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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗
NASA NTRS1978

Direct measurements of the atmospheric conduction current

A method of measuring the atmospheric conduction current above the ground has been employed to obtain data for 12 weeks during the first half of 1974. The instrument consists of a split aluminum sphere suspended by insulated wires to a wooden frame. The measuring electronics and the transmitter are enclosed within the spherical structure. The interaction of the instrument with its atmospheric electrical environment is analyzed, and it is shown that in steady state conditions, predictable differences in the instrumentally measured currents and the atmospheric conduction current will be less than 5% and in the nonsteady state situations the difference is less than 20%. Diurnal variations, a probable winter-summer variation, sunrise, and fog effects were observed for the data obtained during fair-weather conditions. Disturbed weather data are interpreted for the effects of low clouds on the atmospheric current. The charge concentrations within overcast clouds sufficient to produce the observed reversed atmospheric currents are estimated to be small in relation to values in thunderclouds.

Burke, H. K.↗
NASA NTRS1984

Barrier height determination on Schottky contacts formed at the back contact-semiconductor interface of degraded solar cells

A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.

Misiakos, K.↗
DOE OSTI2025

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
DOE OSTI2024

Nonreciprocal Coulomb drag between quantum wires in the quasi-one-dimensional regime

Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. We report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple one-dimensional (1D) sub-band regime that break Onsager's reciprocity upon both layer and current direction reversal, in contrast to prior 1D Coulomb drag results. The drag signal shows nonlinear current-voltage (I-V) characteristics, which are well characterized by a third-order polynomial fit. These findings are qualitatively consistent with a rectified drag signal induced by charge fluctuations. However, the nonmonotonic temperature dependence of this drag signal suggests that strong electron-electron interactions, expected within the Tomonaga-Luttinger liquid framework, remain important and standard interaction models are insufficient to capture the qualitative nature of rectified 1D Coulomb drag.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1972

Breakdown phenomena in reverse biased silicon solar cells.

Solar cell reverse current-voltage characteristics have been found to vary widely and to be generally unstable. At reverse voltages greater than approximately 20 V and at cell power dissipations of more than 4 W, the probability of permanent breakdown, resulting in cell short-circuit failure, was found to increase with increasing voltage and exposure time. Shorted cells showed evidence of cell contact material and silicon melting in very localized areas with lava-like flow patterns and channels bridging the p and n contacts.

Rauschenbach, H. S.↗
DOE OSTI2022

Effects of polarization-reversed EMIC waves on the ring current dynamics

Electromagnetic ion cyclotron (EMIC) waves are widely believed to play an important role in influencing the radiation belt and ring current dynamics. Most studies have investigated the effects or characteristics of EMIC waves by assuming their left-handed polarization. However, recent studies have found that the reversal of polarization, which occurs at higher latitudes along the wave propagation path, can change the wave-induced pitch angle diffusion coefficients. Whether such a polarization reversal can influence the global ring current dynamics remains unknown. In this study, we investigate the ring current dynamics and proton precipitation loss in association with polarization-reversed EMIC waves by using the ring current–atmosphere interactions model (RAM). The results indicate that the polarization reversal of H-band EMIC waves can truly decrease the scattering rates of protons of 10 to 50 keV or >100 keV in comparison with the scenario in which the EMIC waves are considered purely left-handed polarized. Additionally, the global ring current intensity and proton precipitation may be slightly affected by the polarization reversal, especially during prestorm time and the recovery phase, but the effects are not large during the main phase. This is probably because the H-band EMIC waves contribute to the proton scattering loss primarily at E < 10 keV, an energy range that is not strongly affected by the polarization reversal.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗
DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗
NASA NTRS1995

Gallium phosphide energy converters

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Sims, P. E.↗
NASA NTRS1996

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗
NASA NTRS1973

Principal sources and dispersal patterns of suspended particulate matter in nearshore surface waters of the northeast Pacific Ocean

The author has identified the following significant results. Release-recovery paths of drift cards released in conjunction with ERTS-1 overflight show that nearshore surface currents along the central and northern California coast flowed southward at an average rate in excess of 10 cm/sec (8.5 km/day) during August and September 1973 (California Current). By the middle of October 1973, the nearshore surface currents had reversed and the dominant flow velocity was northward at an average rate in excess of 20 cm/sec (17 km/ day) (Davidson Current). The August-September data suggested the presence of counterclockwise gyres in Monterey Bay and the Gulf of the Farallones, but by the middle of October, the gyres were no longer evident. Imagery of April 1973 showed well developed plumes of suspended sediment in Monterey Bay from the Salinas River and in the Gulf of the Farallones from San Francisco Bay. ERTS-1 imagery provides an effective means of monitoring timber harvest in the redwood forest along the northern California coast. ERTS-1 imagery also clearly portrays contrasting topographic belts characterized by fluvial erosion and by mass movement. The most visually apparent and most persistent river mouth suspended sediment plumes are associated with those rivers that drain belts of topography that appear to have been eroded primarily by mass movement.

Carlson, P. R.↗
NASA NTRS1985

The neutral wind 'flywheel' as a source of quiet-time, polar-cap currents

The neutral wind pattern over the summer polar cap can be driven by plasma convection to resemble the convection pattern. For a north-south component of the interplanetary magnetic field Bz directed southward, the wind speeds in the conducting E-region can become approximately 25 percent of the electric field drift speeds. If convection ceases, this neutral wind distribution can drive a significant polar cap current system for approximately 6 hours. The currents are reversed from those driven by the electric fields for southward Bz, and the Hall and field-aligned components of the current system resemble those observed during periods of northward Bz. The current magnitudes are similar to those observed during periods of small, northward Bz; however, observations indicate that electric fields often contribute to the currents as much as, or more than, the neutral winds.

Lyons, L. R.↗
NASA NTRS1996

Gallium phosphide energy converters

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

Sims, P. E.↗
NASA NTRS2017

Reliability Issues with PME and BME Ceramic Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

degradation↗