Search NASA⌕ Search

SEARCH · Search NASA

Results for “defect passivation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Vertical β -Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.

Physics↗

Utilizing Ultraviolet Photons to Generate Single-Photon Emitters in Semiconductor Monolayers

The understanding and controlled creation of atomic defects in semiconductor transition metal dichalcogenides (TMDs) are highly relevant to their applications in high-performance quantum optics and nanoelectronic devices. Here, we demonstrate a versatile approach in generating single-photon emitters in MoS 2 monolayers using widely attainable UV light. We discover that only defects engendered by UV photons in vacuum exhibit single-photon-emitter characteristics, whereas those created in air lack quantum emission attributes. In combination with theoretical calculations, we assign the defects generated in vacuum to unpassivated sulfur vacancies, whose highly localized midgap states give rise to single-photon emission. In contrast, UV irradiation of the MoS 2 monolayers in air results in oxygen-passivated sulfur vacancies, whose optical properties are likely governed by their pristine band-to-defect band optical transitions. Furthermore, these findings suggest that widely available light sources such as UV light can be utilized for creating quantum photon sources in TMDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

In-situ ETEM study of plasma-facing tungsten nanofuzz oxidation at atmospheric pressure: Microstructure evolution and substrate-free oxidation kinetics

To enable sustainable carbon-free fusion energy, managing reactor structural material degradation during normal operation as well as accident scenarios is vital. Tungsten (W) plasma-facing materials (PFMs) are susceptible to aggressive high-temperature oxidation during air-ingress fusion reactor accidents, yet there's a lack of oxidation kinetic data for irradiated tungsten. Here, in this study, we utilize atmospheric environmental transmission electron microscopy (ETEM) to present the first kinetic data for substrate-free W nanofuzz oxidation at 400 ºC and 500 ºC in 1 bar dry air. Comparison with pristine bulk W during the early parabolic stage suggests an irradiationdecelerated oxidation for W nanofuzz. Our time-resolved in-situ characterization reveals a durable amorphous surface oxide, likely promoted by high-flux He + irradiation-induced surface defects, serving as an effective passivating layer that impedes nanofuzz oxidation onset. This surface oxide layer also interfaces well with newly formed orthorhombic WO 3 , facilitated by stress relief through He bubble shrinkage, providing lasting passivating protection throughout the nanofuzz parabolic oxidation. This new finding challenges conventional notions of irradiation's negative impact on metal oxidation, and calls for advanced characterization to enhance our understanding of fusion energy materials degradation, informed by further accident modeling.

36 MATERIALS SCIENCE↗

In-Process Monitoring and Structural Health Monitoring of Large-Scale Additive Manufacturing Using Acoustic Emission Technique

ORNL collaborated with MISTRAS Group, Inc. to investigate acoustic emission (AE) as a structural health monitoring (SHM) method for large-scale additive manufacturing (AM). Large-scale AM is being adapted as method of producing large structures in a short lead time and cost-effective way. With the growing advancement in AM techniques and application, machine monitoring and part qualification is highly needed. There has been leading research focused on the manufacturing, feedstock material but minimum research on the SHM, defect detection, and nondestructive evaluation (NDE) for AM. Scanning large structure using conventional nondestructive testing (NDT) techniques, such as ultrasound or X-ray, and searching for potential defects can be very time consuming, challenging and cost prohibitive. AE is a passive technique that can be used to monitor and locate defect progression in large structure by distributing group of sensors around the part. This project utilized AE technique and system manufactured/designed by MISTRAS Group to monitor large-scale AM equipment (i.e. Big Area Additive Manufacturing (BAAM) system located at the Oak Ridge National Laboratory – Manufacturing Demonstration Facility (ORNL-MDF) and the printed parts it produces. The AE system provided valuable insight on defect development/progression during and post-printing process.

36 MATERIALS SCIENCE↗

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga 2 O 3 with neutron irradiation and forming gas anneals

The gallium vacancy is one of the dominant native point defects in β-Ga 2 O 3 , one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga 2 O 3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga 2 O 3 .

