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Presentation to be given on a virtual conference, December 3, 2020, High-Temperature Plasma Diagnostics. Conference: http://www.cvent.com/events/2020-high-temperatures-conference/event-summary-316fe078c3894ef5ab725d6bbdf69334.aspx
Cubic boron nitride (c-BN), with a small 1.4% lattice mismatch with diamond, presents a heterostructure with multiple opportunities for electronic device applications. However, the formation of c-BN/diamond heterostructures has been limited by the tendency to form hexagonal BN at the interface. In this study, c-BN has been deposited on free standing polycrystalline and single crystal boron-doped diamond substrates via electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD), employing fluorine chemistry. In situ x-ray photoelectron spectroscopy (XPS) is used to characterize the nucleation and growth of boron nitride (BN) films as a function of hydrogen gas flow rates during deposition. The PECVD growth rate of BN was found to increase with increased hydrogen gas flow. In the absence of hydrogen gas flow, the BN layer was reduced in thickness or etched. The XPS results show that an excess of hydrogen gas significantly increases the percent of sp2 bonding, characteristic of hexagonal BN (h-BN), particularly during initial layer growth. Reducing the hydrogen flow, such that hydrogen gas is the limiting reactant, minimizes the sp2 bonding during the nucleation of BN. TEM results indicate the partial coverage of the diamond with thin epitaxial islands of c-BN. The limited hydrogen reaction is found to be a favorable growth environment for c-BN on boron-doped diamond.
This report is one in a series of reports that describes research and development efforts in Japan in the area of display technologies. The following are included in this report: flat panel displays (technical findings, liquid crystal display development and production, large flat panel displays (FPD's), electroluminescent displays and plasma panels, infrastructure in Japan's FPD industry, market and projected sales, and new a-Si active matrix liquid crystal display (AMLCD) factory); materials for flat panel displays (liquid crystal materials, and light-emissive display materials); manufacturing and infrastructure of active matrix liquid crystal displays (manufacturing logistics and equipment); passive matrix liquid crystal displays (LCD basics, twisted nematics LCD's, supertwisted nematic LCD's, ferroelectric LCD's, and a comparison of passive matrix LCD technology); active matrix technology (basic active matrix technology, investment environment, amorphous silicon, polysilicon, and commercial products and prototypes); and projection displays (comparison of Japanese and U.S. display research, and technical evaluation of work).
Single crystal LaBGeO 5 architecture formed in La 2 O 3 -B 2 O 3 -2GeO 2 glass serves as a model system for understanding of the transformation from glass to single crystal under fs laser irradiation. This transformation is highly sensitive to glass composition, raising the need to understand how the glass structure and composition evolve during crystallization. In this work, micro X-ray absorption spectroscopy and X-ray fluorescence mapping were used to study the glass structure and composition preceding LaBGeO5 crystallization in the region surrounding the single crystal growth front. The results show precipitation of germanium nanoparticles, as well as anisotropic segregation of Ge and La prior to LaBGeO5 crystallization, which are explained assuming electromigration in high fields within the plasma formed by the fs laser irradiation. However, these nanoparticles do not serve as sites for heterogeneous nucleation. Furthermore, the similarity of local structure around Ge in the starting glass and the ultimate crystal appears to enhance the crystallization process.
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The solar corona, supernova remnants, the hot diffuse interstellar gas in the Galaxy, galactic halos, and the hot intracluster gas in rich clusters of galaxies, are examples of extended astrophysical plasmas which emit line-rich spectra in the X-ray spectral range from 1.5 to 25 A. These phenomena represent a significant fraction of the baryonic matter in the universe. The study of the composition, structure and dynamics of these astrophysical plasmas requires observations with both high spectral and spatial resolution simultaneously. The Objective Double Crystal Spectrometer, coupled with a grazing incidence X-ray telescope, represents a stigmatic instrument which is highly efficient for the study of such sources. We describe the configuration and performance (spatial resolution, spectral resolution and efficiency) of the Objective Double Crystal spectrometer.
The need for protective coatings on critical optical surfaces, such as halide crystal windows or lenses used in spectroscopy, has long been recognized. It has been demonstrated that thin, one micron, organic coatings produced by polymerization of flourinated monomers in low temperature gas discharge (plasma) exhibit very high degrees of moisture resistence, e.g., hundreds of hours protection for cesium iodide vs. minutes before degradation sets in for untreated surfaces. The index of refraction of these coatings is intermediate between that of the halide substrate and air, a condition for anti-reflection, another desirable property of optical coatings. Thus, the organic coatings not only offer protection, but improved transmittance as well. The polymer coating is non-absorbing over the range 0.4 to 40 microns with an exception at 8.0 microns, the expected absorption for C-F bonds.
Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN substrates. An AlGaN growth guideline map is developed, leading to pseudomorphic Al x Ga 1–x N epitaxial layers with x ~0.6–1.0 Al contents at a growth rate of ~0.3 μm/h. These epitaxial layers exhibit atomic steps, indicating step flow epitaxial growth, and room-temperature band edge emission from ~4.5 to 5.9 eV. Growth conditions are identified in which the background impurity concentrations of O, C, Si, and H in the MBE layers are found to be very near or below detection limits. An interesting Si segregation and gettering behavior is observed at the epitaxial AlGaN/AlN heterojunction with significant implications for the formation and transport of 2D electron or hole gases. Well-controlled intentional Si doping ranging from ~2 × 10 17 to 3 × 10 19 atoms/cm 3 is obtained, with sharp dopant density transition profiles. In Si-doped Al 0.6 Ga 0.4 N epilayers, a room-temperature free electron concentration of ~3 × 10 19 /cm 3 , an electron mobility of ~27 cm 2 /V s, and an n-type resistivity of ~7.5 m Ω cm are obtained. Here, the implications of these findings on electronic and photonic devices on single-crystal AlN substrates are discussed.
The significance of the fraction of the mass outgassed by a negatively charged space vehicle which is ionized within the vehicle plasma sheath and electrostatically reattracted to the space vehicle was determined. The ML-12 retarding potential analyzer/temperature controlled quartz crystal microbalances (RPA/TQCMs) distinguishes between charged and neutral molecules and investigates contamination mass transport mechanism. Two long term, quick look flight data sets indicate that on the average a significant fraction of mass arriving at one RPA/TQCM is ionized. It is assumed that vehicle frame charging during these periods was approximately uniformly distributed in degree and frequency. It is shown that electrostatic reattraction of ionized molecules is an important contamination mechanism at and near geosynchronous altitudes.
Elemental abundances of two flares observed with the SMM Flat Crystal Spectrometer are compared and contrasted. The first had a gradual rise and a slow decay, while the second was much more impulsive. Simultaneous spectra of seven bright soft X-ray resonance lines provide information over a broad temperature range and are available throughout both flares, making these events unique in the SMM data base. For the first flare, the plasma seemed to be characterized by coronal abundances but, for the second, the plasma composition could not be coronal, photospheric, or a linear combination of both. A good differential emission measure fit required enhanced neon such that Ne/O = 0.32 +/- 0.02, a value which is inconsistent with the current models of coronal abundances based on the elemental first-ionization potential. Similar values of enhanced neon are found for flaring plasma observed by the SMM gamma-ray spectrometer, in (He-3)-rich solar energetic particle events, and in the decay phase of several long duration soft X-ray events. Sulfur is also enhanced in the impulsive flare, but not as dramatically as neon. These events are compared with two models which attempt to explain the enhanced values of neon and sulfur.
This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.
A thermal spray process is being used to build up refractory metals and ceramics into a containment cartridge for high temperature, single crystal semiconductor growth experiments. This process uses high energy plasma inside a low pressure (100-200 torr) inert environment to apply layers of material onto a removable mandrel. A variety of materials are being characterized and evaluated against a demanding set of requirements, including high service temperature (1700 C), oxidation resistance, and resistance to liquid metal attack. Techniques to spray form refractory metals (tungsten, molybdenum, niobium, tantalum) and ceramics (alumina, boron nitride) are being developed in the Plasma Spray Cell at Marshall Space Flight Center. These plasma spray formed materials have been evaluated for mechanical properties, density, microstructure, and resistance to liquid metal attack. Forming techniques and the resultant mechanical and metallurgical properties will be presented.
A thermal spray process is being used to build up refractory metals and ceramics into a containment cartridge for high temperature, single crystal semiconductor growth experiments. This process uses high energy plasma inside a low pressure (100-200 torr) inert environment to apply layers of material onto a removable mandrel. A variety of materials are being characterized and evaluated against a demanding set of requirements, including high service temperature (1700 C), oxidation resistance, and resistance to liquid metal attack. Techniques to spray form refractory metals (tungsten, molybdenum, niobium, tantalum) and ceramics (alumina, boron nitride) are being developed in the Plasma Spray Cell at Marshall Space Flight Center. These plasma spray formed materials have been evaluated for mechanical properties, density, microstructure, and resistance to liquid metal attack. Forming techniques and the resultant mechanical and metallurgical properties are presented.
