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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A molecular design approach towards elastic and multifunctional polymer electronics

Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C–H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm 2 V -1 s -1 after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.

42 ENGINEERING↗
DOE OSTI2021

First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

Nano-membrane tri-gate β-gallium oxide (β-Ga 2 O 3 ) field-effect transistors (FETs) on SiO 2 /Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga 2 O 3 and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al 2 O 3 ) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec –1 , high drain current (I DS ) ON/OFF ratio of 1.5 × 10 9 , and negligible transfer characteristic hysteresis. Furthermore, we also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Disk-integrated Thermal Properties of Ceres Measured at Millimeter Wavelengths

We observed Ceres at three epochs in 2015 November and 2017 September and October with Atacama Large Millimeter/submillimeter Array (ALMA) 12 m array and in 2017 October with the ALMA Compact Array (ACA), all at ∼265 GHz continuum (wavelengths of ∼1.1 mm) to map the temperatures of Ceres over a full rotation at each epoch. We also used 2017 October ACA observations to search for HCN. The disk-averaged brightness temperature of Ceres is measured to be between 170 and 180 K during our 2017 observations. The rotational light curve of Ceres shows a double-peaked shape with an amplitude of about 4%. Our HCN search returns a negative result with an upper limit production rate of ∼2 × 10{sup 24} molecules s{sup −1}, assuming globally uniform production and a Haser model. A thermophysical model suggests that Ceres’s top layer has higher dielectric absorption than lunar-like materials at a wavelength of 1 mm. However, previous observations showed that the dielectric absorption of Ceres decreases toward longer wavelengths. Such distinct dielectric properties might be related to the hydrated phyllosilicate composition of Ceres and possibly abundant micrometer-sized grains on its surface. The thermal inertia of Ceres is constrained by our modeling as likely being between 40 and 160 thermal inertia units, much higher than previous measurements at infrared wavelengths. Modeling also suggests that Ceres’s light curve is likely dominated by spatial variations in its physical or compositional properties that cause changes in Ceres’s observed thermal properties and dielectric absorption as it rotates.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lateral Beam Shifts and Depolarization Upon Oblique Reflection from Dielectric Mirrors

Abstract Dielectric mirrors comprising thin‐film multilayers are widely used in optical experiments because they can achieve substantially higher reflectance compared to metal mirrors. Here, potential problems are investigated that can arise when dielectric mirrors are used at oblique incidence, in particular for focused beams. It is found that light beams reflected from dielectric mirrors can experience lateral beam shifts, beam‐shape distortion, and depolarization, and these effects have a strong dependence on wavelength, incident angle, and incident polarization. Because vendors of dielectric mirrors typically do not share the particular layer structure of their products, several dielectric‐mirror stacks are designed and simulated, and then the lateral beam shift from two commercial dielectric mirrors and one coated metal mirror is also measured. This paper brings awareness of the tradeoffs between dielectric mirrors and front‐surface metal mirrors in certain optics experiments, and it is suggested that vendors of dielectric mirrors provide information about beam shifts, distortion, and depolarization when their products are used at oblique incidence.

Physics↗
DOE OSTI2024

Alumina–Titania Nanolaminate Condensers for Hot Programmable Catalysis

Nanolaminates composed of thin alternating layers of Al2O 3 and TiO 2 (ATO) were engineered by using atomic layer deposition as the dielectric material for a Pt-on-carbon catalytic condenser. Investigation assessed synthesis parameters including the deposition temperature, Al 2 O 3 and TiO 2 layer thicknesses, total number of layers, and a capping Al 2 O 3 layer on the maximum charge accumulation in the Pt catalyst. The highest capacitance ATO configuration demonstrated a specific capacitance of ∼1200 nF/cm 2 with working voltages of ±5 V, enabling the storage of 4 × 10 13 electrons or holes per cm 2 at room temperature. The ATO devices exhibited enhanced capacitance at elevated temperatures of up to 400 °C, suggesting the suitability of these materials for high-temperature applications. Adsorption of carbon monoxide on the Pt/C-ATO device characterized by grazing incidence infrared spectroscopy showed changes in the surface binding energy of 13.1 ± 0.8 kJ/mol for an applied external voltage bias of ±1 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

On the Interplay of Electronic and Lattice Screening on Exciton Binding in Two-Dimensional Lead Halide Perovskites

We use path integral Monte Carlo to study the energetics of excitons in layered, hybrid organic–inorganic perovskites in order to elucidate the relative contributions of dielectric confinement and electron–phonon coupling. While the dielectric mismatch between polar perovskite layers and nonpolar ligand layers significantly increases the exciton binding energy relative to their three-dimensional bulk crystal counterparts, formation of exciton polarons attenuates this effect. The contribution from polaron formation is found to be a nonmonotonic function of the lead halide layer thickness, which is clarified by a general variational theory. Accounting for both of these effects provides a description of exciton binding energies in good agreement with experimental measurements. By studying isolated layers and stacked layered crystals of various thicknesses, with ligands of varying polarity, we provide a systematic understanding of the excitonic behavior of this class of materials and how to engineer their photophysics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Development of the Intelligent, Preventive Infrared (IR) Inspection System Housed in Hybrid Robotic Platforms

