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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Intersubband Relaxation in CdSe Colloidal Quantum Wells

The dynamics of intersubband relaxation are critical to quantum well technologies such as quantum cascade lasers and quantum well infrared photodetectors. In this work, intersubband relaxation in CdSe colloidal quantum wells, or nanoplatelets, is studied via pump-push-probe transient spectroscopy. An initial interband pump pulse is followed by a secondary infrared push excitation, resonant with intersubband absorption, which promotes electrons from the first conduction band of the quantum well to the second conduction band. A probe pulse monitors subsequent electron cooling to the band edge of the quantum well. Using this technique, intersubband relaxation is studied as a function of critical variables such as colloidal quantum well size and thickness, surface ligand chemistry, temperature, and excitation pulse intensity. Larger quantum well sizes, judicious selection of surface ligand chemistry (e.g., thiolates), low temperatures, and elevated push pulse fluences slow intersubband relaxation. However, compared to resonant intraband relaxation in colloidal quantum dots (up to hundreds of picoseconds), intersubband relaxation in colloidal quantum wells is rapid (<1 ps) under all examined conditions. These experiments indicate that rapid relaxation is driven by both LO phonon and surface scattering. The short time scale of relaxation observed in these materials may hinder intersubband technologies such as mid-infrared detectors, although such rapid relaxation may prove valuable in optical switching.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Plasmon enabled Claisen rearrangement with sunlight

The use of a thermodynamically closed reactor prevented the interference of hot-charge carriers in the plasmonic-heat driven Claisen rearrangement, which is conventionally performed with electrical-heating at 250 °C.

Chemistry↗
DOE OSTI2022

Elucidating the Roles of Local and Nonlocal Rate Enhancement Mechanisms in Plasmonic Catalysis

Plasmonic metal nanoparticles (e.g., Ag, Au, and Cu) constitute a class of materials that interact with light via the excitation of localized surface plasmon resonance (LSPR). Numerous studies have reported substantial enhancements in the rates of chemical reactions on illuminated plasmonic nanoparticle catalysts compared to corresponding systems in the absence of illumination. There are two mechanisms that have been proposed to explain the LSPR-induced chemical reactivity. One mechanism assumes a local plasmon-induced hot charge-carrier-mediated activation of the reactants, while the other assumes an LSPR-induced equilibrium heating of the catalyst, which leads to energy transfer to and chemical reaction of the adsorbed reactants. Here, in this contribution, we developed a setup amenable to accurate in situ catalyst temperature and kinetic reaction rate measurements. We employed this setup to study the LSPR-induced rate enhancement in a case study of the CO oxidation reaction on plasmonic, monometallic Ag nanoparticle catalysts supported on α-Al 2 O 3 . We explored various Ag loadings and clustering levels. Our data show that the equilibrium heating of the catalyst cannot fully explain the illumination-induced plasmonic rate enhancements. This is the case even for high loading and clustering of Ag nanoparticles, where the equilibrium heating significantly increases. Based on the analysis, we propose that local effects, related to the plasmon-induced activation of adsorbates (reactants) via electronic excitation of the reactant or photothermal heating of the reactants that is highly localized to the individual nanoparticles, play a critical role in driving LSPR-induced chemical reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Optimization of District Heating Network Parameters in Steady-State Operation

Here we examine the modeling, simulation, and optimization of district heating systems, which are widely used for thermal transport using steam or hot water as a carrier. We propose a generalizable framework to specify network models and scenario parameters, and develop an optimization method for evaluating system states including pressures, fluid flowrates, and temperatures throughout the network. The network modeling includes pipes, thermal plants, pumps, and passive or controllable loads as system components. We propose basic models for thermodynamic fluid transport and enforce the balance of physical quantities in steady-state flow over co-located outgoing and return networks. We formulate an optimization problem with steam and hot water as the outgoing and return carriers, as in legacy twentieth century systems. The physical laws and engineering limitations are specified for each component type, and the thermal network flow optimization problem is formulated and solved for a realistic test network under several scenarios.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application

