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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone and Microgravity

A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.

Schweizer, Markus↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several earlier (micro)g experiments have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed on the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Maran-goni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies f? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity

USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗
NASA NTRS2000

Fluid Physics and Macromolecular Crystal Growth in Microgravity

The molecular structure of biological macromolecules is important in understanding how these molecules work and has direct application to rational drug design for new medicines and for the improvement and development of industrial enzymes. In order to obtain the molecular structure, large, well formed, single macromolecule crystals are required. The growth of macromolecule crystals is a difficult task and is often hampered on the ground by fluid flows that result from the interaction of gravity with the crystal growth process. One such effect is the bulk movement of the crystal through the fluid due to sedimentation. A second is buoyancy driven convection close to the crystal surface. On the ground the crystallization process itself induces both of these flows. Buoyancy driven convection results from density differences between the bulk solution and fluid close to the crystal surface which has been depleted of macromolecules due to crystal growth. Schlieren photograph of a growing lysozyme crystal illustrating a 'growth plume' resulting from buoyancy driven convection. Both sedimentation and buoyancy driven convection have a negative effect on crystal growth and microgravity is seen as a way to both greatly reduce sedimentation and provide greater stability for 'depletion zones' around growing crystals. Some current crystal growth hardware however such as those based on a vapor diffusion techniques, may also be introducing unwanted Marangoni convection which becomes more pronounced in microgravity. Negative effects of g-jitter on crystal growth have also been observed. To study the magnitude of fluid flows around growing crystals we have attached a number of different fluorescent probes to lysozyme molecules. At low concentrations, less than 40% of the total protein, the probes do not appear to effect the crystal growth process. By using these probes we expect to determine not only the effect of induced flows due to crystal growth hardware design but also hope to optimize crystallization hardware so that destructive flows are minimized both on the ground and in microgravity.

Pusey, M.↗
NASA NTRS1984

High-purity silicon crystal growth

Crystal growth parameter effects on minority carrier lifetime and solar cell efficiencies were investigated using high purity techniques such as float zoning. Study objectives include the following: (1) optimize dopants and minority carrier lifetime in FZ material for high efficiency silicon solar cell applications; (2) improve the understanding of lifetime degradation mechanisms (point defects, impurities, thermal history, surface effects, etc.), and (3) crystallographic defect characterization of float zone and ribbon crystals via X-ray topography.

Ciszek, T.↗
NASA NTRS1982

Recharging the Silicon Crucible in a Hot Furnace

"Melt recharger" adds raw silicon to crucible in crystal-growing furnace without disturbing inert-gas atmosphere or significantly lowering temperature of melt. Crucible-refill hopper is lowered into hot zone of crystal-pulling chamber through an isolation valve. Cable that supports hopper is fastened to cone-shaped stopper in bottom of hopper. Stopper moves out of opening in hopper, allowing part of polysilicon charge to drop into crucible.

Lane, R. L.↗
NASA NTRS1984

The origin and significance of reverse zoning in melilite from Allende Type B inclusions

Many of Type B Allende inclusions are found to have reverse zoning over restricted portions of each crystal, in contrast to those in Type A's, which are reversely zoned throughout. Results of dynamic crystallization experiments on compositions similar to an average Type B inclusion are reported in which reversely zoned melilite rims were grown on normally zoned cores. The fact that these zoning patterns have been duplicated is interpreted as evidence that natural melilites having such zoning were formed by crystallization from a melt. Since reverse zoning could only be produced over a restricted range of experimental conditions, the presence in natural inclusions of the kinds of zoning patterns described here may place constraints on the conditions under which the inclusions formed.

Macpherson, G. J.↗
NASA NTRS1982

Electromigration process for the purification of molten silicon during crystal growth

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. The edge-defined film-fed crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities, migrated to one side only of the crystal ribbon, may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Shlichta, P. J.↗
NASA NTRS1989

Identification of relict phases in a once-molten Allende inclusion

Fassaite rims around spinel grains that are enclosed entirely by normally zoned cores of melilite crystals are interpreted as relict grains which predate the melting of Allende type B1 refractory inclusions. Nonrelict subliquidus fassaite did not begin crystallizing from melts of these compositions until the onset of precipitation of the reversely zoned melilite mantles around the same melilite crystal cores. Relict fassaite is fractionated and highly enriched in REE and other refractory lithophiles compared to subliquidus fassaite in the same inclusion. Mass balance suggests that the relict fassaite represents only 3 percent of the original premelt amount of fassaite, and that melilite and at least one other phase were additional condensate precursors of these inclusions.

