, ii) embrittlement due to H and He ion implantation, and iii) exposure to high temperatures and thermal gradients. Recent RHEAs, such as WTaCrV and WTaCrVHf, have shown superior radiation tolerance and microstructural stability compared to pure W, but their multi‐element compositions complicate bulk fabrication and limit practical use. In this study, it is demonstrated that reducing alloying elements in RHEAs is feasible without compromising radiation tolerance. Herein, two Highly Concentrated Refractory Alloys (HCRAs) − W 53 Ta 44 V 3 and W 53 Ta 42 V 5 (at.%) − were synthesized and investigated. We found that small V additions significantly influence the radiation response of the binary W–Ta system. Experimental results, supported by ab‐initio Monte Carlo simulations and machine‐learning‐driven molecular dynamics, reveal that minor variations in V content enhance Ta–V chemical short‐range order (CSRO), improving radiation resistance in the W 53 Ta 42 V 5 HCRA. By focusing on reducing chemical complexity and the number of alloying elements, the conventional high‐entropy alloy paradigm is challenged, suggesting a new approach to designing simplified multi‐component alloys with refractory properties for thermonuclear fusion applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Photoinduced Melting of V 4 O 7 Correlated State

The compound V 4 O 7 is one of the Magnéli phase (V n O 2n - 1 , n = 3, 4, …, 9) correlated vanadium oxides with distinct intriguing electronic and structural properties. The possibility to manipulate the phase state of V 4 O 7 on an ultrafast time scale by light makes this material promising for potential applications in photonics, optoelectronics, quantum, and neuromorphic circuit design. In this work, the ultrafast spectroscopy of V 4 O 7 reveals the second-order nature of the photoinduced insulator-to-metal transition, emphasizing electronic and lattice contributions. The findings reveal the influence of the laser excitation level and temperature on these dynamics, providing a comprehensive understanding of V 4 O 7 structural changes and response to external stimuli. The phenomenological model based on the Landau–Ginzburg formalism provides a robust framework for explaining the photoinduced transition dynamics, showing a detailed picture of the light interaction with the electronic and lattice subsystems. This integrated approach significantly enhances the understanding of V 4 O 7 complex behavior upon photoexcitation, opening new possibilities for developing new optoelectronic devices and noninvasive optical control of the phase transition pathways in vanadates.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Anomalous Redox Features Induced by Strong Covalency in Layered NaTi 1-y V y S 2 Cathodes for Na-Ion Batteries

The rising demand for energy density of cathodes means the need to raise the voltage or capacity of cathodes. Transition metal (TM) doping has been employed to enhance the electrochemical properties in multiple aspects. The redox voltage of doped cathodes usually falls in between the voltage of undoped layered cathodes. However, in this study, we found anomalous redox features in NaTi 1-y V y S 2 . The first discharge platform potential (2.4 V) is significantly higher than that of undoped NaTiS 2 and NaVS 2 (both around 2.2 V), and the energy density is raised by 15%. We speculate that the anomalous voltage is mainly attributed to the strong hybridization in the Ti-V-S system. Ti 3+ and V 3+ undergo charge transfer and form a more stable Ti (t 2g 0 e g 0 ) and V (t 2g 3 e g 0 ) electronic configuration. Our results indicate that higher voltage of cathode materials could be achieved by strong TM-ligand covalency, and this conclusion provides possible opportunities to explore high voltage materials for future layered cathodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Circumventing Radical Generation on Fe–V Atomic Pair Catalyst for Robust Oxygen Reduction and Zinc–Air Batteries

Iron–nitrogen–carbon (Fe–N–C) catalysts are considered the most active platinum-free alternative for oxygen reduction reaction (ORR), yet the generated reactive oxygen species (ROS) from general mechanistic pathway rapidly impair the ORR activity and stability of Fe–N–C. Herein, we establish and report an ORR pathway-switching strategy to circumvent ROS generation and fundamentally improve the activity and stability of Fe–N–C via DFT guided catalyst design. The constructed Fe–V atomic pair catalyst (Fe 1 V 1 -NC) with N 2 Fe-N 2 -VN 2 configuration enables side-on adsorption of O 2 and subsequent direct-breaking of the O═O bond to form O*, thereby avoiding the formation of ROS radicals. Importantly, there is intersite electron interaction between FeN 4 and VN 4 , which further boosts the ORR activity. Consequently, Fe 1 V 1 -NC exhibits outstanding ORR activity with onset and half-wave (E 1/2 ) potentials at 1.02 and 0.89 V versus RHE, respectively, in 0.1 M KOH. Record-high stability is achieved on Fe 1 V 1 -NC with a minimal decay in E 1/2 by 16 mV over 50000 cycles, surpassing Fe–N–C counterpart and most of the catalysts reported to date. The Fe 1 V 1 -NC-based zinc-air battery reported here demonstrates exceptional durability up to 400 h at 10 mA·cm −2 . This work identifies the intrinsic correlation between ORR pathway, activity, and stability, advancing development of stable catalytic systems.

Fe-N-C↗