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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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114 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Interlayers and associated systems, devices, and methods

Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.

Baldo, Marc A.↗
DOE OSTI2026

Instrumentation and Samples (CRADA Final Report)

Instruments which are categorized as shared user instruments at the National Laboratory of the Rockies (NLR) will be utilized for ongoing technical work. Samples will be provided by University of Colorado Boulder (CU) and thus no need for materials at NLR is anticipated.

(Ga1- xZnx)(N1-xOx)↗
DOE OSTI2021

Engineering of Ferroic Orders in Thin Films by Anionic Substitution

Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO 3 oxide perovskites are identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, the observation of room-temperature multiferroic orders in multi-anion SrNbO 3-x N x thin films is reported. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, ferroelectric responses that originate from the structural symmetry breaking associated are found with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. So findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.

thin-films↗
DOE OSTI2024

Surface anchoring requirements for vanadia clusters on titanium oxide surfaces and their impact on activity for oxidative dehydrogenation of ethanol

Titanium oxide site requirements for the anchoring of catalytically active forms of dispersed vanadia species are investigated. Using a series of oxygen-modified titanium nitride materials, we systematically modify the available vanadia-anchoring moieties on the titanium-bearing support surface. This strategy in turn results in a very narrow size distribution of well-dispersed vanadia clusters anchored on the support. This synthesis technique ensures that only highly dispersed vanadia is present on the catalyst surface even at nominal monolayer coverages. A deeper insight into the catalytic behavior for ethanol partial oxidation of the active vanadia species is obtained by comparing intrinsic kinetic and thermodynamic parameters of kinetically relevant reaction steps (heat of ethanol adsorption, hydrogen abstraction activation energy, and the energetics of catalyst reoxidation). In conclusion, it is found that these parameters are dependent on the relative amount of oxygen in the titanium-bearing support and the resulting distribution of vanadia species, which validates the premise of a potential participation of lattice oxygen atoms of the titania support into the catalytic activity of active vanadia species.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.

defect passivation↗
DOE OSTI2021

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

In the ideal case, plasma-enhanced atomic layer etching enables the ability to not only remove one monolayer of material but also leave adjacent layers undamaged. This dual mandate requires fine control over the flux of species to ensure efficacy, while maintaining an often arduously low ion energy. Electron beam-generated plasmas are well-suited for etching at low ion energies as they are generally characterized by highly charged particle densities (10 10 –10 11 cm –3 ) and low electron temperatures (<1.0 eV), which provide the ability to deliver a large flux of ions whose energies are <5 eV. Raising the ion energy with substrate biasing thus enables process control over an energy range that extends down to values commensurate with the bond strength of most material systems. In this work, we discuss silicon nitride etching using pulsed, electron beam-generated plasmas produced in argon-SF6 backgrounds. We pay particular attention to the etch rates and selectivity versus oxidized silicon nitride and polycrystalline silicon as a function of ion energy from a few eV up to 50 eV. Here, we find the blanket etch rate of Si 3 N 4 to be in the range of 1 A/s, with selectivities (versus SiO 2 and poly-Si) greater than 10:1 when ion energies are below 30 eV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