Search NASA⌕ Search

SEARCH · Search NASA

Results for “dielectric layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Radiation from a parallel-plate waveguide into a dielectric or plasma layer.

An analytical solution for radiation from a truncated parallel-plate waveguide into a dielectric or plasma slab is obtained by solving the Hilbert problem associated with a certain singular integral equation. The technique has the advantage that the edge condition is easily shown to be satisfied, and numerical results can be obtained with excellent accuracy. Numerical results are presented for a variety of dielectric and plasma slabs, parallel-plate separations, and aperture-to-slab distances.

Kostelnicek, R. J.↗
NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗
NASA NTRS1977

Ferroelectric liquid crystal display

A ferroelectric liquid crystal display device employs capacitance spoiling layers to minimize unneeded capacitances created by crossovers of X and Y address lines and to accurately define desired capacitances. The spoiler layers comprise low dielectric constant layers which space electrodes from the ferroelectric at crossover points where capacitance is not needed for device operation.

York, Paul K.↗
NASA NTRS1995

Multilayer Thin-Film Microcapacitors

Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.

Thakoor, Sarita↗
NASA NTRS1975

A new real-time non-coherent to coherent light image converter - The hybrid field effect liquid crystal light valve

A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.

Grinberg, J.↗
NASA NTRS1977

Reflective liquid crystal light valve with hybrid field effect mode

There is disclosed a high performance reflective mode liquid crystal light valve suitable for general image processing and projection and particularly suited for application to real-time coherent optical data processing. A preferred example of the device uses a CdS photoconductor, a CdTe light absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The non-coherent light image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the AC voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state (voltage off the liquid crystal) and the optical birefringence effect to create the bright on-state. The liquid crystal thus modulates the polarization of the coherent read-out or projection light responsively to the non-coherent image. An analyzer is used to create an intensity modulated output beam.

Boswell, Donald D.↗
NASA NTRS2011

Internal Electrostatic Discharge Monitor - IESDM

A document discusses an innovation designed to effectively monitor dielectric charging in spacecraft components to measure the potential for discharge in order to prevent damage from internal electrostatic discharge (IESD). High-energy electrons penetrate the structural materials and shielding of a spacecraft and then stop inside dielectrics and keep accumulating. Those deposited charges generate an electric field. If the electric field becomes higher than the breakdown threshold (approx. =2 x 10(exp 5) V/cm), discharge occurs. This monitor measures potentials as a function of dielectric depth. Differentiation of potential with respect to the depth yields electric field. Direct measurement of the depth profile of the potential in a dielectric makes real-time electronic field evaluation possible without simulations. The IESDM has been designed to emulate a multi-layer circuit board, to insert very thin metallic layers between the dielectric layers. The conductors serve as diagnostic monitoring locations to measure the deposited electron-charge and the charge dynamics. Measurement of the time-dependent potential of the metal layers provides information on the amount of charge deposited in the dielectrics and the movement of that charge with time (dynamics).

Kim, Wousik↗
NASA NTRS1988

The microwave spectrum of asteroid Ceres

This paper presents new measurements of the microwave flux of Ceres obtained at wavelengths between 3.3 mm and 20 cm using the 12 m Kitt Peak antenna and the Very Large Array. These new measurements are combined with previous measurements to confirm a substantial decrease in flux density at centimeter wavelengths compared to millimeter wavelength. Using a statistical technique adapted from terrestrial microwave remote sensing, this spectrum has been compared with that of various candidate materials and models for the subsurface structure of Ceres. It is concluded that Ceres is largely covered with a 3-cm-thick layer whose dielectric properties resemble dry terrestrial clay. This layer may have formed by micrometeorite impact on hydrothermally altered basic or ultrabasic rock or on carbonaceous chondrite material.

