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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effect of the Electric Field Strength on the Energy Resolution of Cr/CdTe/Pt Detectors

The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal-semiconductor type rectifying contact, used in X/γ-ray detectors, are investigated. For the detectors fabrication, chlorine-doped CdTe crystals with a resistivity of (3-6) × 10 9 Ω cm at 293 K were used. 137Cs spectra and their modification by applied voltage change were obtained. The reverse bias voltage corresponding to the best energy resolution of the Cr/CdTe/Pt structure is experimentally determined. The concentration of impurities N in the crystal, which determines the thickness of the space-charge region, is estimated. Finally, an energy resolution deterioration of the Cr/CdTe/Pt structure with increasing voltage is explained due to the Gunn effect.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Chromium Poisoning Mitigation Strategy in Strontium-Doped Lanthanum Manganite-Based Air Electrodes in Solid Oxide Fuel Cells

Abstract Chromium poisoning of the air electrode remains an obstacle to the long-term performance of solid oxide fuel cells (SOFCs). In Sr-doped LaMnO3 (LSM) air electrodes, the poisoning process results in two types of deposits, chromium oxide (Cr2O3), and Mn, Cr spinel (MnCr2O4). The former forms electrochemically and the latter forms via a chemical reaction. By applying a small anodic reverse bias, Cr2O3 deposits can be removed because their formation is electrochemical in nature. However, MnCr2O4 deposits remain because their formation is chemical, rather than electrochemical, in nature. In situ chemical decomposition of the Mn, Cr spinel was investigated as an alternate removal method as thermodynamics supports its decomposition into constituent oxides below ∼540 °C in pure oxygen. The spinel decomposition process was characterized using thermogravimetric and X-ray diffraction analyses. The experimentally determined rate of spinel decomposition was undetectable (very slow) with isolated MnCr2O4 powders. The addition of 10 mol% gadolinia doped ceria (GDC) and silver powders significantly increased the rate of decomposition. However, the rate is limited by the diffusion of oxygen through the decomposed oxide layer. Although one strategy may be the addition of GDC and silver to the LSM air electrode to enhance spinel decomposition, the more effective mitigation strategy would be to prevent the formation of MnCr2O4 spinel in the first place through the removal of the reactants: Cr2O3 via electrochemical cleaning and mobile Mn ions in the zirconia electrolyte by incorporating a diffusion barrier layer such as GDC between the air electrode and electrolyte.

Electrochemistry↗
DOE OSTI2020

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Peri, Prudhvi (ORCID:000000022338441X)↗
DOE OSTI2021

In-situ proton radiation testing of 2.4 micron wavelength extended InGaAs photodiodes at dry ice and room temperatures

We have successfully tested 290 µm diameter, 2.4 micron wavelength, Extended InGaAs photodiodes coupled with single mode fiber using 50 MeV Protons at both dry ice temperature (-72 °C) and room temperature (20 °C). The devices were reverse biased at 100 mV during the radiation run and their leakage current was continuously monitored insitu during the exposure. These devices find multiple applications in space for spectroscopy & sensing, inter-satellite optical communication links, rapid Doppler shift LIDAR, as well as inter-planetary and Earth-to-Moon communication links. Several photodiodes were tested using 50 MeV Protons with an average flux level of 2.11 × 10 7 protons/cm 2 /s, for a total fluence of 1.0 × 10 11 protons/cm 2 and total dose of 20 krad (water). Pre- and post-radiation results were also measured for leakage current vs. voltage, responsivity (quantum efficiency), and bandwidth of the Extended InGaAs photodiodes. Finally, all devices were found to be fully functional at normal operating conditions and at both dry ice and room temperature.

2.4 micron wavelength↗
DOE OSTI2022

Fast External Quantum Efficiency Measurements of Photovoltaic Modules

The external quantum efficiency (EQE) or associated spectral response is widely used to evaluate the performance of photovoltaics, light emitting diodes, photodetectors, photodiodes, semiconductor lasers, laser-induced refrigeration of solids etc. For photovoltaic (PV) devices, The EQE is used to determine the spectral mismatch correction that is used to convert a performance measurement from a non-ideal simulator spectrum to a standard spectrum in PV device calibrations. Moreover, EQE can provide important insight into the physics of a PV device. For instance, the EQE shape can be used to infer mechanisms limiting the performance of the device. However, EQE measurements of full-size PV modules remain a challenge in the PV community due to rare availability of reliable module QE measurement tools worldwide and the size and complexity of module architecture that comprises several cells connected in strings (series or/and parallel). Here, we use a customized nondestructive tool made of high-power light emitting diodes to perform high-throughput EQE measurements on PV modules. Circuit simulations show that the measurement system can safely be used to measure both crystalline silicon and thin film-based PV modules with series connected cells without the risk of damage through reverse bias. In addition, EQE mapping combined with electroluminescence show a strong correlation and provide a way to determine both spatial non-uniformity of the spectral response and defects/degradation effects across the module.

