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At least 127 records · Page 7

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NASA NTRS2011

Multiple-Event, Single-Photon Counting Imaging Sensor

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Zheng, Xinyu↗

NASA NTRS2012

Fiber Bragg Grating Sensor System for Monitoring Smart Composite Aerospace Structures

Lightweight, electromagnetic interference (EMI) immune, fiber-optic, sensor- based structural health monitoring (SHM) will play an increasing role in aerospace structures ranging from aircraft wings to jet engine vanes. Fiber Bragg Grating (FBG) sensors for SHM include advanced signal processing, system and damage identification, and location and quantification algorithms. Potentially, the solution could be developed into an autonomous onboard system to inspect and perform non-destructive evaluation and SHM. A novel method has been developed to massively multiplex FBG sensors, supported by a parallel processing interrogator, which enables high sampling rates combined with highly distributed sensing (up to 96 sensors per system). The interrogation system comprises several subsystems. A broadband optical source subsystem (BOSS) and routing and interface module (RIM) send light from the interrogation system to a composite embedded FBG sensor matrix, which returns measurand-dependent wavelengths back to the interrogation system for measurement with subpicometer resolution. In particular, the returned wavelengths are channeled by the RIM to a photonic signal processing subsystem based on powerful optical chips, then passed through an optoelectronic interface to an analog post-detection electronics subsystem, digital post-detection electronics subsystem, and finally via a data interface to a computer. A range of composite structures has been fabricated with FBGs embedded. Stress tensile, bending, and dynamic strain tests were performed. The experimental work proved that the FBG sensors have a good level of accuracy in measuring the static response of the tested composite coupons (down to submicrostrain levels), the capability to detect and monitor dynamic loads, and the ability to detect defects in composites by a variety of methods including monitoring the decay time under different dynamic loading conditions. In addition to quasi-static and dynamic load monitoring, the system can capture acoustic emission events that can be a prelude to structural failure, as well as piezoactuator-induced ultrasonic Lamb-waves-based techniques as a basis for damage detection.

Moslehi, Behzad↗

NASA NTRS2012

Process for Patterning Indium for Bump Bonding

An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

Denis, Kevin↗

DOE OSTI2021

Strategies for on-chip digital data compression for X-ray pixel detectors

Here, the continued desire for X-ray pixel detectors with higher frame rates will stress the ability of application-specific integrated circuit (ASIC) designers to provide sufficient off-chip bandwidth to reach continuous frame rates in the 1 MHz regime. To move from the current 10 kHz to the 1 MHz frame rate regime, ASIC designers will continue to pack as many power-hungry high-speed transceivers at the periphery of the ASIC as possible. In this paper, however, we present new strategies to make the most efficient use of the off-chip bandwidth by utilizing data compression schemes for X-ray photon-counting and charge-integrating pixel detectors. In particular, we describe a novel in-pixel compression scheme that converts from analog to digital converter units to encoded photon counts near the photon Poisson noise level and achieves a compression ratio of >1.5x independent of the dataset. In addition, we describe a simple yet efficient zero-suppression compression scheme called "zeromask" (ZM) located at the ASIC's edge before streaming data off the ASIC chip. ZM achieves average compression ratios of >4x, >7x, and >8x for high-energy X-ray diffraction, ptychography, and X-ray photon correlation spectroscopy datasets, respectively. We present the conceptual designs, register-transfer level block diagrams, and the physical ASIC implementation of these compression schemes in 65 nm CMOS. When combined, these two digital compression schemes could increase the effective off-chip bandwidth by a factor of 6-12x.

47 OTHER INSTRUMENTATION↗

DOE OSTI2026

Dynamically tunable membrane metasurfaces for infrared spectroscopy and strong light-matter interactions