Kuehner, Scott M.↗
NASA NTRS1985

Fluid Flow in Crystal Growth: Analysis of the Verticle Bridgman and Floating Zone Process

Research is aimed at the fundamental understanding of the interactions of heat and mass transport and fluid mechanics in crystal growth from the melt, especially in how it pertains to experiments supported by the Microgravity Science and Applications program. Emphasis has been on studies of the vertical Bridgman system, on small-scale floating zone systems proposed for space flight, and on quantitative prediction of nonlinear transitions in melt/solid interface morphologies leading to the formation of dendrites in directional solidification. The analysis of vertical Bridgman growth has lead to the complete numerical analysis of transport phenomena in directional solidification and to a detailed comparison of calculations to the GaGe growth experiments of Wang and Witt. Calculations show the central role of the ampoule material in determining the radial temperature gradients in the melt and thus, the intensity of convection. Results indicate that diffusion-controlled growth can not be achieved on Earth with conventional growth systems, but are feasible in microgravity

Brown, R. A.↗
NASA NTRS1997

Flow and Crystallization in Two-Layer Liquid Systems with and without a Magnetic Field

Flow, heat and mass transfer in a two-layer liquid system is investigated when the layers are subjected to a static magnetic field. The physical system consists of two immiscible liquids in a layer configuration with a free surface and an interfacial layer simulating two crystal growth configurations, namely, floating zone and horizontal zone melting. Mass transfer effects due to crystallization of one of the layers is also considered. The resulting flows are categorized into three types depending on: (a) the dominance of the free surface effect top layer, (b) a balance between the thermocapillary effect on the free surface and the interface effect between the two layers, or (c) the dominance of interfacial effects, in determining the system thermo-fluid characteristics. The use of an additional liquid layer atop the crystallizing layer leads to a reduction of the radial dopant inhomogeneity in comparison to the one-layer case. The effect an externally imposed magnetic field on dopant distribution in this two-layer configuration is rather ambiguous and depends on its direction and intensity resulting in the necessity of optimizing the applied magnetic field for a specific situation. In case of electrically non-conducting melts, the calculations show that some measure of flow control can be achieved by using an electrically conducting encapsulant layer of the desired thickness.

Feonychev, Alexander I.↗
NASA NTRS1975

Analytics of crystal growth in space

The variation of radial impurity distribution induced by surface tension driven flow increases as the zone length decreases in silicon crystals grown by floating zone melting. In combined buoyancy driven and surface tension driven convection at the gravity of earth, the buoyancy contribution becomes relatively smaller as the zone diameter decreases and eventually convection is dominated by the surface tension driven flow (in the case of silicon, for zones of less than about 0.8 cm in diameter). Preliminary calculations for sapphire suggest the presence of an oscillatory surface tension driven convection as a result of an unstable melt surface temperature that results when the zone is heated by a radiation heater.

Chang, C. E.↗
NASA NTRS1975

Solar concentrators for space processing applications

A study on the technological feasibility of using solar concentrators for crystal growth and zone refining in space has been performed. Previous studies related to the many aspects of the problem are reviewed. It was concluded from this effort that the technology for fabricating, orbiting, and deploying large solar concentrators has been developed. It was also concluded that the technological feasibility of space processing materials in the focal region of a solar concentrator depends primarily on two factors: (1) the ability of a solar concentrator to provide sufficient thermal energy for the process and (2) the ability of a solar concentrator to provide a thermal environment that is conducive to the processes of interest. The study indicates that solar concentrators of reasonable dimensions can satisfactorily provide both of these factors. This study also indicates that solar concentrators are attractive for space processing from the viewpoint of system specific power and system flexibility.

Mcdermit, J. H.↗
NASA NTRS1985

High purith low defect FZ silicon

The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

Kimura, H.↗
NASA NTRS1986

Materials processing in space - Review of the early experiments

Basic research performed to study various aspects of fluid behavior in a microgravity environment during the first two decades of spaceflight is described. The uniqueness of space was recognized in the 1950s as a place where buoyancy-driven convective flows and sedimentation would effectively be absent. The conditions were favorable for experiments in crystal growth, alloy solidification, combustion, thermocapillary flows, electroosmotic flows, Stefan flows, Soret diffusion, and solidification processes. Pre-Skylab NASA drop tower experiments and Apollo 14 and 17 experiments made in preparation for Skylab are described. Skylab welding and brazing, crystal growth, metallurgy and liquid float zone trials and Apollo-Soyuz crystal growth, electrophoresis and metallurgical experiments are summarized. SPAR rocket trials along similar lines are also outlined.

Naumann, Robert J.↗