Effects of g-jitter and Marangoni convection on float zones
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Ramachandran, N.↗
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Fabrication of large-area CCD detectors on high-purity, float-zone silicon
In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.
Gregory, J. A.↗
Float Zone Growth of Alloy Semiconductor Crystals: Influence of Solutocapillary Convection
Growth techniques with large free melt surfaces are affected by convective flows induced by gradients of the surface tension. In the case of dilute semiconductor alloys (in our case: germanium-silicon), the impact of solutocapillary convection (due to the concentration dependence of the surface tension) has to be taken into account in addition to the "normal" thermocapillary convection (due to the temperature dependence of the surface tension). Theoretical considerations, based on experimental temperature profiles, growth geometry, segregation coefficient, and measured values for the temperature and concentration coefficients of the surface tension, lead to the conclusion that for the germanium rich side of the Ge(1-x)Si(x) system, the contribution of solutocapillary convection is, at least in front of the solid-liquid interface, the dominant factor. It results in an additional flow roll with a flow direction opposite to the thermocapillary flow, similar to the ones reported for metal alloys or high Prandtl-number fluids.
Dold, P.↗
Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals
Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.
Dold, P.↗
Solutocapillary Convection in the Float-Zone Process with a Strong Magnetic Field
This paper treats the axisymmetric flow and mass transport in a cylindrical liquid bridge between the melting end of a feed rod and the solidifying end of an alloyed semiconductor crystal. There is a strong, uniform, steady, axial magnetic field. The surface tension depends on the temperature and the concentration of the species, while variations of the concentration occur because one species is rejected into the liquid during solidification. The thermocapillary and solutocapillary convections tend to cancel- over part of the liquid bridge. For certain parameter ranges, there are two different stable steady solutions: one where the concentration gradient along the free surface leads to dominance by the solutocapillary convection and one where the mass transport due to the thermocapillary convection makes the concentration gradient along the free surface small, so that the thermocapillary convection is dominant.
Walker, J. S.↗
Edge-defined contact heater apparatus and method for floating zone crystal growth
An apparatus for growing a monocrystalline body (30) from a polycrystalline feed rod (22) includes a heater (20) that is positioned to heat a short section of the polycrystalline rod (22) to create a molten zone (34). The heater (20) is formed to include a shaper (40) that contacts the polycrystalline rod (22) in the molten zone (34) and has a hole (46) to allow flow in the molten zone (34) between the polycrystalline rod (22) side and the monocrystalline body (30) side of the shaper. The shaper (40) has an edge (42) that defines the boundary of the cross-section of the monocrystalline body (30) that is formed as the molten material solidifies.
Kou, Sindo↗
Sample environment effects on synchrotron-measured temperature profiles in an approximant of optical floating zone crystal growth
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99 GENERAL AND MISCELLANEOUS↗
CMOS Integrated With Float Zone Pixel Sensor
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3D, silicon sensors, low mass, low power, accelera↗
Phase 1 Final Report for CMOS Integrated With Float Zone Pixel Sensor
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2.1.2.1 X-Ray Spectroscopy↗
Microgravity silicon zoning investigation
The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.
Kern, E. L.↗
Microgravity accelerometer characterization on Columbia STS-32 mission
The Honeywell In-Space Accelerometer (HISA) is a three-axis microgravity accelerometer instrument package recently developed by Honeywell Systems and Research Center (SRC) to monitor oscillatory and transient accelerations onboard spacecraft and spaceborne structures. The HISA was designed to be co-located with materials and life sciences experiments to record real-time accelerometer event data, sampling time, and temperature. The HISA was originally developed to monitor the microgravity disturbances associated with a polymer morphology experiment developed by 3M Company in Minneapolis, Minnesota. The HISA was first flight tested with the 3M experiment on the Space Shuttle Atlantis STS-34 in October 1989. The HISA was successfully flown on a second shuttle mission (Columbia STS-32 in January 1990) in support of the NASA JSC-sponsored Microgravity Disturbances Experiment (MDE), which focused on the effects of microgravity disturbances on the growth of high-quality Indium crystals. The primary objective of the STS-32 MDE experiment was to investigate the effects of crew-induced gravity disturbances on the microstructure (crystal defects and uniformity of impurity distribution) of float-zone-grown crystals. The float-zone technique involves establishing a suspended molten zone between two cylindrical samples a pure, single-crystal sample and an impure, polycrystalline sample. Microgravity disturbances due to crew treadmill activity and orbiter maneuvering system thruster firings were sensed and recorded by the HISA to understand their effects on the stability of the float zone. The principle of operation of the HISA, the flight configuration of the HISA supporting the MDE experiment, and the characterization of STS-32 treadmill disturbance data are summarized.
