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Report on study of solute segregation and interface stability during crystal growth describes new theoretical model for crystal growth from melt. Report also describes experiments in crystal growth by controlled-gradient freezing and by pulling from melt (Czochralski growth).
The presence of second phase defects, particularly flux inclusions of tellurium rich composition, are of great concern for charge collection efficiency in cadmium zinc telluride (CZT) and cadmium telluride (CT) material intended for applications such as radiation detection. These inclusions can distort applied electric field lines within the detector as well as act as trapping centers for charge carriers. Reduction and/or elimination of these inclusions is required to achieve appropriate charge collection efficiencies, especially in detectors of thicknesses greater than 5 mm. These so-called flux inclusions are understood to form as a consequence of constitutional undercooling at the crystal growth interface. In this study, a forced melt convection technique was applied in Vertical Bridgman (VB) melt growth of CZT without reducing imposed growth rates of ~2 mm/hr. Several rotation profiles were tested while adjusting the melt composition from 51.62 to 61.75 atomic percent (at%) Te where the Te concentration was initially increased to improve overall material purity. With forced melt convection, the best inclusion distributions were achieved with highly Te rich melt compositions, far beyond the stoichiometric composition range for the CZT system. Average inclusion diameters were reduced to 2 µm while inclusions greater than 5 µm were essentially eliminated. Composition analyses of these ingots revealed near equilibrium concentrations of Te, even with ingots grown from Te concentrations as high as 61.75 at% Te. In this paper, a recipe for the reduction of inclusions in CZT melt growth is put forward and the implications of this method on our understanding of inclusion formation are discussed.
It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.
This flight definition project has the specific objective of investigating the kinetics of nucleation and crystal growth in high temperature inorganic oxide, glass forming melts in microgravity. It is related to one1 of our previous NASA projects that was concerned with glass formation for high temperature containerless melts in microgravity. The previous work culminated in two experiments which were conducted aboard the space shuttle in 1983 and 1985 and which consisted of melting (at 1500 C) and cooling levitated 6 to 8 mm diameter spherical samples in a Single Axis Acoustic Levitator (SAAL) furnace. Compared to other types of materials, there have been relatively few experiments, 6 to 8, conducted on inorganic glasses in space. These experiments have been concerned with mass transport (alkali diffusion), containerless melting, critical cooling rate for glass formation, chemical homogeneity, fiber pulling, and crystallization of glass forming melts. One of the most important and consistent findings in all of these experiments has been that the glasses prepared in microgravity are more resistant to crystallization (better glass former) and more chemically homogeneous than equivalent glasses made on earth (1g). The chemical composition of the melt appears relatively unimportant since the same general results have been reported for oxide, fluoride and chalcogenide melts. These results for space-processed glasses have important implications, since glasses with a higher resistance to crystallization or higher chemical homogeneity than those attainable on earth can significantly advance applications in areas such as fiber optics communications, high power laser glasses, and other photonic devices where glasses are the key functional materials. The classical theories for nucleation and crystal growth for a glass or melt do not contain any parameter that is directly dependent upon the g-value, so it is not readily apparent why glasses prepared in microgravity should be more resistant to crystallization than equivalent glasses prepared on earth. Similarly, the gravity-driven convection in a fluid melt is believed to be the primary force field that is responsible for melt homogenization on earth. Thus, it is not obvious why a glass prepared in space, where gravity-driven convection is ideally absent, would be more chemically homogeneous than a glass identically prepared on earth. The primary objective of the present research is to obtain experimental data for the nucleation rate and crystal growth rate for a well characterized silicate melt (lithium disilicate) processed entirely in space (low gravity) and compare these rates with the nucleation and crystal growth rates for a similar glass prepared identically on earth (1g).
