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Radiation Hardness of Polycrystalline Ceramic Scintillators for Radioisotope Batteries
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Inorganic ternary halide semiconductors for hard radiation detection
Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.
Radiation Hard, High-Bandwidth Optical Fiber Links for Detectors at High Energy Colliders
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Large-area Radiation-hard Synchrotron X-ray Detectors
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Radiation Hard High Speed Camera System for Accelerator Beam Diagnostics
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An Ultra-Fast, Radiation Hard, X-ray Imager for Advanced Laser Diagnostics Final Technical Report
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Radiation hardness of GaN vacuum nanodiodes
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Quantitative analysis of flare accelerated electrons through their hard X-ray and microwave radiation
Hard X-ray and microwave modelling that takes into account the temporal evolution of the electron spectrum as well as the inhomogeneity of the magnetic field and the ambient medium in the radio source is presented. This method is illustrated for the June 29 1980 10:41 UT event. The implication on the process of acceleration/injection is discussed.
Statistical Model Selection for TID Hardness Assurance
Radiation Hardness Assurance (RHA) methodologies against Total Ionizing Dose (TID) degradation impose rigorous statistical treatments for data from a part's Radiation Lot Acceptance Test (RLAT) and/or its historical performance. However, no similar methods exist for using "similarity" data - that is, data for similar parts fabricated in the same process as the part under qualification. This is despite the greater difficulty and potential risk in interpreting of similarity data. In this work, we develop methods to disentangle part-to-part, lot-to-lot and part-type-to-part-type variation. The methods we develop apply not just for qualification decisions, but also for quality control and detection of process changes and other "out-of-family" behavior. We begin by discussing the data used in ·the study and the challenges of developing a statistic providing a meaningful measure of degradation across multiple part types, each with its own performance specifications. We then develop analysis techniques and apply them to the different data sets.
Radiation hardened PMOS process with ion implanted threshold adjust
By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted
Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes
Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.
In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs
Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.
CMOS active pixel sensor specific performance effects on star tracker/imager position accuracy
This paper gives the status of theoretical and experimental efforts at JPL in the development of environmentally robust (radiation hard and radiation tolerant), ultra-low power, high performance CMOS active pixel sensor (APS) imagers for star tracker/imager applications.
Radiation-resilient InAs quantum dot lasers
Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.
Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors
Herein we discuss lithium indium diselenide (LISe) as a semiconductor that holds promise for neutron imaging sensor technologies because of its high neutron absorption efficiency and its corresponding ability to discriminate between gamma rays and neutrons. However, being a semiconductor, LISe may not be sufficiently radiation hard for practical application in radiation hard environments. Therefore, a systematic evaluation of the changes in material and electronic properties of LISe after high neutron fluence exposures is investigated. Herein, the characterization methods are utilized which included UV–vis, X-ray diffraction, radioluminescence, Raman, fourier transform infrared spectroscopy (FTIR), current–voltage, and neutron sensing. Characteristics of LISe material that appeared in the literature are identified herein along with several that are expected to appear based on theoretical analyses. The results obtained show clear changes in the material properties of LISe after neutron exposure up to a fluence of 10 16 n cm -2 . However, LISe is still able to sense neutrons above the background at 10 16 n cm -2 , suggesting that LISe may be suitable for use in neutron imaging sensors at neutron imaging facilities.
Curve Fitting Solar Cell Degradation Due to Hard Particle Radiation
This paper investigates the suitability of the equation for accurately defining solar cell parameter degradation as a function of hard particle radiation. Y = Y/sub o/ + C/sub 1/ * Log(1 + /spl phi///spl phi//sub x/) + C/sub 2/ * Log(1 + /spl phi///spl phi//sub y/) The paper also provides methods for determining the constants in the equation and compares results from this equation to those obtained by the more traditionally used. Y = /spl Sigma/(a/sub i/ * [In(/spl phi/)]/sup i/)
Electronics for the far-forward CMS muon detector upgrade, ME0
Abstract With the High Luminosity upgrade of the Large Hadron Collider (LHC) we expect increased instantaneous luminosities up to 7.5 × 10 34 cm −2 s −1 , or five times more than the original values. In order to maintain performance of the Compact Muon Solenoid (CMS) experiment under these conditions, ME0 is one of three new muon sub-detectors being added, along with GE1/1 and GE2/1, which use the triple Gas Electron Multiplier (GEM) technology. ME0 is designed to cover the forward region of 2.0 < | η | < 2.8, thus improving muon reconstruction at high background rates by supplementing other overlapping muon subsystems up to | η | = 2.4, while also extending the acceptance for the first time to | η | = 2.8. The readout electronics for ME0 must be designed to accommodate high data rates and be sufficiently radiation hard to operate close to the beamline. The Optohybrid (OH) board for ME0, which reads out data from the front-end VFAT3b ASICs, has therefore been designed to operate without an FPGA (unlike GE1/1 and GE2/1) to ensure radiation hardness. The ME0 OH uses the radiation-hard CERN-designed lpGBT ASIC and VTRx+ optical transceiver module for high bandwidth optical links up to 10.24 Gb/s. The backend system is based on the ATCA standard. The design and development status of the readout electronics for ME0 is presented, along with recent results from integration tests performed using the first prototypes.