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DOE OSTI2024

Discovery of atomic clock-like spin defects in simple oxides from first principles

Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom — Sb, Bi, or I — occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209 Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Prediction of vacancy defect diffusion paths in high entropy alloys via machine learning on molecular dynamics data

Identifying the diffusion path of point defects is a critical step in understanding their evolution and the mechanisms of related phenomena. Defect diffusion occurs at small length and time scales, with impacts on material properties that may continue to evolve over ns to μs, ms, and the continuum scale (s, min, etc., and cm, m, etc.). The time scale accessible to molecular dynamics (MD) simulations is limited by small step sizes, typically in the fs range. Thus, surrogate models of MD simulations through machine learning (ML)-based algorithms are of great interest, especially for complex systems such as high entropy alloys (HEAs). In this work, dynamics governing vacancy migration in HEA were approximated with graph convolutional network (GCN) models as ansatzes for kinetic Monte Carlo (KMC) rate catalogs. Network design considered that diffusion in crystalline solids generally depends on interactions between defects and their immediate neighbor atoms. Graphs represented the vacancy surroundings, MD-generated trajectories provided training and comparison datasets, and unsupervised GCN models approximated interatomic dynamics governing vacancy migration in HEAs as ansatzes for KMC. A proof-of-concept model trained on MD data for the Fe, Ni, Cr, Co, and Cu HEA environment was used with two different neighbor interactions to assess the feasibility of training a GCN to predict vacancy defect transition rates in the HEA environment. The resulting setup rapidly generated MD-formatted synthetic trajectories based on dynamics learned from the MD training set, with a time acceleration of roughly two orders of magnitude and a similar diffusion coefficient to MD observations. Additionally, Nudged Elastic Band (NEB) calculations were performed on randomly generated FeNiCrCoCu HEA structures to determine vacancy migration barriers across nearest-neighbor sites. Transition probabilities for each jump, categorized by atomic type, were extracted from these calculations. NEB-based and GCN-based approaches led to similar outcomes.

Reimer, C↗

NASA NTRS1977

Field ionization device used for measuring the pulse height defect of He/+/ in silicon

A neutral particle detector using field ionization and liquid-nitrogen-cooled solid state detectors has been developed to investigate the pulse height defect of low energy He(+) ions in silicon. The field ionization tip is fabricated from a short length of tungsten wire; a typical detector is of the surface-barrier Si type with a thin Au window and low capacitance (about 15 pF); the assembly is mounted in a cylindrical vacuum chamber which is pumped to about 10 to the -6th torr. As an example, pulse height distributions for He(+) and H(+) taken at tip bias of 25.7 kV are presented. The detected energy of the H and He ions are studied as a function of the actual energies of accelerated ions, for a detector having a gold front conducting surface layer of 32 micrograms/sq cm.

Curtis, C. C.↗

DOE OSTI2025

2D Vacancy Confinement in Anatase TiO 2 for Enhanced Photocatalytic Activities

Abstract Light‐driven energy conversion devices call for the atomic‐level manipulation of defects associated with electronic states in solids. However, previous approaches to produce oxygen vacancy (V O ) as a source of sub‐bandgap energy levels have hampered the precise control of the distribution and concentration ofV O . Here, a new strategy to spatially confineV O at the homo‐interfaces is demonstrated by exploiting the sequential growth of anatase TiO 2 under dissimilar thermodynamic conditions. Remarkably, metallic behavior with high carrier density and electron mobility is observed after sequential growth of the TiO 2 films under low pressure and temperature (L‐TiO 2 ) on top of high‐quality anatase TiO 2 epitaxial films (H‐TiO 2 ), despite the insulating properties of L‐TiO 2 and H‐TiO 2 single layers. Multiple characterizations elucidate that theV O layer is geometrically confined within 4 unit cells at the interface, along with low‐temperature crystallization of upper L‐TiO 2 films; this 2DV O layer is responsible for the formation of in‐gap states, promoting photocarrier lifetime (≈300%) and light absorption. These results suggest a synthetic strategy to locally confine functional defects and emphasize how sub‐bandgap energy levels in the confined imperfections influence the kinetics of light‐driven catalytic reactions.

