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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Rapid evolution of analog circuits configured on a field programmable transistor array

The purpose of this paper is to illustrate evolution of analog circuits on a stand-alone board-level evolvable system (SABLES). SABLES is part of an effort to achieve integrated evolvable systems. SABLES provides autonomous, fast (tens to hundreds of seconds), on-chip circuit evolution involving about 100,000 circuit evaluations. Its main components are a JPL Field Programmable Transistor Array (FPTA) chip used as transistor-level reconfigurable hardware, and a TI DSP that implements the evolutionary algorithm controlling the FPTA reconfiguration. The paper details an example of evolution on SABLES and points out to certain transient and memory effects that affect the stability of solutions obtained reusing the same piece of hardware for rapid testing of individuals during evolution.

SABLES analog circuits field programmable transist↗
NASA NTRS2006

Robust Bioinformatics Recognition with VLSI Biochip Microsystem

A microsystem architecture for real-time, on-site, robust bioinformatic patterns recognition and analysis has been proposed. This system is compatible with on-chip DNA analysis means such as polymerase chain reaction (PCR)amplification. A corresponding novel artificial neural network (ANN) learning algorithm using new sigmoid-logarithmic transfer function based on error backpropagation (EBP) algorithm is invented. Our results show the trained new ANN can recognize low fluorescence patterns better than the conventional sigmoidal ANN does. A differential logarithmic imaging chip is designed for calculating logarithm of relative intensities of fluorescence signals. The single-rail logarithmic circuit and a prototype ANN chip are designed, fabricated and characterized.

bioinformatics↗
NASA NTRS2005

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗
NASA NTRS1992

Fault detection and bypass in a sequence information signal processor

The invention comprises a plurality of scan registers, each such register respectively associated with a processor element; an on-chip comparator, encoder and fault bypass register. Each scan register generates a unitary signal the logic state of which depends on the correctness of the input from the previous processor in the systolic array. These unitary signals are input to a common comparator which generates an output indicating whether or not an error has occurred. These unitary signals are also input to an encoder which identifies the location of any fault detected so that an appropriate multiplexer can be switched to bypass the faulty processor element. Input scan data can be readily programmed to fully exercise all of the processor elements so that no fault can remain undetected.

Peterson, John C.↗
NASA NTRS2006

CMOS imager for pointing and tracking applications

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Pain, Bedabrata↗
NASA NTRS1977

Bubble domain circuit organization

An on-chip bubble domain circuit organization. One or more storage registers are connected to a propagation path whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. The propagation path includes a generator for producing the initial bubbles which are expanded into any desired number of new bubbles by a unique multiple output replicator. A unique input decoder is utilized to determine to which storage register the bubbles from the replicator will be directed along the propagation path. Those bubbles not selected may be annihilated. An output decoder utilizing essentially the same decoding scheme as the input decoder, selectively receives bubbles from the storage register. A transfer and replicate switch is utilized between the storage register and output decoder to selectively transfer bubbles to the output decoder. The output decoder may collapse all of the bubbles from certain storage registers so that only the information from the selected storage register reaches the detector. The detectors in turn produce the chip output signal. External control electronics are utilized to control the selective operation of the various devices utilized in the propagation path.

Chen, Thomas T.↗
NASA NTRS2008

On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz

The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.

Samoska, Lorene↗
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗
NASA NTRS2008

Efficient Coupler for a Bessel Beam Dispersive Element

A document discusses overcoming efficient optical coupling to high orbital momentum modes by slightly bending the taper dispersive element. This little shape distortion is not enough to scramble the modes, but it allows the use of regular, free-beam prism coupling, fiber coupling, or planar fiber on-chip coupling with, ultimately, 100 percent efficiency. The Bessel-beam waveguide is bent near the contact with the coupler, or a curved coupler is used. In this case, every Bessel-beam mode can be successfully coupled to a collimated Gaussian beam. Recently developed Bessel-beam waveguides allow long optical delay and very high dispersion. Delay values may vary from nanoseconds to microseconds, and dispersion promises to be at 100 s/nm. Optical setup consisted of a red laser, an anamorphic prism pair, two prism couplers, and a bent, single-mode fiber attached to prisms. The coupling rate increased substantially and corresponded to the value determined by the anamorphic prism pair.

Savchenkov, Anatoliy↗
NASA NTRS2008

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗
NASA NTRS2009

Fabrication of an Antenna-Coupled Bolometer for Cosmic Microwave Background Polarimetry

We describe the development of a detector for precise measurements of the cosmic microwave background polarization. The detector employs a waveguide to couple light between a pair of Mo/Au superconducting transition edge sensors (TES) and a feedhorn. Incorporation of an on-chip ortho-mode transducer (OMT) results in high isolation. The OMT is micromachined and bonded to the microstrip and TES circuits in a low temperature wafer bonding process. The wafer bonding process incorporates a buried superconducting niobium layer with a single crystal silicon layer which serves as the leg isolated TES membrane and as the microstrip dielectric. We describe the micromachining and wafer bonding process and report measurement results of the microwave circuitry operating in the 29-43GHz band along with Johnson noise measurements of the TES membrane structures and development of Mo/Au TES operating under '00mK.

