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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Optimization of Photovoltaic Performance Through the Integration of Electrodynamic Dust Shield Layers

The viability of photovoltaics on the Lunar and Martian surfaces may be determined by their ability to withstand significant degradation in the Lunar and Martian environments. One of the greatest threats is posed by fine dust particles which are continually blown about the surfaces. In an effort to determine the extent of the threat, and to investigate some abatement strategies, a series of experiments were conducted outdoors and in the Moon and Mars environmental chamber at the Florida Solar Energy Center. Electrodynamic dust shield prototypes based on the electric curtain concept have been developed by our collaborators at the Kennedy Space Center [1]. These thin film layers can remove dust from surfaces and prevent dust accumulation. Several types of dust shields were designed, built and tested under high vacuum conditions and simulated lunar gravity to validate the technology for lunar exploration applications. Gallium arsenide, single crystal and polycrystalline silicon photovoltaic integrated devices were designed, built and tested under Moon and Mars environmental conditions as well as under ambient conditions. Photovoltaic efficiency measurements were performed on each individual cell with the following configurations; without an encapsulation layer, with a glass covering, and with various thin film dust shields. It was found that the PV efficiency of the hybrid systems was unaffected by these various thin film dust shields, proving that the optical transmission of light through the device is virtually uninhibited by these layers. The future goal of this project is to incorporate a photovoltaic cell as the power source for the electrodynamic dust shield system, and experimentally show the effective removal of dust obstructing any light incident on the cell, thus insuring power production is maximized over time.

Nason, Steven↗
NASA NTRS1982

Tribological properties of sintered polycrystalline and single crystal silicon carbide

Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

Miyoshi, K.↗
NASA NTRS1989

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Mahan, John E.↗
NASA NTRS1989

Laser damage threshold of diamond films

The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.

Albin, Sacharia↗
NASA NTRS2000

Mechanical, Chemical and Microstructural Characterization of Monazite-Coated Silicon Carbide Fibers

Tensile strengths of as-received Hi-Nicalon and Sylramic fibers and those having monazite surface coatings, deposited by atmospheric pressure chemical vapor deposition, were measured at room temperature and the Weibull statistical parameters determined. The average tensile strengths of uncoated Hi-Nicalon and Sylramic fibers were 3.19 +/- 0.73 and 2.78 +/- 0.53 GPa with a Weibull modulus of 5.41 and 5.52, respectively. The monazite-coated Hi-Nicalon and Sylramic fibers showed strength loss of approx. 10 and 15 percent, respectively, compared with the as-received fibers. The elemental compositions of the fibers and the coatings were analyzed using scanning Auger microprobe and energy dispersive X-ray spectroscopy. The LaPO4 coating on Hi-Nicalon fibers was approximately stoichiometric and about 50 nm thick. The coating on the Sylramic fibers extended to a depth of about 100 to 150 nm. The coating may have been stoichiometric LaPO4 in the first 30 to 40 nm of the layer. However, the surface roughness of Sylramic fiber made this profile somewhat difficult to interpret. Microstructural analyses of the fibers and the coatings were done by scanning electron microscopy, transmission electron microscopy, and selected area electron diffraction. Hi-Nicalon fiber consists of fine beta-SiC nanocrystals ranging in size from 1 to 30 mn embedded in an amorphous matrix. Sylramic is a polycrystalline stoichiometric silicon carbide fiber consisting of submicron beta-SiC crystallites ranging from 100 to 300 nm. Small amount of TiB2 nanocrystallites (approx. 50 nm) are also present. The LaPO4 coating on Hi-Nicalon fibers consisted of a chain of peanut shape particles having monazite-(La) structure. The coating on Sylramic fibers consisted of two layers. The inner layer was a chain of peanut shape particles having monazite-(La) structure. The outer layer was comprised of much smaller particles with a microcrystalline structure.

Bansal, N. P.↗
NASA NTRS1988

The single crystal elastic constants of hexagonal SiC to 1000 C

The relationships between the sound velocities in the cubic and hexagonal crystal structures and the tensor transformations for the two structures are applied to determine the elastic stiffnesses for the hexagonal structures of SiC to 1000 C. These results are then applied to calculate the polycrystalline elastic moduli, E and G, and their temperature variations. The calculated values for E and G at 20 C are 420 and 180 GPa; for (dE/dT) and (dG/dT), the values are -0.020 and -0.007 GPa/C, respectively.These agree well with published experimental values for E and G of dense polycrystalline alpha silicon carbides.

Li, Z.↗
NASA NTRS1989

Micromechanical stresses in SiC-reinforced Al2O3 composites

Applying an Eshelby (1957) approach, the internal micromechanical stresses within an SiC-inclusion-reinforced (platelet to whisker geometries) polycrystalline alumina matrix composite were calculated. The results are compared to the experimental residual stress measurements of a SiC-whisker-reinforced Al2O3 by Predecki, et al. (in press) and found to be in excellent agreement. The calculations are then extended to SiC-reinforced composites with polycrystalline mullite, silicon nitride, and cordierite matrices. It is concluded that the internal stresses are significantly influenced by the inclusion geometry as well as the thermoelastic differences between the inclusion and the matrix and also the volume fraction.

Li, Zhuang↗
NASA NTRS2005

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

Hepp, Aloysius F.↗
NASA NTRS1979

Industrialization study, phase 2

The potentials and requirements of advanced photovoltaic technologies still in their early developmental stages were evaluated and compared to the present day single crystal silicon wafer technology and to each other. The major areas of consideration include polycrystalline and amorphous silicon, single crystal and polycrystalline gallium arsenide, and single crystal and polycrystalline cadmium sulfide. A rank ordering of the advanced technologies is provided. The various ranking schemes were based upon present-day efficiency levels, their stability and long-term reliability prospects, material availability, capital investments both at the laboratory and production level, and associated variable costs. An estimate of the timing of the possible readiness of these advanced technologies for technology development programs and industrialization is presented along with a set of recommended government actions concerning the various advanced technologies.

Source record↗
NASA NTRS1984

Silicon film solar cell process

The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

Hall, R. B.↗
NASA NTRS1980

Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction

Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.

Miyoshi, K.↗
NASA NTRS1999

Continuous method of producing silicon carbide fibers

This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

Barnard, Thomas Duncan↗
NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗
NASA NTRS1984

Improved Silicon-Growth Chamber

Silicon-growth technique, based on coating ceramic substrates with thin layer of molten silicon solidifies to form polycrystalline film, modified to produce solar-cell quality silicon sheet.

Heaps, J. D.↗
NASA NTRS1984

Advances in large area polycrystalline solar cells

Polycrystaline silicon is presently routinely processed into low cost 10 cm by 10 cm solar cells. However assuming minimal handling difficulties, only minor equipment modifications and no increase in processing complexity, the fabrication of even larger geometries would be economically advantageous. This investigation addressed the feasibility of developing 10 cm by 15 cm solar cells from research through pilot line production stages. The major thrust was to minimize costing by using existing production equipment and proven techniques wherever possible. Accordingly methods were developed to section larger substrates from existing cast ingots, a simple solar cell was designed and low cost processes implemented. After numerous preliminary experiments, pilot line production of 1500 cells was completed. Of these approximately 62 percent exhibited efficiencies greater than 7.0 percent, 53 percent were greater than 8.0 percent and 15 percent were greater than 9.0 percent. Based on this study, the regular production of 10 cm by 15 cm solar cells was determined to be both feasible and cost effective using existing processing methods.

Vendura, G. J., Jr.↗