Chemistry↗

NASA NTRS2016

Origins of Line Defects in Self-Reacting Friction Stir Welds and Their Impact on Weld Quality

Friction stir welding (FSWing) is a solid state joining technique which reduces the occurrence of typical defects formed in fusion welds, especially of highly alloyed metals. Although the process is robust for aluminum alloys, occasional reductions in the strength of FSWs have been observed. Shortly after the NASA-MSFC implemented a variation of FSW called self-reacting (SR), low strength properties were observed. At that time, this reduction in strength was attributed to a line defect. At that time, the limited data suggested that the line defect was related to the accumulation of native oxides that form on the weld lands and faying surfaces. Through a series of improved cleaning methods, tool redesign, and process parameter modifications, the reduction in the strength of the SR-FSWs was eliminated. As more data has been collected, the occasional reduction in the strength of SR-FSW still occurs. These occasional reductions indicate a need to reexamine the underlying causes. This study builds off a series of self reacting (SR)-FSWs that were made in 3 different thickness panels of AA2219 (0.95, 1.27 and 1.56 cm) at 2 different weld pitches. A bead on plate SR-FSW was also made in the 1.56 cm thick panel to understand the contribution of the former faying surfaces. Copper tracer studies were used to understand the flow lines associated with the weld tool used. The quality of the SR-FSWs was evaluated from tensile testing at room temperature. Reductions in the tensile strength were observed in some weldments, primarily at higher weld pitch or tool rotations. This study explores possible correlations between line defects and the reduction of strength in SR-FSWs. Results from this study will assist in a better understand of the mechanisms responsible for reduced tensile strength and provide methodology for minimizing their occurrence.

Schneider, Judy↗

DOE OSTI2025

Non-Markovian dynamics of a superconducting qubit in a phononic bandgap

Reducing decoherence in quantum computers rapidly decreases the overhead needed to construct a logical qubit from physical qubits. In solid-state systems, a class of defects known as two-level systems is a major source of decoherence. Currently, superconducting qubit experiments reduce dissipation due to the two-level systems by using large device dimensions. However, this approach only provides partial protection and results in a trade-off between qubit size and dissipation. In this work, we instead engineer the interactions between a qubit and the surrounding two-level systems using phononics. We fabricate a superconducting qubit on a phononic-bandgap metamaterial that suppresses phonon emission mediated by the two-level systems. The phonon-engineered bath of two-level systems shows increased lifetime and affects the thermalization dynamics of the qubit. Within the phononic bandgap, we observe the emergence of a non-Markovian qubit behaviour. Further, combined with qubit miniaturization, our approach could substantially extend the qubit relaxation times.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2026

Seamlessly joining length scales: From atomistic thermal graphs to anisotropic continuum conductivity

Thermal transport in complex solids is governed by local structure, defects, and anisotropy, yet most continuum models still rely on oversimplified and homogenized conductivities. Here, we bridge atomistic and continuum descriptions by building finite element (FE) models directly from the site-projected thermal conductivity (SPTC), an atomic-level decomposition of the Green–Kubo thermal conductivity. We introduce a toolkit, the “Simulator Collection for Atomic-to-Continuum Scales (SCACS)”, which uses a graph neural network to predict SPTC on large atomic structures, coarse-grains these fields into anisotropic conductivity tensors, and embeds them into the heat-flow FE equation with a customized, anisotropy-aware adaptive mesh refinement scheme. Applied to silicon nanostructures, the resulting FE models act as representative volume elements, reproduce bulk conductivities, and capture interfacial and defect-driven anisotropy while maintaining thermodynamic consistency. Additionally, SCACS predicts experimental conductance trends and fields. This work demonstrates a general route for transferring atomistic transport information into device-scale thermal simulations with physics-based approximations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Defect-Free Growth of Decagonal Quasicrystals around Obstacles

Quasicrystals are aperiodic solids with exotic physical properties. The mechanisms driving their growth are far from understood, particularly in the presence of rigid obstacles. Here, using in situ synchrotron x-ray tomography and molecular dynamics simulations, we investigate the interaction between decagonal quasicrystals and obstacles (shrinkage pores) during solidification of an Al 79 ⁢Co 6 ⁢Ni 15 alloy. The results reveal defect-free quasicrystal growth around the pores, independent of pore size and geometry. Our findings point to a universal feature of aperiodic solids: their ability to accommodate structural disruptions due to additional (phasonic) degrees of freedom. This Letter opens new possibilities for synthesizing large-scale, single quasicrystals from a liquid metal precursor.

alloys↗

NASA NTRS1981

Turbulent boundary layer over solid and porous surfaces with small roughness

The turbulent boundary layer over a smooth, solid wall is examined along with a sandpaper-roughened, solid wall, and a porous wall. Suitable results are obtained with the smooth, solid wall for the Law of the Wall, the Defect Law, and the axial and turbulence intensities. The logarithmic portion of the Wall Law is shifted in the sandpaper-roughened, solid wall and an increase in the normal turbulence intensity and Reynolds stress is observed. An increase in the local skin friction values and all the turbulence values is found with the porous wall. The influence of a slightly rough, porous wall of sintered metal on the boundary layer is compared with a solid sandpaper-roughened wall in the same nominal K(+) range.

