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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Toward ultrafast soft x-ray spectroscopy of organic photovoltaic devices

Novel ultrafast x-ray sources based on high harmonic generation and at x-ray free electron lasers are opening up new opportunities to resolve complex ultrafast processes in condensed phase systems with exceptional temporal resolution and atomic site specificity. In this perspective, we present techniques for resolving charge localization, transfer, and separation processes in organic semiconductors and organic photovoltaic devices with time-resolved soft x-ray spectroscopy. We review recent results in ultrafast soft x-ray spectroscopy of these systems and discuss routes to overcome the technical challenges in performing time-resolved x-ray experiments on photosensitive materials with poor thermal conductivity and low pump intensity thresholds for nonlinear effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Probing the Nanoscale Excitonic Landscape and Confinement of Excitons in Gated Monolayer Semiconductors

Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. Here, in this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer WS 2 under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in 2D materials.

2D materials↗
DOE OSTI2021

Calibration of a versatile multi-energy soft x-ray diagnostic for WEST long pulse plasmas

A compact multi-energy soft x-ray diagnostic is being installed on the W Environment in Steady-state Tokamak (WEST), which was designed and built to test ITER-like tungsten plasma facing components in a long pulse (~1000 s) scenario. The diagnostic consists of a pinhole camera fielded with the PILATUS3 photon-counting Si-based detector (≲100 kpixel). The detector has sensitivity in the range 1.6–30 keV and enables energy discrimination, providing a higher energy resolution than conventional systems with metal foils and diodes with adequate space and time resolution (≲1 cm and 2 ms). The lower-absorption cut-off energy is set independently on each one of the ~100 kpixels, providing a unique opportunity to measure simultaneously the plasma emissivity in multiple energy ranges and deduce a variety of plasma parameters (e.g., T e , n Z , and ΔZ eff ). The energy dependence of each pixel is calibrated here over the range 3–22 keV. The detector is exposed to a variety of monochromatic sources—fluorescence emission from metallic targets—and for each pixel, the lower energy threshold is scanned to calibrate the energy dependence. The data are fit to a responsivity curve (“S-curve”) that determines the mapping between the possible detector settings and the energy response for each pixel. Here, the calibration is performed for three energy ranges: low (2.3–6 keV), medium (4.5–13.5 keV), and high (5.4–21 keV). We determine the achievable energy resolutions for the low, medium, and high energy ranges as 330 eV, 640 eV, and 950 eV, respectively. The main limitation for the energy resolution is found to be the finite width of the S-curve.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Resonant and bound states of charged defects in two-dimensional semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS 2 using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magneto-optical response of the magnetic semiconductors EUCd 2 X 2 (X = P, As, SB)

n this study, we identify EuCd 2 X 2 (for X = P, As, Sb) as a series of magnetic semiconductors. We examine how the band gap of the series responds to X changing from phosphorus (P), to arsenic (As), and finally antimony (Sb). We characterize the samples using electronic transport and magnetization measurements. Based on infrared spectroscopy, we find that the band gap reduces progressively from 1.23 eV in EuCd 2 P 2 , to 0.77 eV in EuCd 2 As 2 , and finally 0.52 eV in EuCd 2 Sb 2 . In a magnetic field, all three systems show a strong response and their band gaps decrease at 4 K. This decrease is non-monotonic as we change X. It is strongest in the phosphorous compound and weakest in the antimony compound. For all the three compositions, EuCd 2 X 2 remains a semiconductor up to the highest magnetic field applied (16 T).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Amplitude-mode spectroscopy of chemically injected and photogenerated charge carriers in semiconducting single-walled carbon nanotubes

In one-dimensional semiconductors such as conjugated polymers and semiconducting single-walled carbon nanotubes (s-SWCNTs), injected charge carriers (electrons or holes) can have profound impacts on both electronic conductivity and optical spectra, even at low carrier densities. Understanding charge-related spectral features is a key fundamental challenge with important technological implications. Here, we employ a systematic suite of experimental and theoretical tools to understand the mid-infrared charge signatures of heavily p-type doped polymer-wrapped s-SWCNTs. Across a broad range of nanotube diameters, we find that hole charge carriers induce strong Fano anti-resonances in mid-infrared transmission spectra that correspond to defect-related (D-band) and in-plane tangential (G-band) Raman-active vibrational modes, along with anti-resonances arising from infrared (IR)-active polymer and SWCNT modes. We employ 13C isotope-labeled s-SWCNTs and a removable wrapping polymer to clarify the relative intensities, energies, and sources of all observed anti-resonances. Simulations performed with the "amplitude mode model" are used to quantitatively reproduce Raman spectra and also help to explain the outsized intensity of the D-band anti-resonance, relative to the G-band, observed for both moderately and degenerately doped s-SWCNTs. Here, the results provide a framework for future studies of ground- and excited-state charge carriers in s-SWCNTs and a variety of low-dimensional materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Comparing the structures and photophysical properties of two charge transfer co-crystals

