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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Polarons and electrical leakage in BaZrO 3 and BaCeO 3

The proton conductors barium zirconate (BaZrO 3 , or BZO), barium cerate (BaCeO 3 , or BCO), and their alloys have attracted considerable interest as solid-state electrolytes in solid-oxide fuel and electrolysis cells. However, the reasons for their non-negligible electrical conductivity, which can limit their performance, are not fully understood. To address that question, we use first-principles calculations based on density functional theory to study the properties of hole and electron polarons in BZO and BCO. We confirm that hole polarons form in both materials, slightly more favorably in BCO. Electron polarons, on the other hand, are stable only in BCO and in Ce-containing alloys; in pure BZO, electron polaron states are unfavorable relative to free carriers, though they become accessible when Ce impurities are introduced. In general, doped BZO and BCO will have negligible electron concentrations, but larger concentrations of holes and hole polarons may be present. Avoiding extreme O-rich conditions and limiting dopant concentrations are key strategies for reducing significant p -type electrical leakage. Furthermore, our results provide physical insights into the different electronic behaviors of BZO and BCO, which can be used to optimize their performance as pure ionic conductors.

08 HYDROGEN↗
DOE OSTI2026

Excitation spectrum and low-temperature magnetism in the disordered defect-fluorite Ho2⁢Zr2⁢O7

In this work, we report on the thermomagnetic characterization and crystalline-electric field (CEF) energy scheme of the disordered defect-fluorite Ho2⁢Zr2⁢O7. This structural phase is distinguished by the coexistence of magnetic frustration and extensive disorder, with Ho3+ and Zr4+ sharing randomly the same 4⁢𝑎 site with even 50% occupancy, and an average 1/8 oxygen vacancy per unit cell. AC magnetic susceptibility measurements performed on powder samples down to 0.5 K revealed signs of slowing spin dynamics without glassy behavior, including a frequency dependent peak at ∼1K. Yet, no evidence for long-range magnetic order is found down to 200 mK in the specific heat. Inelastic neutron scattering measurements show a weak, low-lying CEF excitation around 2 meV, accompanied by a broad level centered at 60 meV. To fit our observations, we propose an approach to account for structural disorder in the crystal-field splitting of the non-Kramers Ho3+. Our model provides an explanation to the broadening of the high-energy, single-ion excitations and suggests that the zirconate ground-state wavefunction has zero magnetic moment. Through the breaking of local symmetry, structural disorder enables the magnetic response observed in Ho2⁢Zr2⁢O7, allowing the mixing of low-lying states at finite temperatures. Finally, we show that this scenario is in good agreement with the bulk properties reported in this work.

Gardner, Jason [ORNL] (ORCID:0000000278234072)↗
DOE OSTI2020

Piezoelectric Actuation of Graphene-Coated Polar Structures

Ferroelectric materials based on lead zirconate titanate (PZT) are widely used as sensors and actuators because of their strong piezoelectric activity. However, their application is limited because of the high processing temperature, brittleness, lack of conformal deposition, and a limited possibility to be integrated with the microelectromechanical systems (MEMS). Recent studies on the piezoelectricity in the 2-D materials have demonstrated their potential in these applications, essentially due to their flexibility and integrability with the MEMS. In this work, we deposited a few layer graphene (FLG) on the amorphous oxidized Si 3 N 4 membranes and studied their piezoelectric response by sensitive laser interferometry and rigorous finite-element modeling (FEM) analysis. Modal analysis by FEM and comparison with the experimental results show that the driving force for the piezoelectric-like response can be a polar interface layer formed between the residual oxygen in Si 3 N 4 and the FLG. The response was about 14 nm/V at resonance and could be further enhanced by adjusting the geometry of the device. These phenomena are fully consistent with the earlier piezoresponse force microscopy (PFM) observations of the piezoelectricity of the graphene on SiO 2 and open up an avenue for using graphene-coated structures in the MEMS.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electromechanical response of piezoelectric thin films subjected to large strain

