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Numerical Model of IProTech PIP WEC Device
iProTech PIP wave energy converter (WEC) is a slack moored, single hull device with no moving parts in the water, joints or bearings. This submission includes data of the simulation, reports, and code for the iProTech PIP (WEC) project. The organization of the data included in the provided archive is detailed below and in the data description of the archive. The data teamer-iprotech-nrel folder includes and explains matlab and python code developed to hydrodynamically model the PIP WEC device in WEC-Sim. The subfolders cover the following steps: 1) report: explanatory information on device geometry 2) pip_mesher: python code to generate mesh panels from device profile data 3) wec-sim_models: matlab code to run WEC-Sim The data uploaded is a snapshot as of 11/02/2121 of code residing in a Github repository administered by David Ogden of NREL.
A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current
We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.
Probability Density Function for the spatial and intensity distribution of neutron-induced defects in Silicon
The ability to model semiconductor device degradation under neutron irradiation depends upon having a robust modeling capability for the neutron-induced collision cascades as well as a means to analytically fit the resulting probability distributions of defect production and ionizing energy deposition for purposes of extrapolation to low-probability, high-consequence scenarios. In this paper, the widely-utilized binary collision approximation codes MARLOWE and SRIM are deployed in conjunction with a critical examination of their parameterizations as benchmarked against higher-fidelity molecular dynamics simulations. A simple 3-parameter form described by the Generalized Logistic Distribution is shown to be a good fit to Frenkel pair and ionization intensity distributions in bulk silicon. The BCA codes are then applied to simulate cascades in 5 nm layers of a representative gate-all-around nanosheet transistor, where joint probability distributions of threshold levels of damage to multiple layers are evaluated.
Multi-machine validation of plasma initiation modelling and prospects for future devices: Predicting plasma initiation using only hardware design and control room input data
This paper reports on the generic prediction capability of full electromagnetic plasma initiation modelling with DYON, which was carried out for the first time in fusion research by the joint modelling of the International Tokamak Physics Activity—Integrating Operation Scenario group. The following devices were included in the experiment database: VEST (spherical torus, copper coils, Stainless steel wall, R/a = 0.3 m/0.2 m, V v = 3.7 m 3 ), MAST-U (spherical torus, copper coils, C wall, R/a = 0.7 m/0.5 m, V v = 55 m 3 ), EAST (conventional tokamak, superconducting coils, metallic wall, R/a = 1.85 m/0.5 m, V v = 38 m 3 ), DIII-D (conventional tokamak, copper coils, C wall, R/a = 1.67 m/0.65 m, V v = 35 m 3 ), and KSTAR (conventional tokamak, superconducting coils, C wall, R/a = 1.8 m/0.5 m, V v = 55 m 3 ). Despite the different hardware features of the devices, the required operating spaces of the loop voltage induction and prefill gas pressure for inductive plasma initiation in each device were successfully reproduced by the predictive simulations with DYON using only the individual hardware design and the control room input data for each discharge. This successful validation across multiple machines demonstrates that the full electromagnetic DYON modelling can capture the essential physics of inductive plasma initiation. The simulation settings commonly employed for all modelling and the modifications necessary to account for the discrepancies between individual devices are reported. Predictions for ITER based on the multi-machine validation indicate that a wide range of prefill gas pressures exists for the Townsend breakdown and the plasma burn-through (0.01–1.5 mPa).
Verification of a Fluid-Based Plasma-Edge Model Within the Multiphysics Object-Oriented Simulation Environment (MOOSE) Framework
As the goal of achieving fusion power on the grid comes closer to fruition, fully coupled multiphysics models of fusion devices will be crucial. These models must incorporate the interconnected phenomena of these devices, including plasma physics, neutronics, first wall interactions, and tritium transport. Currently, there are two main approaches to developing these platforms: (1) loosely coupled, where one couples existing codes and solvers together through input and output parameters and data, and (2) tightly coupled, where one develops the necessary models within a singular, integrated framework. This work focuses on the latter approach for magnetically confined fusion devices by developing a fluid-based plasma-edge model within the Multiphysics Object Oriented Simulation Environment (MOOSE) Framework. This effort is coordinated with other efforts to develop, test, demonstrate, and deploy fusion relevant multiphysics capabilities including electromagnetics, particle-in-cell plasma, tritium transport, and fusion blanket design. This new model is an expansion of the MOOSE-based plasma application, Zapdos, which was originally formulated to model low-temperature, non-magnetized plasma processes. Verification studies have been conducted using newly developed magnetic plasma capabilities. These involved convergence analyses utilizing the method of manufactured solutions to verify new operators and case studies. A modular approach was taken here to demonstrate increasingly complicated simulation scenarios, which included a singular fluid with uniform magnetic field case, a singular fluid with spatially varying magnetic field case, and a coupled multifluid case.