Here, in this study, we investigated the solid residual poly(vinyl alcohol) (PVA) and TiO 2 after nonthermal air, CO 2 , and N 2 plasma depolymerization in the absence and presence of TiO 2 . Scanning electron microscopy studies showed the absence of highly viscous tar and carbonaceous residues on the surfaces of PVA and TiO 2 . In the absence of TiO 2 , PVA particles exhibited micron-sized holes on their surfaces, whereas in the presence of TiO 2 , the surface roughness of PVA particles was observed at the submicron scale. These observations suggest that TiO 2 facilitates the even distribution of nonthermal plasma at a submicron scale, leading to a more uniform depolymerization of PVA surfaces. Raman, Fourier transform infrared spectroscopy, and X-ray absorption spectroscopy showed that (i) the surface of residual PVA contains mainly ketone functional groups and less C-H bonds than the pristine PVA and (ii) further confirmed the absence of highly viscous tar and carbonaceous residues on both used TiO 2 and residual PVA. The nuclear magnetic resonance and mass spectroscopy suggested that the PVA is growing back to poly polyvinyl acetate by the esterification reaction, and the ethers are produced by the acetal reaction between PVA and aldehyde. The transmission electron microscopy and X-ray diffraction analysis indicated no major crystal structural change of the TiO 2 catalyst after the plasma reactions. This study demonstrates that nonthermal plasma-assisted depolymerization is a viable alternative to thermal depolymerization, offering the unique advantage of converting polymer wastes into gaseous small organic molecules without generating recalcitrant viscous tar and carbonaceous residues on the surfaces of the polymer and TiO 2 catalysts.
During the past few years, the Orion high-resolution x-ray spectrometers have been successful tools for measuring x-ray spectra from plasmas generated in the Orion laser facility. Duplicate spectrometers also operate successfully at the Livermore EBIT-I and SuperEBIT electron beam ion traps for measuring x-ray polarization. We have recently implemented very high-quality, optically bonded, spherically bent quartz crystals to remove the structure in the x-ray image that had been observed in earlier measurements. The structure had been caused by focusing defects and limited the accuracy of our measurements. In this work, we present before and after images that show a drastic improvement. We, furthermore, have implemented a spherically bent potassium acid phthalate (KAP) crystal on one of our spectrometers. The KAP crystal was prepared in a similar fashion, and we present measurements of the N Ly-β and Ne Lyβ lines taken in first- and second-order reflections at 600 and 1200 eV, respectively. These measurements confirm that KAP crystals can be produced at a quality suitable for extending the spectral coverage to wavelengths longer than those accessible by different quartz crystals, especially those that cover the astrophysically important lines of iron.
X-ray line emission spectra can thoroughly characterize hot plasmas, especially when line shapes and ratios convey distinct aspects of plasma conditions. However, the high spectral resolution required for observing line shapes is often at odds with the large bandwidth required to observe many line ratios across a wide spectral range. One strategy to obtain high spectral resolution over a wide bandwidth is to use multiple crystals with calibrated reflectivity so that line intensities across different crystals can be compared. Here, we explore the use of a low-resolution, wide-bandwidth mica survey spectrometer to infer relative reflectivity of two high-resolution, narrow-bandwidth quartz crystals. Finally, a Monte Carlo error analysis determines comparable x-ray line ratios measured from both spectrometers, resulting in an in situ calibration factor and associated uncertainty for the relative reflectivity of the high-resolution crystals.
A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.
X-ray spectropolarimetry is a diagnostics technique suitable for measuring intense electron beams and strong magnetic fields in hot, dense plasmas. To increase the accuracy achievable, we investigated the possibility of measuring both orthogonal components of linear polarization simultaneously using a single crystal. We demonstrated experimentally for the first time that crystals with cubic symmetry can be used as polarizing beam splitters. We also found that the polarization-splitting planes in cubic crystals can be accessed in two crystal orientations, a property that can be used to decrease the clutter in polarized spectra. In parallel, we developed a ray-tracing code and are working to add the crystal reflectivity to instrument modeling codes, to help us interpret the spectra and to design spectroscopic and spectropolarimetric instruments. This work is motivated by the need to perform measurements of important quantities in difficult experimental conditions, such as the axial magnetic field at stagnation in magnetized liner inertial fusion loads.