Mid-infrared spectroscopy enables biochemical sensing by identifying vibrational molecular fingerprints, but it faces limitations in instrumentation portability and analytical sensitivity. Optical metasurfaces with strong mid-infrared photonic resonances provide an attractive solution towards on-chip spectrometry and sensitive molecular detection, yet their static nature hinders their anticipated impact. Here, we introduce and demonstrate dynamically tunable silicon membrane metasurfaces exhibiting high-Q transmissive resonances in the fingerprint region. By harnessing silicon’s thermo-optical properties, we achieve continuous modulation of coupling-induced transparency (CIT) modes that emerge upon the interference of quasi-bound states in the continuum (q-BICs) and surface lattice modes (SLMs). We measure a spectral tuning rate of 0.06 cm −1 K −1 by continuously sweeping the sharp CIT resonances over a 23.5 cm −1 spectral range across a temperature range of 300–700 K. In the current proof‑of‑concept implementation, the dynamic transmission control enables non-contact chemical analysis of polymer films by detecting characteristic absorption bands of polystyrene (1450 and 1492 cm −1 ) and poly(methyl methacrylate) (1730 cm −1 ) without requiring conventional spectrometers. When analyte molecules fill the metasurface-generated photonic cavities, we demonstrate vibrational strong coupling between the poly(methyl methacrylate)’s carbonyl band and the CIT mode, manifested in a Rabi splitting of ~43 cm −1 . Our results establish a new photonic platform that unites spectral precision, strong field enhancement, and reconfigurability, offering diverse potential for compact mid-infrared spectroscopy, molecular sensing, and programmable polaritonic photonics.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2021

Spatial heterogeneity analyses of pore structure and mineral composition of Barnett Shale using X-ray scattering techniques

The spatial heterogeneity of pore structure and mineral composition at mu m to mm scales in mm to cm-sized shale samples complicates the laboratory measurements of porosity & pore size distribution and consequently reservoir quality evaluation. Traditional fluid invasion characterization methods typically take hours to days to get data and can only test relatively small samples (usually 2.54 cm diameter core plugs and mm-sized rock chips). Furthermore, the Xray scattering techniques at the Advanced Photon Source of the Argonne National Laboratory have the capability to non-destructively determine the pore structure and mineral composition of mm x mm area in a short time of seconds and to hold several to hundreds of mm 2 sized sample to conduct large area heterogeneity analysis in the short duration of hours. With the use of ultra-small angle X-ray scattering (USAXS), small-angle X-ray scattering (SAXS), and wide-angle X-ray scattering (WAXS), the porosity, surface area and pore size distribution of two Barnett Shale samples have been mapped out and the mineral compositions are determined qualitatively. Overall, the porosity and pore surface area of the Barnett Shale Sample A over a 36 cm2 area ranges from 1.70 % to 8.13 % and 8.87 m 2 /g to 40.2 m 2 /g respectively. The porosity and surface area of Sample B over a 24 cm 2 area varies from 3.15 % to 11.7 % and 18.3 m 2 /g to 60.2 m 2 /g. In Sample A, the mineral composition shows a shift from carbonate-rich to siliciclastic-rich over a distance of several millimeters. For Sample B, the mineral compositions are mainly siliciclastic and do not show an obvious lithological change. The direct observations of high spatial heterogeneity of pore structure and mineral composition in shale illustrate the utility of integrated X-ray scattering techniques to provide valuable insights into shale studies and reservoir evaluation.

58 GEOSCIENCES↗

DOE OSTI2021

Optics-on-a-chip for ultrafast manipulation of 350-MHz hard x-ray pulses

Microelectromechanical systems (MEMS) are miniature devices integrated into a vast range of industrial and consumer applications. Optical MEMS are developed for dynamic spatiotemporal control in lightwave manipulation and communication as modulators, switches, multiplexers, spectrometer, etc. However, they have not been shown to function similarly in sub-nm wavelength regimes, namely, with hard x-rays, as high-brilliance pulsed x-rays have proven powerful for addressing challenges in time-domain science, from energy conversion to neurobiological control. While desirable temporal properties of x-ray pulses can be enhanced by optics, conventional x-ray optics are inherently massive in size, hence, never dynamic. We demonstrate highly ultrafast x-ray optics-on-a-chip based on MEMS capable of modulating hard x-ray pulses exceeding 350 MHz, 10 3 × higher than any other mechanical modulator, with a pulse purity >10 6 without compromising the spectral brilliance. Moreover, the timing characteristics of the devices can be tuned on-the-fly to deliver optimal pulse properties to create a host of dynamic x-ray instruments and applications, impossible with traditional optics of 10 9 × bulkier and more massive. The advent of the ultrafast optics-on-a-chip heralds a new paradigm of x-ray photonics, time-domain science, and accelerator diagnostics, especially at not only the future-generation light sources that offer coherent and high-frequency pulses but also lab-based facilities that normally do not offer timing structures.

