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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Improving Charge Transport and Environmental Stability of Carbohydrate-Bearing Semiconducting Polymers in Organic Field-Effect Transistors

Semiconducting polymers offer synthetic tunability, good mechanical properties, and biocompatibility, enabling the development of soft technologies previously inaccessible. Side-chain engineering is a versatile approach for optimizing these semiconducting materials, but minor modifications can significantly impact material properties and device performance. Carbohydrate side chains have been previously introduced to improve the solubility of semiconducting polymers in greener solvents. Despite this achievement, these materials exhibit suboptimal performance and stability in field-effect transistors. In this work, structure–property relationships are explored to enhance the device performance of carbohydrate-bearing semiconducting polymers. Toward this objective, a series of isoindigo-based polymers with carbohydrate side chains of varied carbon-spacer lengths is developed. Material and device characterizations reveal the effects of side chain composition on solid-state packing and device performance. With this new design, charge mobility is improved by up to three orders of magnitude compared to the previous studies. Processing–property relationships are also established by modulating annealing conditions and evaluating device stability upon air exposure. Notably, incidental oxygen-doping effects lead to increased charge mobility after 10 days of exposure to ambient air, correlated with decreased contact resistance. Bias stress stability is also evaluated. This work highlights the importance of understanding structure–property relationships toward the optimization of device performance

36 MATERIALS SCIENCE↗
DOE OSTI2020

Establishing charge-transfer excitons in 2D perovskite heterostructures

Charge-transfer excitons (CTEs) immensely enrich property-tuning capabilities of semiconducting materials. However, such concept has been remaining as unexplored topic within halide perovskite structures. Here, we report that CTEs can be effectively formed in heterostructured 2D perovskites prepared by mixing PEA 2 PbI 4 :PEA 2 SnI 4 , functioning as host and guest components. Remarkably, a broad emission can be demonstrated with quick formation of 3 ps but prolonged lifetime of ~0.5 μs. This broad PL presents the hypothesis of CTEs, verified by the exclusion of lattice distortion and doping effects through demonstrating double-layered PEA 2 PbI 4 /PEA 2 SnI 4 heterostructure when shearing-away PEA 2 SnI 4 film onto the surface of PEA 2 PbI 4 film by using hand-finger pressing method. The below-bandgap photocurrent indicates that CTEs are vital states formed at PEA 2 PbI 4 :PEA 2 SnI 4 interfaces in 2D perovskite heterostructures. Electroluminescence shows that CTEs can be directly formed with electrically injected carriers in perovskite LEDs. Clearly, the CTEs presents a new mechanism to advance the multifunctionalities in 2D perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The effect of Ni doping on the mechanical behavior of tungsten

The effect of nickel (Ni) on activated sintering of tungsten has been known and investigated for decades. However, there are few reports on the mechanical properties of tungsten when Ni is added as a low alloying additive with less than 1 wt%. In this work, the mechanical behaviors of tungsten doped with 0.2–1.0 wt% nickel from room temperature up to 400 °C were investigated. The results show that the compression ductility of as-sintered Ni doped tungsten is drastically higher than that of as-sintered pure tungsten at all tested temperatures including room temperature, and the fracture toughness at room temperature is increased by 92%. The results suggest that the ductile-to-brittle transition temperature (DBTT) of tungsten can be reduced substantially by doping with Ni.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The optimal co-doping of SrFe 1-x Co x O 3-δ oxygen carriers in redox applications

Although the oxygen carrier SrCoO 3 has higher redox activity than SrFeO 3 , cobalt is both more expensive and scarcer than iron, which would hinder the wide implementation of SrCoO 3 . For these reasons, doping SrFeO 3 with Co is a potential compromise, benefitting the redox properties of SrFeO 3 , while still limiting the overall amount of cobalt being used. In this work, to find the optimal level of Co-doping, density functional theory calculations were performed to investigate the Co-doping effect on the oxygen vacancy formation and oxygen migration in SrFe 1- x Co x O 3- δ ( x = 0, 0.125, 0.25, 0.375, 0.5). Our findings show that the oxygen vacancy formation energies ( E f ) decrease with the increase of Co content resulting from the increased composition of the O-2p band at the Fermi level upon Co doping. In particular, the E f decreases nearly 0.5 eV between the x = 0 and x = 0.25 samples while E f only decreases 0.1 eV further as Co content is increased to x = 0.5. We obtain that x = 0.25 is an optimal cost/benefit ratio for Co doping, which is preserved at both low oxygen vacancy concentrations ( δ = 0.0625 values listed above) and at high concentrations of δ = 0.1875 and 0.375. Kinetically, the oxygen migration barrier has slight change upon Co doping due to the similar size of Co and Fe. Therefore, considering both redox activity and economics in reversible oxygen storage applications, x = 0.25 is suggested as the optimal Co-doping value in SrFe 1- x Co x O 3- δ .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Phase Diagram and Magnetocaloric Effect of Mn{sub 2}Tb-Fe{sub 2}Tb System