Robots and robotic systems that are designed for inspection, environmental study, and health and safety aid are becoming an increasing necessity. However, there is a number of challenges that accompany robots that are designed for these specific applications. These challenges include: navigating compact, enclosed spaces, travelling over multiple terrains and large obstacles, using the proper sensing and detection methods to assess an environment, and the use of lightweight and durable materials. The robotic platforms currently in development look at all of these challenges and attempt to overcome them. These designs specific use of hybrid robotic platforms, or platform that utilizes soft and rigid materials, allows for a more flexible platform and makes environments more navigable. To further improve the navigation of the platforms and environmental assessment, a novel infrared detection system is housed in the platforms to create a robot that can be used for the applications listed above and more. Objectives: Further develop two types of robotic platforms that utilize additive manufacturing, soft materials, and rigid materials. Continue the development of an intelligent and inhibitory infrared detection system based on an artificial intelligence (AI) algorithm. Continued study and fabrication of active soft materials designed for both sensing and actuation in hybrid robotic systems. Improve additive manufacturing fabrication to design rigid and semi-rigid components for hybrid robotic platforms. Transformable Wheel Robotic Platform: The chassis, wheels, tires and inspection system housing use different additive manufacturing techniques for fabrication. Continued work with additive manufacturing has lead to studies in metal-based printing and modular design and manufacturing. The new platform design with integrated electrical component printed. This will allow integration of the sensor housing onto the platform. Electrical components are being tested for battery life and performance. To improve this performance, such as integration of Lithium Polymer (LiPo) batteries. Snake Robotic Platform: The main focus of the development has centered around liquid-based soft actuators. That act on the principles of electrostatic and hydraulic actuation. A liquid dielectric sits between two compliant electrodes, contained by a flexible polymer shell. The electrodes and film gradually collapse toward each other from one corner of the electrode to the other. When the electrodes and film close together, a majority of the fluid is pushed into the area not covered by an electrode. A thin layer of the liquid dielectric remains between the electrode. The actuators will be stacked to cause large displacement, and move the linkages. The chassis of this platform uses purely additively manufactured linkages. Intelligent, Preventive IR Inspection System: Development of the AI for the system has lead to using a Scikit-Learn which assists in creating predictive models based on Regression, clustering, classification etc. To improve the infrared thermometry for low emissivity sources, work on the fabrication of a tandem photoconductive infrared thermometer was a main focus. Distance-Voltage-Temperature response data has been collected in the range of 7 cm - 100 cm and 200-400 deg. C. Modifications were made to the existing test bench to have a better control over the data. Automated data collection was realized using a Python code and an Arduino controlled stepper motor to increase the sample rate. A protective enclosure has been built around the setup to minimize the effect of the environment on the measurements. To better predict temperature, different AI models are being optimized. The regression model, LARS showed a high accuracy but had convergence issues and only works for the current test set-up. Results: The Transformable Wheel Robot has developed into a more flexible and modular platform. With the improvements to the current work, effort on the tire or soft gripper design been a large focus. The soft grippers will be interchange able to allow for increased performance in identified terrain types. The development of the liquid-based actuators allows the snake robotic platform to achieve the goals of being flexible and able to navigate confined spaces. However, there is room for improvement. Optimization work is currently being done in COMSOL Multiphysics. With the current IR system set-up the LARS model perfectly predicts the data; however, considering the mobility aspect of the project other models will allow for an optimized system. Testing of other model types is currently being done.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2022

Damage Detection and Electrical Performance Impact of Flat-Flexible Circuits

Flat-flexible circuits or ‘flex circuits’ have varied applications in electronics and in explosive detonation systems. They pose advantages over conventional coaxial cables in their ability to fit into small mechanical envelopes and routings. A typical flex circuit is composed of a laminated assembly of multiple layers of conductor and dielectric materials. Copper, because of its high electrical conductivity, is one of the primary materials used in flex circuit conductors. The conductor must maintain structural integrity and electrical continuity when the flexible circuit is bent during processing or to fit an application envelope. Under some strain conditions a cable may have degraded electrical performance even though visible damage may not be evident. Dislocation density can increase by mechanisms such as dislocation forest hardening, where gliding dislocations in primary slip planes get pinned at obstacles and form Frank-Read sources. Dislocation density increases within the conductor layers may impact electrical resistivity but would not necessarily result in visible mechanical failure. In some detonation applications, such as for building implosion for demolition, the time for signal transmission and voltage used for firing detonators can be critical. If the resistance in a single flex cable within a building demolition array is too high, the resultant demolition shape may be asymmetric, leading to unplanned damage to nearby structures and potential hazards to public safety. This study will apply non-destructive evaluation techniques to evaluate the detectability of damage accumulation in flat, flexible copper-conductor cables and discuss potential implications to their practical use.

42 ENGINEERING↗
DOE OSTI2024

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.