Organic co-crystals have emerged as a promising class of semiconductors for next-generation optoelectronic devices due to their unique photophysical properties. This paper presents a joint experimental-theoretical study comparing the crystal structure, spectroscopy, and electronic structure of two charge transfer co-crystals. Reported herein is a novel co-crystal Npe:TCNQ, formed from 4-(1-naphthylvinyl)pyridine (Npe) and 7,7,8,8-tetracyanoquinodimethane (TCNQ) via molecular self-assembly. This work also presents a revised study of the co-crystal composed of Npe and 1,2,4,5-tetracyanobenzene (TCNB) molecules, Npe:TCNB, herein reported with a higher-symmetry (monoclinic) crystal structure than previously published. Npe:TCNB and Npe:TCNQ dimer clusters are used as theoretical model systems for the co-crystals; the geometries of the dimers are compared to geometries of the extended solids, which are computed with periodic boundary conditions density functional theory. UV-Vis absorption spectra of the dimers are computed with time-dependent density functional theory and compared to experimental UV-Vis diffuse reflectance spectra. Both Npe:TCNB and Npe:TCNQ are found to exhibit neutral character in the S 0 state and ionic character in the S 1 state. In conclusion, the high degree of charge transfer in the S 1 state of both Npe:TCNB and Npe:TCNQ is rationalized by analyzing the changes in orbital localization associated with the S 1 transitions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Classification of Semiconductors Using Photoluminescence Spectroscopy and Machine Learning

Photoluminescence spectroscopy is a nondestructive optical method that is widely used to characterize semiconductors. In the photoluminescence process, a substance absorbs photons and emits light with longer wavelengths via electronic transitions. This paper discusses a method for identifying substances from their photoluminescence spectra using machine learning, a technique that is efficient in making classifications. Neural networks were constructed by taking simulated photoluminescence spectra as the input and the identity of the substance as the output. Here, six different semiconductors were chosen as categories: gallium oxide (Ga 2 O 3 ), zinc oxide (ZnO), gallium nitride (GaN), cadmium sulfide (CdS), tungsten disulfide (WS 2 ), and cesium lead bromide (CsPbBr 3 ). The developed algorithm has a high accuracy (>90%) for assigning a substance to one of these six categories from its photoluminescence spectrum and correctly identified a mixed Ga 2 O 3 /ZnO sample.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe 2 with Femtosecond Core-Level Spectroscopy

In this study, we employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe 2 semiconductor. By interrogating the valence electronic structure via localized Te 4 d (39-46 eV) and Mo 4 p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A 1g (5.1 THz) and in-plane E 1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A 1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe 2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Tracking Optical Phonon Dynamics in InP Nanocrystals via Transient Absorption and Femtosecond Stimulated Raman Spectroscopy

Semiconductor nanocrystals (NCs) offer actualized and prospective utility in optoelectronic technologies, yet key aspects of their thermal and vibrational behaviors remain unresolved. Compared with bulk crystals, heat dissipation involving NCs can differ substantially owing to pervasiveness of interfacial scattering, phonon confinement, and relaxed phonon momentum selection rules, as well as influences of ligands. Here, in addition to transient absorption, we use femtosecond stimulated Raman spectroscopy to track nonequilibrium optical-phonon dynamics in InP NCs capped with myristic acid ligands and compare the same particles coated with a ZnS shell. We identify distinct phonon decay pathways in ligand-capped versus ZnS-shelled NCs. Increasing the excitation density and introducing the ZnS shell measurably modify optical-phonon lifetimes, whereas phonon formation times remain largely unchanged. In addition, we observe phonon mode softening in ligand-capped nanocrystals, consistent with lattice expansion. Together, these results demonstrate that core–shell structures can strongly govern nanocrystal thermal dissipation pathways and should be considered a key design parameter for optoelectronic operation.

dissipation↗
DOE OSTI2025

Atoms-to-devices models for post-irradiation annealing kinetics in III-V semiconductors

Understanding atomic displacement damage and propagating this understanding into validated defect-aware radiation damage models is a critical step toward achieving predictive, atoms-to-systems assessment of radiation vulnerabilities of microelectronics. These models are essential for evaluating the performance and reliability of nuclear stockpile components or space-based electronics (satellites). The goal of this project was to bridge a fundamental science gap between defect spectroscopies and atomistic modeling of radiation-induced defects on the one hand, and simulations of device response on the other hand, to develop predictive defect-aware damage models for high-fidelity device simulations of radiation-damaged III-V semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical properties of semiconductor nanoparticles doped with 3d and 4f block elements