The use of piezoelectric thin sensors, when subjected to large static strain levels in ultrasonic applications is reported in this paper. A novel flipped beam bending method is proposed to induce static strain level nearing twice the incipient yield strain in the beam material (~0.39%). First, the effect of static large strain on ultrasonic guided wave propagation in the beam was studied using the velocity measurements obtained from a laser Doppler vibrometer. Next, the ultrasonic response of thin sensors is studied under compressive and tensile static strain (±0.72%) with the sensors symmetrically bonded on the lower and upper surfaces, and at the same axial location. The ultrasonic guided wave response to varying levels of static strain is recorded at different center frequencies (50–400 kHz) of the narrow banded ultrasonic excitation. As a case study, the variation of the ultrasonic guided wave response of polyvinylidene difluoride (PVDF) thin sensors with center frequencies at different static strain levels was analyzed and compared with that of lead zirconate titanate (PZT) thin sensors. PZT sensors show a higher variation of sensing performance with strain when compared to PVDF sensors. Apart from static strain, the possible effects on the change in performance of sensors, such as the change in the capacitance is discussed. The characterization method provides a reusable beam arrangement to study the ultrasonic sensor performance at large static strain levels. Characterization at large strain level allows the development of fail-safe sensors even under large strain and permanent plastic deformation of structure on which they are bonded, allowing accurate ultrasonic structural health monitoring even in the presence of damage progression. Piezopolymer sensor like PVDF are least susceptible to static strain due to large yield strain and low modulus and can serve as fail-safe sensors under large strain.

Rathod, Vivek↗
DOE OSTI2024

Timescales of mafic magmatic fractionation documented by paleosecular variation in basaltic drill core, Snake River Plain volcanic province, Idaho, USA

Abstract The timescales over which fractional crystallization and recharge work in mafic volcano-plutonic provinces is subject to great uncertainty. Currently modeled processes are subject to the scale of measurement: monogenetic basaltic fields accumulate over hundreds of thousands of years, consistent with U-Th-Ra isotopic variations that imply 50% crystallization of basic magmas on timescales of 100,000 years or more, whereas crystal diffusion modeling implies phenocryst residence times of ~1–1000 years. Monogenetic basalts of the Snake River Plain in southern Idaho, USA, are up to 2 km thick and postdate passage over the Yellowstone–Snake River Plain hotspot. Detailed lithologic and geophysical logging of core from deep drill holes, along with chemical stratigraphy and high-resolution paleomagnetic inclination measurements, document individual eruptive units, compound lava flows, and basaltic flow groups that accumulated over 1–6 m.y. Hiatuses are commonly marked by loess or fluvial interbeds that vary from ~0.1 m thick to 20 m thick. Radiometric (40Ar-39Ar, detrital zircon U-Pb) and paleomagnetic timescale ages show that the deepest hole (Kimama drill hole, 1912 m total depth) accumulated over ~6 m.y. Cycles of fractional crystallization and recharge are recognized in the chemical stratigraphy as up-section shifts in major and trace elements; these fractionation cycles commonly represent 40%–50% fractionation. Individual fractionation cycles may comprise 20–40 eruptive units (8–17 lava flows) with little to no change in paleomagnetic inclination (0°–1°), whereas adjacent cycles may differ by several degrees from one another or reflect changes in polarity. Rates of paleosecular variation in Holocene lavas and sediments dated using 14C document significant shifts in magnetic inclination over short timescales, ranging from ~0.05° to 2°/decade, with an average of ~0.5°/decade and a minimum rate of 0.05°/decade. This implies that fractionation cycles with ≤1° variation in magnetic inclination formed on timescales of a few decades up to a few centuries (20–200 years). Thus, the lavas collectively represent only a few thousand years of eruptive activity, with major flow groups separated in time by tens to hundreds of thousands of years. We suggest that the rates defined by paleosecular variation capture the timescales of magmatic chamber evolution (fractionation/recharge) in the seismically imaged mid-crustal sill complex; in contrast, we suggest that crystal diffusion modeling captures the residence times in shallow subvolcanic magmatic chambers that underlie individual monogenetic volcanoes.