42 ENGINEERING↗

DOE OSTI2024

Qubit-Based Detector For Dark Matter Search And Radiation Studies

One of the challenges in exploring promising novel materials for dark matter searches is the detection of sub-eV energy excitations from light-dark matter interaction with a target material. Dark matter interaction can excite sub-eV optical phonon modes in polar materials like sapphire. We plan to utilize superconducting qubits on a sapphire substrate to study their response to energy deposition into the superconducting film and the substrate by irradiating them with photons and particles and also generating phonons in the chip. A fraction of the incident energy is expected to break Cooper pairs in the superconductor, releasing quasiparticles. As the quasiparticles tunnel across the Josephson junction, the charge parity of the qubit changes. The parity switching rate is proportional to the quasiparticle density in the qubit superconductor film and can be measured using standard qubit readout protocol. This presentation describes our ongoing attempt to build such a prototype detector.

Khatiwada, Rakshya↗

NASA NTRS1969

An integrated circuit switch

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

Bonin, E. L.↗

NASA NTRS1999

MEMS Using SOI Substrate

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Tang, Tony K.↗

DOE OSTI2021

Multifunctional Superconducting Nanowire Quantum Sensors

Superconducting nanowire single-photon detectors (SNSPDs) offer high-quantum-efficiency and low-dark-count-rate single-photon detection. In a growing number of cases, large magnetic fields are being incorporated into quantum microscopes, nanophotonic devices, and sensors for nuclear and high-energy physics that rely on SNSPDs, but superconducting devices generally perform poorly in large magnetic fields. Here, we demonstrate robust performance of amorphous SNSPDs in magnetic fields of up to ±6 T with a negligible dark-count rate and unchanged quantum efficiency at typical bias currents. Critically, we also show that the SNSPD can be used as a magnetometer with a sensitivity of better than 100μT/√Hz and as a thermometer with a sensitivity of 20μK/√Hz at 1 K. Thus, a single-photon detector integrated into a quantum device can be used as a multifunctional quantum sensor capable of describing the temperature and magnetic field on chip simply by varying the bias current to change the operating modality from single-photon detection to thermometry or magnetometry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗

DOE OSTI2021

On-chip optical tweezers based on freeform optics

Since its advent in the 1970s, optical tweezers have been widely deployed as a preferred non-contact technique for manipulating microscale objects. On-chip integrated optical tweezers, which afford significant size, weight, and cost benefits, have been implemented, relying upon near-field evanescent waves. As a result, these tweezers are only capable of manipulation in near-surface regions and often demand high power since the evanescent interactions are relatively weak. We introduce on-chip optical tweezers based on freeform micro-optics, which comprise optical reflectors or refractive lenses integrated on waveguide end facets via two-photon polymerization. The freeform optical design offers unprecedented degrees of freedom to design optical fields with strong three-dimensional intensity gradients, useful for trapping and manipulating suspended particles in an integrated chip-scale platform. We demonstrate the design, fabrication, and measurement of both reflective and refractive micro-optical tweezers. The reflective tweezers feature a remarkably low trapping threshold power, and the refractive tweezers are particularly useful for multiparticle trapping and interparticle interaction analysis. Our integrated micro-optical tweezers uniquely combine a compact footprint, broadband operation, high trapping efficiency, and scalable integration with planar photonic circuits. This class of tweezers is promising for on-chip sensing, cell assembly, particle dynamics analysis, and ion trapping.

Yu, Shaoliang (ORCID:000000026072425X)↗

DOE OSTI2023

Scaling comb-driven resonator-based DWDM silicon photonic links to multi-Tb/s in the multi-FSR regime

The use of chip-based micro-resonator Kerr frequency combs in conjunction with dense wavelength-division multiplexing (DWDM) enables massively parallel intensity-modulated direct-detection data transmission with low energy consumption. Resonator-based modulators and filters used in such systems can limit the number of usable wavelength channels due to practical constraints on the maximum achievable free spectral range (FSR). In this work, we introduce the design of multi-Tb/s comb-driven resonator-based silicon photonic links by leveraging the multi-FSR regime. We demonstrate the viability of the link architecture with yield estimates that are supported by extensive wafer-scale measurements of 704 micro-resonators fabricated in a commercial complementary metal–oxide–semiconductor foundry. We show that a 2.80 Tb/s link is realizable with a ≥6 σ yield (∼99.999%), and that aggregate bandwidths of 3.76 Tb/s and 4.72 Tb/s are possible if yield targets are relaxed (3 σ and 1 σ , respectively). All designs represent a 1.94−3.28× boost to aggregate link bandwidth while maintaining BER≤10 −10 performance, with a theoretical bandwidth of 10.51 Tb/s being possible for sufficiently robust resonators. We use high-speed BER measurements to inform co-optimization of data rate and aggressor spacing ( λ ag ), limiting any additional loss-based power penalties to off-resonance insertion loss (IL) and routing loss. This work demonstrates that, through the multi-FSR regime, there is a clear path toward Kerr comb-driven ultra-broadband, high bandwidth silicon photonic links that can support next-generation data centers and high-performance computers.

