Defect annealing in irradiated semiconductors progress report no. 2, oct. 1, 1964 - mar. 31, 1965
Defect annealing in irradiated semiconductors and series expansion for isothermal annealing equations with secondary defect complexes
SERIES EXPANSION↗
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Defect annealing in irradiated semiconductors Progress report, Apr. 1 - Sep. 30, 1965
Defect annealing in irradiated semiconductors - approximate solutions to general annealing equations
SEMICONDUCTOR↗
Instantons in Quantum Annealing: Thermally Assisted Tunneling Vs Quantum Monte Carlo Simulations
Recent numerical result (arXiv:1512.02206) from Google suggested that the D-Wave quantum annealer may have an asymptotic speed-up than simulated annealing, however, the asymptotic advantage disappears when it is compared to quantum Monte Carlo (a classical algorithm despite its name). We show analytically that the asymptotic scaling of quantum tunneling is exactly the same as the escape rate in quantum Monte Carlo for a class of problems. Thus, the Google result might be explained in our framework. We also found that the transition state in quantum Monte Carlo corresponds to the instanton solution in quantum tunneling problems, which is observed in numerical simulations.
Quantum Monte Carlo↗
Computational Role of Tunneling in a Programmable Quantum Annealer
Quantum tunneling is a phenomenon in which a quantum state tunnels through energy barriers above the energy of the state itself. Tunneling has been hypothesized as an advantageous physical resource for optimization. Here we present the first experimental evidence of a computational role of multiqubit quantum tunneling in the evolution of a programmable quantum annealer. We developed a theoretical model based on a NIBA Quantum Master Equation to describe the multi-qubit dissipative cotunneling effects under the complex noise characteristics of such quantum devices.We start by considering a computational primitive, the simplest non-convex optimization problem consisting of just one global and one local minimum. The quantum evolutions enable tunneling to the global minimum while the corresponding classical paths are trapped in a false minimum. In our study the non-convex potentials are realized by frustrated networks of qubit clusters with strong intra-cluster coupling. We show that the collective effect of the quantum environment is suppressed in the critical phase during the evolution where quantum tunneling decides the right path to solution. In a later stage dissipation facilitates the multiqubit cotunneling leading to the solution state. The predictions of the model accurately describe the experimental data from the D-WaveII quantum annealer at NASA Ames. In our computational primitive the temperature dependence of the probability of success in the quantum model is opposite to that of the classical paths with thermal hopping. Specially, we provide an analysis of an optimization problem with sixteen qubits,demonstrating eight qubit cotunneling that increases success probabilities. Furthermore, we report results for larger problems with up to 200 qubits that contain the primitive as subproblems.
hard problems↗
Impurity effects of annealing of radiation defects in p-type silicon
Impurity effects of annealing of radiation defects in p-type silicon, considering annealing temperature
Drevinsky, P. J.↗
Study of a columnar grain structure produced in a superalloy by gradient-annealing prealloyed powder extrusions
Annealing in a temperature gradient was used to produce a structure of continuous columnar grains in alloy 713 C made by extrusion of prealloyed powder. The columnar-grained specimens had tensile strengths within plus or minus 5 percent of those of the as-cast alloy at 760 C and 980 C but were significantly stronger at room temperature. Stress-rupture tests at 760 C and 980 C showed lives scattered from 17 to 376 percent of those of as-cast 713 C tested under the same conditions. X-ray diffraction studies showed the large grains formed upon annealing to have a well-defined texture, although the as-extruded material had none.
Miner, R. V., Jr.↗
Interference effect on annealing temperature of A and E centers in silicon.
The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.
Fang, P. H.↗
Observation of defect annealing in neutron-irradiated silicon by space-charge-limited current.
Use of space-charge-limited current (SCLC) to observe defect annealing in neutron-irradiated silicon. From the observation of the trap-filled-limit voltage a deep-trap concentration in the irradiated unannealed crystals is found to be at least 1.4 x 10 to the 12th power per cu cm. Shallow traps are also observed. This deep-trap concentration decreases with anneal temperature up to 200 C, above which SCLC can no longer be observed. There is evidence that at least some of this decrease is due to the conversion of the deep traps to shallow traps.
Magee, T. J.↗
Effect of outdoor exposure at ambient and elevated temperatures on fatigue life of Ti-6Al-4V titanium alloy sheet in the annealed and the solution treated and aged condition
Specimens of Ti-6Al-4V titanium alloy sheet in the annealed and the solution-treated and aged heat-treatment condition were exposed outdoors at ambient and 560 K (550 F) temperatures to determine the effect of outdoor exposure on fatigue life. Effects of exposure were determined by comparing fatigue lives of exposed specimens to those of unexpected specimens. Two procedures for fatigue testing the exposed specimens were evaluated: (1) fatigue tests conducted outdoors by applying 1200 load cycles per week until failure occurred and (2) conventional fatigue tests (continuous cycling until failure occurred) conducted indoors after outdoor exposure under static load. The exposure period ranged from 9 to 28 months for the outdoor fatigue-test group and was 24 months for the static-load group. All fatigue tests were constant-amplitude bending of specimens containing a drilled hole (stress concentration factor of 1.6). The results of the tests indicate that the fatigue lives of solution-treated and aged specimens were significantly reduced by the outdoor exposure at 560 K but not by the exposure at ambient temperature. Fatigue lives of the annealed specimens were essentially unaffected by the outdoor exposure at either temperature. The two test procedures - outdoor fatigue test and indoor fatigue test after outdoor exposure - led to the same conclusions about exposure effects.
Phillips, E. P.↗
Annealing of aromatic polyimide precursors
A study has been made of the thermal behavior of polyimide precursors: an isomeric pair of crystals of the complex formed by p-phenylenediamine with the separated isomers of the di-isopropyl ester of pyromellitic acid. Specimens of this material were isothermally annealed in the temperature range 120 C to 170 C for periods of time up to 1 week. Although this temperature range is well below that customarily used for imidizations, the working hypothesis was that it would be more likely that a polymer embodying at least part of the precursor structure could be formed if the molecular motion was minimized to that actually required for the formation of the imide linkage. The progress of the annealing was followed by: infrared spectroscopy, differential thermal analysis, powder X-ray diffraction, and thermal gravimetric analysis. Single crystal X-ray analysis of the meta monomer yields a structure of chains of alternating acid and base and suggests that this monomer is amenable to polymerization with a minimum of geometrical disruption.
Wakelyn, N. T.↗
Irradiate-anneal screening of total dose effects in semiconductor devices
An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.
Stanley, A. G.↗
The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire
Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.
Pisciotta, B. P.↗
Dissolution kinetics of small amounts of oxygen in tantalum alloy T-111 and internal oxide displacement reactions during annealing
Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.
Stecura, S.↗
Effect of dopants on annealing performance of silicon solar cells
The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.
Scott-Monck, J. A.↗
Pulsed-electron-beam annealing of ion-implantation damage
Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.
Greenwald, A. C.↗
Origin of reverse annealing in radiation-damaged silicon solar cells
The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.
Weinberg, I.↗
A comparison between pulsed and CW laser annealing for solar cell applications
The application of laser processing in solar cell fabrication is considered. Specific emphasis is placed on a process developed for the fabrication of a 16.6% silicon solar cell using pulsed laser processing. Results are presented which compare pulsed laser annealing with CW laser annealing in solar cell fabrication.
Jellison, G. E., Jr.↗
Annealing of radiation damage in low resistivity silicon solar cells
The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.
Weinberg, I.↗