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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

MEMS-Based Piezoelectric/Electrostatic Inchworm Actuator

A proposed inchworm actuator, to be designed and fabricated according to the principles of microelectromechanical systems (MEMS), would effect linear motion characterized by steps as small as nanometers and an overall range of travel of hundreds of microns. Potential applications for actuators like this one include precise positioning of optical components and active suppression of noise and vibration in scientific instruments, conveyance of wafers in the semiconductor industry, precise positioning for machine tools, and positioning and actuation of micro-surgical instruments. The inchworm motion would be generated by a combination of piezoelectric driving and electrostatic clamping. The actuator (see figure), would include a pair of holders (used for electrostatic clamping), a slider (the part that would engage in the desired linear motion), a driver, a piezoelectric stack under the driver, and a pair of polymer beams centrally clamped to the flexure beam via a T bar. The holders would be held stationary. One end of the piezoelectric stack would be held stationary; the other end would be connected to the bottom of the driver, which would be free to move up and down. All of these components except the piezoelectric stack and the polymer beams would be micromachined from a 500- m-thick silicon wafer by deep reactive-ion etching. The inchworm motion would be perpendicular to the broad faces of the wafer (perpendicular to the plane of the figure). The combination of the polymer beams and the centrally clamped flexure beam would spring-bias the slider into a position such that, in the absence of electrostatic clamping, the gap between the slider on the one hand and both the driver and the holder on the other hand would be no more than a few microns. This arrangement would make it possible to electrostatically pull the slider into contact with either the holders or the driver at a clamping force of the order of 1 N by applying a reasonably small voltage (of the order of 100 V).

Yang, Eui-Hyeok↗
NASA NTRS2013

High Contrast Internal and External Coronagraph Masks Produced by Various Techniques

Masks for high contrast internal and external coronagraphic imaging require a variety of masks depending on different architectures to suppress star light. Various fabrication technologies are required to address a wide range of needs including gradient amplitude transmission, tunable phase profiles, ultra-low reflectivity, precise small scale features, and low-chromaticity. We present the approaches employed at JPL to produce pupil plane and image plane coronagraph masks, and lab-scale external occulter type masks by various techniques including electron beam, ion beam, deep reactive ion etching, and black silicon technologies with illustrative examples of each. Further development is in progress to produce circular masks of various kinds for obscured aperture telescopes.

Phase Induced Amplitude Apodization Complex Mask C↗
NASA NTRS2013

Silicon Micromachining for Terahertz Component Development

Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

Filter↗
NASA NTRS2010

The JWST/NIRCam Coronagraph Flight Occulters

The NIRCam instrument on the James Webb Space Telescope will have a Lyot coronagraph for high contrast imaging of extrasolar planets and circumstellar disks at lambda = 2 - 5 micrometers. Half-tone patterns are used to create graded-transmission image plane masks. These are generated using electron beam lithography and reactive ion etching of a metal layer on an antireflection coated sapphire substrate. We report here on the manufacture and evaluation of the flight occulters.

extrasolar planets↗
NASA NTRS2015

Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

Ai, Jun↗
NASA NTRS2015

Exoplanet Coronagraph Shaped Pupil Masks and Laboratory Scale Star Shade Masks: Design, Fabrication and Characterization

Star light suppression technologies to find and characterize faint exoplanets include internal coronagraph instruments as well as external star shade occulters. Currently, the NASA WFIRST-AFTA mission study includes an internal coronagraph instrument to find and characterize exoplanets. Various types of masks could be employed to suppress the host star light to about 10 -9 level contrast over a broad spectrum to enable the coronagraph mission objectives. Such masks for high contrast internal coronagraphic imaging require various fabrication technologies to meet a wide range of specifications, including precise shapes, micron scale island features, ultra-low reflectivity regions, uniformity, wave front quality, achromaticity, etc. We present the approaches employed at JPL to produce pupil plane and image plane coronagraph masks by combining electron beam, deep reactive ion etching, and black silicon technologies with illustrative examples of each, highlighting milestone accomplishments from the High Contrast Imaging Testbed (HCIT) at JPL and from the High Contrast Imaging Lab (HCIL) at Princeton University. We also present briefly the technologies applied to fabricate laboratory scale star shade masks.

black silicon↗
NASA NTRS2016

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. 

superconductor↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS2017

Interconnect and Packaging Technologies for Terahertz Communication Systems

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Micromachining↗
NASA NTRS1999

160-190 GHz Monolithic Low Noise Amplifiers

This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.

low↗
DOE OSTI2022

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Zhao, Yuji↗
DOE OSTI2023

High absorption photovoltaic material and methods of making the same

A high absorption photovoltaic material and method of making the material for use in a solar cell are disclosed. The photovoltaic material includes a surface modified with a layer of repeating photonic crystal structures. The photonic crystal structures are approximately inverse conically shaped and have a curved sidewall that has an approximately Gaussian shape. The photonic crystal structures generally have a high vertical depth and sidewall angle. The structures also have a gradient refractive index profile and exhibit the parallel-to-interface refraction light trapping effect. An anti-reflective coating is disposed over the photonic crystal structure layer. The photovoltaic material exhibits near unity light absorption over a broad range of visible and near infrared wavelengths and incidence angles, even at reduced thicknesses. The photovoltaic structures are formed via a combined photolithography and reactive-ion etching method at low power with a gas mixture having a high ratio of an etchant component to a passivation component.

