Search NASASearch

SEARCH · Search NASA

Results for “quantum yield”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Illuminating the mechanistic impacts of an Fe-quaterpyridine functionalized crystalline poly(triazine imide) semiconductor for photocatalytic CO 2 reduction

The strategy of incorporating earth-abundant catalytic centers into light-absorbing architectures is desirable from the viewpoint of low cost, low toxicity, and versatility for activating small molecules to produce solar-based fuels. Herein, we show that an Fe-quaterpyridine molecular catalyst can be anchored to a light-absorbing, crystalline, carbon nitride (PTI), to yield a molecular-catalyst/material hybrid, Fe-qpy-PTI, capable of facilitating CO 2 reduction to CO selectively (up to ∼97–98%) in aqueous solution under low-intensity light irradiation. This hybrid material leverages the ability of the Fe-qpy catalyst to bind CO 2 upon a one-electron reduction, as achieved by transfer of excited electrons from the carbon-nitride semiconductor. At a low incident power density of only 50 mW cm −2 , the catalytic activity of the hybrid material was measured across a range of catalyst loadings from 0.1–3.8 wt%, yielding CO rates of up to 596 μmol g −1 h −1 for a 3.8 wt% loading during a 3 h experiment. Over the course of 8 h, the hybrid material attained a CO evolution rate of 608 μmol g −1 h −1 and 305 turnovers for a TOF of ∼38 h −1 and an apparent quantum yield of 2.6%. Higher light intensities provided an initial increase in activity but negatively impacted photocatalytic rates with time, with an AQY of 0.6% at 150 mW cm −2 and 0.4% at 250 mW cm −2 . Transient absorption spectroscopy results showed electron survival probabilities consistent with the trends in observed product rates. Computational modeling was also used to evaluate and understand the mechanistic pathway of the high product selectivity for CO versus H 2 . These results thus help unveil key factors for leveraging the mechanistic understanding of molecular catalysts for CO 2 reduction for pairing with light absorbing semiconductors and establishing optimal conditions to attain maximal rates in aqueous solution.

McGuigan, Scott [Baylor University, Waco, TX (Unit

Fluorescence yields from photodissociative excitation of HCOOH, HCOOCH3, and CH3COOH in the vacuum-ultraviolet region

The photoexcitation processes of HCOOH, HCOOCH3, and CH3COOH were studied in the vacuum-ultraviolet region by using synchroton radiation and a pulsed discharge lamp as light sources. The absorption and fluorescence cross sections of these molecules were measured in the 106-250-nm region. Fluorescences were detected from photoexcitation of HCOOH and HCOOCH3, but not from CH3COOH. Fluorescence produced at 123.9 nm was dispersed and identified as the excited OH and HCOO radicals. Fluorescence quantum yields of HCOOH and HCOOCH3 increase with decreasing excitation wavelengths with maxima of 5 and 0.3 percent at 106 nm, respectively.

Suto, Masako

Understanding and Controlling the Formation of Nonradiative Defects in Blue Organic Triplet Emitters

Phosphorescent organic light-emitting devices (PHOLEDs) suffer from destructive molecular processes due to triplet-polaron and triplet-triplet annihilation. These processes are energetically driven and hence are particularly active in decreasing the lifetime of blue PHOLEDs. It has recently been shown that increasing triplet radiative rates via the Purcell effect effectively extends the device operational lifetime by reducing the triplet radiative lifetime, thus decreasing their density and the probability of triplet-annihilation reactions. We provide an analytical framework using Marcus theory to explain the observed, approximately exponential relationship between exciton energy and device lifetime. From transient drift-diffusion dynamics, we show that the Purcell effect reduces the exciton density in the steady state and increases the photoluminescent yield, thereby reducing defect generation rates and extending the device lifetime. We control the radiative rate of excitons in microcavities, thereby connecting the exciton energy and decay rates with the observed device lifetime. The device lifetime is shown to follow a power-law dependence on the Purcell factor ( PF m ) with m = 1.5 to 2.5, dependent on the TTA-to-TPA ratio and photoluminescence quantum yield. From our analysis, a fivefold increase in PF has the potential to extend the blue PHOLED lifetime by up to 2 orders of magnitude, making the blue PHOLED lifetime comparable to that of state-of-the-art green PHOLEDs. Published by the American Physical Society 2024

Zhao, Haonan (ORCID:0000000190584422)

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Elabd, H.

