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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Daud, Taher↗
NASA NTRS1987

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗
NASA NTRS1987

All NbN tunnel junction fabrication

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

Leduc, H. G.↗
NASA NTRS1989

NbN/MgO/NbN edge-geometry tunnel junctions

The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

Hunt, B. D.↗
NASA NTRS1989

A parametric study of three-dimensional separation at a wing/body junction for supersonic free-stream conditions

The problem of three-dimensional separation at a wing/body junction has been investigated numerically using a three-dimensional Navier-Stokes code which employs the MacCormack's time split finite volume technique. An algebraic grid generation technique is used for generating the grid at a wing/body junction. Specific computational results on velocity and pressure distribution in the separated flow region are compared with the experimental results. A parametric study of flow parameters such as Mach number and Reynolds number have been carried out to understand their effect in interaction flow field. The parametric study indicates a strong dependency of the number of vortices at the junction on Mach number and Reynolds number.

Lakshmanan, B.↗
NASA NTRS1991

Edge-Geometry NbN/MgO/NbN Tunnel Junctions

Superconductor/insulator/superconductor (SIS) tunnel junctions fabricated with base and counter electrodes of NbN separated by thin layers of MgO. Useful as submillimeter-wave mixers and fast switches. Use of edge geometry to define small junction makes possible to fabricate junction by process including conventional photolithography.

Hunt, Brian D.↗
NASA NTRS1991

Tunnel junctions for InP-on-Si solar cells

Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

Keavney, C.↗
NASA NTRS1992

A low noise 230 GHz heterodyne receiver employing .25 sq micron area Nb/AlO(x)/Nb tunnel junctions

Recent results for a full height rectangular waveguide mixer with an integrated IF matching network are reported. Two 0.25 sq micron Nb/AlO(x)/Nb superconducting insulating superconducting (SIS) tunnel junctions with a current density of about 8500 A/sq cm and omega RC of about 2.5 at 230 GHz have been tested. Detailed measurements of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230 GHz receiver incorporates a one octave wide integrated low pass filter and matching network which transforms the pumped IF junction impedance to 50 ohms over a wide range of impedances.

Kooi, Jacob W.↗
NASA NTRS1992

The development of a turbulent junction vortex system

The growth and development of a horseshoe vortex system in an incompressible, three-dimensional turbulent junction flow were investigated experimentally. A streamlined cylinder mounted with its axis normal to a flat surface was used to generate the junction vortex flow. The flow environment was characterized by a body Reynolds number of 183,000, based on the leading edge diameter of the streamlined cylinder. The study included surface flow visualizations, surface pressure measurements, and mean flow measurements of total pressure, static pressure, and velocity distributions in three planes around the base of the streamlined cylinder, and in two planes in the wake flow. Some characterizations of vortex properties based on the measured mean cross-flow velocity components are presented. The results show the presence of a single large, dominant vortex, with strong evidence of a very small corner vortex in the junction between the cylinder and the flat surface. The center of the dominant vortex drifts away from both the body and the flat surface as the flow develops along and downstream of the body. The growth and development of the core of the large, dominant vortex are documented.

Pierce, F. J.↗
NASA NTRS1993

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗
NASA NTRS1993

A 100 GHz Josephson mixer using resistively-shunted Nb tunnel junctions

The authors describe preliminary mixer results using resistively shunted Nb/AlO(x)/Nb tunnel junctions in a 100-GHz waveguide mixer mount. The mixer utilizes robust, lithographically defined devices which have nonhysteretic I-V curves. A receiver temperature of 390 K (DSB) has been obtained with a conversion loss of -6.5 dB. The receiver's behavior agrees qualitatively with the behavior predicted by the resistively shunted junction model. Substantial improvements in performance are expected with the use of better-optimized shunted junctions, and numerical simulations suggest that, if devices with higher ICRN (critical current-normal state resistance) products can be obtained, Josephson effect mixers could be competitive with SIS mixers at high frequencies.

Schoelkopf, R. J.↗
NASA NTRS1993

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

Mueller, Robert L.↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1995

The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Chiang, P. K.↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS1996

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Neudeck, Philip G.↗
NASA NTRS1997

Electrodeposited CuInSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗
NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