Mn{sub 2}Tb-Fe{sub 2}Tb phase diagram was drawn, and the crystal structure and magnetocaloric effect of (Mn{sub 1-x}Fe{sub x}){sub 2}Tb (x ≤ 0.5) compounds at the Mn-rich side were systematically studied. X-ray diffraction demonstrates that all these Laves phase compounds crystallize in the cubic MgCu{sub 2}-type structure. The Rietveld results of XRD shows the cell volume increases with Fe content. The influence of doping effect in (Mn{sub 1-x}Fe{sub x}){sub 2}Tb (x ≤ 0.5) compounds on their magnetic and magnetocaloric properties for all solid solutions is presented. The Curie temperature (Tc) rises from 49 K (for x = 0.0) to 322 K (for x = 0.5), depending on Fe content significantly. Based on Landau’s theory, the magnetization behavior and magnetic transition were analyzed. The magnetocaloric effect (MCE) of (Mn{sub 1-x}Fe{sub x}){sub 2}Tb compounds is also discussed using the Maxwell relation, and the maximum magnetic entropy change (− ΔS{sub M}{sup Max}) approaches to 10 J kg{sup −1} K{sup −1} at x = 0 under a field ranging from 0 to 5 T. The best relative cooling power (RCP) reaches 535.03 J/kg (x = 0.1).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effects of La Doping and Zn or O Vacancy on the Magnetic Property of ZnO

Research on the magnetic origin and mechanism of La-doped ZnO system has been controversial. To solve this problem, we studied the effects of La doping and Zn or O vacancy on the magnetic property of ZnO using geometry optimization and energy calculation on the basis of first-principle generalized gradient approximation method of density functional theory. The electronic structures and magnetic properties of undoped ZnO, La-doped ZnO system, and systems with coexisting La doping and Zn or O vacancies were calculated. Results showed that the systems of La-doped ZnO and the coexistence of La doping and O vacancy are nonmagnetic. In addition, the system of La replacing Zn and one Zn vacancy exhibits long-range orderly ferromagnetism, and the Curie temperature of the doping system can achieve room temperature. The magnetism source of the systems with La doping and Zn vacancy coexisting in ZnO demonstrates strong hybrid coupling electron exchange effects existing among Zn-4s, Zn-3p, O-2p, and La-5s orbits that are nearest to the Zn vacancy. The next nearest distance between doping and Zn vacancy leads to the lowest formation energy and highest stability under the same doping condition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Sn Doping on the Crystallization Kinetics of Amorphous TlInS{sub 2} Films

The crystallization of amorphous Sn-doped TlInS{sub 2} films into three polymorphs has been studied by kinematic electron diffraction. The results demonstrate that the crystallization of 30-nm-thick amorphous films produced by thermal evaporation in high vacuum can be described by the Avrami–Kolmogorov equation: V{sub τ} = V{sub 0}[1–exp(–kτ{sup m})]. Kinematic electron diffraction patterns of the TlIn{sub 1–х}Sn{sub x}S{sub 2} films have been used to assess the effect of doping with Sn on the growth dimensionality and the activation energy for the crystallization of the amorphous films and the unit-cell parameters of the resultant crystalline materials. Doping extends the temperature range and effective activation energy for the crystallization of the amorphous films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Mn-induced ferromagnetism and enhanced thermoelectric properties in Ru 1- x Mn x Sb 2+ δ

We report the experimental investigation of Mn doping effect on the electrical, magnetic, and thermal properties of Ru 1-x Mn x Sb 2+δ single crystals. While RuSb 2+δ is a diamagnetic semiconductor, partial replacement of Ru by Mn results in ferromagnetism with the Curie temperature 536 K and 540 K for x = 0.04 and 0.08, respectively. Correspondingly, the electrical resistivity decreases dramatically and shows metallic character due to the increased electron concentration. Surprisingly, the magnitude of the thermopower increases upon Mn doping, reaching -250 μV K -1 at 300 K for x = 0.08, while the thermal conductivity remains unchanged above 100 K. These indicate a strong modification of electronic structure by doped Mn, leading to enhanced thermoelectric properties. The carriers induced by Mn not only decrease the resistivity, but also mediate the long-range ferromagnetic ordering in Ru 1-x Mn x Sb 2+δ .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Energetics of CO 2 and H 2 O adsorption on alkaline earth metal doped TiO 2