Dual interfacial H-bonding-enhanced deep-blue hybrid copper–iodide LEDs

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids are a compelling solution for efficient and stable deep-blue lighting, owing to their tunability, high photoluminescence efficiency and environmental sustainability. Here we present a hybrid copper–iodide that shows near-unity photoluminescence quantum yield (99.6%) with an emission wavelength of 449 nm and colour coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. Here, we use the thin film of this hybrid as the sole active emissive layer to fabricate deep-blue light-emitting diodes and subsequently enhance the device performance through a dual interfacial hydrogen-bond passivation strategy. This synergetic surface modification approach, integrating a hydrogen-bond-acceptor self-assembled monolayer with an ultrathin polymethyl methacrylate capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid emissive layer and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, a maximum luminance of 3,970.30 cd m −2 with colour coordinates (0.147, 0.091) and an excellent operational stability (half-lifetime) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm 2 that maintains high efficiency. Our findings reveal the potential of copper–iodide-based hybrid materials for applications in solid-state lighting and display technologies, offering a versatile strategy for enhancing device performances.

14 SOLAR ENERGY

Photodissociation yields of CS2 at 1060-1520 A

Photoabsorption and fluorescence cross sections of CS2 were measured in the 1060-1520 A region using synchrotron radiation in order to provide information needed for modeling the CS abundance in the interstellar medium. The absorption in the 1060-1200 A region is smooth and continuous, except for the presence of a strong absorption band at 1117 A, while for wavelengths longer than 1200 A, the absorption spectrum shows the structure of Rydberg states. The fluorescence in the 1900-3000 A region begins to appear at 1335 A, and is mainly the CS(A 1Pi-Chi 1Sigma +) transition in the 2400-2800 A region. The fluorescence in the 1900-8000 A region begins to appear at 1490 A, and, in addition to the previous transition, is composed of the transitions of S(1S0-3P1) at 4589 A and of CS(d 3 Delta, a-prime 3Sigma +, and a 3Pi-Chi 1Sigma +) at 3000-4000 A. The quantum yields for the production of fluorescence are determined to have maxima of 13 and 7.5% at 1235 A for the fluorescence in the 1900-8000 and 1900-3000 A regions, respectively.

Day, R. L.

Multiple Carrier Generation at an Exceptionally Low Energy Threshold

Multiple carrier generation (MCG), a process wherein two or more carriers are generated from a single high-energy absorbed photon, holds immense promise for quantum sensing, metrology, low-threshold lasers, and photovoltaics. Despite its potential, MCG has faced obstacles such as low efficiency and a high threshold photon energy at least twice the band gap (2?Eg) of the semiconductor, limiting its application only to a class of materials with low Eg. Here, we present a new approach that overcomes this limitation by leveraging carrier-donor scattering to excite secondary electrons from donor states strategically positioned below the conduction band. Our method relies on strong Coulomb interaction, reduced dielectric screening, slow hot carrier cooling, and strictly follows the energy conservation rules. We experimentally demonstrated this idea in a model system of monolayer (1L) MoS2 by exploiting electron-donating chalcogen vacancy states. We observed an exceptionally low MCG threshold of ~1.12?Eg for the first time in 1L MoS2. Remarkably, the quantum yield can be further increased to >3 by increasing the photon energy to 1.65?Eg, representing a substantial advancement over existing methods. Our findings extend the horizon of MCG into next-generation high-performance optoelectronic devices with an on-demand operating spectral range spanning from infrared to ultraviolet.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Expanding Parameter Space to Enable Low-Temperature Synthesis of Crystalline Indium Phosphide Quantum Dots

