Search NASA⌕ Search

SEARCH · Search NASA

Results for “epi”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

123 records · Page 7

Reconciling LCROSS and Orbital Neutron Water Abundance Estimates in Cabeus Crater

The Lunar Prospector Neutron Spectrometer (LPNS) first revealed Cabeus crater (84.9 deg S, 35.5degW) as having the highest inferred hydrogen on the Moon. Because of the broad LPNS footprint (approximately 40 km FWHM), the apparent peak water-equivalent hydrogen (WEH) concentration is only approximately 0.25 wt%, but could be much higher in smaller areas than the spectrometer footprint. Earlier image reconstruction work suggested that areas within permanent shadow have abundances approximately 1 wt% WEH. However, the LCROSS impact yielded total water estimates, ice plus vapor, of between 3 and 10 wt%. The large disagreement between LCROSS and apparent orbital values imply that either the ice is buried, by perhaps as much as 50 to 100 cm; or the ice distribution within Cabeus is spatially inhomogeneous, or both. Modeling reveals that the areal extent of a "shallow permafrost zone" is far greater than the area of permanent shadow. Ice can be virtually stable for billions of years within a few tens of centimeters of the surface in these areas. However, the LCROSS impact took place in an area of permanent shadow. If stably-trapped volatiles can be found in locales that receive occasional, oblique sunlight, landed missions may target these sites and eventual resource exploitation may be done more easily. Are orbital neutron data consistent with areally-extensive, volatile-rich cold traps? Orbital epithermal neutron data over the northern half of Cabeus (near the LCROSS impact site) are consistent with 0.2 wt% WEH or less in the "permafrost zone" near the crater. On the other hand, pixon reconstructions that confine the hydrogen enhancements to permanent shadow result in higher abundance estimates -- around 1 wt% if homogeneously mixed. But if the PSR abundance is increased to 10 wt%, consistent with the sum of all H-bearing compounds seen by LCROSS, a much larger-than-observed reduction in neutron count rate would be seen from orbit. It is likely that volatiles are inhomogeneously distributed, due to both impact processes and emplacement history. Two possibilities may bring consistency to the orbital and LCROSS measurements. Inhomogeneous lateral distribution: Consider the extreme case of a bimodal distribution within the crater -- dry and wet. In this case the epithermal leakage flux seen from orbit is a mixture of two different values, weighted according to fractional areas. Two possible outcomes, depending on whether the inferred leakage flux for the PSR or "permafrost" areas are considered. In the first case, approximately 40% of the PSR may be "wet", the remainder dry (and LCROSS was slightly lucky). However, if the whole area of permafrost is considered, then as little as 20% of the area will be as "wet" as the LCROSS results (and LCROSS was quite lucky). Inhomogeneous depth distribution: The leakage flux of thermal and epithermal neutrons depends on depth of burial of an icy layer beneath dry ferroan anorthosite soil (FAn). For the Cabeus PSR, the pixon reconstruction values for the epithermal flux allows a range of abundance and burial depth, while that of the thermal+epi detector constrains this range. (Uncertainties in iron abundance in the FAn can have significant impact on thermal neutron leakage flux estimates.) Between 20% and 40% of the Cabeus floor may be "wet", or alternatively a 5-10 wt% "wet" layer exists between 50 and 100 cm beneath a layer of dry regolith within the PSR. But volatile abundances of 5 wt% or more, distributed uniformly and homogeneously throughout the Cabeus PSR do not agree with orbital measurements

Elphic, Richard↗

Support Routines for In Situ Image Processing

This software consists of a set of application programs that support ground-based image processing for in situ missions. These programs represent a collection of utility routines that perform miscellaneous functions in the context of the ground data system. Each one fulfills some specific need as determined via operational experience. The most unique aspect to these programs is that they are integrated into the large, in situ image processing system via the PIG (Planetary Image Geometry) library. They work directly with space in situ data, understanding the appropriate image meta-data fields and updating them properly. The programs themselves are completely multimission; all mission dependencies are handled by PIG. This suite of programs consists of: (1)marscahv: Generates a linearized, epi-polar aligned image given a stereo pair of images. These images are optimized for 1-D stereo correlations, (2) marscheckcm: Compares the camera model in an image label with one derived via kinematics modeling on the ground, (3) marschkovl: Checks the overlaps between a list of images in order to determine which might be stereo pairs. This is useful for non-traditional stereo images like long-baseline or those from an articulating arm camera, (4) marscoordtrans: Translates mosaic coordinates from one form into another, (5) marsdispcompare: Checks a Left Right stereo disparity image against a Right Left disparity image to ensure they are consistent with each other, (6) marsdispwarp: Takes one image of a stereo pair and warps it through a disparity map to create a synthetic opposite- eye image. For example, a right eye image could be transformed to look like it was taken from the left eye via this program, (7) marsfidfinder: Finds fiducial markers in an image by projecting their approximate location and then using correlation to locate the markers to subpixel accuracy. These fiducial markets are small targets attached to the spacecraft surface. This helps verify, or improve, the pointing of in situ cameras, (8) marsinvrange: Inverse of marsrange . given a range file, re-computes an XYZ file that closely matches the original. . marsproj: Projects an XYZ coordinate through the camera model, and reports the line/sample coordinates of the point in the image, (9) marsprojfid: Given the output of marsfidfinder, projects the XYZ locations and compares them to the found locations, creating a report showing the fiducial errors in each image. marsrad: Radiometrically corrects an image, (10) marsrelabel: Updates coordinate system or camera model labels in an image, (11) marstiexyz: Given a stereo pair, allows the user to interactively pick a point in each image and reports the XYZ value corresponding to that pair of locations. marsunmosaic: Extracts a single frame from a mosaic, which will be created such that it could have been an input to the original mosaic. Useful for creating simulated input frames using different camera models than the original mosaic used, and (12) merinverter: Uses an inverse lookup table to convert 8-bit telemetered data to its 12-bit original form. Can be used in other missions despite the name.