Schoess, Jeff↗
Influence of oxygen on defect production in electron-irradiated, boron-doped silicon
Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.
Deangelis, H. M.↗
Solidification of II-VI Compounds in a Rotating Magnetic Field
This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow of liquid, however, is complex due to the competing flow induced by the rotating magnetic field and the buoyancy driven convection. When the acceleration forces are reduced to one thousandth of gravity, the flow pattern is much simplified and well controlled material transport through the solvent zone can be readily achieved. Triple axis diffractometry and x-ray synchrotron topography have demonstrated that there is no significant improvement in crystal quality for HgCdTe grown on earth from a tellurium solution when a rotating magnetic field is applied. However, modeling shows that the flow in microgravity with a rotating magnetic field would produce a superior product.
Gillies, D. C.↗
Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field
The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.
Gillies, D. C↗
Microgravity Silicon Zoning Investigation
This research program is directed toward the understanding of the float zone crystal growth process, the melt interactions which lead to crystal inhomogeneities, and the influence of microgravity on reducing these inhomogeneities. Silicon was selected as the model crystal because its inhomogeneities lead to known variations in device performance, and because the mechanisms involved in its growth are understood better than for other high temperature crystals. The objective of the program is to understand the growth mechanisms in float zone growth and thereby determine the feasibility and advantages of float zone growth of silicon under microgravity conditions. This will be done by characterizing the growth at g = 1, projecting the changes in melt flows due to microgravity, observing these in space growth and determining the effects on defective inhomogeneities. A Thin Rod Zoner was constructed as a laboratory prototype for flight growth of 5 mm diameter silicon crystals, which can be done within the power and cooling capabilities of shuttle flights. A new method of zoning silicon, using resistance heating, has resulted in melting 5 mm diameter ingots.
E L Kern↗
Electric power needs in space
The power requirements for specific float zone experiments in space are presented. Power figures for the Space Shuttle and projected available power for advanced vehicles are given. The following power related trends are derived: (1) float zone processing of up to 5 cm diameter silicon and 16.0 cm diameter cadmium telluride can be conducted on a Shuttle pallet mission; (2) float zone processing of up to 8.5 cm diameter silicon for 70% total heating efficiency can be conducted on the initial MEC/space platform; (3) projected available host vehicle power for float zone sample heating; (4) induction heating is found to be the most promising heating method; (5) process control and ease of equipment integration into the host vehicle influence heating method selection.
Waltz, D. M.↗
Reduction of Defects in Germanium-Silicon
Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow GeSi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in GeSi crystals (Si less than or equal to 10 at%) up to 20mm in diameter. Specific objectives include: measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; determination of the mechanism of detached growth including the role of convection; quantitative determination of the differences in defects and impurities for crystals grown using normal Bridgman, detached Bridgman, and floating zone (FZ) methods; investigation of the influence of a defined flow imposed by a rotating magnetic field on the characteristics of detached growth; control of time-dependent Marangoni convection in the case of FZ growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and growth of benchmark quality GeSi-single crystals.
Szofran, Frank R.↗
Relationship of dislocation density of silicon to solar cell current loss at low temperature.
Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.
Mandelkorn, J.↗