Established methods to synthesize indium phosphide quantum dots (QDs) require high temperatures (>180 °C) to make high-quality material for optoelectronic applications. Nonpolar solvent environments are overwhelmingly used in InP QD synthesis to reach the necessary high temperatures and for compatibility with the reactive precursors. In this study, we explored InP QD synthesis in polar aprotic solvent environments to dramatically decrease the temperature required for InP crystallization by imparting ionicity to the precursors and stabilizing charged reaction intermediates. A custom air-free 96- well plate setup was employed to identify key factors impacting low-temperature QD formation, including an increased percentage of polar solvent, carboxylic acid choice, and inclusion of polar additives. Guided by these insights, we developed a synthesis of crystalline, green-emitting InP QDs at 60 °C in a toluene-dimethylformamide mixture. Here's, the QDs withstood established Zn 2+ and HF surface treatments, which increased the photoluminescence quantum yield to 25%. Additionally, we demonstrated the rapid synthesis of quasi-wurtzite InP QDs at room temperature in a polar solvent environment using an acid-free indium myristate precursor.

absorption

Pressure-Modulated Energy Transfer Dynamics in Mn 2+ -Doped CdS/ZnS Core/Shell Quantum Dots

Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.

36 MATERIALS SCIENCE

Variable Surface Termination and Ligand Passivation of Lead Sulfide Nanocrystals Synthesized with Excess Lead Chloride

The surface termination and ligand passivation of semiconducting nanocrystals (NCs) impact the stability, optical properties, and self-assembly of NCs. In this work, we definitively characterize the surface of lead sulfide (PbS) NCs synthesized from excess PbCl 2 . With a combination of small-angle neutron scattering (SANS), photoluminescence, and 1D and 2D NMR experiments, we show that the surface termination of PbS NCs depends on the presence of PbCl 2 during ligand exchange. When excess PbCl 2 is removed prior to ligand exchange, PbS[RNH 3 + Cl – ] NCs are obtained, which are terminated by a monolayer of PbCl x on the {100} PbS facet and passivated by oleylammonium chloride ligands. On the other hand, when excess PbCl 2 remains in solution during ligand exchange, lead oleate forms and attaches to the {111} PbS facets of PbS[RNH 3 + Cl – ] NCs, creating PbS@PbCl x NCs. PbS@PbCl x NCs are coated in an epitaxial layer of PbCl x on both the {100} PbS and {111} PbS facets, making them 0.3–0.4 nm larger on average than PbS[RNH 3 + Cl – ] NCs with identical absorption wavelengths. Additionally, PbS@PbCl x NCs have a consistently higher photoluminescence quantum yield and longer photoluminescence lifetimes than PbS[RNH 3 + Cl – ] NCs. This study clarifies the surface structure of PbS NCs synthesized from excess PbCl 2 , highlighting ligand exchange strategies and reconciling observations from across the literature.

Anions

Design of Zn Chalcogenide Shells for Emissive Ga-Rich In 1– X Ga X As Quantum Dots Synthesized in Molten Salts

Colloidal quantum dots (QDs) have seen expanded applications in optoelectronics from visible to near-infrared (NIR) wavelengths. However, the options for QDs with bright and size-tunable emission in the NIR region are mostly limited to heavy-metal-based (Pb, Cd, Hg) semiconductors. Here, Ga-rich In 1–X Ga X As QDs with zinc chalcogenide shells are demonstrated as candidates for NIR emitters. Based on new developments in inorganic molten salt chemistry, we synthesized colloidal In 1–X Ga X As QDs containing up to 85% gallium with high crystallinity based on Raman and XRD analyses. Zinc selenide and sulfide shells with different morphologies were grown on In 1–X Ga X As QDs by controlling the Zn precursor chemistry. Despite the nominally reduced lattice mismatch in the In 1–X Ga X As/ZnSe heterostructure, a ZnS shell was found to be a much more effective passivation material: In 1–X Ga X As/ZnS core–shell QDs show a photoluminescence quantum yield (PL QY) of about 30% versus 11% for ZnSe shells. In conclusion, based on the analysis of PL decay and transient absorption (TA) dynamics, we surmise that electron trapping is the major reason for efficiency loss, providing a clear heterostructure design principle for realizing efficient NIR-emitting In 1–X Ga X As QDs.