PV module↗
DOE OSTI2022

Radiation testing of 2.4 micron wavelength extended InGaAs photodiodes for 100 MeV/n carbon ions

We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250, and 290 Micron, coupled with a Single Mode Fiber using 100 MeV/n Carbon (C) Ions up to a cumulative dose of ~40 krad. During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100 MeV/n Carbon Ions with a fluence of 10 6 , 10 7 , 10 8 , 10 9 , and 10 10 ions/cm 2 at each fluence level. At 100 MeV/n the Linear Energy Transfer (LET) of Carbon Ion is ~0.156 MeV-cm 2 /mg in Extended InGaAs, which is an order magnitude more than Proton (H) and Helium (He) Ions of 100 MeV/n energy. Thus, significant displacement damage is anticipated in the Extended InGaAs Photodiode with 100 MeV/n Carbon Ions with a total fluence of 1 × 1010 ions/cm 2 . Pre- and Post- radiation results were also measured for: (1) Leakage Current Vs. Voltage for the Extended InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. The leakage current increased up to a factor of ~2X at lower bias of 100 mV at the highest fluence of 10 10 ions/cm 2 , but not significantly at higher bias of 2 V. Finally, we did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.

2.4 micron wavelength↗
DOE OSTI2020

A sensitive and robust thin-film x-ray detector using 2D layered perovskite diodes

Solid-state radiation detectors, using crystalline semiconductors to convert radiation photons to electrical charges, outperform other technologies with high detectivity and sensitivity. Here, we demonstrate a thin-film x-ray detector comprised with highly crystalline two-dimensional Ruddlesden-Popper phase layered perovskites fabricated in a fully depleted p-i-n architecture. It shows high diode resistivity of 10 12 ohm·cm in reverse-bias regime leading to a high x-ray detecting sensitivity up to 0.276 C Gy air –1 cm –3 . Such high signal is collected by the built-in potential underpinning operation of primary photocurrent device with robust operation. The detectors generate substantial x-ray photon–induced open-circuit voltages that offer an alternative detecting mechanism. Furthermore, our findings suggest a new generation of x-ray detectors based on low-cost layered perovskite thin films for future x-ray imaging technologies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

PACT Perovskite PV Module Stress Testing Protocol (Version 0.0)

The purpose of this protocol is to use accelerated stress testing to assess the durability of metal halide perovskite (MHP) photovoltaic (PV) modules. The protocol aims to apply field relevant stressors to packaged MHP modules to screen for early failures that may be observed in the field. The current protocol has been designed with a glass/glass-PIB edge seal, no encapsulant package in mind. PACT anticipates adding additional testing sequences to evaluate additional stressors (e.g., PID, reverse bias) in the future.

42 ENGINEERING↗
DOE OSTI2020

Defect Kinetics and Control for Module Reliability

Potential induced degradation is currently one of the most important module degradation mechanisms. It has been suggested that stacking faults decorated with sodium from the module glass are responsible for this effect and authors have also shown the reversibility of this effect upon reverse biasing of the module. The importance of sodium in the failure mechanism is clear, however, little is known regarding the factors that control its diffusion into the wafer, making it nearly impossible to predict the performance of a given module and engineer it to be better. Sodium migration from module glass into silicon cells and the resulting module degradation is a clear example of how defect kinetics can determine overall module performance and long-term reliability. To the detriment of the industry and its bankability, no quantitative models yet exist to predict defect-assisted module degradation, limiting the progress in improving reliability. In particular, the understanding of defect behavior under high electric fields, under stresses imparted by encapsulation or temperature, and under real operating conditions over long periods of time is a crucial gap in the current state-of-the-art. In this work we developed a Defect-Device-Degradation model to predict defect behavior and its impact on device performance over the module operational lifetime using experimentally-determined defect parameterizations. The validated model will provide a platform for manufacturing process optimization across input materials and architectures to avoid deleterious defects upstream and enable enhanced module robustness.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
DOE OSTI2025

Bridging the length scales in ionic separations via data-driving machine learning

We pursued a data science driven machine learning (ML) approach that blended molecular scale attributes informed from molecular dynamics (MD) simulation and materials properties to the selectivity and energy efficiency in targeted ionic separations using electric fields. The model mixtures investigated for ionic separations are pH sensitive and include organic acids, silica and boron, transition metals, such as copper and chromium. There were two major research thrusts of this project. Firstly, we investigated surrogate models and deep learning that relate material chemistries and structures to selective transport of ionic species under applied electric fields. Secondly we investigated how the bipolar junction interfacial design and water dissociation catalyst in bipolar membranes affect reverse bias polarization behavior and pH modulation in deionization platforms as a function of the platform operating parameters (e.g., cell voltage, residence time, and salt feed concentration). As a result of this work, we also were able to start a new direction, namely ML models for molecular design of surfactants.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