Recently, there has been considerable interest in x-ray and gamma ray detectors with large volume and high energy resolution that operate at room temperature. To improve detector energy resolution, the carrier mobility-lifetime product needs to be increased, and the electronic trap state concentration needs to be minimized. Defect concentrations in the part per billion range can alter the charge transport and carrier recombination lifetime. In this work, thermally stimulated current spectroscopy measurements were systematically carried out in bulk halide perovskite single crystals of CsPbBr 3 over a temperature range of 80–320 K. The origins and trap parameters of CsPbBr 3 crystals from the solution growth and melt growth procedures were determined and compared. Trap concentrations were ranged from 1 × 10 11 to 1 × 10 16 cm –3 . Appreciable detector performance was observed for CsPbBr3 crystals with trap concentrations less than 1 × 10 14 cm –3 . The comparison of spectral responses of crystal samples grown using two different methods shows that, after purification, solution-grown crystals are comparable to melt-grown crystals in terms of low defect concentration and improved detector performance. Finally, for an improved mobility-lifetime product and enhanced spectral response to high energy radiation from fissile materials, trap states in either type of a crystal ingot must be reduced closer to 10 11 cm –3 .
Historically, the theoretical treatment of the liquid phases has always been more difficult and complicated than that for solid and gas phases. A liquid has no lattice structure as crystalline solids and the atoms/molecules in the liquid can migrate through it relatively rapidly. On the other hand, it is also interacting with many other atoms/molecules so that the simplifications of the kinetic theory of gases cannot be employed. For more complicated liquids, such as the liquids of high ionicity and those containing hydrogen bonds and electric dipoles, the understanding is far from complete. At the same time, accurate information on the physics and chemistry of semiconductor melts is needed for the quantitative descriptions of the process of crystal growth from melt. The pre-crystallization phenomena in the liquid phase are critical because the properties of the grown crystals depend on the state and structure of the melt as well as the thermal history of the melt during solidification process. However, the data on the liquid phase, such as thermophysical properties of semiconductor melts are scarce, especially for the HgTe-based II-VI ternary compound semiconductors because of their high vapor pressure and extreme toxicity. Analysis of the thermophysical properties of the melt can provide information about structural transitions of the melt during the solidification process. From a broader point of view, the structure of liquids is much more complicated than the crystalline solids, especially the relaxation behavior through different thermal histories. The theory of hetero-phase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics, field theory, physics of nuclear-matter, cosmology, biology and even sociology. This book summarizes the physics and chemistry from the experimental measurements and theoretical analyses of phase diagram, thermodynamic properties, density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary and ternary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the analyses of these results. The main objectives of this study are: (1) to provide the phase diagrams and thermodynamic properties of Hg-Cd-Te and Hg-Zn-Te systems through quantitatively fitting the experimental data by assuming an associated solution model for the liquid phase, (2) to experimentally measure the thermophysical properties of the Hg-Cd-Te and Hg-Zn-Te melts, including density, viscosity, electrical conductivity and thermal conductivity as functions of temperature and composition and (3) to enhance the fundamental knowledge of hetero-phase fluctuations and relaxation phenomena in the melts and extend our understanding of the solidification process in order to interpret the experimental results of crystal growth so as to improve the melt growth processes of the compound semiconductor. The physics and chemistry of Te and HgTe-based ternary melts were explored through the studies of the structural transformation during melting, the supercooling during solidification, the relaxation phenomena after rapid cooling of the melts and the metal-semiconductor transition in the melts through the analyses of electrical conductivity and Lorenz number. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the analysis of the homogenization process in the melt will also be presented.
A simple model for the constrained growth of an array of cells or dendrites in a binary alloy in the presence of an imposed positive temperature gradient in the liquid is proposed, with the dendritic or cell tip radius calculated using the marginal stability criterion of Langer and Muller-Krumbhaar (1977). This approach, an approach adopting the ad hoc assumption of minimum undercooling at the cell or dendrite tip, and an approach based on the stability criterion of Trivedi (1980) all predict tip radii to within 30 percent of each other, and yield a simple relationship between the tip radius and the growth conditions. Good agreement is found between predictions and data obtained in a succinonitrile-acetone system, and under the present experimental conditions, the dendritic tip stability parameter value is found to be twice that obtained previously, possibly due to a transition in morphology from a cellular structure with just a few side branches, to a more fully developed dendritic structure.