42 ENGINEERING↗

Polymer Passivated All Inorganic Micro‐Structured CsPbI x Br y Perovskite Toward Highly Efficient Photodetectors

Abstract Solution‐processed inorganic perovskites cause chemical and structural defects unfavorable for photodetector application. Using a binary solvent, defects in CsPbI x Br y (CPIB) perovskite are passivated with poly 4‐vinylpyridine (PVP) and Poly methyl methacrylate (PMMA) polymers. X‐ray photoelectron spectroscopy and FTIR spectra reveal a Lewis base‐acid interaction between Pb 2+ and polymer, confirming the passivation of CPIB perovskite. Scanning electron microscopy analysis shows a dual‐surface morphology with microribbons and microcrystals in perovskites. After PMMA treatment, CPIB perovskite exhibits a blue shift in the bandgap (1.8 to 1.95 eV), while the PVP induced a redshift, reducing the bandgap to 1.7 eV. Blue shift in PL analysis indicates modification of grain boundaries. A higher lifetime obtained for CPIB/PVP confirms the restraint of non‐radiative recombinations. Photodetectors are fabricated with pristine CPIB, CPIB/PVP, and CPIB/PMMA perovskites. The passivated CPIB/PVP‐based photodetector exhibits a quick rise time of ≈23 ms and a decay time of ≈17 ms. It also demonstrates a remarkable photoresponsivity of 23 mA W −1 , an internal quantum efficiency of 4.9%, and a detectivity of 15.0 × 10 10 Jones at 10 mW cm −2 light intensity. This approach shows the potential for environmentally stable polymers to passivate inorganic perovskites for high photodetection performance.

Shah, Shruti↗

Enhancement of the ultraviolet photoluminescence of ZnO films: Coatings, annealing, and environmental exposure studies

To realize the many potential applications of ZnO films, it is vital to produce films with high optical quality that exhibit strong UV luminescence. By combining annealing at an optimal temperature followed by the deposition of a coating, one can achieve a significant enhancement of photoluminescence (PL). The effectiveness of the coating over time is a crucial point to be considered. Three types of coating materials were investigated: MgO, SiO 2 , and Al 2 O 3 . Due to its strong bond energy, MgO was found to be the most effective coating material for passivation of the surfaces of the ZnO films; SiO 2 was the second best. The UV-PL intensity of MgO coated ZnO was found to increase by a factor of 52 relative to an uncoated film. The effectiveness of the coatings exhibited a linear correlation with their bond energies and is discussed in terms of competing mechanisms to surface passivation such as the adsorption of OH-groups; these can act as surface traps and diminish the UV-PL intensity. Annealing at 900 °C prior to the deposition of the coating was found to be an important step in realizing the optimal performance of the coating due to the reduction of Zn interstitials accompanied by improved crystallinity. Exposure to the environment, up to 294 days, results in the degradation of the UV-PL of the MgO coated film; this effect was not observed for the film coated with SiO 2 . This effect is discussed in terms of the strong reactivity of MgO with environmental contaminants from the OH-groups.

36 MATERIALS SCIENCE↗

All-perovskite tandem solar cells with improved grain surface passivation

All-perovskite tandem solar cells hold the promise of surpassing the efficiency limits of single-junction solar cells; however, until now, the best-performing all-perovskite tandem solar cells have exhibited lower certified efficiency than have single-junction perovskite solar cells. A thick mixed Pb–Sn narrow-bandgap subcell is needed to achieve high photocurrent density in tandem solar cells, yet this is challenging owing to the short carrier diffusion length within Pb–Sn perovskites. Here we develop ammonium-cation-passivated Pb–Sn perovskites with long diffusion lengths, enabling subcells that have an absorber thickness of approximately 1.2 μm. Molecular dynamics simulations indicate that widely used phenethylammonium cations are only partially adsorbed on the surface defective sites at perovskite crystallization temperatures. The passivator adsorption is predicted to be enhanced using 4-trifluoromethyl-phenylammonium (CF3-PA), which exhibits a stronger perovskite surface-passivator interaction than does phenethylammonium. By adding a small amount of CF3-PA into the precursor solution, we increase the carrier diffusion length within Pb–Sn perovskites twofold, to over 5 μm, and increase the efficiency of Pb–Sn perovskite solar cells to over 22%. Here, we report a certified efficiency of 26.4% in all-perovskite tandem solar cells, which exceeds that of the best-performing single-junction perovskite solar cells. Encapsulated tandem devices retain more than 90% of their initial performance after 600 h of operation at the maximum power point under 1 Sun illumination in ambient conditions.

14 SOLAR ENERGY↗

Long-Term Degradation of Passivated Emitter and Rear Contact Silicon Solar Cell under Light and Heat

Advanced designs enable high-efficiency solar cells; however, more complex structures create new long-term stability concerns. Herein, the long-term degradation processes affecting advanced silicon solar cells using laboratory-based illumination and heating over hundreds of hours are investigated. The activation energy for the degradation of voltage is estimated and the degradation rates to normal solar cell operating temperature ranges are extrapolated. The cell degradation observed at high temperatures in the lab is kinetically similar to the process affecting field-deployed modules contributing to 0.37% year-1 of annualized degradation. Electroluminescence and photoluminescence mapping show that the degradation is dominated by minority carrier lifetime reduction. Suns-open-circuit voltage and light beam-induced current results indicate that the degradation could result from passivation degradation at the surface or defect formation in the near-subsurface region, leading to increased minority carrier recombination. This work highlights a long-term degradation process under elevated temperature and illumination that may continue to affect cells in an irreversible manner that is separate from recoverable light-induced degradation and light- and elevated temperature-induced degradation.