Particle-based modelling of axisymmetric tandem mirror devices
In this work, we describe the use of a 1D-2V quasi-neutral hybrid electrostatic PIC with Monte-Carlo Coulomb collisions and non-uniform magnetic field to model the parallel transport and confinement in an axisymmetric tandem mirror device. End-plugs, based on simple-mirrors, are positioned at each end of the device and fueled with neutral beams (25 and 100 keV) to produce a sloshing ion population and increase the density of the end-plugs relative to the central cell. Results show the formation of a potential difference barrier between the central cell and the end-plugs. This potential confines a large fraction of the low energy thermal ions in the central cell which would otherwise be lost in a simple mirror, demonstrating the advantage of the beam-driven tandem mirror configuration relative to simple mirrors. In addition, we explore the effect of end-plug electron temperature on the confinement time of the device and compare it with theoretical estimates. Finally, we discuss the limitations of the code in its present form and describe the next logical steps to improve its predictive capability such as a fully nonlinear Fokker–Planck collision operator, multiply nested flux surface solutions and modeling the exhaust region up to the wall.
Free-Surface Liquid Lithium Flow Modeling and Stability Analysis for Fusion Applications
Liquid metal plasma facing components are considered an attractive design choice for fusion devices including pilot plants. Virtual prototyping of such devices includes modeling of free-surface flow of the electrically conductive liquid, which requires computational fluid dynamics (CFD) and magnetohydrodynamics (MHD) simulations. Numerical tools capable of simulating flows and heat transfer in the free-surface MHD flow were developed at PPPL based on the customized ANSYS CFX. Here, MHD is introduced using a magnetic vector potential approach. Free-surface flow capabilities are available in the code and were tested. Special stabilization procedures were derived and applied to improve convergence of the momentum equations with the source terms due to the Lorentz force and surface tension. Important characteristics of the fusion-relevant liquid metal flow is free surface smoothness and stability. Heat flux from the plasma impacts the liquid surface at a very acute angle, so any change of the free surface from axisymmetry can dramatically increase the local heat flux density and thus create excessive evaporation of liquid lithium into the plasma, which is detrimental to operations. Stability analysis of the liquid metal film flow was performed to determine applicable flow regimes. Thin film flow along horizontal wall is considered. Effects of gravity, magnetic field, and surface tension are included in the analysis.
Defect Kinetics and Control for Module Reliability
Potential induced degradation is currently one of the most important module degradation mechanisms. It has been suggested that stacking faults decorated with sodium from the module glass are responsible for this effect and authors have also shown the reversibility of this effect upon reverse biasing of the module. The importance of sodium in the failure mechanism is clear, however, little is known regarding the factors that control its diffusion into the wafer, making it nearly impossible to predict the performance of a given module and engineer it to be better. Sodium migration from module glass into silicon cells and the resulting module degradation is a clear example of how defect kinetics can determine overall module performance and long-term reliability. To the detriment of the industry and its bankability, no quantitative models yet exist to predict defect-assisted module degradation, limiting the progress in improving reliability. In particular, the understanding of defect behavior under high electric fields, under stresses imparted by encapsulation or temperature, and under real operating conditions over long periods of time is a crucial gap in the current state-of-the-art. In this work we developed a Defect-Device-Degradation model to predict defect behavior and its impact on device performance over the module operational lifetime using experimentally-determined defect parameterizations. The validated model will provide a platform for manufacturing process optimization across input materials and architectures to avoid deleterious defects upstream and enable enhanced module robustness.
Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element
A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.
Modeling Carbon-Based Nanomaterials (CNMs) and Derived Composites and Devices
A review of different modeling techniques, specifically in the framework of carbon-based nanomaterials (CNMs, including nanoparticles such as graphene and carbon nanotubes—CNTs) and the composites and devices that can be derived from them, is presented. The article emphasizes that the overall performance of these materials depends on mechanisms that operate across different time and spatial scales, requiring tailored approaches based on the material type, size, internal structure/configuration, and the specific properties of interest. Far from attempting to cover the entire spectrum of models, this review examines a wide range of analysis and simulation techniques, highlighting their potential use, some of their weaknesses and strengths, and presenting the latest developments and some application examples. In this way, it is shown how modeling can provide key information for tailoring or designing new materials for specific components or systems or to obtain certain functionalities. At the same time, it is revealed to be an area constantly undergoing development and improvement, as evidenced by the progress made by various of these techniques and the new modeling approaches that have emerged in recent years.
Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability
This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.
