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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

A point defect model for nickel electrode structures

The Raman spectra for nickel electrode active mass indicate a single formula-unit crystallographic unit cell of the layered NiOOH-type. Empirical stoichiometric formulas require that extensive point defects, cation dopants and nickel vacancies, be incorporated on nickel sites. Structural differences between the alpha/gamma and beta/beta cycles, and the influence of cobalt addition on the structure will be discussed in terms of the point defect model. Other empirical data supporting the point defect model will be considered.

Loyselle, Patricia L.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗
NASA NTRS2009

Chromosomal Aberrations in DNA Repair Defective Cell Lines: Comparisons of Dose Rate and Radiation Quality

Chromosome aberration yields were assessed in DNA double-strand break repair (DSB) deficient cells after acute doses of gamma-rays or high-LET iron nuclei, or low dose-rate (0.018 Gy/hr) gamma-rays. We studied several cell lines including fibroblasts deficient in ATM (product of the gene that is mutated in ataxia telangiectasia patients) or NBS (product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase, DNA-PK activity. Chromosomes were analyzed using the fluorescence in-situ hybridization (FISH) chromosome painting method in cells at the first division post-irradiation and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma radiation induced higher yields of both simple and complex exchanges in the DSB repair defective cells than in the normal cells. The quadratic dose-response terms for both chromosome exchange types were significantly higher for the ATM and NBS defective lines than for normal fibroblasts. However, the linear dose-response term was significantly higher only for simple exchanges in the NBS cells. Large increases in the quadratic dose response terms indicate the important roles of ATM and NBS in chromatin modifications that facilitate correct DSB repair and minimize aberration formation. Differences in the response of AT and NBS deficient cells at lower doses suggests important questions about the applicability of observations of radiation sensitivity at high dose to low dose exposures. For all iron nuclei irradiated cells, regression models preferred purely linear and quadratic dose responses for simple and complex exchanges, respectively. All the DNA repair defective cell lines had lower Relative biological effectiveness (RBE) values than normal cells, the lowest being for the DNA-PK-deficient cells, which was near unity. To further investigate the sensitivity differences for low and low high doses, we performed chronic low dose-rate irradiation, and have begun studies with ATM and Nibrin inhibitors and siRNA knockout of these proteins. Results support the conclusion that for the endpoint of simple chromosomal aberrations (translocation or dicentrics), the increased radiation sensitivity of AT cells found at high doses (>1 Gy) does not carry over to low doses or doserates, while NBS cells show increased sensitivity for both high and low dose exposures.

George, K. A.↗
NASA NTRS1978

Defect distribution near the surface of electron-irradiated silicon

The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.

Wang, K. L.↗
NASA NTRS1981

Detection of strength limiting defects in cellular glasses by dielectric measurements

The foamed glasses that are being considered for structural support in solar thermal energy system silvered glass concentrator mirrors are assessed for strength-limiting defects by a nondestructive technique which measures the capacitance of well defined regions. The feasibility of locating large defects is demonstrated for the case of one type of cellular mass. Observed capacitance variations are believed to be due to small voids or other irregularities in the material. If the defects are equal to or greater than approximately 20 times the glass matrix pore size, they can be resolved with sufficient accuracy to delineate their spatial extent.

Gammell, P. M.↗
NASA NTRS1974

The resistance to embrittlement by a hydrogen environment of selected high strength iron-manganese base alloys

Fe-16Mn and Fe-25Mn base alloys, which had been cold worked to yield strength levels of 201 and 178 KSI, were resistant to degradation of mechanical properties in a one atmosphere hydrogen environment at ambient temperature under the loading conditions employed in this investigation. Transmission electron microscopy established that bands of epsilon phase martensite and fcc mechanical twins were formed throughout the fcc matrix when these alloys were cold worked. In the cold worked alloys a high density of crystal defects were observed associated with both types of strain induced structures, which should contribute significantly to the strengthening of these alloys. High strength iron base alloys can be produced which appear to have some resistance to degradation of mechanical properties in a hydrogen environment under certain conditions.

