Correction to “First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface”
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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Enhancing the barrier height in oxide Schottky junctions using interface dipoles
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Tachikawa, Takashi↗
Very low Schottky barrier height at carbon nanotube and silicon carbide interface
Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
Dynamic conductance dI/dV and inelastic electron tunneling spectroscopy (IETS) d{sup 2}I/dV{sup 2} have been measured at different temperatures for double barrier magnetic tunnel junctions with a thin top MgO layer. The resistance in the antiparallel state exhibits a normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin top MgO layer. Three IETS peaks are the zero-bias anomaly, interface magnons, and barrier phonons in both the parallel and antiparallel states. The zero-bias anomaly is the strongest peak in the parallel state and its intensity decreases with temperature. The magnon has the largest intensity in the antiparallel state and its intensity also decreases with temperature. The origins of the dips and peaks in the dI/dV-V curve are also discussed.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Nickel Interlayer for Improved Silver Complex Inks Metallization in GaAs Photovoltaic Devices
Large areas of III-V photovoltaic panels are essential to supplying operational energy for a growing demand of satellites of strategic importance to the United States military, covering a range of applications. High fabrication costs and low manufacturing throughput are key barriers to meeting the necessary supply, which can in turn jeopardize mission success. At the device level, metallization based on printing of complex metal inks has attracted significant research interest due to its potential to substantially reduce processing costs and increase throughput while achieving electrical performance comparable to those of conventional metallization schemes. For GaAs photovoltaic devices, however, reliable electrical contacting remains challenging due to the formation of an interfacial oxide layer at the metal-semiconductor interface. This oxide barrier severely limits current extraction from the PV absorber, resulting in unacceptably high contact resistance. In this study, we report the introduction of a reactive nickel (Ni) interfacial layer between the silver metal fingers and the GaAs substrate to suppress oxide formation while maintaining a low-resistance electrical interface, and show performance data from fully fabricated GaAs devices incorporating the Ni interlayer. These results demonstrate the potential of reactive Ni ink as an effective interfacial layer for improved electrical contacting in low-cost PV metallization schemes.
14 SOLAR ENERGY↗
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.
36 MATERIALS SCIENCE↗
Spin Effects in Low Dimensional Correlated Systems (Final Technical Report)
Our program focuses on the behavior of two-dimensional superconducting systems that have been placed in high magnetic fields and/or in contact with magnetic materials. Our specific research agenda is organized into two separate but related areas. The first is a study of disorder and correlation effects in extremely thin superconducting aluminum, beryllium, and rhenium films that have been subjected to very high magnetic fields. We are particularly interested in understanding how the coupling between the applied field and the electron spins affects the system’s ability to form superconducting state. We now have good evidence that as the electron spins in these superconductors attempt to align to the magnetic field, a new superconducting phase emerges near the critical field transition and that this phase has a significant influence on the character of the transition. Thus, the spin behavior near the transition is much more complex than expected. The second class of systems is proximity structures comprised of superconducting/ferromagnetic (SC/FM) and superconducting/heavy metal (SC/HM) bilayers. We have developed spin-resolved tunneling probes that give us a direct measure of the proximity-induced exchange field in the SC/FM structures, as well as the spin-orbit scattering rate in SC/HM structures. Recently we have demonstrated that the magnitude of the exchange field can be modulated with an external gate, thereby producing a magneto-electric response in the bilayers. We plan to optimize this magneto-electric effect by getting a better understanding of the microscopic mechanism of the interface-induce exchange field, as well as improving the gate barriers and/or the bilayer interface quality. The ultimate goal is to develop a device such as a voltage-controlled superconducting switch or a spin- polarized electron source with a voltage-tunable Zeeman splitting.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts
We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced at a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling
A synergistic approach that incorporates first-principles atomistic modeling with numerical device simulations is used to systematically evaluate the role of heterointerfaces within metal-chalcogenide-based photovoltaic technologies. Two interfaces involving either a tellurium back contact or aluminum back electrode combined with a cadmium telluride absorber layer within cadmium-telluride-based thin-film solar cells are investigated on an atomic scale to determine the mechanisms contributing to variations in device performance. Electronic structures and predicted charge transport behavior with respect to cadmium and tellurium termination of the absorber layer are studied along the polar oriented CdTe{111} facets. The computational methodology reveals a noticeable contrast between the Schottky barrier forming Al/CdTe interface versus the Type I Te/CdTe heterojunction. Greater band bending features are exhibited by the cadmium termination as opposed to the tellurium termination for each interface case. Subsequent device modeling suggests that 3.6% higher photovoltaic conversion efficiency is achievable for the cadmium termination relative to the tellurium termination of the Te/CdTe interface. Based strictly on an idealistic representation, both interface models show the importance of atomic-scale interfacial properties for cadmium telluride solar cell device performance with their bulk properties being validated in comparison to published experimental data. Here, the synergistic approach offers a suitable method to analyze solar cell interfaces through a predictive computational framework for the engineering and optimization of metal-chalcogenide-based thin-film photovoltaic technologies.