James, Aneek (ORCID:0000000262527807)↗

DOE OSTI2020

Photonic integration for UV to IR applications

Photonic integration opens the potential to reduce size, power, and cost of applications normally relegated to table- and rack-sized systems. Today, a wide range of precision, high-end, ultra-sensitive, communication and computation, and measurement and scientific applications, including atomic clocks, quantum communications, processing, and high resolution spectroscopy, are ready to make the leap from the lab to the chip. However, many of these applications operate at wavelengths not accessible to the silicon on insulator-based silicon photonics integration platform due to absorption, power handling, unwanted nonlinearities, and other factors. Next generation photonic integration will require ultra-wideband photonic circuit platforms that scale from the ultraviolet to the infrared and that offer a rich set of linear and nonlinear circuit functions as well as low loss and high power handling capabilities. This article provides an assessment of the field in ultra-wideband photonic waveguides to bring power efficient, ultra-high performance systems to the chip-scale and enable compact transformative precision measurement, signal processing, computation, and communication techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Time-stamping and counting of single photons using fast camera

I will discuss fast optical cameras based on the back-illuminated silicon sensor and Timepix3 ASIC. The sensor has high quantum efficiency, and the chip provides nanosecond scale time resolution and data-driven readout with 80Mpix/sec bandwidth. The intensified version of the camera is single photon sensitive and since recently has been used for registration of single photons in a variety of quantum information science and quantum imaging experiments as well as for other applications. We briefly review the camera and describe recent experiments with a Hong-Ou-Mandel interferometer to characterize its photon counting capabilities.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2025

Frequency and time multiplexing for multiphoton state generation

One of the primary challenges with photonic quantum information processing is that single-photon states are created and heralded probabilistically, rather than being created on demand. One solution to this problem is multiplexing , which is attempting probabilistic generation of a single photon at multiple locations, times, or frequencies, and switching one successfully generated photon into an output mode. Motivated by the development of frequency-based photonic quantum information processing, we consider multiplexing using frequency and time as our options to use to get many photon generation opportunities. We devise an approach for generating multiphoton states, with photons populating multiple frequency modes in the same spatiotemporal mode. This method uses a variable-length optical delays to manipulate the temporal mode of the photons, and spaced fiber Bragg grating (FBG) reflectors to jointly manipulate the frequency and temporal modes of the photons. Experimental progress toward implementing this multiplexing scheme is proceeding along 2 fronts, each with different ways to achieve the variable-length optical delay. First, we will implement this scheme using a free-space optical quantum memory with multiple discretely adjustable free-space delays. For this implementation method, I calculate multiphoton generation rates, accounting for loss, that are realistically achievable with commercially available hardware. This work will appear in a theory paper, currently in preparation. Second, we will implement this multiplexing scheme in an integrated manner: the variable-length optical delay will happen on-chip using a long-lifetime Q-switchable Fabry-Perot cavity. The joint manipulation of the frequency and temporal modes of the photons will still happen off-chip in fiber with FBG reflectors. I report on experimental progress in constructing integrated Q-switchable Fabry-Perot cavities.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2023

Ultra-high Q alumina optical microresonators in the UV and blue bands

UV and visible photonics enable applications ranging from spectroscopic sensing to communication and quantum information processing. Photonics structures in these wavelength regimes, however, tend to experience higher loss than their IR counterpart. Particularly in the near-UV band, on-chip optical microresonators have not yet achieved a quality factor beyond 1 million. Here, we report ultra-low-loss photonic waveguides and resonators patterned from alumina thin films prepared by a highly scalable atomic layer deposition process. We demonstrate ultra high Q factor of 1.5×10 6 at 390 nm, a record value at UV bands, and 1.9×10 6 at 488.5 nm.

He, Chengxing (ORCID:0000000347166078)↗