Kuang, Ping↗
DOE OSTI2020

Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

In this work, we demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into highperformance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a lowtemperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO 2 , with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2006

Fabrication and Characteristics of Free Standing Shaped Pupil Masks for TPF-Coronagraph

Direct imaging and characterization of exo-solar terrestrial planets require coronagraphic instruments capable of suppressing star light to 10-10. Pupil shaping masks have been proposed and designed1 at Princeton University to accomplish such a goal. Based on Princeton designs, free standing (without a substrate) silicon masks have been fabricated with lithographic and deep etching techniques. In this paper, we discuss the fabrication of such masks and present their physical and optical characteristics in relevance to their performance over the visible to near IR bandwidth.

terrestrial planet finder↗
NASA NTRS2013

Compact Focal Plane Assembly for Planetary Science

A compact radiometric focal plane assembly (FPA) has been designed in which the filters are individually co-registered over compact thermopile pixels. This allows for construction of an ultralightweight and compact radiometric instrument. The FPA also incorporates micromachined baffles in order to mitigate crosstalk and low-pass filter windows in order to eliminate high-frequency radiation. Compact metal mesh bandpass filters were fabricated for the far infrared (FIR) spectral range (17 to 100 microns), a game-changing technology for future planetary FIR instruments. This fabrication approach allows the dimensions of individual metal mesh filters to be tailored with better than 10- micron precision. In contrast, conventional compact filters employed in recent missions and in near-term instruments consist of large filter sheets manually cut into much smaller pieces, which is a much less precise and much more labor-intensive, expensive, and difficult process. Filter performance was validated by integrating them with thermopile arrays. Demonstration of the FPA will require the integration of two technologies. The first technology is compact, lightweight, robust against cryogenic thermal cycling, and radiation-hard micromachined bandpass filters. They consist of a copper mesh supported on a deep reactive ion-etched silicon frame. This design architecture is advantageous when constructing a lightweight and compact instrument because (1) the frame acts like a jig and facilitates filter integration with the FPA, (2) the frame can be designed so as to maximize the FPA field of view, (3) the frame can be simultaneously used as a baffle for mitigating crosstalk, and (4) micron-scale alignment features can be patterned so as to permit high-precision filter stacking and, consequently, increase the filter bandwidth and sharpen the out-of-band rolloff. The second technology consists of leveraging, from another project, compact and lightweight Bi0.87Sb0.13/Sb arrayed thermopiles. These detectors consist of 30-layer thermopiles deposited in series upon a silicon nitride membrane. At 300 K, the thermopile arrays are highly linear over many orders of magnitude of incident IR power, and have a reported specific detectivity that exceeds the requirements imposed on future mission concepts. The bandpass filter array board is integrated with a thermopile array board by mounting both boards on a machined aluminum jig.

Brown, Ari↗
NASA NTRS2016

Electrospray Thruster Performance with Microfabricated Emitter Arrays and Indium Propellant

The feasibility of a microfabricated indium-fueled electrospray thruster with excellent performance was demonstrated. High efficiency electrospray thrusters with microfabricated components are under development for very compact, distributable propulsion systems that can be employed on both very small and large spacecraft with 10X improvement over SOA in mass, volume and specific impulse The critical components of this technology are the microfabricated emitter arrays and the capillary force driven indium feed system. Grey scale electron-beam lithography patterning and reactive ion dry etching provided the required micron-scale etch precision and uniformity across an array of 400 emitters in 1 cm2. Initial tests of single microfabricated silicon emitters demonstrated better performance than industry standard single emitters and the performance required to achieve 200 micronewtons when scaled up to a thruster with 400 emitters in 1 cm2. Arrays of emitters tested in a preliminary prototype Microfluidic Electrospray Propulsion (MEP) thruster assembly demonstrated stable performance at estimated thrust levels of 5, 50, and 120 µN at extraction voltages less than 4 kV. Current stability was within 0.15 % at 120 µN with only 1.5% of the emitter current collected by the extractor electrode. Post-test inspections revealed that more than 99% of the 400 emitters were electrospraying during the test. Specific impulse was estimated to be >3100 s from measurements of total charge and consumed indium mass at an emitter voltage of 1470 V. The results of this investigation suggest that microfabricated indium electrospray thruster technology is both feasible and capable of excellent performance as a highly compact microthruster.

Marrese-Reading, Colleen M.↗
DOE OSTI2022

Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article: PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer; methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask; methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.

14 SOLAR ENERGY↗