Webster, W. J., Jr.↗
NASA NTRS2001

ISS And Space Environment Interactions Without Operating Plasma Contactor

The International Space Station (ISS) will be the largest, highest power spacecraft placed in orbit. Because of this the design of the electrical power system diverged markedly from previous systems. The solar arrays will operate at 160 V and the power distribution voltage will be 120 V. The structure is grounded to the negative side of the solar arrays so under the right circumstances it is possible to drive the ISS potential very negative. A plasma contactor has been added to the ISS to provide control of the ISS structure potential relative to the ambient plasma. The ISS requirement is that the ISS structure not be greater than 40 V positive or negative of local plasma. What are the ramifications of operating large structures with such high voltage power systems? The application of a plasma contactor on ISS controls the potential between the structure and the local plasma, preventing degrading effects. It is conceivable that there can be situations where the plasma contactor might be non-functional. This might be due to lack of power, the need to turn it off during some of the build-up sequences, the loss of functionality for both plasma contactors before a replacement can be installed, similar circumstances. A study was undertaken to understand how important it is to have the contactor functioning and how long it might be off before unacceptable degradation to ISS could occur. The details of interaction effects on spacecraft have not been addressed until driven by design. This was true for ISS. If the structure is allowed to float highly negative impinging ions can sputter exposed conductors which can degrade the primary surface and also generate contamination due to the sputtered material. Arcing has been known to occur on solar arrays that float negative of the ambient plasma. This can also generate electromagnetic interference and voltage transients. Much of the ISS structure and pressure module surfaces exposed to space is anodized aluminum. The anodization thickness is very thin to provide the required solar absorptance and emittance. For conditions where ISS structure can charge negative a large percentage of the array voltage, the dielectric strength of this layer is low, and dielectric breakdown (arcing) can occur. The energy stored capacitively in the structure can be delivered to the arc. The mechanisms by which this energy is delivered and how much of the energy is available hasn't been fully quantified. Questions have been raised regarding the possibility of whether a sustained arc might result due to current collected by the solar arrays from local plasma. It was postulated that even if dielectric breakdown didn't occur, impacts due to micrometeoroids and space debris could penetrate thin layers of dielectric on ISS and initiate an arc due to the coupling provided by the dense local plasma produced by the impact. This was proven in experiments conducted jointly by MSFC and Auburn University. A target chamber with a simulated ionospheric plasma and a biased, anodized aluminum plate and a 1-microfarad capacitor was used. The plate was then impacted by 75-micron particles accelerated to orbital velocity. Arc discharges were sustained for higher voltages but a threshold appears below which no discharge was initiated. Most items without an exposed power system will float electrically near the local plasma potential. This is true of the Space Shuttle, an Astronaut on EVA, and similar items. The structure of ISS might be at a large negative voltage. Therefore, capacitively stored energy can be transferred during docking, installing external boxes and equipment and Astronaut contact with ISS structure. The circumstances of when this can happen and the resulting effects are evaluated in this study. Also, a crewmember on EVA might be in the vicinity of an arc. All safety aspects of such an encounter including charging, molten particles from the arc site and EMI have been evaluated. This paper will report on the total results of this study focussed on the 4A configuration, scheduled to be complete in November, 2000. Interactions such as arcing, debris induced arcs, sustained arcs, sputtering, contamination from sputtering and arcing, docking interactions and Astronaut safety issues will all be addressed.

Carruth, M. R., Jr.↗
NASA NTRS2019

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

While NASA Glenn Research Center's "Generation 10" 4H-SiC Junction Field Effect Transistor (JFET) integrated circuits (ICs) have uniquely demonstrated 500 °C electrical operation for durations of over a year, this experimental work has also revealed that physical cracking of chip dielectric passivation layers ultimately limits extreme-environment operating lifetime [1-3]. The prevention of such dielectric passivation cracks should therefore improve IC high temperature durability and yield, leading to more beneficial technology adoption into aerospace, automotive, and energy systems. This report describes Generation 10.2, 11.1, and 11.2 die tested under unbiased and unpackaged accelerated age testing at 500 °C, 600 °C, 720 °C, and 800 °C in air-atmosphere ovens for 100- and 200-hour duration. Additional samples were separately subjected to 10 thermal cycles between the same high temperatures (with 10-hour high-temperature soak each cycle) and 50 °C. It is shown that having two stoichiometric Si3N4 layers in the interconnect dielectric stack substantially decreases the amount of dielectric cracking observed following these oven tests.

