Search NASA⌕ Search

SEARCH · Search NASA

Results for “VAPOR PHASE EPITAXY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

InAsSbBi, a direct band-gap, III-V, LWIR material

In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation.

Stringfellow, G. B.↗
NASA NTRS1991

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Wickham, K. R.↗
NASA NTRS1991

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed.

Wanlass, M. W.↗
NASA NTRS1991

InP concentrator solar cells for space applications

The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

Ward, J. S.↗
NASA NTRS1990

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

Tyagi, S.↗
NASA NTRS1990

Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

Bothra, S.↗
NASA NTRS1991

InP concentrator solar cells

The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy. A preliminary assessment of the effects of grid-collection distance and emitter-sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4 percent AM0 (24.3 percent direct) at 25 C are fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

Ward, J. S.↗
NASA NTRS1994

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Hoffman, Richard W., Jr.↗
NASA NTRS2003

Interfacial Reaction Studies Using ONIOM

In this report, we focus on the calculations of the energetics and chemical kinetics of heterogeneous reactions for Organometallic vapor phase epitaxy (OMVPE). The work described in this report builds upon our own previous thermochemical and chemical kinetics studies. The first of these articles refers to the prediction of thermochemical properties, and the latter one deals with the prediction of rate constants for gaseous homolytic dissociation reactions. The calculations of this investigation are at the microscopic level. The systems chosen consisted of a gallium nitride (GaN) substrate, and molecular nitrogen (N2) and ammonia (NH3) as adsorbants. The energetics for the adsorption and the adsorbant dissociation processes were estimated, and reaction rate constants for the dissociation reactions of free and adsorbed molecules were predicted. The energetics for substrate decomposition was also computed. The ONIOM method, implemented in the Gaussian98 program, was used to perform the calculations. This approach has been selected since it allows dividing the system into two layers that can be treated at different levels of accuracy. The atoms of the substrate were modeled using molecular mechanics6 with universal force fields, whereas the adsorbed molecules were approximated using quantum mechanics, based on density functional theory methods with B3LYP functionals and 6-311G(d,p) basis sets. Calculations for the substrate were performed in slabs of several unit cells in each direction. The N2 and NH3 adsorbates were attached to a central location at the Ga-lined surface.

Cardelino, Beatriz H.↗
NASA NTRS2004

Scanning Tunneling Optical Resonance Microscopy Developed

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Bailey, Sheila G.↗
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS2005

Characterization of Dual-Band Infrared Detectors for Application to Remote Sensing

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Abedin, M. Nurul↗
NASA NTRS2002

Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

InAs quantum dot↗
NASA NTRS2003

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

Semiconductor lasers quantum dots↗
NASA NTRS1998

Stable and Metastable InGaAs/GaAs Island Shapes and Surfactant-like Suppression of the Wetting Transformation

Diverging behaviors are observed in the InGaAs/GaAs Stranski-Krastanow (S-K) island formation during vapor phase epitaxy: varying group V partial pressures gives different critical thicknesses for the onset of the S-K transformation, island surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.

InGaAs/GaAs wetting transformation Stranski-Krasta↗
NASA NTRS2003

Lasing characteristics of InAs quantum dot laers on InP substrate

Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

quantum dot semiconductor laser↗
NASA NTRS1978

Vapor phase growth technique of III-V compounds utilizing a preheating step

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Olsen, Gregory Hammond↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