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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Functional materials and devices by self-assembly

The field of self-assembly has moved far beyond early work, where the focus was primarily the resultant beautiful two- and three-dimensional structures, to a focus on forming materials and devices with important properties either otherwise not available, or only available at great cost. Over the last few years, materials with unprecedented electronic, photonic, energy-storage, and chemical separation functionalities were created with self-assembly, while at the same time, the ability to form even more complex structures in two and three dimensions has only continued to advance. Self-assembly crosscuts all areas of materials. Functional structures have now been realized in polymer, ceramic, metallic, and semiconducting systems, as well as composites containing multiple classes of materials. Finally, as the field of self-assembly continues to advance, the number of highly functional systems will only continue to grow and make increasingly greater impacts in both the consumer and industrial space.

Materials for Devices↗
DOE OSTI2019

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗
DOE OSTI2022

Toward Hot Carrier Extraction in Intervalley Photovoltaic Devices

InGaAs heterostructures have demonstrated the means to maintain hot carrier behavior under practical operating conditions via valley photovoltaics. However, enhancing the extraction to create a fully operational hot carrier solar cell requires an enhanced understanding of the barriers inside such devices. A set of four InGaAs heterostructures altering the n + top layer of the structure has been produced to enable comparative analysis of the current density-voltage characterization and the relationship to the band and valley alignments.

14 SOLAR ENERGY↗
DOE OSTI2021

Toward exascale whole-device modeling of fusion devices: Porting the GENE gyrokinetic microturbulence code to GPU

GENE solves the five-dimensional gyrokinetic equations to simulate the development and evolution of plasma microturbulence in magnetic fusion devices. The plasma model used is close to first principles and computationally very expensive to solve in the relevant physical regimes. In order to use the emerging computational capabilities to gain new physics insights, several new numerical and computational developments are required. Here, we focus on the fact that it is crucial to efficiently utilize GPUs (graphics processing units) that provide the vast majority of the computational power on such systems. In this paper, we describe the various porting approaches considered and given the constraints of the GENE code and its development model, justify the decisions made, and describe the path taken in porting GENE to GPUs. We introduce a novel library called gtensor that was developed along the way to support the process. Performance results are presented for the ported code, which in a single node of the Summit supercomputer achieves a speed-up of almost 15× compared to running on central processing unit (CPU) only. Typical GPU kernels are memory-bound, achieving about 90% of peak. Our analysis shows that there is still room for improvement if we can refactor/fuse kernels to achieve higher arithmetic intensity. We also performed a weak parallel scalability study, which shows that the code runs well on a massively parallel system, but communication costs start becoming a significant bottleneck.

Germaschewski, K. (ORCID:0000000284956354)↗
DOE OSTI2023

QASMTrans: A QASM Quantum Transpiler Framework for NISQ Devices

In quantum computing, transpilation plays a crucial role in converting high-level, machine-independent quantum circuits into circuits specially for a quantum device, considering factors such as basis gate set, topology, error profile, etc. Yet, the efficiency of transpilation remains a significant bottleneck, particularly when dealing with very large QASM level input files. In this paper, we present QASMTrans, a C++ based high-performance quantum transpiler framework that can demonstrate on average 50-100× speedups compared to the internal transpiler of Qiskit. Particularly, for large dense circuits such as ’uccsd n24’ and ’qft n320’ incorporating millions of gates, QASMTrans can successfully transpile in 69s and 31s, respectively, while Qiskit failed to finish in one hour. Using QASMTrans as the baseline, it becomes more feasible to explore much larger design space and impose more comprehensive compiler optimizations.