Geology↗
DOE OSTI2024

Compositional zoning of the Otowi Member of the Bandelier Tuff, Valles caldera, New Mexico, USA

The Otowi Member of the Bandelier Tuff erupted at ca. 1.60 Ma from the Valles caldera (New Mexico, USA). It consists of as much as 400 km 3 (dense rock equivalent) of strongly differentiated high-silica rhyolite and shows systematic upward variations in crystallinity, mineral chemistry, and trace element concentrations through its thickness, but the major element composition is almost constant and is near the low-pressure granite minimum. Incompatible trace elements in whole pumice fragments and glasses show well-correlated linear covariations. Upward zoning to lower abundances of incompatible trace elements is accompanied by development of overgrowths on quartz and alkali feldspar, although earlier-formed interiors of quartz and feldspar have near-constant compositions throughout the tuff, modified by cation diffusion in the case of feldspar. Melt inclusions in remnant quartz cores show diverse Pb isotope ratios, pointing to a wide range of distinct protoliths that contributed rhyolitic melt to the Otowi magma. Mineral thermometers suggest a modest temperature gradient through the melt body, perhaps of 40 °C, at the time of eruption. Chemical, textural, and mineralogical variations and volume-composition relations through the tuff are consistent with an origin for zoning by melting of a high-crystallinity cumulate layer beneath cognate supernatant liquid to produce denser, remobilized liquid of accumulative composition (i.e., the “modified mush model”). Melting may have occurred in several episodes. The latest of these episodes, probably thousands of years prior to eruption, introduced new rhyolitic liquid into the system and was associated with a thermal excursion, recorded in core compositions of pyroxene, during which much of the earlier crystal mass was dissolved. This left inherited cores and interiors of accumulated quartz and feldspar mantled with new growth having less-evolved compositions (higher Ti, Sr, and Ba). Changing solubility of zircon during cumulate melting produced a reversal of Zr concentrations. There is no clear petrologic evidence of a recharge eruption trigger; nonetheless, compositional zoning resulted mainly from repeated recharge-induced remobilization of quartz-feldspar cumulate. The Otowi system was built, evolved, and modified by several events over the course of a few hundred thousand years.

Wolff, J. A.↗
DOE OSTI2020

Advanced Manufacturing of Intermediate-Temperature Protonic Ceramic Electrochemical Cells

Proton conducting oxide (i.e., protonic ceramic) has been thought of as an ideal solid electrolyte for energy conversion and storage applications since Iwahara et al. reported the perovskite-type protonic ceramics represented by doped barium/strontium cerates and zirconates in the 1980s. Here, proton, as the charge carrier in protonic ceramics, possesses a much lower transport activation energy than oxide-ion, which has rendered protonic ceramics for extensive intermediate-temperature (IT, 400-700°C) electrochemical devices such as protonic ceramic fuel cells (PCFCs), reversible protonic ceramic fuel cells, and protonic ceramic membrane reactors.

08 HYDROGEN↗
DOE OSTI2023

Low thermal inertia thermal barrier coatings for spark ignition engines: An experimental study

Application of thermal barrier coatings in spark ignition engines have historically been avoided due to the knock penalty associated with higher surface temperatures induced by the ceramic layer. However, advances in low thermal inertia coatings (i.e. temperature swing coatings) that combine low thermal conductivity with low volumetric heat capacity can prevent excessively high surface temperatures during the intake stroke and reduce or avoid knock while improving performance and efficiency. In this study, a novel coating material was tested in a low compression ratio spark ignition engine to evaluate the performance of an advanced low thermal inertia coating during steady and cold-start conditions. A total of four pistons with this novel material was tested, with an additional piston coated with gadolinium zirconate. Spark timing sweeps demonstrated a maximum 0.8% relative thermal efficiency gain with a thin coating of the novel material. Here, the novel material coated above 200-microns showed a deterioration in performance and efficiency due to charge heating increasing knock propensity. Cold-start tests demonstrated that charge heating is beneficial for reducing unburned hydrocarbons and particle matter emissions.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Major to trace element imaging and analysis of iron age glasses using stage scanning in the analytical dual beam microscope (tandem)