14 SOLAR ENERGY↗

Vortex Lattices in Active Nematics with Periodic Obstacle Arrays

Here, we numerically model a two-dimensional active nematic confined by a periodic array of fixed obstacles. Even in the passive nematic, the appearance of topological defects is unavoidable due to planar anchoring by the obstacle surfaces. We show that a vortex lattice state emerges as activity is increased, and that this lattice may be tuned from “ferromagnetic” to “antiferromagnetic” by varying the gap size between obstacles. We map the rich variety of states exhibited by the system as a function of distance between obstacles and activity, including a pinned defect state, motile defects, the vortex lattice, and active turbulence. We demonstrate that the flows in the active turbulent phase can be tuned by the presence of obstacles, and explore the effects of a frustrated lattice geometry on the vortex lattice phase.

36 MATERIALS SCIENCE↗

Applying Acoustic Emission to Large Format Additive Manufacturing

Large format additive manufacturing (AM) is being adapted as a method of producing large structures in a short lead time and cost-effective way. With the growing advancement in AM techniques and application, machine monitoring and part qualification is highly needed. There has been leading research focused on the manufacturing development and feedstock material but minimum research on the structural health monitoring (SHM), defect detection, and nondestructive evaluation (NDE) for large format AM. Scanning large structure using conventional nondestructive testing (NDT) techniques, such as ultrasound or X-ray, and searching for potential defects can be very time consuming, challenging and cost prohibitive. Acoustic emission (AE) is a passive technique that can be used to monitor and locate defect progression in large structures by distributing group of sensors around the part. This research outlines the necessary procedure for implementing AE to AM as a reliability method. The topics this research will display are: (a) Wave propagation/velocity evaluation, (b) an AE attenuation characterization for the anisotropic printed structure and material, (c) background noise measurements of the extruder and gantry system, and (d) assist in optimal sensor selection and placement for monitoring large AM structures with demonstration. This work establishes the foundation for scaling up the SHM-AE system for the large additive platform.

Spencer, Ryan↗

Passive Oxide Film Growth Observed On the Atomic Scale

Despite of the ubiquitous presence of passivation on most metal surfaces, the microscopic-level picture of how surface passivation occurs has been hitherto unclear. Using the canonical example of the surface passivation of aluminum, here we employ in situ atomistic transmission electron microscopy observations and computational modeling to disentangle entangled microscopic processes and identify the atomic processes leading to the surface passivation. Based on atomic-scale observations of the layer-by-layer expansion of the metal lattice and its subsequent transformation into the amorphous oxide, it is shown that the surface passivation occurs via a two-stage oxidation process, in which the first stage is dominated by intralayer atomic shuffling whereas the second stage is governed by interlayer atomic disordering upon the progressive oxygen uptake. The first stage can be bypassed by increasing surface defects to promote the interlayer atomic migration that results in direct amorphization of multiple atomic layers of the metal lattice. The identified two-stage reaction mechanism and the effect of surface defects in promoting interlayer atomic shuffling can find broader applicability in utilizing surface defects to tune the mass transport and passivation kinetics, as well as the composition, structure and transport properties of the passivation films.

25 ENERGY STORAGE↗

On the surface passivating principle of functional thiol towards efficient and stable perovskite nanocrystal solar cells

Inorganic halide perovskite nanocrystals (PNCs) have demonstrated promising potential for solar cell applications. However, the lability of photoactive CsPbI3 phase under ambient conditions, coupled with considerable amounts of surface defects induced during solidification process, have impeded achieving high performances and longevities of the PNC-based solar cells. Post-treatment of the PNCs with organic ligands has been proposed as an efficient strategy for surface passivation, which, however, still relies on the binding actions of typical functional groups towards surface defects (especially, carboxylates onto iodine vacancies). Herein, we uncover that thiolate, a deprotonated form of thiol, renders distinctive binding feasibility towards iodine vacancies at the CsPbI3 PNC surface, compared with those of typical functional groups. By treating the PNC solid with deprotonated cysteine as a ligand, the surface defects are comprehensively passivated. The solar cells with the modified PNC films demonstrate an excellent PCE of 15.5 % and improved device longevity (77 % of initial PCE over 2 months) under ambient conditions. Our work not only elucidates the chemical principles of thiol on the binding with PNC surface, but also corroborates the power of thiolate as a promising strategy to develop high performances and improved longevity of solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗

High-Temperature Nucleation of GaP on V-Grooved Si

The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface pretreatments on the nucleation of GaP on v-grooved Si in a high-temperature regime, which offers the promise of a defect-free GaP/Si interface favorable for Si passivation and dislocation glide in the GaP. X-ray photoelectron spectroscopy was used to understand the Si surface chemistry prior to nucleation, and transmission electron microscopy was used to probe material quality of the nuclei. Temperature and V/III ratio were found to control the facet selectivity of nucleation. We demonstrate a condition of high temperature and high V–III ratio that leads to uniform nucleation at the bottom of the trenches, with initial material free of nucleation-related interfacial defects. This optimized condition was then shown to coalesce into a thin film after additional growth.

36 MATERIALS SCIENCE↗

Electrochemical techniques and mechanisms for the corrosion of metals and alloys in sub- and supercritical aqueous systems

Corrosion has become a decisive factor hindering supercritical water technologies' long-cycle, safe implementation. Electrochemical experiments performed in supercritical aqueous systems can capture essential, real-time information about the micro/nanoscale processes of corrosion and their kinetics. As a starting point, this paper first summarizes the critical chemical properties of supercritical aqueous systems and analyzes their role in determining the duality of corrosion mechanisms (whether electrochemical or chemical micro-processes predominate). Next, it reviews the available electrochemical techniques such as pH sensors, electrochemical noise measurements, and related applications for quantitatively elaborating the corrosion issues in supercritical aqueous systems. With thick and heavy colors, a series of mechanistic models, such as the mixed potential model and the coupled environment models were introduced from the fundamental theories to the related applications, which have been applied widely in ambient and subcritical aqueous systems and exhibit great values and potential to be employed in high-density supercritical water environments. The passivity, depassivation, and passivity breakdown of metals and alloys in terms of the Point Defect Model (PDM) were also successfully implemented and discussed. Further, the newly built SCW_PDM describes the film growth kinetics at the atomic level of metals and alloys in supercritical water and is being developed to quantitatively analyze and resolve a series of corrosion issues such as the passivity breakdown and the stress corrosion cracking that occur in supercritical aqueous systems. This review is helpful by promoting the development of the electrochemical corrosion theory in supercritical aqueous systems and by identifying corrosion prevention and control methods for the safe implementation of relevant supercritical water technologies.

36 MATERIALS SCIENCE↗

Microstructural dependence of defect formation in iron-oxide thin films

In this report passivating iron-oxide films are grown atop iron films simulating the corrosion process in a nuclear reactor environment. Two oxide films grown via physical vapor deposition at 600 °C and room temperature exhibited dense-epitactic and columnar-polycrystalline, microstructures respectively. A third oxide film grown in open air at 600 °C exhibited an eqiuaxed, porous morphology. Cubic maghemite and magnetite phases in each oxide film were identified via grazing incidence X-ray diffraction. Positron annihilation spectroscopy was used to characterize point defects and measure their depth and size distributions in each oxide layer and showed a range of average positron lifetimes from 0.23 ns in the high temperature, vapor deposited film, 0.35 ns in the room temperature-grown film, and 0.31 ns in the thermally grown oxide. These data indicate that the film morphology, which varies greatly in these films, leads to very different defect content. Finally, four-dimensional scanning transmission electron microscopy was used to measure the internal stress of each film and was correlated to the strain state presented in the X-ray diffraction spectra. The defect formation in each film is reasoned through using a thin film growth model.

36 MATERIALS SCIENCE↗

Atomic motifs govern the decoration of grain boundaries by interstitial solutes

Abstract Grain boundaries, the two-dimensional defects between differently oriented crystals, tend to preferentially attract solutes for segregation. Solute segregation has a significant effect on the mechanical and transport properties of materials. At the atomic level, however, the interplay of structure and composition of grain boundaries remains elusive, especially with respect to light interstitial solutes like B and C. Here, we use Fe alloyed with B and C to exploit the strong interdependence of interface structure and chemistry via charge-density imaging and atom probe tomography methods. Direct imaging and quantifying of light interstitial solutes at grain boundaries provide insight into decoration tendencies governed by atomic motifs. We find that even a change in the inclination of the grain boundary plane with identical misorientation impacts grain boundary composition and atomic arrangement. Thus, it is the smallest structural hierarchical level, the atomic motifs, that controls the most important chemical properties of the grain boundaries. This insight not only closes a missing link between the structure and chemical composition of such defects but also enables the targeted design and passivation of the chemical state of grain boundaries to free them from their role as entry gates for corrosion, hydrogen embrittlement, or mechanical failure.

36 MATERIALS SCIENCE↗