Electron trapping

Revealing the Influence of Binding Motifs on Electron Transfer and Recombination Kinetics for CdSe Quantum Dots Functionalized with a Modified Viologen

Anchoring of molecules to the surfaces of semiconductor nanocrystals (NCs) presents an opportunity to leverage the precise synthetic tunability of molecular function and the remarkable light harvesting properties of NCs to drive photochemical reactions. However, charge transfer between the two species depends not only on the energy level alignments but also on the details of their binding interactions, which are difficult to probe. Here, in this work, we characterize the binding between CdSe quantum dots (QDs) and a new phosphonated derivative of the electron acceptor methyl viologen, designed to attach to the QD surface via the phosphonate group. We use isothermal titration calorimetry to probe the thermodynamics of the QD–molecule interaction and use the parameters determined therein to analyze transient absorption spectroscopy measurements of forward and back electron transfer from QDs to the viologen. We find that the ligand-like phosphonate binding leads to an electron-transfer rate constant that is 3 orders of magnitude smaller than that for the face-on binding of the bipyridine ring of methyl viologen. Back electron transfer is also significantly slower in the derivative. Interestingly, a minor fraction of the phosphonated derivative also binds in the face-on configuration, with similar forward and back electron transfer kinetics as methyl viologen. Numerical simulations show that the ligand-like binding will lead to significantly improved quantum yields of photocatalysis over a wide range of reaction rates. By independently characterizing binding thermodynamics and charge transfer kinetics, this work reveals how the complexities underlying electron transfer at the NC–molecule interface determine photocatalytic outcomes. This work also represents a step toward controlling forward and back electron transfer kinetics via rational molecular design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Strong NIR II Chiroptical Response and Magnetic Anisotropy via Modular Installation of Chiral Capping Ligands on a Light-Emitting Diradicaloid Scaffold

Low-energy molecular lumiphores have seen increased interest due to potential imaging and communications applications. Specifically, molecules that emit in the near-infrared (NIR, 700–1700 nm) or telecom (∼1260–1625 nm) regions, where attenuation is minimized in biological tissue and optical fibers, respectively, can drastically improve image resolution and depth penetration; however, bright low-energy emission is rare due to exponentially decreasing quantum yields in this region. Chiral molecules exhibiting strong NIR or telecom absorption/emission would be of particular interest due to advanced security and spintronics applications, but these compounds remain scarce and are currently restricted to lanthanide or nanoparticle-based systems. Here, we report the synthesis of a chiral organic-based NIR emitter, enabled by simple peripheral installation of chiral capping ligands. These ligands twist the achiral NIR-emissive core, breaking inversion symmetry. Furthermore, this twisting enables strong chiroptical responses observed via static and transient circular dichroism and increased magnetic anisotropy through electron paramagnetic resonance (EPR) measurements, establishing this strategy as a promising method for the development of new chiral emitters and sensors.

Electron paramagnetic resonance spectroscopy

Bound Exciton Complexes in Near-Infrared Emitting Quantum Shells

Near-infrared (NIR) light sources based on colloidal semiconductor nanocrystals (NCs) represent a scalable, low-cost alternative to epitaxial semiconductor platforms. However, their performance remains hindered by rapid Auger recombination, a problem that is particularly pronounced in narrow-bandgap materials. Here, we report on CdS/HgS/CdS and CdS/HgCdSe/ ZnS quantum shells (QSs), a class of spherical quantum wells specifically engineered for a suppression of nonradiative Auger processes. Fabricated QSs exhibit tunable NIR emission with photoluminescence quantum yields reaching ∼60% below 1000 nm and up to 30% near 1300 nm. Optical gain and stimulated emission were observed in CdS/HgS/CdS QSs. In contrast, CdS/HgCdSe/ZnS QSs displayed a photoinduced absorption in lieu of optical gain despite demonstrating a comparatively stronger Auger suppression. Transient absorption spectroscopy revealed that this phenomenon arises from the formation of bound multiexciton complexes that induce long-lived sub-bandgap multiexciton states. The observation of such bound excitonic clusters at room temperature offers a pathway toward nonlinear NIR photonic phenomena, including biexciton−exciton cascade emission, optical modulation, and singleexciton gain.