Green’s function↗
Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy
A method to modulate the Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. The interfacial chemistries that modulate barrier heights for the Pt/a-IGZO system were investigated using in-situ X-ray photoelectron spectroscopy. A significant reduction of indium, from In 3+ to In 0 , occurs during deposition of Pt on to the a-IGZO surface in ultra-high vacuum. Post-annealing and controlling the background ambient O 2 pressure allows tuning the degree of indium reduction and the corresponding Schottky barrier height between 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metalsemiconductor field-effect transistors.
Environmental Molecular Sciences Laboratory↗
Organized assemblies of colloids formed at the poles of micrometer-sized droplets of liquid crystal
We report on the formation of organized assemblies of 1 μm-in-diameter colloids (polystyrene (PS)) at the poles of water-dispersed droplets (diameters 7–20 μm) of nematic liquid crystal (LC). For 4-cyano-4'-pentylbiphenyl droplets decorated with two to five PS colloids, we found 32 distinct arrangements of the colloids to form at the boojums of bipolar droplet configurations. Significantly, all but one of these configurations (a ring comprised of five PS colloids) could be mapped onto a local (non-close packed) hexagonal lattice. To provide insight into the origin of the hexagonal lattice, we investigated planar aqueous-LC interfaces, and found that organized assemblies of PS colloids did not form at these interfaces. Experiments involving the addition of salts revealed that a repulsive interaction of electrostatic origin prevented formation of assemblies at planar interfaces, and that regions of high splay near the poles of the LC droplets generated cohesive interactions between colloids that could overcome the repulsion. Support for this interpretation was obtained from a model that included (i) a long-range attraction between adsorbed colloids and the boojum due to the increasing rate of strain (splay) of LC near the boojum (splay attraction), (ii) an attractive inter-colloid interaction that reflects the quadrupolar symmetry of the strain in the LC around the colloids, and (iii) electrostatic repulsion between colloids. The model predicts that electrostatic repulsion between colloids can lead to a ~1000k B T energy barrier at planar interfaces of LC films, and that the repulsive interaction can be overcome by splay attraction of the colloids to the boojums of the LC droplets. Overall, the results reported in this paper advance our understanding of the directed assembly of colloids at interfaces of LC droplets.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals
Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.
Mishina, H.↗
Tunnel magnetoresistance effect in magnetic tunnel junctions using Fermi-level-tuned epitaxial Fe{sub 2}Cr{sub 1−x}Co{sub x}Si Heusler alloy
This paper reports a systematic investigation on the structural and magnetic properties of Fe{sub 2}Cr{sub 1−x}Co{sub x}Si Heusler alloys with various compositions of x by co-sputtering Fe{sub 2}CrSi and Fe{sub 2}CoSi targets and their applications in magnetic tunnel junctions (MTJs). Fe{sub 2}Cr{sub 1−x}Co{sub x}Si films of high crystalline quality have been epitaxially grown on MgO substrate using Cr as a buffer layer. The L2{sub 1} phase can be obtained at x = 0.3 and 0.5, while B2 phase for the rest compositions. A tunnel magnetoresistance (TMR) ratio of 19.3% at room temperature is achieved for MTJs using Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si as the bottom electrode with 350 °C post-annealing. This suggests that the Fermi level in Fe{sub 2}Cr{sub 1−x}Co{sub x}Si has been successfully tuned close to the center of band gap of minority spin with x = 0.7 and therefore better thermal stability and higher spin polarization are achieved in Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si. The post-annealing effect for MTJs is also studied in details. The removal of the oxidized Fe{sub 2}Cr{sub 0.3}Co{sub 0.7}Si at the interface with MgO barrier is found to be the key to improve the TMR ratio. When the thickness of the inserted Mg layer increases from 0.3 to 0.4 nm, the TMR ratio is greatly enhanced from 19.3% to 28%.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Probing Electrochemical Mg-Ion Activity in MgCr 2– x V x O 4 Spinel Oxides