We report multi-metallic alloy NPs composed of various elemental compositions can surmount the interband threshold limit of mono-metallic NPs and thus can offer a promising route to boost up the performance limit of conventional ultraviolet photodetectors (PDs). In this work, a hybrid UV-PD configuration has been demonstrated by combining the multi-metallic plasmonic alloy NPs of AgCu, AuCu, and AgAuCu on a GaN photoactive layer in order to exploit the improved photo carrier injection by the strong hot electrons and LSPR. Among various devices, the tri-metallic AgAuCu NP PD demonstrates the highest performance with a remarkably high photocurrent of 1.47 x 10 -2 A at 1 V with fast rise (T r ) and fall (T f ) times of 170 and 700 ms with a very stable current. This leads to the superior figure-of-merit parameters of the PD with a photoresponsivity of 4.3 x 10 6 mA W-1, detectivity of 3.52 x 10 12 Jones and EQE of 1.39 x 10 6 %, which is ~16 times higher than the bare GaN PD. This ranks the AgAuCu PD as one of the best GaN based UV photodetectors. The photocurrent enhancement and excellent figure-of-merit can be attributed to the significantly increased photo carrier injection by the efficient hot electron generation via the LSPR and improved interfacial barrier characteristics by the tri-metallic elemental synergy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A beam profile and position measurement system for the IPF target

Currently one determines the size and position of the proton beam at the IPF target using plastic films. These films are installed in a target carrier, lowered into position, exposed to the beam, raised back up to the hot cell, removed from the target carrier, and assessed via a video feed. About an hour is required for each cycle of measurement. Because of this high cost in terms of time the users usually settle for a beam that is good enough to meet their needs, but not as good as they would like. I propose here a diagnostic device that would enable a measurement of under two seconds. This would enable delivery of a better-quality beam in less time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Plasmonic Hot Hole Transfer in Gold Nanoparticle-Decorated Transition Metal Dichalcogenide Nanosheets

This work studies photogenerated carrier dynamics in gold nanoparticle (AuNP)-decorated mono- to few-layer transition metal dichalcogenide (TMD) nanosheets using transient absorption spectroscopy (TA). TA unveiled the presence of a long-lived photoinduced absorption (PIA) feature in both MoSe 2 and WSe 2 decorated with covalently bound AuNPs. This long-lived PIA feature emerges only from direct Au interband excitation in AuNP-decorated MoSe 2 and WSe 2 ; it does not manifest from intraband excitation nor in AuNP-decorated MoS 2 or WS 2 . Based on X-ray/ultraviolet photoelectron spectroscopy and previous theoretical studies, it is proposed that this PIA signature arises from hot hole transfer from the AuNP to the adjacent TMD, producing a charge-separated state. This suggests charge separation at the metal-semiconductor interface may be used to extend the lifetime of interband excitation generated hot holes. We conclude this development could represent an important advance in harnessing plasmonic dissipation pathways to generate long-lived carriers suited for solar-driven light harvesting and catalysis.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hot Electron Driven Photocatalysis on Plasmon-Resonant Grating Nanostructures

Here, we demonstrate the hot electron injection of photoexcited carriers in an Ag-based plasmon resonant grating structure. By varying the incident angle of irradiation, sharp dips are observed in the reflectance with p-polarized light (electric field perpendicular to grating lines) when there is wavevector matching between the incident light and the plasmon resonant modes of the grating and no angle dependence is observed with s-polarized light. This configuration enables us to compare photoelectrochemical current produced by plasmon resonant excitation with that of bulk metal interband absorption simply by rotating the polarization of the incident light while keeping all other parameters of the measurement fixed. With 633 nm light, we observed a 12-fold enhancement in the photocurrent (i.e., reaction rate) between resonant and nonresonant polarizations at incident angles of ±7.6° from normal. At 785 nm irradiation, we observed similar resonant profiles to those obtained with 633 nm wavelength light but with a 44-fold enhancement factor. Using 532 nm light, we observed two resonant peaks (with approximately 10× enhancement) in the photocurrent at 19.4° and 28.0° incident angles, each corresponding to higher order modes in the grating with more nodes per period. The lower enhancement factors observed at shorter wavelengths are attributed to interband transitions, which provide a damping mechanism for the plasmon resonance. Finite difference time domain (FDTD) simulations of these grating structures confirm the resonant profiles observed in the angle-dependent spectra of these gratings and provide a detailed picture of the electric field profiles on and off resonance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Measuring Photoexcited Electron and Hole Dynamics in ZnTe and Modeling Excited State Core-Valence Effects in Transient Extreme Ultraviolet Reflection Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy is becoming a valuable tool for characterizing solar energy materials because it can separate photoexcited electron and hole dynamics with element specificity. We use surface-sensitive femtosecond XUV reflection spectroscopy to separately measure photoexcited electron, hole, and band gap dynamics of ZnTe, a promising photocathode for CO 2 reduction. We develop an ab initio theoretical framework based on density functional theory and the Bethe-Salpeter equation to robustly assign the complex transient XUV spectra to the material's electronic states. Applying this framework, we identify the relaxation pathways and quantify their time scales in photoexcited ZnTe, including subpicosecond hot electron and hole thermalization, surface carrier diffusion, ultrafast band gap renormalization, and evidence of acoustic phonon oscillations.

