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At least 127 records · Page 7

Polyimides That Contain Pendent Siloxane Groups

Polyimides containing pendent siloxane groups (PISOXs) synthesized from polyimides containing hydroxy groups (PIOHs) according to either of two alternative approaches. Addition of pendent siloxane groups to polyimide decreases dielectric constant, and decreases absorption of moisture: these changes in properties advantageous in some electronic applications. Also enhance resistance to atomic oxygen in that they undergo slight degradation to form thin protective silicon oxide coats when exposed to atomic oxygen.

Connell, John W.↗

RHETT/EPDM Flight Hollow Cathode

Under the sponsorship of the BMDO Russian Hall Electric Thruster Technology program two xenon hollow cathodes, a flight unit and a flight spare were fabricated, acceptance tested and delivered to the Naval Research Laboratory for use on the Electric Propulsion Demonstration Module. These hollow cathodes, based on the International Space Station plasma contactor design, were fabricated at the NASA Lewis Research Center for use with a D-55 anode layer thruster in the first on-orbit operational application of this technology. The 2.2 Ampere nominal emission current of this device was obtained with a xenon flow rate of 0.6 mg/s. Ignition of the cathode discharge was accomplished through preheating the active electron emitter with a resistive heating element before application of a 650 volt ignition pulse between the emitter and an external starting electrode. The successful acceptance testing of the Electric Propulsion Demonstration Module utilizing these cathodes demonstrated the suitability of cathodes based on barium impregnated inserts in an enclosed keeper configuration for use with Hall thruster propulsion systems.

Manzella, David↗

Carbon-Nanotube Schottky Diodes

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Manohara, Harish↗

Particle Morphology and Elemental Composition of Smoke Generated by Overheating Common Spacecraft Materials

Fire safety in the indoor spacecraft environment is concerned with a unique set of fuels which are designed to not combust. Unlike terrestrial flaming fires, which often can consume an abundance of wood, paper and cloth, spacecraft fires are expected to be generated from overheating electronics consisting of flame resistant materials. Therefore, NASA prioritizes fire characterization research for these fuels undergoing oxidative pyrolysis in order to improve spacecraft fire detector design. A thermal precipitator designed and built for spacecraft fire safety test campaigns at the NASA White Sands Test Facility (WSTF) successfully collected an abundance of smoke particles from oxidative pyrolysis. A thorough microscopic characterization has been performed for ten types of smoke from common spacecraft materials or mixed materials heated at multiple temperatures using the following techniques: SEM, TEM, high resolution TEM, high resolution STEM and EDS. Resulting smoke particle morphologies and elemental compositions have been observed which are consistent with known thermal decomposition mechanisms in the literature and chemical make-up of the spacecraft fuels. Some conclusions about particle formation mechanisms are explored based on images of the microstructure of Teflon smoke particles and tar ball-like particles from Nomex fabric smoke.

Smoke↗

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗

Current-driven plasma instabilities at high latitudes

Earlier Ogo 5 discussions of high-latitude magnetospheric wave-particle interaction phenomena associated with field aligned current systems are extended by considering some September 7, 1968, out-bound measurements and corresponding March 11, 1969, observations, when the spacecraft was traversing auroral L shells in midafternoon. It is shown that during moderate magnetospheric disturbances the most intense waves and currents were detected near sharp boundaries in the density of polar cleft electrons, and it is possible that local wave-particle interactions produced anomalous resistivity. Some observed changes in the electron distribution functions might be explained in terms of local acceleration, but significant causal questions about the dynamics remain open if one can use only local data from a single spacecraft in this region.

Scarf, F. L.↗

Super Photon Counters

The perfect photon detector would measure the arrival time, the energy, the polarization, and the position of every arriving quantum, but that is easier said than done. Two groups have now succeeded in doing time-resolved spectroscopy on the Crab Nebula pulsar, measuring everything but the polarization, with reports from Romani et al. at Stanford and from Perryman et al. at ESTEC. Both groups use superconducting detectors to gain the necessary speed and sensitivity. The photon can heat the electrons in a superconductor biased in the middle of its resistive transition, or break bound superconducting electron-hole pairs, which can then be collected. Three years ago, Peacock et al. reported that they had detected single optical photons with a superconducting tunnel junction (STJ), and Paresce wrote a News and Views article. A tunnel junction uses two pieces of conductive material, separated by a tiny gap of insulating material or even vacuum. If the gap is thin enough, electrons can tunnel across anyway, and if the conductors are superconductors, the junction displays very useful quantum mechanical properties and electrical nonlinearities. Amplifiers, detectors, oscillators, and computer circuits can all be made from them. Their special advantage is that they operate at very low temperatures, dissipate very little power, operate very fast, and are very small.

Mather, John↗

Effects of eletron heating on the current driven electrostatic ion cyclotron instability and plasma transport processes along auroral field lines

Fluid simulations of the plasma along auroral field lines in the return current region have been performed. It is shown that the onset of electrostatic ion cyclotron (EIC) related anomalous resistivity and the consequent heating of electrons leads to a transverse ion temperature that is much higher than that produced by the current driven EIC instability (CDICI) alone. Two processes are presented for the enhancement of ion heating by anomalous resistivity. The anomalous resistivity associated with the turbulence is limited by electron heating, so that CDICI saturates at transverse temperature that is substantially higher than in the absence of resistivity. It is suggested that this process demonstrates a positive feedback loop in the interaction between CDICI, anomalous resistivity, and parallel large-scale dynamics in the topside ionosphere.

