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Results for “ferroelectric”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

Hunt, Mitchell↗
NASA NTRS2012

I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

Laws, Crystal↗
NASA NTRS2020

Creating High Temperature Ferroelectrics by Using Ternary Components with Limited Solubility

High temperature ferroelectrics are needed for actuator applications ranging from drilling on the surface of Venus to fuel modulation in jet engines. Machine learning in previous work has dramatically reduced search space and produced new candidates for experimentation. It is possible to create high temperature piezoelectrics by changing the end member of ternary systems. The starting point was near the morphotropic phas boundary between BiScO3(BS) and PbTiO3 (PT) (38%/62%). The third end member was suggested by machine learning to create a high Tc with limited solubility; BiCo0.88Fe0.12O3 (BCF).

Hirt, Benjamin↗
NASA NTRS1979

One-third selection for matrix-addressing ferroelectrics

Automatic-gain-control (AGC) circuit regulates gain of intermediate frequency and radio-frequency signals over wide dynamic range with high linearity and very low phase shift. Potential application include radio and television receivers, signal distribution systems, and test and measurement instruments.

Tannas, L. E., Jr.↗
NASA NTRS1982

Photovoltaic effect in ferroelectric ceramics

The ceramic structure was simulated in a form that is more tractable to correlation between experiment and theory. Single crystals (of barium titanate) were fabricated in a simple corrugated structure in which the pedestals of the corrugation simulated the grain while the intervening cuts could be filled with materials simulating the grain boundaries. The observed photovoltages were extremely small (100 mv).

Epstein, D. J.↗
NASA NTRS1982

Piezoelectric and pyroelectric coefficients for ferroelectric crystals with polarizable molecules

Expressions for piezoelectric and pyroelectric coefficients for a crystal of polarizable point dipoles are derived. The effect of crystal structure on the local electric field acting to polarize the molecules is included via the Lorentz-factor formalism. The derived expressions for the piezo- and pyroelectric coefficients are found to contain terms dependent on derivatives of the Lorentz factors. These terms reflect the changing of molecular dipole moments in response to the changing local electric field in the strained crystal. Inclusion of this effect results in predictions of coefficients substantially different from those obtained using the Lorentz field approximation.

Purvis, C. K.↗