The process of CO 2 and H 2 O adsorption on the surface of nano-oxide semiconductors is important in the overall performance of artificial photosynthesis and other applications. In this study, we explored the thermodynamics of CO 2 and H 2 O adsorption on TiO 2 as a function of surface chemistry. We applied gas adsorption calorimetry to investigate the energetics of adsorption of those molecules on the surface of anatase nanoparticles. In an attempt to increase TiO 2 surface affinity to CO 2 and H 2 O, TiO 2 was doped with alkaline earth metals (MgO, CaO, SrO, and BaO) by manipulating the chemical synthesis. Adsorption studies using diffuse reflectance infrared spectroscopy at different temperatures indicate that due to the segregation of alkaline earth metals on the surface of TiO 2 nanoparticles, both CO 2 and subsequent H2O adsorption amounts could be increased. CO 2 adsorbs in two different manners, forming carbonates which can be removed at temperatures lower than 700 °C, and a more stable linear adsorption that remains even at 700 °C. Additionally to the surface energetic effects, doping also increased specific surface area, resulting in further improvement in net gas adsorption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Enhanced thermoelectric performance of Mg 2 Si 1-x Sn x codoped with Bi and Cr

Magnesium silicides are favorable thermoelectric materials considering resource abundance and cost. Chromium (Cr) doping in magnesium silicides has not yet been explored. Using first-principles calculations, we have studied the stability of Mg 2 Si with chromium (1.85, 3.7, 5.55, and 6.25% Cr) and tin (12.5 and 50% Sn). Three Mg 2 Si compounds doped with Sn, (Sn + Bi), and (Sn + Bi + Cr) are used to explain doping effects on thermoelectric performance. Notably, Cr behaves nonmagnetically for ≤2%Cr, after which ferromagnetic ordering is favored (≤12.96% Cr), despite its elemental antiferromagnetic state. With alloying of Sn (70.4%), Mg 2 Si remains an indirect-band-gap semiconductor, but adding small amounts of Bi (3.7%) increases the carrier concentration such that electrons occupy conduction bands, making it a degenerate semiconductor. Mg 2 Si 0.296 Sn 0.666 Bi 0.037 is found to give the highest thermoelectric figure of merit (ZT) and power factor (PF) at 700 K, i.e., 1.75 and 7.04 mWm –1 K –2 , respectively. Adding small %Cr decreases ZT and PF to 0.78 and 4.33 mWm –1 K –2 , respectively. Such a degradation in thermoelectric (TE) performance is attributed to two factors: (i) uniform doping acting as an electron acceptor, decreasing conduction, and (ii) the loss of low-lying conduction band degeneracy with doping, decreasing the Seebeck coefficients. In conclusion, a study of configurations of Cr doping suggests that Cr has a tendency to form clusters inside the lattice, which play a crucial role in tuning the magnetic and TE performance of doped Mg 2 Si compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2025

First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

Majorana zero modes are predicted to emerge in semiconductor/ superconductor interfaces, such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits. However, their realization is hindered by materials challenges. The coupling between the superconductor and the semiconductor may be too strong for Majorana modes to emerge, due to effective doping of the semiconductor by the metallic contact. This could be mediated by adding a tunnel barrier of controlled thickness. We use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO), to assess ZnTe and CdSe as prospective tunnel barriers for the InAs/Al interface. The results of DFT +U(BO) for ZnTe are validated by comparison to angle resolved photoemission spectroscopy (ARPES). We then study bilayer interfaces of the three semiconductors with each other and with Al, as well as trilayer interfaces with a varying number of ZnTe or CdSe layers inserted between InAs and Al. We find that 16 atomic layers of either material completely insulate the InAs from metal induced gap states (MIGS). However, ZnTe and CdSe differ significantly in their band alignment, such that ZnTe forms an effective barrier for electrons, whereas CdSe forms a barrier for holes. Because of Fermi level pinning in the conduction band at the interface, only electron transport is relevant for InAs-based Majorana devices. Therefore, ZnTe is the better choice. Based on the results of our simulations, we suggest conducting experiments with ZnTe barriers in the thickness range of 6–18 atomic layers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Carbene Functionalization of Monolayer Tungsten Disulfide for Enhanced Quantum Emission

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising materials for an array of applications, ranging from conventional field-effect transistors, photodetectors, and light-emitting diodes to their more recent use in quantum photonic technologies. Chemical functionalization of 2D TMDs with organic ligands and adlayers provides an additional means for customizing their electronic and optical properties. While many pathways have been reported for the chemical functionalization of 2D TMDs, their frequent reliance on solution-based methods results in limited control over adlayer thickness and coverage, thus hindering utility in high-performance applications. Here, in this study, we describe the vapor-phase functionalization of a 2D TMD with carbene ligands, specifically tungsten disulfide (WS 2 ) with N-heterocyclic carbenes (NHCs), resulting in molecularly smooth, thin, and uniform adlayers. Reacting NHCs with monolayer WS 2 reduces the broad photoluminescence background observed at cryogenic temperatures by 58%, which facilitates the detection of single-photon emitters from strained monolayer WS 2 , as indicated by second order correlation values ( g (2) ) as low as 0.17 ± 0.07. Chemical characterization coupled with density functional theory calculations suggests that the NHC adlayer has a dual defect-passivation and doping effect on monolayer WS 2 that results in enhanced single-photon emission. Overall, this study establishes vapor-phase carbene functionalization as a homogeneous surface modification scheme for tailoring the quantum emission properties of semiconducting 2D TMDs.