Spry, D. J.↗
NASA NTRS2019

Low-Loss Microstrip Transmission Line Fabricated with Improved Liftoff Process

The µ-Spec integrated spectrometer operating at ~500 GHz, employs thin film superconducting Nb microstrip transmission lines deposited directly on a thin (450 nm) single-crystal silicon dielectric. This single-crystal silicon layer is chosen as the dielectric layer due to its low intrinsic loss, with the goal of achieving both high- efficiency and precise phase control in a compact spectrometer architecture. To avoid roughening or etching through the thin single-crystal silicon dielectric a liftoff technique was developed for patterning these microstrip transmission lines and ground plane structures. This two- layer liftoff process was designed for use with sputter deposition and resulted in a US patent. Although this original technique provided precise control of linewidth, results of initial prototype spectrometer devices and separate diagnostic co-planer waveguide resonator devices showed that unexpected loss was being introduced due to the lift-off process. This extra loss was believed to be due to the “tails” (thin tapered regions) at the edge of the metal traces resulting from the sputtering process, as well as an amorphous oxide layer at the Nb-Si interface. We have since demonstrated an improved lift-off technique, which provides a clean metal-Si interface and removes the loss-inducing tails by a two-step selective etching method. This results in a decrease in microwave loss by more than an order of magnitude when measured in co-planar waveguide microwave resonator structures. We present these microwave test results and also SEM and TEM images of the microstrip interfaces and edge profiles before and after application of the improved process.

Hess, Larry A.↗
NASA NTRS1985

Lightning Protection for Composite Aircraft Structures

Lightning protection system consisting of two layers of aluminum foil separated by layer of dielectric material protects graphite/epoxy composite structures on aircraft. Protective layer is secondarily applied lightning protection system, prime advantage of which is nullification of thermal and right angle effect of lightning arc attachment to graphite/epoxy laminate.

Olson, G. O.↗
NASA NTRS2024

Optimizing Thin Cover Layers for Optically Clear Electrodynamic Dust Shields

This project looked at optimizing the dielectric cover layer on top of an optically clear glass electrodynamic dust shield (EDS). The EDS is a device that uses high voltage electric fields to remove dust from surfaces. Currently, the EDS uses 2000 volts to remove dust, but by optimizing the cover layer and the geometry of the EDS, this voltage can be lowered to improve safety and reduce electromagnetic interference (EMI) and the complexity of supporting systems. This project was able to demonstrate successful dust clearing on an EDS with 750 volts in high vacuum (~1E-5 torr) conditions. The EDS had a trace spacing of 500 μm, and the Parylene C cover layer had a thickness of 25 μm. There is still a substantial amount of room for improvement of these devices, which may be able to push the operating voltage even lower.