Kong, F. Y.↗

DOE OSTI2026

Imaging of a van der Waals spin-orbit torque system using spin ensembles in hBN

Recently, optically active spin defects embedded in two-dimensional (2D) van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science. Taking advantage of excellent solid-state integrability, this new class of spin defects can be readily arranged in nanoscale proximity to target materials, showing great promise for realizing in-situ quantum sensing of microscopic spin and charge behaviors in vdW heterostructures. Here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching and electric current distributions in an all-vdW spin-orbit torque (SOT) system. By visualizing variations of nanoscale magnetic stray field profile of room-temperature 2D magnet Fe 3 GaTe 2 under different SOT conditions, we show how the magnetic switching evolves from deterministic to stochastic behavior due to the interplay between spin orientations, anisotropy and Joule heating. Micromagnetic simulations rationalize our results well, revealing the role of field-like SOT in inhibiting thermal fluctuation driven stochastic switching and chaotic multi-domain competition. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights into material design, testing, and performance evaluation of next-generation vdW spintronic devices.

Imaging techniques↗

NASA NTRS2005

Skin-Stiffener Debond Prediction Based on Computational Fracture Analysis

Interlaminar fracture mechanics has proven useful for characterizing the onset of delaminations in composites and has been used with limited success primarily to investigate onset in fracture toughness specimens and laboratory size coupon type specimens. Future acceptance of the methodology by industry and certification authorities however, requires the successful demonstration of the methodology on structural level. For this purpose a panel was selected that is reinforced with stringers. Shear loading causes the panel to buckle and the resulting out-of-plane deformations initiate skin/stringer separation at the location of an embedded defect. For finite element analysis, the panel and surrounding load fixture were modeled with shell elements. A small section of the stringer foot and the panel in the vicinity of the embedded defect were modeled with a local 3D solid model. Across the width of the stringer foot the mixed-mode strain energy release rates were calculated using the virtual crack closure technique. A failure index was calculated by correlating the results with the mixed-mode failure criterion of the graphite/epoxy material. For small applied loads the failure index is well below one across the entire width. With increasing load the failure index approaches one first near the edge of the stringer foot from which delamination is expected to grow. With increasing delamination lengths the buckling pattern of the panel changes and the failure index increases which suggests that rapid delamination growth from the initial defect is to be expected.

Krueger, Ronald↗

DOE OSTI2024

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

Melchioni, Nicola↗

NASA NTRS2006

Analysis of Composite Panel-Stiffener Debonding Using a Shell/3D Modeling Technique

Krueger, Ronald↗

DOE OSTI2025

Pseudo-equilibrium theory for extrinsic doping control of the topological semimetal Cd 3 As 2

The standard approach for predicting defect equilibria from first principles assumes that the solid-state system is initially in a thermodynamic equilibrium with the external atomic reservoirs. This “growth step” is then often followed by a temperature quench in a “pseudo-equilibrium” in which some or all defect concentrations are frozen in until only the Fermi level E F remains to be equilibrated. However, this protocol does not account for the possibility of site exchanges which can create important defect redistributions as long as short-range defect migration is kinetically permissible. To model this redistribution, we developed an approach to solve for the non-equilibrium chemical potentials as a function of temperature while maintaining the overall defect stoichiometry. We then apply this approach to the Dirac semimetal Cd 3 As 2 to model extrinsic doping with group 1/11 and 14 elements. Undoped Cd 3 As 2 exhibits an undesirable mismatch between E F and the Dirac point. This unintentional electron doping originates from intrinsic defects and is difficult to overcome through adjustment of synthesis conditions alone. Employing our pseudo-equilibrium modeling, we identify extrinsic doping strategies for realizing doping-balanced Cd 3 As 2 at the relatively low temperatures accessible in thin-film growth of this material.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Facile Synthesis of Oxyhydrides by Reaction with NaBH 4 in an Open System

