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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Creep of chemically vapor deposited SiC fibers

The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

Dicarlo, J. A.↗
NASA NTRS1987

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

The fabrication of highly efficient indium phosphide solar cells by metalorganic chemical vapor deposition is reported. Since InP can be annealed at temperatures at low as approximately 100 C and the annealing occurs under solar illumination itself, this accomplishment is relevant to space power systems. A total area air mass zero efficiency of 17.9 percent and an air mass 1.5 efficiency of 20.4 percent are reported. Electrical characterization identifying loss mechanisms is made, and a shallow homojunction design is discussed along with possible improvements.

Spitzer, M. B.↗
NASA NTRS1988

Convection and mass-transport in laser-induced chemical vapor deposition

Gas flow and energy and species transport in laser-induced chemical vapor deposition (LICVD) of amorphous silicon films by silane pyrolysis are analyzed by finite element analysis of a two-dimensional model for the process. Spatial nonuniformity of the deposited film is shown to result from diffusion controlled transport of products between the beam and substrate. Deposition profiles are affected by buoyancy-driven convection only at increased gas pressures. Horizontal orientation of the reactor with respect to gravity is optimal because the stagnation-like flow, that results adjacent to the substrate, enhances mixing, and smoothes the film profile.

Patnaik, S.↗
NASA NTRS1992

Role of Si2N2O in the passive oxidation of chemically-vapor-deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350 C show that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3N4. During normal oxidation, k sub p for SiC was 15 times higher than that for Si3N4, and the oxide scale on Si3N4 was found by SEM and TEM to contain a prominent Si2N2O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500 C and reoxidized at 1350 C as before, three things happen: the oxidation k sub p increases over 55-fold for Si3N4, and 3.5-fold for SiC; the Si3N4 and SiC oxidize with nearly equal k sub p's; and, most significantly, the oxide scale on Si3N4 is found to be lacking an inner Si2N2O layer. The implications of this correlation for the competing models of Si3N4 oxidation are discussed.

Ogbuji, Linus U. J. T.↗
NASA NTRS1993

The Corrosion Protection of Metals by Ion Vapor Deposited Aluminum

A study of the corrosion protection of substrate metals by ion vapor deposited aluminum (IVD Al) coats has been carried out. Corrosion protection by both anodized and unanodized IVD Al coats has been investigated. Base metals included in the study were 2219-T87 Al, 7075-T6 Al, Titanium-6 Al-4 Vanadium (Ti-6Al-4V), 4130 steel, D6AC steel, and 4340 steel. Results reveal that the anodized IVD Al coats provide excellent corrosion protection, but good protection is also achieved by IVD Al coats that have not been anodized.

Danford, M. D.↗
NASA NTRS1992

Chemical vapor deposition modeling for high temperature materials

The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

Goekoglu, Sueleyman↗
NASA NTRS1992

Chemical vapor deposition modeling for high temperature materials

The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

Gokoglu, Suleyman A.↗
NASA NTRS1990

Thermal Conductivity and Temperature Limits of Electron-Beam Physical-Vapor-Deposited ZrO2-7wt%Y2O3 Thermal Barrier Coating

The electron-beam physical-vapor-deposited (EB-PVD) ZrO2-7wt%Y2O3 thermal barrier coating has been widely used to protect engine hot section components in modem aircraft engines. Thermal conductivity and the conductivity increases due to sintering and phase changes are important coating design parameters. There is a need to characterize the coating thermal conductivity behavior and temperature limits, in order to potentially take full advantage of the coating capability. In addition, since the ZrO2-7wt%Y2O3 coating is often used as a baseline coating for the development of advanced lower thermal conductivity and higher temperature capability coatings, a thorough evaluation of the coating conductivity behavior at future higher engine operating temperatures will be useful for more accurately assessing the benefit gained from the new coating systems. In this study, thermal conductivity behavior of EB-PVD ZrO2-7wt%Y2O3 coating has been systematically investigated as a function of temperature (up to 2600 F) and time under steady-state and cyclic test conditions using a laser heat-flux technique. Thermal conductivity change kinetics were determined under realistic engine high temperature thermal gradient conditions, and correlated to the coating microstructural and phase changes. The thermal conductivity prediction models have been established in terms of heat flux, time, and testing temperatures.

Zhu, Dongming↗
NASA NTRS1989

Chemical-Vapor Deposition Of Cd1-xMnxTe

Experimental process makes films with interesting magnetic and magneto-optical properties. Films of dilute magnetic semiconductor alloy Cd1-xMnxTe deposited on glass and GaAs substrates by metalorganic chemical-vapor deposition (MOCVD). Devices made with Cd1-xMnxTe films known to exhibit strong photoluminescence, stimulated emission, and magnetically-tunable lasing action. In addition, energy-band gaps of such material tailored by altering its composition - property giving flexibility in development of high-efficiency cascade solar photovoltaic cells. Performs at atmospheric pressure, resulting in more-uniform films, covering larger area, and enabling higher production rate.

Nouhi, Akbar↗
NASA NTRS1966

Thin-film ferrites vapor deposited by one-step process in vacuum

Thin-film ferrites are formed by vapor deposition of a mixture of powdered ferrites and powdered boron oxide at controlled temperatures in a vacuum chamber. These films are used in memory devices for computers and as thin-film inductors in communications and telemetry systems.

Hacskaylo, M.↗