Particulate Contamination↗
NASA NTRS2007

Fabrication of Buried Nanochannels From Nanowire Patterns

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Choi, Daniel↗
NASA NTRS2011

Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging

Most optical systems require antennas with directive patterns. This means that the physical area of the antenna will be large in terms of the wavelength. When non-cooled systems are used, the losses of microstrip or coplanar waveguide lines impede the use of standard patch or slot antennas for a large number of elements in a phased array format. Traditionally, this problem has been solved by using silicon lenses. However, if an array of such highly directive antennas is to be used for imaging applications, the fabrication of many closely spaced lenses becomes a problem. Moreover, planar antennas are usually fed by microstrip or coplanar waveguides while the mixer or the detector elements (usually Schottky diodes) are coupled in a waveguide environment. The coupling between the antenna and the detector/ mixer can be a fabrication challenge in an imaging array at submillimeter wavelengths. Antennas excited by a waveguide (TE10) mode makes use of dielectric superlayers to increase the directivity. These antennas create a kind of Fabry- Perot cavity between the ground plane and the first layer of dielectric. In reality, the antenna operates as a leaky wave mode where a leaky wave pole propagates along the cavity while it radiates. Thanks to this pole, the directivity of a small antenna is considerably enhanced. The antenna consists of a waveguide feed, which can be coupled to a mixer or detector such as a Schottky diode via a standard probe design. The waveguide is loaded with a double-slot iris to perform an impedance match and to suppress undesired modes that can propagate on the cavity. On top of the slot there is an air cavity and on top, a small portion of a hemispherical lens. The fractional bandwidth of such antennas is around 10 percent, which is good enough for heterodyne imaging applications.The new geometry makes use of a silicon lens instead of dielectric quarter wavelength substrates. This design presents several advantages when used in the submillimeter-wave and terahertz bands: a) Antenna fabrication compatible with lithographic techniques. b) Much simpler fabrication of the lens. c) A simple quarter-wavelength matching layer of the lens will be more efficient if a smaller portion of the lens is used. d) The directivity is given by the lens diameter instead of the leaky pole (the bandwidth will not depend anymore on the directivity but just on the initial cavity). The feed is a standard waveguide, which is compatible with proven Schottky diode mixer/detector technologies. The development of such technology will benefit applications where submillimeter- wave heterodyne array designs are required. The main fields are national security, planetary exploration, and biomedicine. For national security, wideband submillimeter radars could be an effective tool for the standoff detection of hidden weapons or bombs concealed by clothing or packaging. In the field of planetary exploration, wideband submillimeter radars can be used as a spectrometer to detect trace concentrations of chemicals in atmospheres that are too cold to rely on thermal imaging techniques. In biomedicine, an imaging heterodyne system could be helpful in detecting skin diseases.

Chattopadhyay, Goutam↗
NASA NTRS1979

Radiative transfer theory for scattering by layered media

Remote sensing of brightness temperatures of a scattering medium composed of spherical scatterers beneath a homogeneous surface layer is studied by using Mie scattering functions. We illustrate the effects of a surface layer by plotting the brightness temperatures as functions of frequency and viewing angle for different layer thicknesses, dielectric constants, and fractional scattering volumes. It is found that the brightness temperature increases when the loss tangent of the surface layer is increased and when the fractional volume occupied by the scatterers is decreased. In the absence of a surface layer the brightness temperature is usually decreasing as a function of frequency. The presence of a homogeneous layer may cause the brightness temperature to increase with frequency. At all viewing angles the vertical polarization is brighter than the horizontal polarization.

Tsang, L.↗
NASA NTRS1989

Spiral configuration of electrodes and dielectric material for sensing an environmental property

A reliable moisture-indicating capactive sensor is provided with wire electrodes at least one of which includes a coating of moisture-absorbing dielectric material by spirally twisting the wire electrodes about each other, thereby establishing a pair of electrodes in contact with opposite surfaces of a layer of dielectric material, and assuring consistent contact of each electrode with the dielectric material despite changes in environmental conditions.

Laue, Eric G.↗
NASA NTRS2004

Micro-Scale Regenerative Heat Exchanger

A micro-scale regenerative heat exchanger has been designed, optimized and fabricated for use in a micro-Stirling device. Novel design and fabrication techniques enabled the minimization of axial heat conduction losses and pressure drop, while maximizing thermal regenerative performance. The fabricated prototype is comprised of ten separate assembled layers of alternating metal-dielectric composite. Each layer is offset to minimize conduction losses and maximize heat transfer by boundary layer disruption. A grating pattern of 100 micron square non-contiguous flow passages were formed with a nominal 20 micron wall thickness, and an overall assembled ten-layer thickness of 900 microns. Application of the micro heat exchanger is envisioned in the areas of micro-refrigerators/coolers, micropower devices, and micro-fluidic devices.

Moran, Matthew E.↗