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Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research focused on understanding the ferroelectric property origins and means to increase stability of the ferroelectric phase. Prior studies have revealed that biaxial tensile stress via an electrode “capping effect” is a suspected ferroelectric phase stabilization mechanism. This effect is commonly reported to stem from a coefficient of thermal expansion (CTE) incongruency between the hafnia and top electrode. Despite reported correlations between ferroelectric phase fraction and electrode CTE, the thick silicon substrate dominates the mechanics and CTE-related stresses, negating any dominant contribution from an electrode CTE mismatch toward the capping effect. In this work, these discrepancies are reconciled, and the origin of these differences deriving from electrode elastic modulus, not CTE, is demonstrated. Pt/M/TaN/Hf 0.5 Zr 0.5 O 2 /TaN/Si devices, where M is platinum, TaN, iridium, tungsten, and ruthenium, were fabricated. Sin 2 (ψ)-based X-ray diffraction measurements of biaxial stress in the HZO layer reveal a strong correlation between biaxial stress, remanent polarization, and electrode elastic modulus. Conversely, a low correlation exists between the electrode CTE, HZO biaxial stress, and remanent polarization. A higher elastic modulus enhances the resistance to electrode elastic deformation, which intensifies the capping effect during crystallization, and culminates in the tandem restriction of out-of-plane hafnia volume expansion and preferential orientation of the polar c-axis normal to the plane. These behaviors concomitantly increase the ferroelectric phase stability and polarization magnitude. This work provides electrode material selection guidelines toward the development of high-performing ferroelectric hafnia into microelectronic devices, such as nonvolatile memories.
Stability Evaluation of Candidate Precursors for Chemical Vapor Deposition of Hafnium Diboride (HfB 2 )
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Zirconium and hafnium polyhedral oligosilsesquioxane complexes – green homogeneous catalysts in the formation of bio-derived ethers via a MPV/etherification reaction cascade
The polyhedral oligosilsesquioxane complexes, {[(isobutyl) 7 Si 7 O 12 ]ZrOPr i ·(HOPr i )}2 (I), {[(cyclohexyl) 7 Si 7 O 12 ]ZrOPr i ·(HOPr i )} 2 (II), {[(isobutyl) 7 Si 7 O 12 ]HfOPr i ·(HOPr i )} 2 (III) and {[(cyclohexyl) 7 Si 7 O 12 ]HfOPr i ·(HOPr i )} 2 (IV), were synthesized in good yields from the reactions of M(OPr i ) 4 (M = Zr, Hf) with R-POSS(OH) 3 (R = isobutyl, cyclohexyl), resp. I–IV were characterized by 1 H, 13 C and 29 Si NMR spectroscopy and their dimeric solid-state structures were confirmed by X-ray analysis. I–IV catalyze the reductive etherification of 2-hydroxy- and 4-hydroxy and 2-methoxy and 4-methoxybenzaldehyde and vanillin to their respective isopropyl ethers in isopropanol as a “green” solvent and reagent. I–IV are durable and robust homogeneous catalysts operating at temperatures of 100–160 °C for days without significant loss of catalytic activity. Likewise, I–IV selectively catalyze the conversion of 5-hydroxymethylfurfural (HMF) into 2,5-bis(isopropoxymethyl)furane (BPMF), a potentially high-performance fuel additive. Similar results were achieved by using a combination of M(OPr i ) 4 and ligand R-POSS(OH) 3 as a catalyst system demonstrating the potential of this “in situ” approach for applications in biomass transformations. A tentative reaction mechanism for the reductive etherification of aldehydes catalysed by I–IV is proposed.
Electronic transport and polarization-dependent photoresponse in few-layered hafnium trisulfide (HfS 3 ) nanoribbons
Few-layered HfS 3 nanoribbons exhibit n-type conductivity and a large photoresponse to visible light. The photocurrent strongly depends on the polarization direction of the excitation laser due to the highly anisotropic quasi-1D crystal structure of HfS 3 .
Atomically precise surface chemistry of zirconium and hafnium metal oxo clusters beyond carboxylate ligands
Computational and experimental investigation of metal oxo cluster surface chemistryvialigand exchange reactions with phosphinic and phosphonic acid ligands.
Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis
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Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films
Despite its scalability and CMOS process compatibility, the limited endurance and sub-optimal stress response of ferroelectric Zr-substituted hafnia [(Hf,Zr)O 2 ] have been one of the key impediments toward its integration into practical device and technology applications. Here, using electrical measurements complemented by photoluminescence spectroscopy, we investigate the underlying mechanisms behind this behavior in 10 nm thick W/Hf 0.5 Zr 0.5 O 2 /W capacitors. Analyzing the evolution of leakage current with stress cycles and the spectroscopic response of the stress-induced leakage current, we attribute the behavior to defect levels, which lie at 0.6 eV from the conduction band edge of the ferroelectric. Photoluminescence spectroscopy, in turn, further corroborates the defect level's position within the bandgap while enabling its attribution to the presence of oxygen vacancies. Furthermore, this work helps to identify oxygen vacancies as the key factor responsible for the degraded endurance and stress response in (Hf,Zr)O 2 and subsequently motivates the exploration of methods to reduce the oxygen vacancy concentrations without destabilizing the ferroelectric orthorhombic phase.
Interface instabilities in hafnium hydride entrained iron metal matrix composites
The chemical interactions in Fe–HfH 2 metal matrix composites (MMCs) are studied across multiple length scales to elucidate the decomposition of the parent phases and corresponding reaction zone physics during direct current sintering. Fe–HfH 2 composites were synthesized with increasing as-mixed hydride contents of Fe–25% HfH 2 , Fe–40% HfH 2 , Fe–55% HfH 2 , and Fe–70% HfH 2 (all in vol. %) to demonstrate the ability to achieve sintered MMCs with target hydride contents. Samples were probed across multiple length scales through a multi-modal workflow employing x-ray diffraction, scanning electron microscopy and segmentation analysis, and synchrotron techniques including hard x-ray fluorescence mapping and nanoprobe x-ray absorption near-edge structure measurements. Under the selected sintering temperature and pressure conditions, hydrogen evolution is seen to evolve through parallel paths: thermal decomposition from during the transformation of HfH 2 to HfH x<2 and through subsequent reaction with the Fe matrix leading to intermetallic phase formation. Specifically, HfFe and HfFe 2 intermetallic formation accelerates the release of hydrogen with a subsequent HfO 2 phase forming at grain boundaries. For this MMC, the consumption or loss of hydrogen can be considerable in compacts with initial hydride loading of 25%–40% HfH 2 approaching 83% hydrogen loss for the lower volume fraction composites. Increasing the volume fraction of HfH 2 to 70% enhanced the retained hydrogen content to 53% and attributed to the reduced interfacial area intrinsic to the increased HfH 2 loading in this MMC.
Growth of High-Performance 4-5μm Thick Film REBCO Tapes Doped With Hafnium Using Advanced MOCVD
Advanced metal organic chemical vapor deposition technique (A-MOCVD) was used to grow 4-5 µm thick REBa 2 Cu 3 O 7–δ (REBCO, RE = rare earth) films, doped with 5% and 15% Hf. Thick REBCO films doped with 5% Hf exhibit self-field critical current density (J c ) over 1.8 MA/cm 2 at 77 K and 3 MA/cm 2 at 65 K, 1.5 T. Increasing the Hf content to 15% resulted in J c above 9 MA/cm 2 at 20 K, 9 T. The effect of (Ba+Hf)/Cu content in Hf-added (5 and 15 mol.%) REBCO films on the critical current density at 77 K, 0 T, c-axis lattice parameter and out-of- plane texture has been studied. In addition to growth of thick film REBCO tapes with superior performance, the A-MOCVD reactor has been used to quadruple the precursor-to-film conversion efficiency above 45%. Furthermore, this achievement has a first order impact in lowering the cost of REBCO tapes made by A-MOCVD.
Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films
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Effects of Gamma Radiation on the Electrical and Structural Properties of Ferroelectric Hafnium Oxide-Based Capacitors
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Integral Experiment Validation of Hafnium with TEX-HEU and TEX-Hf [Slides]
Lead by Lawrence Livermore National Laboratory under the U.S. Department of Energy's Nuclear Criticality Safety Program. The goal of TEX is to provide integral benchmark experiments than span the entire neutron energy spectrum and incorporate high-priority materials. TEX includes two test bed configurations providing a baseline for comparison to better understand the contribution of additional materials
Effects of gamma radiation on the properties of ferroelectric hafnium zirconium oxide capacitors
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Influence of Oxygen Flow and Sub-Stoichiometry on the Optical and Damage Resistance Properties of Hafnium Oxide Thin Films
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TEX-HEU & TEX-Hf: Critical Assemblies with Highly Enriched Uranium, Polyethylene, and Hafnium
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Integral Experiment Validation of Hafnium with TEX-HEU and TEX-Hf
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