Deen, Robert G.↗

First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 µm

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

type-I↗

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗

Practical SiC JFET-R Analog Integrated Circuit Design for Extreme Environment Applications

Silicon carbide (SiC) junction field effect transistor and SiC resistor (SiC JFET-R) integrated circuits(ICs) have uniquely demonstrated prolonged operation above 450 °C that promises significant operational improvements to a variety of NASA missions. However, the SiC epiwafers used to fabricate these ICs suffer from epi-growth process immaturity that imparts large and systematic spreads in JFET threshold voltages as a function of the device distance from the center on the wafer. Furthermore, the unprecedently wide range of intended application operating temperatures (in many cases over 600 °C wide) imparts as much as 5-fold change in JFET bias currents. This Technical Memorandum documents methods by which both temperature and radius associated JFET electrical parameter variances can be adequately eliminated, or even exploited in JFET-R circuit designs. Full analog circuit examples, including operational amplifiers, and SPICE simulations across experimentally documented SiC JFET parameter extremes are given to illustrate the efficacy of these methods. The reader may use the examples in this memorandum as either an end point, to get a desired analog signal conditioning design into hardware implemented in SiC JFET-R ICs, or as a basis point from which to derive further improvement.

Michael J Krasowski↗

First Measurements of Jovian Electrons by Parker Solar Probe/ISʘIS Within 0.5 AU of the Sun

Energetic electrons of Jovian origin have been observed for decades throughout the heliosphere, as far as 11 astronomical units (au), and as close as 0.5 au, from the Sun. The treatment of Jupiter as a continuously emitting point source of energetic electrons has made Jovian electrons a valuable tool in the study of energetic electron transport within the heliosphere. We present observations of Jovian electrons measured by the EPI-Hi instrument in the Integrated Science Investigation of the Sun (IS ʘ IS) instrument suite on Parker Solar Probe at distances within 0.5 au of the Sun. These are the closest measurements of Jovian electrons to the Sun, providing a new opportunity to study the propagation and transport of energetic electrons to the inner heliosphere. We also find periods of nominal connection between the spacecraft and Jupiter in which expected Jovian electron enhancements are absent. Several explanations for these absent events are explored, including stream interaction regions (SIRs) between Jupiter and Parker Solar Probe and the spacecraft lying on the opposite side of the heliospheric current sheet from Jupiter, both of which could impede the flow of the electrons. These observations provide an opportunity to gain a greater insight into electron transport through a previously unexplored region of the inner heliosphere.

J. G. Mitchell↗

Microscopy imaging device with advanced imaging properties

Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm 2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 μm resolution for an image of the field of view.

Ghosh, Kunal↗

Microscopy imaging device with advanced imaging properties

Systems, methods and devices are implemented for microscope imaging solutions. One embodiment of the present disclosure is directed toward an epifluorescence microscope. The microscope includes an image capture circuit including an array of optical sensor. An optical arrangement is configured to direct excitation light of less than about 1 mW to a target object in a field of view of that is at least 0.5 mm2 and to direct epi-fluorescence emission caused by the excitation light to the array of optical sensors. The optical arrangement and array of optical sensors are each sufficiently close to the target object to provide at least 2.5 μm resolution for an image of the field of view.

Ghosh, Kunal↗

Understanding, inhibiting, and engineering membrane transporters with high-throughput mutational screens

Promiscuous membrane transporters play vital roles across domains of life, mediating the uptake and efflux of structurally and chemically diverse substrates. Although many transporter structures have been solved, the fundamental rules of polyspecific transport remain inscrutable. In recent years, high-throughput genetic screens have solidified as powerful tools for comprehensive, unbiased measurements of variant function and hypothesis generation, but have had infrequent application and limited impact in the transporter field. In this primer, we describe the principles of high-throughput screening methods available for studying polyspecific transporters and comment on the necessity and potential of high-throughput methods for deciphering these transporters in particular. We present several screening approaches which could provide a fundamental understanding of the molecular basis of function and promiscuity in transporters. Here, we further posit how this knowledge can be leveraged to design inhibitors that combat multidrug resistance and engineer transporters as needed tools for synthetic biology and biotechnology applications.

EPIs↗

Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations

We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach in a thin film of perovskite SrSnO 3 with reconfigurable periodic nanostructures consisting of regularly spaced regions of sharply contrasted dielectric properties. The films can be designed to have different periodicities and relative phase fractions via chemical doping or strain engineering. The dielectric contrast within a single film can be tuned using temperature and laser wavelength, effectively creating a variable photonic crystal. Our results show the realistic possibility of designing large-area self-assembled periodic structures using martensitic phase transformations with the potential of implementing "built-to-order" nanostructures for tailored optoelectronic functionalities.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The Influence of Spatial Variations of Diffusion Length on Charge Collected by Diffusion from Ion Tracks

Charge collected by diffusion from ion tracks in a semiconductor substrate may be influenced by the substrate diffusion length, which is related to recombination losses. A theoretical analysis shows that, excluding some extreme cases, charge collection is insensitive to spatial variations in the diffusion length funciton, so it is possible to define an effective diffusion length having the property that collected charge can be approximated by assuming a uniform diffusion length equal to this effective value.

SRAMs epi SRAMs ion tracks charge collection↗