Dark and clear silicate glasses formed during an iron age vitrification event ≈ 1500 years ago at the Broborg hillfort near Uppsala, Sweden have been analyzed using a scanning electron microscope equipped with a micro-X-ray fluorescence (μXRF) spectrometer. Correlated µXRF and electron beam-induced energy dispersive spectrometry (EDS) X-ray maps were collected via stage-scanning at constant velocity. This coupled procedure represents a new approach for the cultural heritage community to conduct analytical studies of archaeometric specimens composed of metal, ceramic, or mixed inorganic/organic materials, where major and trace element compositions are registered in space for areas up to the centimeter-length scale at micrometer-scale resolution. Overview images were used to select areas for EDS beam scan maps correlated with multispectral cathodoluminescence (CL) imaging and co-located quantitative EDS and μXRF point analysis. Fe, Ca, Mg, Ti, P, Mn, Zr, Zn, and Y are enriched in the dark glass, while Si, Al, K, Na, Ba, Sr, Rb, and Ga are enriched in the clear glass. Unmelted material is comprised predominately of quartz (SiO 2 ) along with trace apatite (Ca 5 (PO 4 ) 3 [Cl,OH]) and zircon (ZrSiO 4 ). Multivariate statistical analysis was used to measure the area fractions of high variance components while lower variance components represented phase mixtures. Differences between calculated melt viscosities for the glass compositions are consistent with field and laboratory observations. Coupled large area EDS and μXRF imaging shows significant promise for informed selection of higher spatial resolution and higher sensitivity follow-up studies, e.g., those performed using synchrotron analysis.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗
DOE OSTI2020

Materials Data on PrNbO4 by Materials Project

PrNbO4 is Zircon-like structured and crystallizes in the monoclinic C2/c space group. The structure is three-dimensional. Pr3+ is bonded in a 8-coordinate geometry to eight O2- atoms. There are a spread of Pr–O bond distances ranging from 2.48–2.51 Å. Nb5+ is bonded in a tetrahedral geometry to four O2- atoms. There is two shorter (1.88 Å) and two longer (1.91 Å) Nb–O bond length. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 3-coordinate geometry to two equivalent Pr3+ and one Nb5+ atom. In the second O2- site, O2- is bonded in a distorted trigonal planar geometry to two equivalent Pr3+ and one Nb5+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CeSiO4 by Materials Project

CeSiO4 is Zircon structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Ce4+ is bonded in a 8-coordinate geometry to eight equivalent O2- atoms. There are four shorter (2.32 Å) and four longer (2.43 Å) Ce–O bond lengths. Si4+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All Si–O bond lengths are 1.65 Å. O2- is bonded in a 1-coordinate geometry to two equivalent Ce4+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on ZrSiO4 by Materials Project

ZrSiO4 is Zircon-like structured and crystallizes in the tetragonal I4_1/a space group. The structure is three-dimensional. Zr4+ is bonded in a 8-coordinate geometry to eight equivalent O2- atoms. There are four shorter (2.17 Å) and four longer (2.30 Å) Zr–O bond lengths. Si4+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All Si–O bond lengths are 1.67 Å. O2- is bonded in a 3-coordinate geometry to two equivalent Zr4+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on LiYbF4 by Materials Project

LiYbF4 is Zircon-like structured and crystallizes in the tetragonal I4_1/a space group. The structure is three-dimensional. Li1+ is bonded in a 4-coordinate geometry to four equivalent F1- atoms. All Li–F bond lengths are 1.94 Å. Yb3+ is bonded in a 8-coordinate geometry to eight equivalent F1- atoms. All Yb–F bond lengths are 2.30 Å. F1- is bonded in a 3-coordinate geometry to one Li1+ and two equivalent Yb3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on YbAsO4 by Materials Project

YbAsO4 is Zircon structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Yb3+ is bonded in a 8-coordinate geometry to eight equivalent O2- atoms. There are four shorter (2.34 Å) and four longer (2.51 Å) Yb–O bond lengths. As5+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All As–O bond lengths are 1.72 Å. O2- is bonded in a 3-coordinate geometry to two equivalent Yb3+ and one As5+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on SmAsO4 by Materials Project

SmAsO4 is Zircon structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Sm3+ is bonded in a 8-coordinate geometry to eight equivalent O2- atoms. There are four shorter (2.39 Å) and four longer (2.48 Å) Sm–O bond lengths. As5+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All As–O bond lengths are 1.72 Å. O2- is bonded in a 3-coordinate geometry to two equivalent Sm3+ and one As5+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on HoAsO4 by Materials Project

HoAsO4 is Zircon structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Ho3+ is bonded in a 8-coordinate geometry to eight equivalent O2- atoms. There are four shorter (2.31 Å) and four longer (2.42 Å) Ho–O bond lengths. As5+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All As–O bond lengths are 1.72 Å. O2- is bonded in a 3-coordinate geometry to two equivalent Ho3+ and one As5+ atom.

36 MATERIALS SCIENCE↗