Hua, Fei↗
DOE OSTI2021

Collaboration on SBIR/TTO Phase II Project for Optical QC Device and Collaboration on SBIR/TTO Phase II-b Project for Advanced Quality Inspection Device Development: Cooperative Research and Development CRADA Number CRD-16-00652 (Final Report)

The overall goal of this program is to develop and commercialize a turnkey quality control solution for the entire PEM fuel cell manufacturing process including membrane, gas diffusion layers, catalyst, and assembled systems. This quality control solution is unique to each customer’s specific needs but includes a suite of in-line quality control systems for roll-to-roll manufacturing that can target thin, transparent membrane as well as opaque membrane, catalyst, and GDLs. The Phase II developed the CPNUVV system for thin, transparent membrane that operates using polarized filters to enhance defect resolution and determine thickness. However, PEM material manufacturers want a complete, turnkey solution for all components of the PEM fuel cell. In the Phase IIB, Mainstream will partner with NREL, and transition reflectance technology NREL developed (US Patent 9,234,843) to operate in real-time on a web-line to develop a total solution to PEM quality control. The device will identify and mark defects as well as monitor materials thickness in real-time to improve line efficiency and to reduce waste. The research performed at NREL under this CRADA increases the basis of knowledge about optical inspection methods, how they perform with regards to fuel cell component materials, and how they can be implemented in in-line, real-time configurations to provide quality inspection for roll-to-roll (R2R) manufacturing. Methods explored were found to be sensitive to catalyst loading in electrodes on both membrane and gas diffusion media substrates and to membrane thickness, across a broad range of thickness. The latter capability is novel and now patented and provides a previously unstudied and undemonstrated capability for R2R manufacturing of membranes.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1982

Study of laser heated propulsion devices. Part 1: Evaluation of laser devices, fuels and energy coupling mechanisms

Closed cycle, CW waveform and short wavelength laser devices are desirable characteristics for laser propulsion. The choice of specific wavelengths for hydrogen fuel affects the operational conditions under which a laser supported absorption (LSA) wave is initiated and maintained. The mechanisms of initiating and maintaining LSA waves depend on the wavelength of the laser. Consequently, the shape and size of the hot core plasma is also dependent on wavelength and pressure. Detailed modeling of these mechanisms must be performed before their actual significance can be ascertained. Inverse bremsstrahlung absorption mechanism is the dominant mechanism for coupling energy into the plasma, but other mechanisms which are wavelength dependent can dictate the LSA wave plasma initiation and maintenance conditions. Multiphoton mechanisms become important at visible or shorter wavelengths. These are important mechanisms in creating the initial H2 gas breakdown and supplying the precursor electrons required to sustain the plasma.

Hofer, O. C.↗
DOE OSTI2018

Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices

A polymer-hybrid electro-optic device is fabricated by providing a semiconductor substrate, depositing a metal electrode layer on the semiconductor substrate, depositing a dielectric barrier core layer within a gap of the metal electrode layer, patterning a polymer layer to cover the dielectric barrier core layer and partially covering the metal electrode layer, infiltrating the polymer layer with an inorganic component to form a hybrid oxide-polymer layer, and removing excess inorganic component from the semiconductor substrate and metal electrode layer.

Ocola, Leonidas E.↗
DOE OSTI2020

Semiconductor power device including wire or ribbon bonds over device active region

A semiconductor power device including a base plate; an input lead; an output lead; a field effect transistor (FET) power die disposed over the base plate, wherein the FET power die includes a set of source fingers, a set of drain fingers, and a set of gate fingers disposed directly over an active region, wherein the gate fingers are configured to receive an input signal from the input lead, and wherein the FET power die is configured to process the input signal to generate an output signal at the drain fingers for routing to the output lead; and electrical conductors (wirebonds or ribbons) bonded to the source and/or drain directly over the active region of the FET power die. The electrical conductors produce additional thermal paths between the active region and the base plate for thermal management of the FET power die.

42 ENGINEERING↗
DOE OSTI2019

Phenanthro[9,10- d ]triazole and imidazole derivatives: high triplet energy host materials for blue phosphorescent organic light emitting devices

A class of wide bandgap host materials is introduced as an alternative to carbazole-based hosts to enhance the efficiency and transport properties of organic light emitting diodes (OLEDs). We have synthesized and investigate the photophysical and electrochemical properties of a series of phenanthrene derivatives incorporating fused triazole or imidazole rings. Here, the resulting phenanthro[9,10-d]triazoles and phenanthro[9,10-d]imidazoles are suitable host materials for blue phosphors due to their high triplet energies and conductivities. Incorporation of bulky substituent groups leads to retention of the high triplet energies in the solid state. The most promising materials are incorporated in blue phosphorescent OLEDs that achieve external quantum efficiencies >20%.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