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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Pressure and thermal annealing effects on the photoconversion efficiency of polymer solar cells

This paper presents the results of experimental and theoretical studies of the effects of pressure and thermal annealing on the photo-conversion efficiencies (PCEs) of polymer solar cells with active layers that consist of a mixture of poly(3-hexylthiophene-2,5-diyl) and fullerene derivative (6,6)-phenyl-C 61 -butyric acid methyl ester. The PCEs of the solar cells increased from ~2.3% (for the unannealed devices) to ~3.7% for devices annealed at ~150 °C. A further increase in thermal annealing temperatures (beyond 150 °C) resulted in lower PCEs. Further improvements in the PCEs (from ~3.7% to ~5.4%) were observed with pressure application between 0 and 8 MPa. However, a decrease in PCEs was observed for pressure application beyond 8 MPa. The improved performance associated with thermal annealing is attributed to changes in the active layer microstructure and texture, which also enhance the optical absorption, mobility, and lifetime of the optically excited charge carriers. The beneficial effects of applied pressure are attributed to the decreased interfacial surface contacts that are associated with pressure application. The implications of the results are then discussed for the design and fabrication of organic solar cells with improved PCEs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit. One of the key limitations of this technology is the degradation of silicon wafers during in situ annealing in the molecular beam epitaxy chamber. Determining the nature of contaminants in this process is key to improve the efficiency of epitaxial tandem solar cells. However, to date, the nature of contaminants from molecular beam epitaxy chambers remains unknown. In this work, we use photoluminescence imaging, lifetime spectroscopy, and deep level transient spectroscopy to measure the electronic properties of extrinsic impurities incorporated during annealing in the molecular beam epitaxy chamber. Photoluminescence images reveal that at least two impurities diffuse into silicon wafers during molecular beam epitaxy annealing. One is highly localized, while the other one is distributed uniformly across the whole wafer. Phosphorus diffusion is found to confine the localized impurity within the diffused layer but is ineffective at preventing the indiffusion of other impurities. Lifetime spectroscopy shows that metastable impurities with characteristic similar to Cr and CrB in our molecular beam epitaxy annealed silicon wafers. No evidence of Fe or FeB was observed. The emission rates and concentrations of the electrically active defects were measured with deep-level transient spectroscopy: The emission rates of detected defects do not match that of known Cr-related defects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of annealing temperature on the magnetic properties of highly crystalline biphase iron oxide nanorods

We report on the effects of annealing temperatures ranging from 225 °C to 325 °C on the magnetic properties of high aspect ratio iron oxide nanorods consisting of a ferrimagnetic Fe 3 O 4 phase and an antiferromagnetic α-Fe 2 O 3 phase in an as-prepared state. Annealing at the aforementioned temperatures under a constant flow of O 2 for 3 h leads to an increment of the volume fraction of the antiferromagnetic α-Fe 2 O 3 phase and concomitant enhancement of the crystallinity of the ferrimagnetic Fe 3 O 4 phase. These opposing effects compete with each other, resulting in a decrease in global magnetization with increasing the annealing temperature. The desirable magnetic properties are achieved for the sample annealed at 250 °C. For all samples investigated, we observed an increase in low field magnetization at low temperatures after the sample is field cooled in the presence of a 1T magnetic field, which we attribute to the ordering of macro-spins of the weakly ordered antiferromagnetic α-Fe 2 O 3 phase in the presence of the cooling field. Our study will pave the way for determining the optimal conditions to enhance the magnetic characteristics in iron oxide nanorods, which will enable its use in spintronics and biomedical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ion velocity effect governs damage annealing process in defective KTaO 3

Effects of electronic to nuclear energy losses (S e /S n ) ratio on damage evolution in defective KTaO 3 have been investigated by irradiating pre-damaged single crystal KTaO 3 with intermediate energy O ions (6 MeV, 8 MeV and 12 MeV) at 300 K. By exploring these processes in pre-damaged KTaO 3 containing a fractional disorder level of 0.35, the results demonstrate the occurrence of a precursory stage of damage production before the onset of damage annealing process in defective KTaO 3 that decreases with O ion energy. The observed ionization-induced annealing process by ion channeling analysis has been further mirrored by high resolution transmission electron microscopy analysis. In addition, the reduction of disorder level is accompanied by the broadening of the disorder profiles to greater depth with increasing ion fluence, and enhanced migration is observed with decreasing O ion energy. Since S e (~3.0 keV nm –1 ) is nearly constant for all 3 ion energies across the pre-damaged depth, the difference in behavior is due to the so-called 'velocity effect': the lower ion velocity below the Bragg peak yields a confined spread of the electron cascade and hence an increased energy deposition density. Here, the inelastic thermal spike calculation has further confirmed the existence of a velocity effect, not previously reported in KTaO 3 or very scarcely reported in other materials for which the existence of ionization-induced annealing has been reported. In other words, understanding of ionization-induced annealing has been advanced by pointing out that ion velocity effect governs the healing of pre-existing defects, which may have significant implication for the creation of new functionalities in KTaO 3 through atomic-level control of microstructural modifications, but may not be limited to KTaO 3 .