Ganguli, Supriya B.↗

Cushion module for stowing electronic equipment

To provide vibration-resistance composition adjust processing techniques, which produces essentially void-free materials and provides for clean removal of finished material from mold. Microsphere filler imparts strength to polymer and sodium carbonate imparts flame-resistance.

Rogers, J. R.↗

Stable Polyurethane Coatings for Electronic Circuits

Alkane-based polyurethanes resist deterioration while maintaining good dielectric properties. Weight loss after prolonged immersion in hot water far less for alkane-based polyurethanes than for more common ether based polyurethanes, at any given oxygen content. Major uses of polyurethanes are as connector potting materials and conformal coatings for printed circuit boards.

Morris, D. E.↗

Computer simulation of the Farley-Buneman instability and anomalous electron heating in the auroral ionosphere

The nonlinear saturation of the Farley-Buneman instability in a collisional plasma is studied by a 2 1/2 dimensional electrostatic particle simulation which includes inelastic and elastic collisions of electrons and elastic collision of ions with neutrals. In the simulation, a uniform convection electric field is applied externally so that the relative velocity between the electrons and ions is greater than the ion sound speed and destabilizes the instability. A nonlinear frequency shift from higher to lower frequencies and diffusion of the wave spectrum in two dimensional wave number space are found. It is found that the dominant mechanism for electron heating is due to an enhanced effective electron collision frequency and hence enhanced resistive heating as suggested by Primdahl (1986) and not due to the heating of electrons by the electric field of the waves parallel to the magnetic field. For the ionospheric conditions discussed by Schlegel and St.-Maurice (1981)an anomalous heating rate of about 4 x 10 to the 7th W/cu cm is found.

Machida, S.↗

Materials Characterization at Utah State University: Facilities and Knowledge-base of Electronic Properties of Materials Applicable to Spacecraft Charging

In an effort to improve the reliability and versatility of spacecraft charging models designed to assist spacecraft designers in accommodating and mitigating the harmful effects of charging on spacecraft, the NASA Space Environments and Effects (SEE) Program has funded development of facilities at Utah State University for the measurement of the electronic properties of both conducting and insulating spacecraft materials. We present here an overview of our instrumentation and capabilities, which are particularly well suited to study electron emission as related to spacecraft charging. These measurements include electron-induced secondary and backscattered yields, spectra, and angular resolved measurements as a function of incident energy, species and angle, plus investigations of ion-induced electron yields, photoelectron yields, sample charging and dielectric breakdown. Extensive surface science characterization capabilities are also available to fully characterize the samples in situ. Our measurements for a wide array of conducting and insulating spacecraft materials have been incorporated into the SEE Charge Collector Knowledge-base as a Database of Electronic Properties of Materials Applicable to Spacecraft Charging. This Database provides an extensive compilation of electronic properties, together with parameterization of these properties in a format that can be easily used with existing spacecraft charging engineering tools and with next generation plasma, charging, and radiation models. Tabulated properties in the Database include: electron-induced secondary electron yield, backscattered yield and emitted electron spectra; He, Ar and Xe ion-induced electron yields and emitted electron spectra; photoyield and solar emittance spectra; and materials characterization including reflectivity, dielectric constant, resistivity, arcing, optical microscopy images, scanning electron micrographs, scanning tunneling microscopy images, and Auger electron spectra. Further details of the instrumentation used for insulator measurements and representative measurements of insulating spacecraft materials are provided in other Spacecraft Charging Conference presentations. The NASA Space Environments and Effects Program, the Air Force Office of Scientific Research, the Boeing Corporation, NASA Graduate Research Fellowships, and the NASA Rocky Mountain Space Grant Consortium have provided support.

Dennison, J. R.↗

Coherent anomalous resistivity in the region of electrostatic shocks

Anomalous resistivity in a phase-coherent electrostatic ion cyclotron wave in the region of the auroral electrostatic shocks observed by the S3-3 satellite is considered. It is shown that current-driven shocks and anomalous resistivity will be most important above 5,000 km, where the electron drift velocity is maximized and parallel electric fields are possible. A model for the parallel field based on the dissipation of an Alfven wave pulse by current-driven electrostatic ion cyclotron turbulence is presented. In the model, coherent electrostatic ion cyclotron waves lead to anomalous resistivity by electron trapping, producing parallel electric fields greater than 1 mV/m, and may set up the parallel populations necessary to support oblique electrostatic shocks.

Lysak, R. L.↗

Suppressing Ghost Diffraction in E-Beam-Written Gratings

A modified scheme for electron-beam (E-beam) writing used in the fabrication of convex or concave diffraction gratings makes it possible to suppress the ghost diffraction heretofore exhibited by such gratings. Ghost diffraction is a spurious component of diffraction caused by a spurious component of grating periodicity as described below. The ghost diffraction orders appear between the main diffraction orders and are typically more intense than is the diffuse scattering from the grating. At such high intensity, ghost diffraction is the dominant source of degradation of grating performance. The pattern of a convex or concave grating is established by electron-beam writing in a resist material coating a substrate that has the desired convex or concave shape. Unfortunately, as a result of the characteristics of electrostatic deflectors used to control the electron beam, it is possible to expose only a small field - typically between 0.5 and 1.0 mm wide - at a given fixed position of the electron gun relative to the substrate. To make a grating larger than the field size, it is necessary to move the substrate to make it possible to write fields centered at different positions, so that the larger area is synthesized by "stitching" the exposed fields.

Wilson, Daniel↗

Manganese oxide microswitch for electronic memory based on neural networks

A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

Ramesham, R.↗

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