Auger recombination

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie

Colloidal Synthesis of Palladium Nanocluster‐Decorated Cs 3 Sb 2 Cl 9 Perovskite Heterostructural Nanorods for Enhanced CO 2 Photoreduction

Developing efficient and sustainable photocatalysts for CO 2 reduction remains a significant challenge, particularly with environmentally benign materials. Here, in this study, we report the first one-step synthesis of metal–lead-free perovskite heterostructural nanocrystals by decorating Cs 3 Sb 2 Cl 9 perovskite nanorods with size-controlled Pd nanoclusters via a one-step hot-injection method. The resulting Pd-Cs 3 Sb 2 Cl 9 heteronanorods (HNRs) exhibit strong interfacial electronic coupling, enhanced charge separation, and excellent colloidal stability. Transient absorption spectroscopy and DFT calculations reveal a built-in electric field that drives directional electron transfer from the perovskite host to the Pd domains. Under UV irradiation, the Pd-Cs 3 Sb 2 Cl 9 HNRs demonstrate excellent CO 2 photoreduction activity with high CH 4 selectivity, achieving a record apparent quantum yield (AQY) of 2.62% among halide perovskite nanocrystal-based systems with a large electronic yield of 689.3 ± 12.2 µmol·g cat −1 . In situ spectroscopic monitoring and Gibbs free energy analysis further unveil a Pd-facilitated reaction pathway involving stabilization of key intermediates. This work introduces a new class of lead-free perovskite-based heterostructures through a facile one-step synthesis strategy and offers a new design principle for next-generation photocatalysts for solar fuel production.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI

Ligand‐Induced Crystallization Control in MAPbBr 3 Hybrid Perovskites for High Quality Nanostructured Films

AbstractControlling the formation of hybrid perovskite thin films is crucial in obtaining high‐performance optoelectronic devices, since factors like morphology and film thickness have a profound impact on a film's functionality. For light‐emitting applications grain sizes in the sub‐micrometer‐range have previously shown enhanced brightness. It is therefore crucial to develop simple, yet reliable methods to produce such films. Here, a solution‐based synthesis protocol for the on‐substrate formation of MAPbBr3 (MA = methylammonium) nanostructures by adding the bifunctional rac‐3‐aminobutyric acid to the precursor solution is reported. This synthesis route improves key optical properties such as photoluminescence quantum yields and life times of excited states by inducing a controlled slow‐down of the film formation and suppressing agglomeration effects. In situ spectroscopy reveals a delayed and slowed down crystallization process, which achieves synthesis of perovskite structures with much reduced defect densities. Further, aggregation can be controlled by the amount of amino acid added and adjusting the synthesis protocol allows to produce cubic crystallites with targeted size from nanometer to micrometer scales. The nanocrystalline MAPbBr3 samples show enhanced amplified spontaneous emission (ASE) intensities, reduced ASE thresholds and purer ASE signals, compared to pristine films, even under intense optical driving, making them promising structures for lasing applications.

36 MATERIALS SCIENCE

Experimental Evidence of Free Carrier Generation in 2D Hybrid Organic–Inorganic Perovskites

Despite the significant potential of 2D hybrid organic–inorganic perovskites (2DHOIPs) for high-efficiency optoelectronics application-comparable to their 3D counterparts, the fundamental carrier photogeneration remains unclear. In contrast to conventional ultrafast optical property characterization, we use ultrafast photocurrent spectroscopy to investigate the early-time electrical properties of type-I and type-II 2DHOIPs by manipulating the quantum confinement and the dielectric quantum matching effect. We discovered that the high frequency dielectric quantum matching effect plays a major role in 2DHOIPs, demonstrated by their high carrier mobility (µ), near-unity photogeneration quantum yield (Φ), below-room temperature exciton binding energy (E b ), and approaching 3D space factor (DSF). Our work shows that the optoelectronic performances of 2DHOIPs are comparable to their counterparts of 3DHOIPs.

2D perovskite