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Enhancing quantum annealing accuracy through replication-based error mitigation *

Abstract Quantum annealers like those manufactured by D-Wave Systems are designed to find high quality solutions to optimization problems that are typically hard for classical computers. They utilize quantum effects like tunneling to evolve toward low-energy states representing solutions to optimization problems. However, their analog nature and limited control functionalities present challenges to correcting or mitigating hardware errors. As quantum computing advances towards applications, effective error suppression is an important research goal. We propose a new approach called replication based mitigation (RBM) based on parallel quantum annealing (QA). In RBM, physical qubits representing the same logical qubit are dispersed across different copies of the problem embedded in the hardware. This mitigates hardware biases, is compatible with limited qubit connectivity in current annealers, and is well-suited for currently available noisy intermediate-scale quantum annealers. Our experimental analysis shows that RBM provides solution quality on par with previous methods while being more flexible and compatible with a wider range of hardware connectivity patterns. In comparisons against standard QA without error mitigation on larger problem instances that could not be handled by previous methods, RBM consistently gets better energies and ground state probabilities across parameterized problem sets.

Djidjev, Hristo N. (ORCID:0000000192868824)↗
DOE OSTI2023

Lower Bounds on Quantum Annealing Times

The adiabatic theorem provides sufficient conditions for the time needed to prepare a target ground state. While it is possible to prepare a target state much faster with more general quantum annealing protocols, rigorous results beyond the adiabatic regime are rare. Here, we provide such a result, deriving lower bounds on the time needed to successfully perform quantum annealing. The bounds are asymptotically saturated by three toy models where fast annealing schedules are known: the Roland and Cerf unstructured search model, the Hamming spike problem, and the ferromagnetic p-spin model. Our bounds demonstrate that these schedules have optimal scaling. Herein, our results also show that rapid annealing requires coherent superpositions of energy eigenstates, singling out quantum coherence as a computational resource.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Post-growth annealing effects on charge and spin excitations in ND 2-x Ce x CuO 4

We report a Cu K- and L 3 -edge resonant inelastic x-ray scattering study of charge and spin excitations of bulk Nd 2-x Ce x CuO 4 , with focus on post-growth annealing effects. For the parent compound Nd 2 CuO 4 (x = 0), a clear charge-transfer gap is observed in the as-grown state, whereas the charge excitation spectra indicate that electrons are doped in the annealed state. This is consistent with the observation that annealed thin-film and polycrystalline samples of RE 2 CuO 4 (RE = rare earth) can become metallic and superconducting at sufficiently high electron concentrations without Ce doping. For x = 0.16, a Ce concentration for which it is known that oxygen reduction destroys long-range antiferromagnetic order and induces superconductivity, we find that the high-energy spin excitations of non-superconducting as-grown and superconducting annealed crystals are nearly identical. This finding is in stark contrast to the significant changes in the low-energy spin excitations previously observed via neutron scattering

36 MATERIALS SCIENCE↗
DOE OSTI2023

Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing

Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.

42 ENGINEERING↗
DOE OSTI2025

Impact of high-temperature annealing on hafnia-silica composite coatings deposited via ion beam sputtering for high-peak power 1064 nm lasers

The maximum power handling fluence of high-peak and average power laser systems is often limited by the laser damage of the coatings on optical components. Furthermore, these multilayer dielectric coatings are limited in their maximum power handling due to laser-damage-prone defects in the lower optical bandgap, higher optical index material. Some of these defects can be mitigated by thermal annealing to high temperatures, which can greatly reduce the linear absorbative precursors. Typically, hafnia and silica are the materials of choice for high-peak and average power laser systems in the ultraviolet through infrared spectral range; however, hafnia crystalizes readily when annealed at high temperatures. In this study, we prepare composite HfO 2 -SiO 2 coatings by co-sputtering hafnia and silica in an ion beam sputtering system and compare them to pure hafnia-based coatings. We demonstrate that crystallinity in hafnia can be completely suppressed when it is mixed with silica, such as the composite coatings in this study. High reflectors were fabricated and annealed, demonstrating that the multilayer dielectric stacks can survive high-temperature annealing and exhibit an excellent linear absorption of 0.2 +/- 1 ppm at 1064 nm. Short- and long-pulse laser damage was explored, demonstrating the complex relationship between linear absorption and the non-linear absorption which drives pulsed laser damage. These results provide an excellent route to the creation of very low linear absorption optical coatings, which also utilize low scattering materials that are best suited for high-peak and average power applications.