14 SOLAR ENERGY↗
DOE OSTI2024

Intrinsically Slow Cooling of Hot Electrons in CdSe Nanocrystals Compared to CdS

The utilization of excited charge carriers in semiconductor nanocrystals (NCs) for optoelectronic technologies has been a long-standing goal in the field of nanoscience. Experimental efforts to extend the lifetime of excited carriers have therefore been a principal focus. To understand the limits of these lifetimes, in this work, we theoretically study the time scales of pure electron relaxation in negatively charged NCs composed of two prototypical materials: CdSe and CdS. We find that hot electrons in CdSe have lifetimes that are 5 to 6 orders of magnitude longer than in CdS when the relaxation is governed only by the intrinsic properties of the materials. Although these two materials are known to have somewhat different electronic structure, we elucidate how this enormous difference in lifetimes arises from relatively small quantitative differences in electronic energy gaps and phonon frequencies, as well as the crucial role of Fröhlich-type electron–phonon couplings.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Electrospun Nanofiber Electrodes for High and Low Humidity PEMFC Operation

MEAs with nanofiber mat electrodes containing Pt/C catalyst and Nafion binder were fabricated and evaluated. The electrodes were prepared by electrospinning a solution of catalyst powder, salt-form Nafion (with Na + , Li + , or Cs + as the sulfonic acid counterion), and a carrier polymer of either polyethylene oxide or poly(acrylic acid). The carrier polymer was extracted prior to MEA testing by a hot water soaking step. The resulting fibers were 15%–17% porous, with a core–shell-like morphology (a coating of primarily Nafion on the fiber surface). MEAs with anode/cathode catalyst loadings of 0.1 mg Pt cm −2 each and a Nafion 211 membrane produced high power at both high and low relative humidity (RH) conditions in H 2 /air fuel cell tests, e.g., a maximum power density of 919 mW cm −2 at 100% RH and 832 mW cm −2 at 40% RH for a test at 80 °C and 200 kPa abs . The presence of nm-size pores within the fibers trapped water via capillary condensation during low RH feed gas testing, thus maintaining a high proton conductivity of the Nafion binder in the anode and cathode while minimizing/eliminating ionic isolation of catalyst particles in low water content, poorly conductive binder.

25 ENERGY STORAGE↗
DOE OSTI2022

P-type conductivity in Sn-doped Sb 2 Se 3

Abstract Antimony selenide (Sb 2 Se 3 ) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices (Hobson et al 2020 Chem. Mater. 32 2621–30). Herein, Sn-doped Sb 2 Se 3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 10 14 cm −3 ) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, x-ray and hard x-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb 2 Se 3 , showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb 2 Se 3 and highlights avenues for further optimisation of doped Sb 2 Se 3 for solar energy devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

A Photochemical Phosphorus-Hydrogen-Oxygen Network for Hydrogen-dominated Exoplanet Atmospheres

Due to the detection of phosphine (PH 3 ) in the solar system gas giants Jupiter and Saturn, PH 3 has long been suggested to be detectable in exosolar substellar atmospheres too. However, to date, direct detection of phosphine has proven to be elusive in exoplanet atmosphere surveys. We construct an updated phosphorus-hydrogen-oxygen (PHO) photochemical network suitable for the simulation of gas giant hydrogen-dominated atmospheres. Using this network, we examine PHO photochemistry in hot Jupiter and warm Neptune exoplanet atmospheres at solar and enriched metallicities. Our results show for HD 189733b-like hot Jupiters that HOPO, PO, and P 2 are typically the dominant P carriers at pressures important for transit and emission spectra, rather than PH 3 . For GJ1214b-like warm Neptune atmospheres our results suggest that at solar metallicity PH 3 is dominant in the absence of photochemistry, but is generally not in high abundance for all other chemical environments. At 10 and 100 times solar, small oxygenated phosphorus molecules such as HOPO and PO dominate for both thermochemical and photochemical simulations. The network is able to reproduce well the observed PH 3 abundances on Jupiter and Saturn. Despite progress in improving the accuracy of the PHO network, large portions of the reaction rate data remain with approximate, uncertain, or missing values, which could change the conclusions of the current study significantly. Improving understanding of the kinetics of phosphorus-bearing chemical reactions will be a key undertaking for astronomers aiming to detect phosphine and other phosphorus species in both rocky and gaseous exoplanetary atmospheres in the near future.