The compound semiconductor material PbSnTe has been investigated by NASA Langley Research Center as part of the Material Processing in Space (MPS) experiment in the framework of the Space Shuttle program. The long-range goal of the research is the improving of the performance of infrared detectors for use in remote sensing experiments. Three distinct techniques will be used in the low-g environment of space: two techniques involving bulk growth from melt and a vapor growth technique. In order to establish realistic estimates of the required time for experiments and to determine the thermal gradients that will be required to avoid constitutional supercooling, the diffusion coefficients must be accurately measured, however more data especially in the vapor-solid phase relations are needed.
Payoffs of crystal growth in space in the areas of understanding growth and melt flow mechanisms, the growth of more uniform crystals with fewer defects, and the growth of crystals difficult or impossible to grow on Earth are summarized. The advantages of various heating methods are summarized. Critical devices requiring the uniformity and lower defect density of crystals grown in space are listed.
From heat-balance considerations at the growing interface and an assumption of predominantly radiative heat loss from the surface, an expression for the maximum growth rate of melt-grown ribbon-shaped crystals has been derived. For a given material and a large width-to-thickness ratio, the maximum growth rate varies as the square root of the ribbon thickness and is independent of its width. A comparison of the maximum cylindrical and ribbon growth rates is made for the silicon system. Some representative values at 7.5 cm diameter or width are 45 cm/h or 2000 cu cm per h for a cylindrical Czochralski-grown crystal and 625 cm/h or 95 cu cm per h for a 0.02-cm-thick ribbon.
A simple model which describes the growth of an 'array' of dendrites into a supercooled, binary, alloy melt is presented. Solute diffusion is calculated by superposing the solutions given by Flemings and Zener, and also, by superposing the solutions given by Ivantsov and Flemings. A general expression for the transport solution is suggested from which all other dendrite growth models presented earlier may be obtained as special cases. It is shown that both 'free' and 'constrained' growth may be described by a single transport solution, which indicates that (1) both thermal and solutal effects will be important during 'free' growth in dilute alloys, (2) only solutal effects are predominant during 'free' growth in concentrated alloys and during 'constrained' growth. An examination of the relevant dimensionless parameters also suggests that all dendrite growth models, regardless of the assumptions used to determine the tip radius (marginal stability, minimum undercooling, maximum velocity, minimum entropy production) should predict the experimentally observed extrema in tip radius and growth velocity in dilute alloys, during 'free' dendritic growth. Experimental data in binary H2O-NaCl and succinonitrile-acetone solutions are shown to be in good agreement with the model.
This flight definition project has the specific objective of investigating the kinetics of nucleation and crystal growth in high temperature inorganic oxide, glass forming melts in microgravity. It is related to one of our previous NASA projects that was concerned with glass formation for high temperature containerless melts in microgravity. The previous work culminated in two experiments which were conducted aboard the space shuttle in 1983 and 1985 and which consisted of melting (at 1500 C) and cooling levitated 6 to 8 mm diameter spherical samples in a Single Axis Acoustic Levitator (SAAL) furnace. Compared to other types of materials, there have been relatively few experiments, 6 to 8, conducted on inorganic glasses in space. These experiments have been concerned with mass transport (alkali diffusion), containerless melting, critical cooling rate for glass formation, chemical homogeneity, fiber pulling, and crystallization of glass forming melts. One of the most important and consistent findings in all of these experiments has been that the glasses prepared in microgravity are more resistant to crystallization (better glass former) and more chemically homogeneous than equivalent glasses made on Earth (1 g). The chemical composition of the melt appears relatively unimportant since the same general results have been reported for oxide, fluoride and chalcogenide melts. These results for space-processed glasses have important implications, since glasses with a higher resistance to crystallization or higher chemical homogeneity than those attainable on Earth can significantly advance applications in areas such as fiber optics communications, high power laser glasses, and other photonic devices where glasses are the key functional materials.