Super‐Droplet Method to Simulate Lagrangian Microphysics of Nuclear Fallout in a Homogeneous Cloud
Abstract Nuclear detonations produce hazardous local and global particles or fallout. Predicting fallout size, chemical components, and location is necessary to inform officials and determine immediate guidance for the public. However, existing nuclear detonation fallout models prescribe the particle size distributions based on limited observations. In this work, we apply the super‐droplet method, which is a numerical modeling technique developed for cloud microphysics, to simulate size distributions of particles in a mushroom cloud formed post‐detonation of a nuclear device. We model fallout formation and evolution with homogeneous nucleation and condensation of a single species and a Monte Carlo coagulation algorithm. We verify the numerical methods representing coagulation and condensation processes against analytical test problems. Additionally, we explore several scenarios for the integral system mass and yield in equivalent kilotons (kt) of TNT (trinitrotoluene). The fallout size distribution median diameter d pg follows a scaling law based on the integral system mass m v 0 kg and yield Y kt: nm. We test the effect of cloud turbulence, enhanced nucleation and growth, and vapor volatility with a sensitivity study. The range in median diameter predictions for simulations of historical tests performed over the Pacific encompass the measurements of particles sampled from the cloud caps. Predicted median particle size ranges up to 217, 123, 86, and 35 nm for historical tests with yields of 0.2, 0.7, 2, and 10 Mt, respectively. This work can be expanded in many different directions to build a more predictive model for fallout formation.
ParaStell: parametric modeling and neutronics support for stellarator fusion power plants
The three-dimensional variation inherent to stellarator geometries and fusion sources motivates three-dimensional modeling to obtain accurate results from computational modeling in support of design and analysis of first wall, blanket, and shield (FWBS) systems. Manually constructing stellarator fusion power plant geometries in computer-aided design (CAD) and defining the corresponding fusion source can be cumbersome and challenging. The open-source parametric modeling toolset ParaStell has been developed to automate construction of such geometries in low-fidelity. Low-fidelity modeling is useful during the conceptual phase of engineering design as a means of rapidly exploring the design space of a given device. The modeling capability of ParaStell includes in-vessel components and magnets, for any given stellarator configuration, using a parametric definition and plasma equilibrium data. Furthermore, the toolset automates the generation of detailed, tetrahedral neutron source definitions and DAGMC geometries for use in neutronics modeling. ParaStell assists rapid design iteration, parametric study, and design optimization of stellarator fusion cores. As a demonstration of the design iteration capability, the effect of the three-dimensional parameter space on tritium breeding and magnet shielding is investigated, using the WISTELL-D configuration as a design basis. Blanket and shield thicknesses are varied in three dimensions, using the space available between the plasma edge and magnet coils as a constraint. The corresponding effects on tritium breeding ratio and magnet heating are tallied using the open-source Monte Carlo particle transport code OpenMC. The inclusion of additional and higher-fidelity modeling capabilities is planned for ParaStell’s future, as well as its implementation in machine-driven optimization.
Simulating Quantum Systems with NWQ-Sim on HPC
NWQ-Sim is a cutting-edge quantum system simulation environment designed to run on classical multi-node, multi-CPU/GPU heterogeneous HPC systems. In this work, we provide a brief overview of NWQ-Sim and its implementation in simulating quantum circuit applications, such as the transverse field Ising model. We also demonstrate how NWQ-Sim can be used to examine the effects of errors that occur on real quantum devices, using a combined device noise model. Moreover, NWQ-Sim is particularly well-suited for implementing variational quantum algorithms where circuits are dynamically generated. Therefore, we also illustrate this with the variational quantum eigensolver (VQE) for the Ising model. In both cases, NWQ-Sim's performance is comparable to or better than alternative simulators. We conclude that NWQ-Sim is a useful and flexible tool for simulating quantum circuits and algorithms, with performance advantages and noise-aware simulation capabilities.
High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory
Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2- x systems such as HfO 2- x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.
Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells
Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge-carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter-absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption or luminescence and charge-carrier generation or recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge-carrier models to predict device performance. To examine this assumption, we develop a fully coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results with past methods that do not consider cross-influences between charge and radiation transport, we find that a fully coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. As these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.
GASNet-EX Memory Kinds: Support for Device Memory in PGAS Programming Models
There is an emerging need for adaptive, lightweight communication in irregular HPC applications at exascale, where GPU accelerators provide the majority of available compute cycles. To address this need, Lawrence Berkeley National Lab is developing a programming system to support distributed-memory HPC application development using the Partitioned Global Address Space (PGAS) model. This work includes two major components: UPC++ and GASNet-EX. UPC++ is a C++ template library providing Remote Memory Access (RMA) and Remote Procedure Call (RPC) communication interfaces. GASNet-EX is a portable, high-performance communication middleware library, used by the implementations of UPC++ and many other PGAS programming models. We describe recent advances in GASNet-EX to efficiently implement zero-copy Remote Memory Access (RMA) communication to and from memory on accelerator devices such as GPUs. We demonstrate performance improvements via benchmark results from UPC++ (on Summit) and the Legion programming system (on DGX-1), both using GASNet-EX for communication.