Oxyhydrides are an intriguing class of materials in which there is partial replacement of the oxide ion with hydride ions and oxygen vacancies. Conventional synthesis relies on vacuum sealed ampules, using long reaction times at high temperatures, limiting accessibility. Here, we demonstrate a rapid, ambient-pressure route to oxyhydride formation using NaBH 4 under flowing argon in just 1 h. This approach significantly lowers experimental barriers, enabling broader exploration of these materials. The maximum hydride incorporation, obtained using a reaction temperature of 400 °C, is given by the formula SrTiO 2.945 H 0.049 , where the hydride, oxygen vacancy, and unpaired electron concentrations are determined through thermogravimetric analysis, quantitative solid-state nuclear magnetic resonance (NMR) spectroscopy, and electron paramagnetic resonance (EPR) spectroscopy. Density functional theory simulations of the 1 H NMR shifts for candidate point defects support the assignment of the observed hydride peak, validating the efficacy of the synthetic approach. A combination of in situ and ex situ studies of the reaction pathway reveal that hydride incorporation into the perovskite occurs via direct solid-solid reaction, with higher reaction temperatures favoring NaBH 4 decomposition and H 2 (g) release over oxyhydride formation. The electronic defect structure established from the EPR and NMR studies indicate that, at ambient temperature, anion vacant sites are occupied by single electrons, whereas hydride sites do not trap electrons. As a result, this work establishes a scalable synthesis strategy and provides a computational-experimental framework for understanding defect chemistry in oxyhydrides, opening pathways for their integration into energy and electronic applications.

Anions↗

DOE OSTI2025

Defect Thermodynamics and Transport Properties of Proton Conducting Perovskite Electrode and Electrolyte Materials Evaluated Based on Density Functional Theory Modeling

Both electron-rich and electron-poor perovskite oxides have been used in solid oxide cell applications as electrode and electrolyte materials. The rich oxygen defect chemistry and its coupling to temperature, hydrogen-steam or oxygen-steam gas pressure, or to the applied potentials creates enormous complexities for modeling performance and degradation of the materials. Herein, density functional theory-based thermodynamic modeling was carried out to describe the defect chemistry and transport properties of the proton-conducting electrolyte BaZr1-xYxO3-δ (x≤0.1) and of the triple-conducting perovskite (La,Ba)(Fe,M)O3-δ (M=Y and Zr). The defect thermodynamics of intrinsic point defects and the hydrogen-related defect reactions were solved in integrated defect models and further used to predict the Brouwer diagram and the transport properties of the functional perovskites. For the electron-poor electrolytes BaZr0.9Y0.1O3-δ, the developed model has been used to describe the experimental transport properties in the SOC operating conditions. Specifically, the roles played by the acceptor-bound holes and the intrinsic and hydrogen point defects upon the conductivities of holes, protons, and oxygen vacancies under the hydrogen-rich and oxygen-rich conditions at various humidity levels were demonstrated. A defect modeling tool was also developed for the triple-conducting perovskite (La,Ba)(Fe,M)O3-δ (M=Y and Zr) to examine magnetic effects and hydride defects in defect equilibria.

defect thermodynamics↗

DOE OSTI2026

Finding the perfect imperfection: Accelerated, computationally driven discovery and design of quantum defects

Optically addressable spin defects have emerged as the leading platforms for quantum sensing and communication in solid-state systems. While traditional efforts have concentrated on a focused set of well-studied defects, recent advances in high-throughput computational methods have shown promise for large-scale exploration of defects across diverse semiconductor hosts. By cataloging key properties of quantum defects in computational databases, high-throughput screening techniques can systematically suggest and design novel candidates. In this article, we highlight recent advances in data-driven quantum defect design aimed at addressing critical materials science challenges such as host materials selection, defect stability, and desirable electronic and optical properties. Here, we emphasize the importance of electronic-structure-guided searches across various materials and illustrate how high-throughput computations contribute to our understanding of design principles for quantum defects. Additionally, we outline ongoing challenges and emerging opportunities in this rapidly developing field.

Xiong, Yihuang [Dartmouth College, Hanover, NH (Un↗

NASA NTRS2005

Nondestructive Visualization of Defects and Crack Propagation of Shuttle-Foam

Shuttle insulating foam is a low-density closed-cell solid-gas composite. A chief barrier to understanding foam loss has been extreme difficulties in nondestructively visualizing defects of the foam that is almost transparent to x-rays. Here we show that defects, crack propagation, and cell structure can be clearly and nondestructively observed by turning the density inhomogeneity across foam structures into a source for phase contrast imaging. This provides a new powerful way to help understand foam loss.

Hu, Zheng-Wei↗