Mg migration in oxide spinels is impeded by strong affinity between divalent Mg and oxygen, suggesting a necessity of exploring new chemistry of solid lattices for functional Mg-ion electrode materials. Cationic mobility with a suitable activation energy in Cr spinels is Tn. evidenced by theoretical and experimental results, while redox potentials of V are appropriate to operate with currently limited candidates of '''c" nonaqueous electrolytes. By controlling the structure, composition, and complexity, a largely solid-solution MgCrVO 4 spinel was synthesized, which, unlike nanocornposites, can bring together the advantages of each transition metal in the lattice. The spinel was successfully synthesized by a simple solid-state reaction with minor inactive Cr- or V-rich components, which was confirmed via 25 Mg MAS NMR and high-resolution X-ray diffraction analyses. A thermally and anodically stable Mg(TPFA) 2 /triglyme electrolyte was utilized for high-temperature electrochemistry and lowering kinetic barriers at and across interfaces so as to observe intercalation behavior of Mg in the designed lattice. Multimodal characterization confirmed an apparent bulk demagnesiation from MgCrVO 4 with partial reversibility by probing evolution of the local and long-range structure as well as vanadium and chromium electronic states within the lattice. Furthermore, characterization experiments also provided a direct evidence for (de)intercalation reactions that occurred without any major competitive conversion reactions or insertion of protons into the lattice, except for the formation of a surface rock salt phase upon charge. These findings in Mg-ion activity expand opportunities to design Mg spinel oxide materials while highlighting the need to identify the origins of reversibility challenges due to, but not limited to, phase stability, particularly for the charged states, barriers at the interface, electrolyte stabilities, and desolvation phenomena, collectively hindering practical use as cathode materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
A Josephson junction with h -BN tunnel barrier: observation of low critical current noise
Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 /h-BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h-BN layer. Furthermore, we characterized the superconducting current and voltage (I–V) relationships and Fraunhofer pattern of the NbSe 2 /h-BN/Nb junction. Notably, we demonstrated the critical current noise (1/f noise power) in the h-BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of the thermionic emission on the recombination and electron beam induced current contrast at the interface of a metallic precipitate embedded in a semiconductor matrix
The barrier height and the recombination velocity at the interface between a metallic precipitate and a semiconductor matrix are investigated with a new self consistent procedure based both on the analysis of the recombination and emission balance rates for electrons and holes and on the determination of the size-dependent electronic structure of the embedded precipitate. In the present work, the precipitate is modeled within the spherical well potential framework. The main result is the dependence of the recombination features on the electronic structure of the metal precipitate unlike the models based only on the Shockley-Read-Hall theory. The behaviors of the surface charge density on the metallic precipitate and the barrier height versus the precipitate size are similar to our previous studies. Unlike previous works, the recombination velocity reaches a constant non-zero value for sizes smaller than a critical size which is dependent on the defect concentration at the interface. The new dependencies of the recombination parameters are illustrated by the calculation of the electron beam induced current (EBIC) contrast at the interface.
36 MATERIALS SCIENCE↗
From Surfaces to Interfaces: Ambient Pressure XPS and Beyond
In this work, the rapidly increasing field of surfaces under ambient conditions of temperature, and pressure in gas and liquid environments, reflects the importance of understanding surface properties in conditions closer to practical situations. This has been enabled by the emergence in the last two decades of a number of new techniques, both spectroscopy and microscopy, that can deliver atomic scale information with the required surface/interface sensitivity. Here we present a short review of recent advances to illustrate the novel understanding derived from the use of new techniques focusing on the gas–solid interface, where two barriers have been bridged: the pressure gap, and the temperature gap. The later gap is very important when dealing with weakly bound molecules, where only by the presence of gas at a suitable pressure can a measurable coverage of adsorbed molecules be achieved. The temperature gap manifests also in the removal of kinetic barriers. Future developments to continue extending the range of pressures are also mentioned. Finally, new challenges that appear, both from X-ray and electron-induced damage to the sample, and from contamination under high pressure of desired gases, while maintaining very low pressures of undesirable ones.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