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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

High speed computerized data acquisition of photovoltaic V-I characteristics

The voltage current (V-I) characteristics of the photovoltaic array were studied under actual environmental conditions. A method of data acquisition was devised that uses a capacitor charge technique to obtain the V-I characteristic and a computerized data system to display, record and process the data. The capacitor charge technique uses an array shorting transistor and a capacitor bank to sweep the array operating voltage and current from short circuit to open circuit in a specified time (approximately 125 ms). The computerized data system is synchronized with this transition and repetitively samples the array voltage and current during the transition and records the ambient conditions. This data is then normalized by the computer to standard conditions (100 mW/sq cm, 28 C) and is available in tabular and graphic form for both the voltage current and voltage power characteristics. The capacitor charge technique is described.

Delombard, R.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗
NASA NTRS1986

An IBM PC-based math model for space station solar array simulation

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Emanuel, E. M.↗
NASA NTRS1988

Molecular-Beam-Epitaxy Program

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Sparks, Patricia D.↗
NASA NTRS1991

Thermocouple-Signal-Conditioning Circuit

Thermocouple-signal-conditioning circuit acting in conjunction with thermocouple, exhibits electrical behavior of voltage in series with resistance. Combination part of input bridge circuit of controller. Circuit configured for either of two specific applications by selection of alternative resistances and supply voltages. Includes alarm circuit detecting open circuit in thermocouple and provides off-scale output to signal malfunctions.

Simon, Richard A.↗
NASA NTRS1979

Voltage-current-power meter for photovoltaic solar arrays

A meter is disclosed for measuring the voltage, current, and power (VIP) parameters of a photovoltaic solar array, or array module, under sunlight operating conditions utilizing a variable load connected across the array and controlled by a voltage regulator which responds to the difference between the output voltage of the array and a programmed test voltage from a source which generates a single ramp voltage for measuring and recording current as a function of voltage, repeated ramp voltages at a high rate for peak output measurements or a DC voltage for VIP measurements at selected points on the I-V characteristic curve of the array. The voltage signal from a current sensing element, such as a shunt resistor in series with the variable load, is compared with the output current of a reference solar cell to provide a normalizing signal to be added to the signal from the current-sensing element in order to provide a record of array current as a function of array voltage, i.e., for all load conditions from short circuit to open circuit. As the normalized current is thus measured, an analog multiplier multiplies the array voltage and normalized current to provide a measurement of power. Switches are provided to selectively connect the power, P, current, I, or voltage, V, to a meter, directly or through a peak detector. At the same time any one of the parameters V, I and P may be recorded as a function of any other parameter.

Ross, Ronald G.↗
NASA NTRS2013

Detectors Ensure Function, Safety of Aircraft Wiring

Pedro Medelius waited patiently in his lab at Kennedy Space Center. He had just received word that a colleague was bringing over a cable from a Space Shuttle solid rocket booster to test Medelius new invention. Medelius was calm until his colleague arrived, with about 30 other people. "Talk about testing under pressure," says Medelius. "There were people there from the Navy, the Air Force, and the Federal Aviation Administration." After the group s arrival, Medelius took a deep breath and connected his Standing Wave Reflectometer (SWR) to the cable. He wiggled the cable around, and the display showed a fault (a short or open circuit in wire) about an inch and a half inside the connector on the cable. His colleague questioned the results, because he had already checked that area on the cable. Medelius used the SWR to check again but got the same result. "That is when we took the cable apart and looked inside," Medelius says. "Lo and behold, that was exactly where the fault was." The impetus for Medelius new wire inspection technology came about in 1999 when one of the space shuttles lost power due to a fault somewhere in its more than 200 miles of electrical wiring. "The backup circuit was activated and prevented a major dysfunction, but nevertheless, there was a problem with the wiring," Medelius describes. Even though technicians used a device called a multimeter to measure the electrical current to find which wire had a fault, it could not pinpoint exactly where on the wire the fault was located. For that, technicians had to visually inspect the wire. "Sometimes they would have to remove the whole wire assembly and visually inspect every single wire. It was a very tedious operation because the wires are behind cabinets. They go all over the place in the shuttle," says Medelius. "NASA needed an instrument capable of telling them exactly where the faults were occurring." To meet NASA s needs for a highly precise device to inspect electrical power bundles, wires, and connectors, Medelius devised the SWR. "It came down to what was affected when a wire is short circuited or opened," he says. "We worked out a few equations based on physical principles." The SWR proved very sensitive, and the technology was patented.

Source record↗
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
NASA NTRS1981

Multijunction high voltage concentrator solar cells

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Valco, G. J.↗
NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗
NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗
NASA NTRS1982

Effects of the mode of storage on the capacity fading of the sintered nickel electrodes

A systematic investigation of the effect of temperature and two conditions of storage, shortened and open circuit, on the capacity fading of sintered nickel electrodes in NiCd batteries was conducted. All testing was done on sintered electrodes in flooded cells. Cycling tests to measure the capacity were performed at room temperature. The capacity out to one volt, a capacity useful for satellite applications. Test results indicated that: the shortened electrode showed a higher rate of loss than the open circuit electrodes; there was an increase in both modes with an increase in temperature; there was a loss of capacity with time of storage; a general degradation was observed as a function of time; shortened electrodes showed a higher end of charge than the open circuit ones; and at room temperature there was a lower loss in the open circuit electrode than in the shortened one.

Vyes, B.↗
NASA NTRS1977

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Daiello, R. V.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
DOE OSTI2020

Microbial potentiometric sensor array measurements in unsaturated soils

The overarching goal of this study is to demonstrate a novel technology for monitoring changes in electrical potential of unsaturated soils using biofilm-populated electrodes. The novelty of the study stems from the fact that it demonstrates a method for measuring open-circuit potentials (OCP) in environments without the presence of an electrolyte solution. This study also reveals that using a biofilm-populated electrode as a reference in stable environments could successfully be employed to assess and monitor the electrochemical potential generated by plants and microorganisms. The findings imply that long-term (months to years) and real-time measurements of the open-circuit potential in unsaturated soils are possible. Because MPS arrays can directly measure open-circuit potential from the biofilm, the challenges related to locally induced electrochemical changes caused by microorganisms in the soil to achieve optimum physiological levels are eliminated. The simplicity of the technology, which allows for multiple indicator electrodes to be referenced against an “internal” reference electrode, enables spatial-temporal monitoring of the changes in the soil and the generation of 2D- or 3D-signal patterns. Once a signal pattern, generated by an array of sensors, develops (usually after 30 to 90 days), it does not significantly change unless the soil is exposed to external stimuli. The observed OCP phenomena, however, suggests that the change in OCP signal is independent of changes in soil conductivity resulting from the addition of water. In brief, findings suggest that the proposed technology can enable multidimensional profiling and long-term monitoring of changes occurring in unsaturated soils without direct implications of presence of water. The changes in the 2D or 3-D signal patterns, however, can be correlated to other important parameters that characterize soil health.

54 ENVIRONMENTAL SCIENCES↗