atmospheric composition↗
DOE OSTI2024

Non-thermal emission in gap-mode plasmon photoluminescence

Abstract Photoluminescence from spatially inhomogeneous plasmonic nanostructures exhibits fascinating wavelength-dependent nonlinear behaviors due to the intraband recombination of hot electrons excited into the conduction band of the metal. The properties of the excited carrier distribution and the role of localized plasmonic modes are subjects of debate. In this work, we use plasmonic gap-mode resonators with precise nanometer-scale confinement to show that the nonlinear photoluminescence behavior can become dominated by non-thermal contributions produced by the excited carrier population that strongly deviates from the Fermi-Dirac distribution due to the confinement-induced large-momentum free carrier absorption beyond the dipole approximation. These findings open new pathways for controllable light conversion using nonequilibrium electron states at the nanoscale.

Science & Technology - Other Topics↗
DOE OSTI2025

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Most properties of semiconductor devices are dominated by shallow impurities. However, deep defects often play an important role, for instance, in recombination processes or high field transport. While a variety of techniques are available to assess the density and energy levels of impurities, other properties, such as the recombination mechanisms of the defects, escape observation. We report on the direct measurement of hot electrons generated by trap-assisted Auger-Meitner recombination (TAAR) in GaN p-i-n diodes. By performing electron emission spectroscopy (EES) on diodes with surfaces activated to negative electron affinity by cesium, we observe the expected overflow electrons of p-i-n diodes under low current injection. However, when operating the devices at higher current densities, as low as ∼25 A/c⁢m 2 , we measure the emission of high-energy electrons. At variance with the observed hot electrons in light-emitting diodes (LEDs) using EES, the hot electrons generated in p-i-n diodes at our tested currents cannot be from eeh Auger-Meitner recombination due to the diodes' significantly lower carrier densities compared to those in LEDs. During our measurements, we observe the emission of accumulated electrons with energies ∼0.42 eV, ∼0.99 eV, ∼1.43 eV, and ∼2.32 eV above the conduction-band minimum (CBM) at various bias conditions, suggesting the existence of conduction-band features in GaN at these energies where electrons can be long-lived, such as satellite-valley minima and inflection points. We also measure incompletely relaxed hot electrons approaching energies 1.97 ± 0.13 eV and 2.94 ± 0.13 eV above the CBM, as the diodes are biased to high currents, suggesting at least some of the TAAR partaking defects have an energy level ≳1.97 eV and ≳2.94 eV away from either the conduction or valence band edges. Additionally, at our highest operating currents, we measure hot electrons with energies 3.28 ± 0.13 eV above the CBM, providing direct evidence of TAAR processes involving shallow impurities. This unexpected observation of TAAR in GaN p-i-n diodes spotlights the importance of further studies of defects in GaN and the necessity to incorporate the multi-phonon emission, radiative, and TAAR capture steps of defect-assisted recombination cycles into device modeling. Furthermore, this experiment demonstrates the applicability of the simplest semiconductor structures, p-i-n diodes, as a test bed to study the rich recombination physics of semiconductor materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Direct Spectroscopic Observation of the Hole Polaron in Lead Halide Perovskites

Intrinsic photophysical origin of lead halide perovskites (LHPs) succeeding in optolectronic applications still remains hotly debated. In this study, by using the ultrafast X-ray transient absorption spectroscopy, we successfully tracked the fate of photogenerated charge carriers at room temperature within the thin films of two classic LHPs, namely MAPbBr 3 (MA: CH 3 NH 3 ) and FAPbBr 3 (FA: CH(NH 2 ) 2 ). We clearly observed in both thin films that the hole polaron is formed by localizing the photogenerated hole at Br 4p orbital and concurrently distorting the local structure surrounding Br atom after the photoexcitation. Furthermore, the bigger cation FA in the cavity of [PbBr 6 ] 4- octahedral framework induces larger hole polaron effect due to its p orbital hybridization into valence and conduction bands, correlating with the slower charge carrier recombination dynamics. Our direct experimental observation of the localized hole polaron in perovskites should advance the fundamental comprehension of charge carrier behavior within LHPs and their related devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