N-heterocyclic carbenes↗
DOE OSTI2019

Effect of Fe Doping and Point Defects (V{sub O} and V{sub Sn}) on the Magnetic Properties of SnO{sub 2}

We investigated the effects of Fe doping and point defects (oxygen and tin vacancies, V{sub O} and V{sub Sn}, respectively) on the ferromagnetism of SnO{sub 2} through first-principles calculations by using generalized gradient approximation + U under density functional theory. Calculation results show that Fe-doped SnO{sub 2} with V{sub O} or V{sub Sn} exhibit long-range ordered ferromagnetism and Curie temperature above room temperature. The system has different magnetic properties with different doping modes, which are beneficial to the magnetic adjustment of dilute magnetic semiconductor (DMS). The double-exchange effects among the electrons of O–2p and Fe–3d states are the origin of ferromagnetism in Sn{sub 15}FeO{sub 31}. Similarly, ferromagnetism in Sn{sub 14}FeO{sub 32} is derived from the double-exchange effects among the electrons of O–2p and Fe–3d states. These effects are produced by hole carriers after complexes form by Fe doping and V{sub O} or V{sub Sn}. Simultaneously, Sn{sub 14}FeO{sub 32} shows a half-metallic behavior, thus resulting in 100% conduction hole polarizability, which is highly beneficial to DMSs as a hole-injection source. Moreover, results also show that the decreased distance between Fe and vacancies (V{sub O} or V{sub Sn}) lowers formation energy and thus increases the system stability.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Hill Plot Focusing on Ce Compounds with High Magnetic Ordering Temperatures and Consequent Study of Ce{sub 2}AuP{sub 3}

The Hill plot is a well-known criterion of the f-electron element interatomic threshold distance separating the nonmagnetic state from the magnetic state in actinides and lanthanides. We have reinvestigated the Hill plot of Ce compounds using the commercial crystallographic database CRYSTMET, focusing on a relationship between the Ce-Ce distance and the magnetic ordering temperature because a Ce compound with no other magnetic elements rarely has a magnetic ordering temperature that is higher than 20 K. The Hill plot of approximately 730 compounds has revealed that a Ce compound, particularly a ferromagnet, showing a high magnetic ordering temperature would require a short Ce-Ce distance with a suppression of the valence instability of the Ce ion. From the study, we developed interest in Ce{sub 2}AuP{sub 3} with a Curie temperature of 31 K. The ferromagnetic nature of this material has been examined in terms of a doping effect, which suggests a possible increase in magnetic anisotropy energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Achieving a high open-circuit voltage in inverted wide-bandgap perovskite solar cells with a graded perovskite homojunction

Wide-bandgap (~1.7-1.8 eV) perovskite solar cells have attracted substantial research interest in recent years due to their great potential to fabricate efficient tandem solar cells via combining with a lower bandgap (1.1-1.3 eV) absorber (e.g., Si, copper indium gallium diselenide, or low-bandgap perovskite). However, wide-bandgap perovskite solar cells usually suffer from large open circuit voltage (V oc ) deficits caused by small grain sizes and photoinduced phase segregation. Here, we demonstrate that in addition to large grain sizes and passivated grain boundaries, controlling interface properties is critical for achieving high V oc 's in the inverted wide-bandgap perovskite solar cells. We adopt guanidinium bromide solution to tune the effective doping and electronic properties of the surface layer of perovskite thin films, leading to the formation of a graded perovskite homojunction. The enhanced electric field at the perovskite homojunction is revealed by Kelvin probe force microscopy measurements. This advance enables an increase in the V oc of the inverted perovskite solar cells from an initial 1.12 V to 1.24 V. With the optimization of the device fabrication process, the champion inverted wide-bandgap cell delivers a power conversion efficiency of 18.19% and sustains more than 72% of its initial efficiency after continuous illumination for 70 h without encapsulation. Additionally, a semitransparent device with an indium tin oxide back contact retains more than 88% of its initial efficiency after 100 h maximum power point tracking.

14 SOLAR ENERGY↗