Harthcock, Colin [Lawrence Livermore National Labo↗
DOE OSTI2020

Microstructure study of U–35 wt.% Zr alloy after quick annealing at 650 °C

Uranium-35wt.%zirconium (U-35wt.%Zr) alloy was annealed for 1 hour and 24 hours at 650 ºC and characterized to understand the early stage microstructure evolution. Dendritic microstructure with fine (~300 nm in length) α-U precipitates clustered between dendrite branches were observed in the 1-hour annealed sample. After 24-hour annealing 650 ºC, the α-U precipitates coarsened, and the dendritic microstructure disappeared due to microstructure homogenization. Furthermore, microchemical homogenization observed with Energy-Dispersive X-ray Spectroscopy analysis suggests that α-U precipitates are approaching thermodynamic equilibrium in the 24-hour annealed sample. The findings from this study have potential impacts on the manufacturing and computer modeling of metallic nuclear fuel.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Surface properties and RF performance of Vapor Diffused Nb3Sn on Nb after sequential anneals below 1000 °C

Nb3Sn is a next-generation superconducting material that can be used for future superconducting radiofrequency (SRF) accelerator cavities, promising better performance, cost reduction, and higher operating temperature than Nb. The Sn vapor diffusion method is currently the most preferred and successful technique to coat niobium cavi-ties with Nb3Sn. Among post-coating treatments to opti-mize the coating quality, higher temperature annealing without Sn is known to degrade Nb3Sn because of Sn loss. We have investigated Nb3Sn/Nb samples briefly annealed at 800-1000 °C for 10 and 20 minutes to poten-tially improve the surface to enhance the performance of Nb3Sn-coated cavities. Following the sample studies, a coated single-cell cavity was sequentially annealed at 900 °C and tested its performance each time, improving the cavity's quality factor relatively. This paper summarizes the sample studies and discusses the RF test results from sequentially annealed SRF Nb3Sn/Nb cavity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Impact of Annealing on the Chemical and Superconducting Properties of Ta Thin Films

Tantalum thin films are annealed to dissolve the surface oxide. The effect of annealing is studied using material characterization tools, XPS and TOF-SIMS, and electrical transport measurements of the annealed films are taken using standard PPMS methods to correlate with the surface chemistry. Annealing dissociates the surface oxide, and the oxygen produced diffuses into the thin film. The introduction of oxygen reduces the quality of the thin film, as shown by the suppression of Tc and a reduction in RRR.

Shinde, Maithilee [IIT, Chicago]↗
DOE OSTI2021

Fabrication of Flexible Perovskite Solar Cells via Rapid Thermal Annealing

Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic market. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Rapid thermal annealing (RTA), a radiative method, is utilized on roll-to-roll lines within many different industries and has shown promising potential for perovskite annealing. Here, we introduce a blade-coated perovskite thin film on flexible ITO-coated PET annealed via RTA that reduces post-deposition processing time from ~150 seconds to ~14 seconds. Performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.

Martin, Blake↗
DOE OSTI2023

Surface Properties and RF Performance of Vapor Diffused Nb3Sn on NB After Sequential Anneals Below 1000°C

Nb3Sn is a next-generation superconducting material that can be used for future superconducting radiofrequency (SRF) accelerator cavities, promising better performance, cost reduction, and higher operating temperature than Nb. The Sn vapor diffusion method is currently the most preferred and successful technique to coat niobium cavi-ties with Nb3Sn. Among post-coating treatments to opti-mize the coating quality, higher temperature annealing without Sn is known to degrade Nb3Sn because of Sn loss. We have investigated Nb3Sn/Nb samples briefly annealed at 800-1000°C for 10 and 20 minutes to poten-tially improve the surface to enhance the performance of Nb3Sn-coated cavities. Following the sample studies, a coated single-cell cavity was sequentially annealed at 900°C and tested its performance each time, improving the cavity's quality factor relatively. This paper summarizes the sample studies and discusses the RF test results from sequentially annealed SRF Nb3Sn/Nb cavity.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Considerations for Thermal Annealing of Zr-Alloy Cladding During Dry Storage