Denis, K.L.↗
NASA NTRS2009

VLSI Microsystem for Rapid Bioinformatic Pattern Recognition

A system comprising very-large-scale integrated (VLSI) circuits is being developed as a means of bioinformatics-oriented analysis and recognition of patterns of fluorescence generated in a microarray in an advanced, highly miniaturized, portable genetic-expression-assay instrument. Such an instrument implements an on-chip combination of polymerase chain reactions and electrochemical transduction for amplification and detection of deoxyribonucleic acid (DNA).

Fang, Wai-Chi↗
NASA NTRS2009

Compact, Low-Overhead, MIL-STD-1553B Controller

A compact and flexible controller has been developed to provide MIL-STD- 1553B Remote Terminal (RT) communications and supporting and related functions with minimal demand on the resources of the system in which the controller is to be installed. (MIL-STD-1553B is a military standard that encompasses a method of communication and electrical-interface requirements for digital electronic subsystems connected to a data bus. MIL-STD-1553B is commonly used in defense and space applications.) Many other MIL-STD-1553B RT controllers are complicated, and to enable them to function, it is necessary to provide software and to use such ancillary separate hardware devices as microprocessors and dual-port memories. The present controller functions without need for software and any ancillary hardware. In addition, it contains a flexible system interface and extensive support hardware while including on-chip error-checking and diagnostic support circuitry. This controller is implemented within part of a modern field-programmable gate array.

Katz, Richard↗
NASA NTRS2009

Low-Noise MMIC Amplifiers for 120 to 180 GHz

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Pukala, David↗
NASA NTRS2007

NASA Tech Briefs, June 2007

Topics covered include: High-Accuracy, High-Dynamic-Range Phase-Measurement System; Simple, Compact, Safe Impact Tester; Multi-Antenna Radar Systems for Doppler Rain Measurements; 600-GHz Electronically Tunable Vector Measurement System; Modular Architecture for the Measurement of Space Radiation; VLSI Design of a Turbo Decoder; Architecture of an Autonomous Radio Receiver; Improved On-Chip Measurement of Delay in an FPGA or ASIC; Resource Selection and Ranking; Accident/Mishap Investigation System; Simplified Identification of mRNA or DNA in Whole Cells; Printed Multi-Turn Loop Antennas for RF Biotelemetry; Making Ternary Quantum Dots From Single-Source Precursors; Improved Single-Source Precursors for Solar-Cell Absorbers; Spray CVD for Making Solar-Cell Absorber Layers; Glass/BNNT Composite for Sealing Solid Oxide Fuel Cells; A Method of Assembling Compact Coherent Fiber-Optic Bundles; Manufacturing Diamond Under Very High Pressure; Ring-Resonator/Sol-Gel Interferometric Immunosensor; Compact Fuel-Cell System Would Consume Neat Methanol; Algorithm Would Enable Robots to Solve Problems Creatively; Hypothetical Scenario Generator for Fault-Tolerant Diagnosis; Smart Data Node in the Sky; Pseudo-Waypoint Guidance for Proximity Spacecraft Maneuvers; Update on Controlling Herds of Cooperative Robots; and Simulation and Testing of Maneuvering of a Planetary Rover.

Source record↗
NASA NTRS2010

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Siegel, Peter↗
NASA NTRS1995

Application of New Technology to Future Celestial Trackers

New developments in image sensors and optical materials have opened the door to dramatic mass and power reductions in celestial tracker designs. The rapid development of active pixel sensors (APS) has provided a new detector choice offering high on-chip integration of support circuitry at reduced power consumption. Silicon-Carbide (Si-C) optics are one of the new developments in low-mass optical components. We describe the celestial tracker needs of an Autonomous Feature and Star Tracking (AFAST) system designed for autonomous spacecraft control. Details of a low mass celestial tracker, based on a low power APS array and optimized for an AFAST system, are discussed.

active↗
NASA NTRS1996

Programmable Multiresolution CMOS Active Pixel Sensor

CMOS active pixel sensors (APS) allow the flexibility of placing signal processing circuitry on the imaging focal plane. The multiresolution CMOS APS can perform block averaging on-chip to eliminate the off-chip software intensive image processing. This 128 x 128 APS array can be read out at any user-defined resolution by configuring a set of digital shift registers. The resolution frame rate is 30 Hz with higher rates for all other image resolutions.

APS↗