Doped inorganic nanoparticles (NPs) have enabled researchers across multiple disciplines to create new materials with unique optical, electronic, magnetic, electrical, chemical, and/or compositional properties. In the quest for generating newer functional materials with controlled optical and electronic properties, the use of d- and f-block elements as dopants in the inorganic NPs remain at the forefront of research. This article summarizes experiments that identify the important control parameters, in the form of NP core and surface properties, for promoting host-sensitized dopant emission from d- and f-doped inorganic/semiconductor NPs. We conclude that energy offsets between the dopant and NP electronic levels and an understanding of the charge trapping mechanisms can be used to predict dopant luminescence, and we claim that these features can be used to choose NP host materials by design, rather than by trial and error.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Quantifying interfacial energetics of 2D semiconductor electrodes using in situ spectroelectrochemistry and many-body theory

Hot carrier extraction occurs in 2D semiconductor photoelectrochemical cells. Boosting the energy efficiency of hot carrier-based photoelectrochemical cells requires maximizing the hot carrier extraction rate relative to the cooling rate. One could expect to tune the hot carrier extraction rate constant (k ET ) via a Marcus–Gerischer relationship, where k ET depends exponentially on ΔG°' (the standard driving force for interfacial electron transfer). ΔG°' is defined as the energy level difference between a semiconductor's conduction/valence band (CB/VB) minima/maxima and the redox potential of reactant molecules in solution. A major challenge in the electrochemistry community is that conventional approaches to quantify ΔG°' for bulk semiconductors (e.g., Mott–Schottky measurements) cannot be directly applied to ultrathin 2D electrodes. The specific problem is that enormous electronic bandgap changes (>0.5 eV) and CB/VB edge movement take place upon illuminating or applying a potential to a 2D semiconductor electrode. Here, we develop an in situ absorbance spectroscopy approach to quantify interfacial energetics of 2D semiconductor/electrolyte interfaces using a minimal many-body model. Our results show that band edge movement in monolayer MoS 2 is significant (0.2–0.5 eV) over a narrow range of applied potentials (0.2–0.3 V). Such large band edge shifts could change k ET by a factor of 10–100, which has important consequences for practical solar energy conversion applications. We discuss the current experimental and theoretical knowledge gaps that must be addressed to minimize the error in the proposed optical approach.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescence

The introduction of selenium in CdSeTe/CdTe solar cells has led to improved device performances attributed to the passivation of bulk defects. In this work, high-resolution cathodoluminescence experiments are performed on a series of CdSeTe/CdTe thin films with different Se concentrations to quantify the mechanisms and the passivation role of Se. We demonstrate a universal dependence between the Se concentration and the radiative efficiency and a ten-fold enhancement of the luminescence between CdTe and CdSe 0.4 Te 0.6 . Raw luminescence maps are converted into maps of the Se concentration, revealing its graded profile within the stack. We demonstrate the diffusion of Se along CdTe grain boundaries induced by the cadmium chloride annealing treatment and determine the diffusion coefficients, which are more than eight times higher at grain boundaries than in grain interiors. These results provide microscopic insights into the distribution of Se and its impact on the passivation of CdSeTe/CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe–SnS flakes. Furthermore, the combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.

2D ferroelectrics↗
DOE OSTI2021

In situ study of the electronic structure of polar-to-polar SrTiO 3 /($000\bar1$)ZnO heterointerface

The SrTiO 3 (STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic devices, is a classical system combining functional perovskite oxides and wurtzite-structure semiconductor materials. The electronic structure of the heterointerface often plays a significant role in controlling the functions of novel devices. In this study, the electronic structure was explored using in situ photoemission spectroscopy and X-ray absorption spectroscopy. X-ray diffraction results showed the coexistence of (111) STO and (011) STO orientations for the STO film deposited on the ZnO-($000\bar1$) substrate via pulsed laser deposition. High-resolution transmission electron microscopic results revealed two types of polar interfaces: [$11\bar2$][$10\bar1$](111) STO //[$1\bar210$][$10\bar10$]($000\bar1$) ZnO and [111][$2\bar1\bar1$](011) STO //[$10\bar21$][$10\bar10$]($000\bar1$)ZnO. In situ photoemission spectroscopic results revealed downward band bending and the transformation of the valence states of Ti from 4+ to 3+, with extra electrons transferring to the hybridization states between O 2p and Ti t 2g orbitals at the polar-to-polar STO/ZnO interface. We propose that the polar discontinuity drives the electron transfer to the STO/ZnO interface during the growth process. This study provides insight into the electronic structure of the STO/($000\bar1$)ZnO heterointerface.

77 NANOSCIENCE AND NANOTECHNOLOGY↗