In January 2025, the U.S. Department of Energy (DOE) sponsored a technical workshop with fuel vendors that provided a forum for increased collaboration on backend fuel cycle research. The workshop reviewed observations of thermal annealing of irradiated zirconium alloys in simulated dry storage conditions and discussed implications to the industry’s interest in reducing wet storage to optimize operational flexibility and the expected trend of increasing discharge burnup (and decay heats), which could lead to an increase in dry storage temperatures. One approach to accommodate increased decay heats in dry storage is to increase the regulatory temperature limit during dry storage, which is now 400°C. However, this could lead to thermal annealing of the cladding, which will tend to increase creep rates, creep strains, and ductility while decreasing yield strength. These considerations are compounded by bonding between the pellet and cladding at high burnup, which results in the pellet carrying more load during fuel rod deformations, especially in bending, which is the dominant deformation phenomenon in canister drop analyses. Because the U.S. Nuclear Regulatory Commission (NRC) recommends yield strength as a primary failure criterion for accident analyses in storage and transportation, particularly for canister drop scenarios, the purpose of the workshop was to develop options for alternative failure criterion that could replace yield strength in canister drop analyses. Topics discussed were (1) the regulatory framework, (2) the effect of thermal annealing on microhardness and tensile properties of cladding materials, (3) the effect of thermal annealing on fuel rod failure during bending, bending fatigue, and pinch loading, and (4) an alternative failure criterion for canister drop analyses. This paper provides a summary of the key discussions and outcomes of the workshop

Cantonwine, Paul [ORNL] (ORCID:0009000522247033)↗
DOE OSTI2024

Short-depth QAOA circuits and quantum annealing on higher-order ising models

Abstract We present a direct comparison between QAOA (Quantum Alternating Operator Ansatz), and QA (Quantum Annealing) on 127 qubit problem instances. QAOA with p = 1, 2 rounds is executed on the 127 qubit heavy-hex graph gate-model quantum computer ibm_washington, using on-device grid-searches for angle finding, and QA is executed on two Pegasus-chip D-Wave quantum annealers. The problems are random Ising models whose connectivity matches heavy-hex graphs and the Pegasus graph connectivity, and optionally include hardware-compatible cubic terms ( Z Z Z terms). The QAOA circuits are heavily optimized and of extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of the heavy-hex lattice. QAOA and QA are both compared against simulated annealing and the optimal solutions are computed exactly using CPLEX. The noiseless mean QAOA expectation values for p = 1, 2 are computed using classical light-cone based simulations. We find QA outperforms QAOA on the evaluated devices.

127 qubits↗
DOE OSTI2025

Comparing quantum annealing and spiking neuromorphic computing for sampling binary sparse coding QUBO problems

We consider the problem of computing a sparse binary representation of an image. Given an image and an overcomplete, non-orthonormal basis, we aim to find a sparse binary vector indicating the minimal set of basis vectors that when added together best reconstruct the given input. We formulate this problem with an L 2 loss on the reconstruction error, and an L 0 loss on the binary vector enforcing sparsity. First, we solve the sparse representation QUBOs by solving them both on a D-Wave quantum annealer with Pegasus chip connectivity, as well as on the Intel Loihi 2 spiking neuromorphic processor using a stochastic Non-equilibrium Boltzmann Machine (NEBM). Second, using Quantum Evolution Monte Carlo with Reverse Annealing and iterated warm starting on Loihi 2 to evolve the solution quality from the respective machines. We demonstrate that both quantum annealing and neuromorphic computing are suitable for solving binary sparse coding QUBOs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Toward computing bounds for Ramsey numbers using quantum annealing

Quantum annealing is a powerful tool for solving and approximating combinatorial optimization problems, such as graph partitioning, community detection, centrality, routing problems, and more. In this paper we explore the use of quantum annealing as a tool for use in exploring combinatorial mathematics research problems. We consider the monochromatic triangle problem and the Ramsey number problem, both examples of graph coloring. Conversion to quadratic unconstrained binary optimization (QUBO) form is required to run on quantum hardware. While the monochromatic triangle problem is quadratic by nature, the Ramsey number problem requires the use of order reduction methods for a quadratic formulation. The goal is to provide a method for producing special colorings of graphs which if successful would provide lower bounds for certain Ramsey numbers. We discuss implementations, limitations, and results when running on the D-Wave Advantage quantum annealer.

97 MATHEMATICS AND COMPUTING↗