Wong, Matthew S.↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors

Metal halide perovskite (MHP) multiple quantum wells which consist of multilayers of alternate organic and inorganic layers exhibit large exciton binding energies due to the dielectric confinement between the inorganic and organic layers. These naturally formed multiple quantum wells have strong spin-orbit coupling (SOC) due to the presence of heavy elements in their crystal structures. Although the fundamental properties of 2D MHPs are far from being entirely understood, it is widely accepted that their band edge absorption coefficient results from strong exciton interactions. However, studies demonstrating how different exciton interactions and doping effects influence electronic traps and disorder on the band edge absorption coefficient of 2D MHPs have not been demonstrated. Understanding these interactions in MHPs will allow us to access low energy optical transitions for the fabrication of solution processable short-to-mid-wavelength IR photodetectors (1 – 8 μm). Moreover, upon doping, it is possible to move the Fermi energy into the conduction band (CB) to favorably promote the transport of charges in a working device. Herein, we study the development of 2D MHPs having strong SOC, high carrier mobility, and tunable quantum well structures. Our studies shed light on the design and modulation of fundamental physical phenomena by carefully elucidating the role of dopants (n-type and p-type), exciton heterogeneity, orientation, structure, and bias stress effects on the performance of MHPs as potential IR photodetectors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optical and magneto-optical properties of ferromagnetic monolayer CrBr 3 : A first-principles G W and G W plus Bethe-Salpeter equation study

The discovery of atomically thin two-dimensional (2D) magnetic semiconductors has triggered enormous research interest recently. In this paper, we use first-principles many-body perturbation theory to study a prototypical 2D ferromagnetic semiconductor, monolayer chromium tribromide (CrBr 3 ). With broken time-reversal symmetry, spin-orbit coupling, and excitonic effects included through the full-spinor GW and GW plus Bethe-Salpeter equation (GW-BSE) methods, we compute the frequency-dependent layer polarizability tensor and dielectric function tensor that govern the optical and magneto-optical (MO) properties. In addition, we provide a detailed theoretical formalism for simulating magnetic circular dichroism, MO Kerr effect, and Faraday effect, demonstrating the approach with monolayer CrBr 3 . Due to reduced dielectric screening in 2D and the localized nature of the Cr d orbitals, we find strong self-energy effects on the quasiparticle band structure of monolayer CrBr 3 that give a 3.8 eV indirect bandgap. Also, excitonic effects dominate the low-energy optical and MO responses in monolayer CrBr 3 where a large exciton binding energy of 2.3 eV is found for the lowest bright exciton state with excitation energy at 1.5 eV. We further find that the MO signals demonstrate strong dependence on the excitation frequency and substrate refractive index. Furthermore, our theoretical framework for modeling optical and MO effects could serve as a powerful theoretical tool for future study of optoelectronic and spintronics devices consisting of van der Waals 2D magnets.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Significantly enhanced near-field coupling via tip engineering

The ability to significantly enhance near-field coupling between light and matter at the nanoscale is crucial for advancing the fields of nanophotonics and nanopolariotonics. However, conventional probes face challenges in achieving optimal light–matter interaction. In this study, we propose a novel, to the best of our knowledge, simulation-based strategy that leverages tip engineering to dramatically amplify the scattering field through tailored double-layer geometries. By employing a core-shell structure with a thin shell layer optimized for specific dielectric permittivity and effective polarizability, we demonstrate a near-field enhancement of up to 10 times compared to conventional probes. Our findings highlight exciting new possibilities for optimizing near-field interactions through probe designs with customized resonances, paving the way for substantially improved nano-optical sensing, imaging, and detection.

Shiravi, H.↗
DOE OSTI2023

Beyond Conventional Sensing: Hybrid Plasmonic Metasurfaces and Bound States in the Continuum

Fano resonances result from the strong coupling and interference between a broad background state and a narrow, almost discrete state, leading to the emergence of asymmetric scattering spectral profiles. Under certain conditions, Fano resonances can experience a collapse of their width due to the destructive interference of strongly coupled modes, resulting in the formation of bound states in the continuum (BIC). In such cases, the modes are simultaneously localized in the nanostructure and coexist with radiating waves, leading to an increase in the quality factor, which is virtually unlimited. In this work, we report on the design of a layered hybrid plasmonic-dielectric metasurface that facilitates strong mode coupling and the formation of BIC, resulting in resonances with a high quality factor. We demonstrate the possibility of controlling Fano resonances and tuning Rabi splitting using the nanoantenna dimensions. We also experimentally demonstrate the generalized Kerker effect in a binary arrangement of silicon nanodisks, which allows for the tuning of the collective modes and creates new photonic functionalities and improved sensing capabilities. Our findings have promising implications for developing plasmonic sensors that leverage strong light-matter interactions in hybrid metasurfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗
DOE OSTI2025

Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics

Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.

high pressure↗
DOE OSTI2024

Diamond-like carbon coating for passive and active electronics

Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp 2 and sp 3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.

Timpson, Erik Joseph↗