This paper reconsiders the question of stability of a planar solid-liquid interface in an undercooled alloy melt without making the restrictive assumption of no heat flow in the solid (i.e., Gs = 0). The results of this analysis indicate that, provided the thermal gradient on the solid side of the interface, Gs, is positive, stability can be achieved in an undercooled alloy melt for growth rates R greater than Ra (where Ra is the absolute stability limit of Mullins and Sekerka, 1964). Thus, the absolute stability criterion for steady-state planar growth in an undercooled alloy melt is the same as derived earlier by Mullins and Sekerka for directional solidification. Relaxing the restrictive assumption of Gs = 0 also reveals that there is a regime of stability for low growth rates and low supercoolings.
Recent Arctic warming outpaces global warming and is characterized by dramatic changes in sea ice (record sea ice loss, thinner and more seasonal ice cover), warming SSTs, and a lengthening melt season. These changes impact the surface energy budget and the sensitivity of sea ice to radiative forcing, namely an increased sensitivity of thinner ice to local radiative forcings and a weaker buffering of surface-atmosphere exchanges of heat and moisture. However, these processes are a large source of uncertainty in global climate models with prior studies finding that poor representations of downwelling longwave radiation and sea ice albedo lead to model spread in sea ice conditions. A limitation of prior work is examining sea ice-atmosphere interactions through an Eulerian framework. This study utilizes a sea ice parcel dataset in a LaGrangian framework, allowing for tracking of surface energy budget-sea ice interactions over the lifespan of individual sea ice parcels; this framework also allows for the quantification of the sea ice response to episodic weather events along with seasonal drivers, including the drivers of rapid growth and melt events. First, lag-lead relationships between relevant surface energy budget terms and sea ice thickness changes are explored to understand the atmospheric conditions preceding rapid growth and melt. The impact of episodic events- moisture intrusion, warm air outbreaks, cyclones- on sea ice growth are also investigated by stratifying first-year parcels by sea ice thickness at the end of the growth season and analyzing the effect of atmospheric variability (number and intensity of episodic events) on parcel thickness change. Lastly, parcel growth and melt and the associated radiative anomalies are compared to snowfall events/snow thickness to determine how snowfall modifies the interaction between the local surface energy budget and sea ice mass balance.
Computer simulation was conducted to study a modified floating-zone crystal growth process, in which the melt surface is mostly covered with a heated ring. The growth of 6-mm diameter single crystals of NaNO3 was considered, and the effects of the following parameters were studied: (1) temperature of the ring, (2) growth rate, (3) surface tension-temperature coefficient of the melt, (4) thermal expansion coefficient of the melt, and (5) gravity. It was demonstrated that thermocapillary convection in the melt zone is reduced significantly in this modified process. The model was checked against the measured lengths of the meniscus near the growth front and axial temperature distribution in a growing crystal, and the agreement was good.
A novel partially confined configuration is proposed for the crystal growth of semiconductors from the melt, including those with volatile constituents. A triangular prism is employed to contain the growth melt. Due to surface tension, the melt will acquire a cylindrical-like shape and thus contact the prism along three parallel lines. The three empty spaces between the cylindrical melt and the edges of the prism will accommodate the expansion of the solidifying semiconductor, and in the case of semiconductor compounds with a volatile constituent, will permit the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry. Theoretical and experimental evidence in support of this new type of confinement is presented.
Study on effects of melt and growth on solute segregation and crystal quality uses statistical techniques to reduce sample numbers and experimental costs.
The stability of a solid-liquid interface in a hypercooled melt is studied, taking into account attachment kinetics, surface energy, and surface energy in the heat balance. There is a basic-state solution with the planar interface moving at constant speed. Linear-stability theory gives a long-wave absolute-stability limit. Near this point a string model is introduced in which a thermal-boundary-layer approximation is used and an evolution equation for the interface is obtained. In a limiting case this interface equation reduces to a Kuromoto-Sivashinsky equation. Comparison with experimental and numerical results are discussed, and a conceptual picture of unconstrained growth for all undercoolings is addressed.