Benson, R. B., Jr.↗
NASA NTRS1984

Effects of processing and microstructure on the fatigue behaviour of the nickel-base superalloy Rene95

Forms of the nickel-base superalloy Rene95 produced by three processing methods were evaluated in tensile, low cycle fatigue and fatigue crack propagation tests at 540 and 650 C. Two powder-metallurgy (PM) forms, hot-isostatically-pressed and extruded-and-forged, and a conventionally cast-and-wrought form were all given the same heat treatment. The extruded-and-forged form showed superior fatigue life in low strain range tests though the two PM forms exhibited nearly identical mechanical behavior in all other respects. Further, this life difference could not be explained by significant differences in the types, sizes or shapes of the defects initiating failure. The cast-and-wrought Rene95, however, had lower strength, ductility and fatigue life, but higher fatigue crack propagation resistance because of a larger grain size. It did not exhibit the environmentally-assisted intergranular mode of propagation which occurs in PM Rene95 and other fine-grained superalloys at these test temperatures and frequencies.

Miner, R. V.↗
NASA NTRS1990

Radiation damage in a Tektronix 512 CCD

A Tektronix CCD was subjected to a proton beam. Comparisons were made of the CCD characteristics before, during, and after radiation. Gain and readout noise were not affected and charge transfer efficiency, full well, and dark current were. Permanent CTE damage resulted immediately upon radiation, but full well damage developed two days after radiation, while the dark current showed signs of recovery before permanent damage occurred. Histogram analysis showed that the most spiky-type behavior resulted from damage to defects existing in the CCD before radiation.

Brown, Larry W.↗
NASA NTRS1995

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Weinberg, I.↗
NASA NTRS2008

Failure Analysis Study and Long-Term Reliability of Optical Assemblies with End-Face Damage

In June 2005, the NESC received a multi-faceted request to determine the long term reliability of fiber optic termini on the ISS that exhibited flaws not manufactured to best workmanship practices. There was a lack of data related to fiber optic workmanship as it affects the long term reliability of optical fiber assemblies in a harsh environment. A fiber optic defect analysis was requested which would find and/or create various types of chips, spalls, scratches, etc., that were identified by the ISS personnel. Once the defects and causes were identified the next step would be to perform long term reliability testing of similar assemblies with similar defects. The goal of the defect analysis would be for the defects to be observed and documented for deterioration of fiber optic performance. Though this report mostly discusses what has been determined as evidence of poor manufacturing processes, it also concludes the majority of the damage could have been avoided with a rigorous process in place.

Kichak, Robert A.↗
NASA NTRSDate not supplied

BioSentinel ISS mission: Analysis of ISS Flight Data and Lessons Learned

As we prepare for a future with a human presence on the Moon, Mars, and beyond, the need for countermeasures to protect astronauts against deep space radiation is ever pressing. However, our understanding of how life operates in the space environment, especially past the protection of the Van Allen radiation belts, is critically limited. BioSentinel, a biological CubeSat, aims to further investigate the effects of deep space ionizing radiation, utilizing the budding yeast Saccharomyces cerevisiae to examine the cell’s DNA damage response. The yeast wild type and a rad51Δ mutant strain defective for DNA damage repair will be monitored via the redox dye alamarBlue and a 3-color LED detection system. Selected as a secondary payload on Artemis I, BioSentinel will be the first deep space biological experiment in a half-century and the first biological CubeSat or free-flyer to ever reach a heliocentric orbit. Notably, BioSentinel is the only biological CubeSat to include an ISS control study in addition to a ground control. Comparisons between the ground, ISS, and free-flyer experiments will allow us to isolate the effects of deep space radiation from those of microgravity. The ISS study also provides a unique platform to conduct important technological and biological testing of BioSentinel’s instrumentation in preparation for the deep space mission. In this work, we use a series of data processing tools and scripts to analyze ISS flight data as well as samples exposed to simulated space radiation at Brookhaven National Laboratory, specifically looking at cell growth, metabolic activity, and duplication rates based on optical absorbance and alamarBlue kinetics. These analyses provide a crucial set of controls and a framework for analyzing and interpreting future data sets from the free-flyer, helping us gain further insight into the health risks astronauts will face when exposed to deep space radiation.

Kylie Lauren Lo-Wen Akiyama↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.↗
NASA NTRS1985

Damage and Repair of Composite Structures

NASA technical memorandum reports on research in damage and repair of composite-material structures of types used in airplane. Research includes: Identifying defect areas, determining whether particular kind of damage weakens structure in manner that degrades performance in intended application, developing repair procedures, and testing to demonstrate given repair procedure enables component to serve during remainder of its design life.

Deaton, J. W.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