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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.
The NASA Psyche mission is set to explore an asteroid located between Mars and Jupiter with a launch date in 2022. On-board the Psyche spacecraft is experimental demonstrator technology that will allow scientists to explore the capabilities of optical communications – a program called Deep Space Optical Communication (DSOC) led by Jet Propulsion Laboratory (JPL). DSOC seeks to improve communications performance by developing a space-based Flight Laser Transceiver (FLT) and a ground-based transceiver to enable photon-efficient communications with equipment in deep space. An integral part to this FLT system is a high-efficiency photon-counting camera (PCC) that is able to detect both the 1064nm uplink/beacon laser photons and 1550nm downlink laser photons with low background noise, and is capable of withstanding the rigors of space-travel. The paper details the characterization of several asynchronous Geiger-Mode Avalanche Photodiode (GmAPD) arrays developed by MIT Lincoln Laboratory for use in the PCC- specifically evaluating the temperature dependence of background noise, photon detection efficiency at 1064nm and 1550nm wavelengths, pixel lifetime testing, and angle of acceptance measurements. The results of this characterization are used to determine the nominal conditions for the device to operate in while in flight to maintain an efficient link with the ground-based transceiver.
Wind spacecraft measurements are analyzed to obtain a current sheet (CS) normal width dcs-distribution of 3374 confirmed magnetic reconnection exhausts in the ecliptic plane of the solar wind at 1 AU. The dcs-distribution displays a nearly exponential decay from a peak at dcs=25 di to a median at dcs=85 di and a 95th percentile at dcs=905 di with a maximum exhaust width at dcs=8077 di. A magnetic field ϴ-rotation angle distribution increases linearly from a relatively few high-shear events toward a broad peak at 35o<ϴ<65o. The azimuthal φ-angles of the CS normal directions of 430 thick dcs≥500 di exhausts are consistent with a dominant Parker-spiral magnetic field and a CS normal along the ortho-Parker direction. The CS normal orientations of 370 kinetic-scale dcs<25 di exhausts are isotropic in contrast, and likely associated with Alfvénic solar wind turbulence. We propose that the alignment of exhaust normal directions from narrow dcs~15-25 di widths to well beyond dcs~500 di with an ortho-Parker azimuthal direction of a large-scale HCS is a consequence of CS bifurcation and turbulence within the HCS exhaust that may trigger reconnection of the adjacent pair of bifurcated CSs. The proposed HCS-31 avalanche scenario suggests that the underlying large-scale parent HCS closer to the Sun evolves with heliocentric distance to fracture into many, more or less aligned, secondary current sheets due to reconnection. A few wide exhaust-associated HCS-like CSs could represent a population of HCSs that failed to reconnect as frequently between the Sun and 1 AU as other HCSs.
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A discussion of structural parameters that may heighten radiation sensitivity is presented, including doping levels and p-n junction termination techniques.
Scanning electron microscopy applications in study of thermal runaway in multi-emitter power transistors
Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.
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There are no author-identified significant results in this report.
The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.
An experiment to determine the effect of sonic booms on the stability of the snow mantle in the Lavey Valley is proposed. It includes provisions for the aircraft trajectory, line of fucus, boom zone, as well as the determination of boom intensity levels for the whole valley.
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A sharp transition from a solar wind proton dominated flow to a plasma population primarily consisting of relatively cold cometary heavy ions has been observed at a cometocentric distance of about 160,000 km by the VEGA and GIOTTO missions. This boundary (the cometopause) was thought to be related to charge transfer processes, but its location and thickness are inconsistent with conventionally estimated ion - neutral coupling boundaries. In this paper a two-fluid model is used to investigate the major physical processes at the cometopause. By adopting observed comet Halley parameters the model is able to reproduce the location and the thickness of this charge exchange boundary.
Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.